Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50227) > Сторінка 821 з 838
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SS115H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS115LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS115HM2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA Max. forward impulse current: 40A Max. forward voltage: 0.95V Leakage current: 0.1mA Case: SMA Type of diode: Schottky rectifying |
на замовлення 217500 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 809 шт: термін постачання 14-30 дні (днів) |
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MUR160S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUR160SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Mounting: SMD Max. forward voltage: 1.25V Features of semiconductor devices: ultrafast switching Application: automotive industry Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying Reverse recovery time: 50ns |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| SF38G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 125A Case: DO201AD Reverse recovery time: 35ns |
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В кошику од. на суму грн. | |||||||||||||||
| SF38G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying Reverse recovery time: 300ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TS431ACX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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TSM260P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Kind of channel: enhancement Case: SOT23 Type of transistor: P-MOSFET Kind of package: tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Gate charge: 19.5nC On-state resistance: 26mΩ Power dissipation: 1.56W Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TSG65N190CR RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN56 Gate-source voltage: -10...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||
| TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 60A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 35A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 4nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. forward voltage: 0.97V |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| GBPC2508W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBPC2508 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KBU605G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: KBU Kind of package: in-tray Max. forward voltage: 1.1V Version: flat Leads: round pin Electrical mounting: THT Type of bridge rectifier: single-phase |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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| KBU603G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 6A Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBU604G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBU606G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBU607G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TS34119CS RLG | TAIWAN SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 2...16V DC Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSD10L200CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A Type of diode: Schottky rectifying Max. off-state voltage: 200V Case: D2PAK Mounting: SMD Max. forward impulse current: 100A Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.98V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6A60G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V Case: R6 Mounting: THT Kind of package: reel; tape Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Capacitance: 60pF Type of diode: rectifying Max. forward impulse current: 250A Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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| SS14M RSG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 25A |
на замовлення 18000 шт: термін постачання 14-30 дні (днів) |
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SMCJ33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| UG6005PT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO247AD Max. load current: 60A Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| UG6005PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO3P Max. load current: 60A Reverse recovery time: 25ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS515FSH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape Type of diode: Schottky rectifying Case: SOD128F Mounting: SMD Max. off-state voltage: 150V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 110A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 28000 шт В кошику од. на суму грн. | |||||||||||||||
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BZT52B3V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 4240 шт: термін постачання 14-30 дні (днів) |
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BZT52C3V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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BZX55C30 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 30V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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BAV19W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 625mA Kind of package: reel; tape |
на замовлення 1001 шт: термін постачання 14-30 дні (днів) |
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TSM340N06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 40W Case: DPAK; TO252 On-state resistance: 28mΩ Mounting: SMD Gate charge: 16.6nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ5V0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMBJ |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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SK36A R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 7330 шт: термін постачання 14-30 дні (днів) |
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SK36A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SK36B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 360 шт: термін постачання 14-30 дні (днів) |
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SK36AH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR1545CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.84V Kind of package: tube Max. forward impulse current: 150A |
на замовлення 423 шт: термін постачання 14-30 дні (днів) |
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MBR1545CTH | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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| TSM60NE084CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 83W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 84mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB200CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 351 шт: термін постачання 14-30 дні (днів) |
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BYG20G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
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BYG20GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS9011SCY RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 3.3V Output current: 0.2A Case: SOT89 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...125°C Number of channels: 1 Input voltage: 12V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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TS9011KCX RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 2.5V Output current: 0.16A Case: SOT23 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Number of channels: 1 Input voltage: 12V Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS9011KCY RMG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 2.5V Output current: 0.16A Case: SOT89 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS9011PCY RMG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.16A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3V Output current: 0.16A Case: SOT89 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TS6P02G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 150A Case: TS-6P Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 0.1kV Electrical mounting: THT Load current: 6A Type of bridge rectifier: single-phase |
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В кошику од. на суму грн. | |||||||||||||||
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BZX85C9V1 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 9.1V; DO41; single diode; tape Type of diode: Zener Power dissipation: 1.3W Zener voltage: 9.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 754 шт: термін постачання 14-30 дні (днів) |
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BZT52C9V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 459 шт: термін постачання 14-30 дні (днів) |
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TSZU52C9V1 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 9.1V; SMD; 0603; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Case - inch: 0603 Case - mm: 1608 |
на замовлення 3110 шт: термін постачання 14-30 дні (днів) |
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MUR840H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Reverse recovery time: 50ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TS331CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA Kind of comparator: low-power Mounting: SMT Delay time: 1.3µs Input offset voltage: 5mV Type of integrated circuit: comparator Operating temperature: -40...105°C Number of comparators: 1 Voltage supply range: ± 1...18V DC; 2...36V DC Kind of package: reel; tape Input offset current: 50nA Case: SOT25 |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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TS79M05CP ROG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; TS79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: -7.5...-20V Manufacturer series: TS79M00 |
