Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMAJ15A-E3/61 | VISHAY |
![]() Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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VS-ETH3006FP-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 27ns |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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IRFP240PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
на замовлення 355 шт: термін постачання 21-30 дні (днів) |
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T63XB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Characteristics: linear Torque: 1Ncm Manufacturer series: T63XB Track material: cermet Kind of potentiometer: multiturn Potentiometer standard - inch: 1/4" Mounting: THT Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Max. operating voltage: 250V |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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T63YB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Characteristics: linear Torque: 1Ncm Manufacturer series: T63YB Track material: cermet Kind of potentiometer: multiturn Potentiometer standard - inch: 1/4" Mounting: THT Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Max. operating voltage: 250V |
на замовлення 808 шт: термін постачання 21-30 дні (днів) |
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T93XB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Max. operating voltage: 250V IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 22 ±5 Number of electrical turns: 19 ±2 Characteristics: linear Torque: 1,5Ncm Manufacturer series: T93XB Track material: cermet Kind of potentiometer: multiturn Engineering PN: 64Z; 67Z; 3296Z Potentiometer standard - inch: 3/8" Mounting: THT Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C |
на замовлення 662 шт: термін постачання 21-30 дні (днів) |
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T93YB103KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Max. operating voltage: 250V IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 22 ±5 Number of electrical turns: 19 ±2 Characteristics: linear Torque: 1,5Ncm Manufacturer series: T93YB Track material: cermet Kind of potentiometer: multiturn Engineering PN: 64Y; 67Y; 3296Y Potentiometer standard - inch: 3/8" Mounting: THT Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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1N5400-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA Quantity in set/package: 1400pcs. Capacitance: 30pF |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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VS-36MT60 | VISHAY |
![]() Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors Case: D-63 Kind of package: bulk Leads dimensions: 6.3x0.8mm |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHF12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHP12N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55C13-TAP | VISHAY |
![]() ![]() Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 16800 шт: термін постачання 21-30 дні (днів) |
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IRFP22N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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IRFP23N50LPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFP244PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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IRFP250PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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IRFP254PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IRFP260PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
на замовлення 583 шт: термін постачання 21-30 дні (днів) |
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IRFP264PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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IRFP27N60KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 500W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 667 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/57T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Quantity in set/package: 850pcs. Case: SMC Max. off-state voltage: 40V Max. forward voltage: 0.5V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: 7 inch reel Type of diode: Schottky rectifying |
на замовлення 1647 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/9AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Quantity in set/package: 3500pcs. Case: SMC Max. off-state voltage: 40V Max. forward voltage: 0.5V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Leakage current: 20mA Kind of package: 13 inch reel Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS15P3S-M3/87A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 50V; 1A; 6500pcs. Case: SMPC; TO277A Mounting: SMD Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: 13 inch reel Type of diode: Schottky rectifying Quantity in set/package: 6500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Max. forward voltage: 0.75V Heatsink thickness: 1.14...1.39mm |
на замовлення 808 шт: термін постачання 21-30 дні (днів) |
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IHLP5050CEER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 30.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 7A Inductance: 10µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 3.3mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 24A Inductance: 1µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IHLP5050CEER1R5M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Type of inductor: wire Mounting: SMD Inductance: 1.5µH Operating current: 19A Resistance: 5.1mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Operating temperature: -55...125°C |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IHLP5050CEER2R2M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 7.2mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 16A Inductance: 2.2µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEER3R3M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 11mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 12A Inductance: 3.3µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEER4R7M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 14.3mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 10A Inductance: 4.7µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEER5R6M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Resistance: 18.3mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 9.5A Inductance: 5.6µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEER6R8M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 19.8mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 9A Inductance: 6.8µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEERR47M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 1.6mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 32A Inductance: 0.47µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050CEERR68M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 2.3mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x3.5mm Operating current: 28A Inductance: 0.68µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050EZER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 21.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x5mm Operating current: 9A Inductance: 10µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050EZER2R2M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 4.6mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x5mm Operating current: 20A Inductance: 2.2µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050EZER3R3M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 7.7mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x5mm Operating current: 15A Inductance: 3.3µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050EZER4R7M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 12.8mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x5mm Operating current: 12A Inductance: 4.7µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050EZER6R8M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Mounting: SMD Operating temperature: -55...125°C Resistance: 15.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x5mm Operating current: 11A Inductance: 6.8µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050FDER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Type of inductor: wire Mounting: SMD Inductance: 10µH Operating current: 10A Resistance: 16.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating temperature: -55...125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050FDER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Mounting: SMD Operating temperature: -55...125°C Resistance: 1.7mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating current: 32A Inductance: 1µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050FDER2R2M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Mounting: SMD Operating temperature: -55...125°C Resistance: 3.5mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating current: 22A Inductance: 2.2µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IHLP5050FDER3R3M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Mounting: SMD Operating temperature: -55...125°C Resistance: 5.7mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating current: 18A Inductance: 3.3µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2N7002-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4030 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 5050 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 7334 шт: термін постачання 21-30 дні (днів) |
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SIHB15N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHF15N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHP15N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SF1600-TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Mounting: THT Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 3.4V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 30A |
на замовлення 2439 шт: термін постачання 21-30 дні (днів) |
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SF1600-TR | VISHAY |
![]() Description: Diode: rectifying; THT; 1.6kV; 1A; 10 inch reel; Ifsm: 30A; SOD57 Mounting: THT Kind of package: 10 inch reel Type of diode: rectifying Quantity in set/package: 5000pcs. Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 3.4V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 30A Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FESF16JT-E3/45 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 16A; tube; Ifsm: 250A; TO220FP-2; 50ns Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Case: TO220FP-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.5V Load current: 16A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 250A |