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В кошику од. на суму грн. |
| SS115H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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| SS115LWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
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| SS115HM2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
на замовлення 217500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22500+ | 1.78 грн |
| BZT52C5V1 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 809 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 71+ | 5.95 грн |
| 120+ | 3.50 грн |
| 500+ | 2.61 грн |
| MUR160S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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| MUR160SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Mounting: SMD
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Mounting: SMD
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 50ns
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 23+ | 18.37 грн |
| 100+ | 11.66 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.88 грн |
| 3000+ | 7.04 грн |
| SF38G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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| SF38G-A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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| S1KLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
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| RS1KLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
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| TS431ACX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 30+ | 14.26 грн |
| 35+ | 12.33 грн |
| 100+ | 10.48 грн |
| TSM260P02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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| TSG65N190CR RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSG65N068CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSG65N195CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSG65N110CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| MBR20H200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.58 грн |
| GBPC2508W |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2508 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| KBU605G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: KBU
Kind of package: in-tray
Max. forward voltage: 1.1V
Version: flat
Leads: round pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: KBU
Kind of package: in-tray
Max. forward voltage: 1.1V
Version: flat
Leads: round pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 139.09 грн |
| 10+ | 62.90 грн |
| KBU603G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU604G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU606G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| KBU607G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| TS34119CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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| TSD10L200CW MNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Case: D2PAK
Mounting: SMD
Max. forward impulse current: 100A
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Case: D2PAK
Mounting: SMD
Max. forward impulse current: 100A
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
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| 6A60G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.71 грн |
| 17+ | 25.41 грн |
| 18+ | 23.57 грн |
| 25+ | 22.48 грн |
| 100+ | 20.88 грн |
| SS14M RSG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
на замовлення 18000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9497+ | 3.81 грн |
| SMCJ33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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| UG6005PT |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
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| UG6005PTH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
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| SS515FSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 110A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 110A
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 28000 шт
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| BZT52B3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 4240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.69 грн |
| 100+ | 4.63 грн |
| 250+ | 4.09 грн |
| 1000+ | 3.87 грн |
| BZT52C3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.34 грн |
| 120+ | 3.35 грн |
| BZX55C30 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| BAV19W RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
на замовлення 1001 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.43 грн |
| 135+ | 3.17 грн |
| 250+ | 2.52 грн |
| 1000+ | 2.32 грн |
| TSM340N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| SMBJ5V0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
на замовлення 690 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 20+ | 22.06 грн |
| 25+ | 18.70 грн |
| 50+ | 16.10 грн |
| 100+ | 13.84 грн |
| 500+ | 9.56 грн |
| SK36A R2 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 7330 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 19+ | 22.56 грн |
| 50+ | 15.01 грн |
| 100+ | 12.58 грн |
| 500+ | 8.55 грн |
| 1000+ | 7.38 грн |
| 2000+ | 6.63 грн |
| SK36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
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| SK36B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 360 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 22+ | 19.46 грн |
| 25+ | 16.77 грн |
| 50+ | 12.33 грн |
| 100+ | 10.99 грн |
| SK36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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| MBR1545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
на замовлення 423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 13+ | 32.79 грн |
| 50+ | 30.86 грн |
| 100+ | 29.69 грн |
| MBR1545CTH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.61 грн |
| 10+ | 50.32 грн |
| 50+ | 46.13 грн |
| 100+ | 44.45 грн |
| TSM60NE084CIT C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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| P6SMB200CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 351 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 25+ | 18.95 грн |
| 100+ | 16.69 грн |
| BYG20G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
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| BYG20GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
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| TS9011SCY RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
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Мінімальне замовлення: 3 шт
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| TS9011KCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12V
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12V
Tolerance: ±2%
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| TS9011KCY RMG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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| TS9011PCY RMG |
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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| TS6P02G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 150A
Case: TS-6P
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 150A
Case: TS-6P
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 6A
Type of bridge rectifier: single-phase
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| BZX85C9V1 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 9.1V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 9.1V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 754 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.55 грн |
| 44+ | 9.56 грн |
| 53+ | 7.97 грн |
| 100+ | 5.03 грн |
| 500+ | 4.44 грн |
| BZT52C9V1 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 459 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 73+ | 5.79 грн |
| 117+ | 3.61 грн |
| 250+ | 3.01 грн |
| TSZU52C9V1 RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 0603
Case - mm: 1608
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 0603
Case - mm: 1608
на замовлення 3110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.84 грн |
| 50+ | 9.06 грн |
| 100+ | 7.97 грн |
| 500+ | 7.30 грн |
| MUR840H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 50ns
Application: automotive industry
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| TS331CX5 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA
Kind of comparator: low-power
Mounting: SMT
Delay time: 1.3µs
Input offset voltage: 5mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Input offset current: 50nA
Case: SOT25
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA
Kind of comparator: low-power
Mounting: SMT
Delay time: 1.3µs
Input offset voltage: 5mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Input offset current: 50nA
Case: SOT25
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 25+ | 16.86 грн |
| 27+ | 15.60 грн |
| 100+ | 14.84 грн |
| TS79M05CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; TS79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-20V
Manufacturer series: TS79M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; TS79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-20V
Manufacturer series: TS79M00
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