на замовлення 842 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Leakage current: 5mA |
на замовлення 5056 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/61T | VISHAY |
![]() ![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 8007 шт: термін постачання 21-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Application: automotive industry Quantity in set/package: 1800pcs. |
на замовлення 8135 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKED | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Mounting: SMD |
на замовлення 7800 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402 Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Manufacturer series: CRCW0402 Operating temperature: -55...155°C Mounting: SMD |
на замовлення 32600 шт: термін постачання 21-30 дні (днів) |
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SMAJ15A-E3/61 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.91 грн |
27+ | 14.97 грн |
34+ | 11.90 грн |
50+ | 9.85 грн |
100+ | 8.19 грн |
178+ | 5.20 грн |
VS-ETH3006FP-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
на замовлення 418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.74 грн |
4+ | 126.86 грн |
10+ | 97.70 грн |
27+ | 92.19 грн |
IRFP240PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 355 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 139.16 грн |
10+ | 115.83 грн |
13+ | 71.70 грн |
36+ | 67.76 грн |
T63XB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 266.44 грн |
6+ | 154.44 грн |
17+ | 146.56 грн |
T63YB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
на замовлення 808 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 293.60 грн |
7+ | 131.59 грн |
20+ | 124.49 грн |
T93XB103KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Max. operating voltage: 250V
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Characteristics: linear
Torque: 1,5Ncm
Manufacturer series: T93XB
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Z; 67Z; 3296Z
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Max. operating voltage: 250V
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Characteristics: linear
Torque: 1,5Ncm
Manufacturer series: T93XB
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Z; 67Z; 3296Z
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
на замовлення 662 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 102.67 грн |
10+ | 81.95 грн |
14+ | 68.55 грн |
38+ | 64.61 грн |
200+ | 63.03 грн |
T93YB103KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Max. operating voltage: 250V
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Characteristics: linear
Torque: 1,5Ncm
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Y; 67Y; 3296Y
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Max. operating voltage: 250V
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Characteristics: linear
Torque: 1,5Ncm
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Y; 67Y; 3296Y
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 135.77 грн |
5+ | 100.86 грн |
15+ | 64.61 грн |
40+ | 60.67 грн |
1N5400-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Quantity in set/package: 1400pcs.
Capacitance: 30pF
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 424.27 грн |
VS-36MT60 |
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Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors
Case: D-63
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors
Case: D-63
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1004.68 грн |
3+ | 881.70 грн |
SIHB12N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB12N60ET1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHF12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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SIHP12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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BZX55C13-TAP | ![]() |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 16800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.78 грн |
230+ | 1.77 грн |
500+ | 1.42 грн |
700+ | 1.32 грн |
1920+ | 1.25 грн |
10000+ | 1.21 грн |
IRFP22N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 347.90 грн |
6+ | 158.38 грн |
16+ | 149.71 грн |
IRFP23N50LPBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
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IRFP244PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 123.04 грн |
5+ | 103.22 грн |
12+ | 79.58 грн |
32+ | 75.64 грн |
IRFP250PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 267.29 грн |
10+ | 113.46 грн |
11+ | 87.46 грн |
29+ | 82.73 грн |
IRFP254PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 313.96 грн |
9+ | 112.67 грн |
23+ | 106.37 грн |
IRFP260PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 583 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 310.57 грн |
6+ | 174.13 грн |
15+ | 164.68 грн |
IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 352.15 грн |
6+ | 157.59 грн |
17+ | 148.92 грн |
IRFP27N60KPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 637.26 грн |
4+ | 277.35 грн |
10+ | 262.38 грн |
1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 667 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.12 грн |
12+ | 35.69 грн |
46+ | 20.09 грн |
127+ | 18.99 грн |
SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Quantity in set/package: 850pcs.
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Quantity in set/package: 850pcs.
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
на замовлення 1647 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 38.18 грн |
15+ | 26.79 грн |
98+ | 9.46 грн |
269+ | 8.98 грн |
SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 20mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 20mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
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SS15P3S-M3/87A |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 50V; 1A; 6500pcs.
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 6500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 50V; 1A; 6500pcs.
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 6500pcs.
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MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Heatsink thickness: 1.14...1.39mm
на замовлення 808 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.10 грн |
6+ | 74.85 грн |
17+ | 57.52 грн |
45+ | 54.37 грн |
IHLP5050CEER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 30.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Inductance: 10µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 30.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Inductance: 10µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 3.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 3.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER1R5M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Mounting: SMD
Inductance: 1.5µH
Operating current: 19A
Resistance: 5.1mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Operating temperature: -55...125°C
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Mounting: SMD
Inductance: 1.5µH
Operating current: 19A
Resistance: 5.1mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Operating temperature: -55...125°C
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.37 грн |
10+ | 67.76 грн |
50+ | 59.88 грн |
100+ | 48.85 грн |
500+ | 46.49 грн |
IHLP5050CEER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 7.2mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 7.2mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 11mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 11mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER4R7M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 14.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 14.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER5R6M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 18.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Inductance: 5.6µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 18.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Inductance: 5.6µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEER6R8M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 19.8mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 19.8mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEERR47M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1.6mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Inductance: 0.47µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1.6mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Inductance: 0.47µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050CEERR68M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 2.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Inductance: 0.68µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 2.3mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Inductance: 0.68µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050EZER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 21.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Inductance: 10µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 21.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Inductance: 10µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050EZER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 4.6mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 4.6mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050EZER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 7.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 7.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050EZER4R7M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 12.8mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 12.8mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050EZER6R8M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 15.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 15.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050FDER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050FDER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050FDER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 3.5mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 3.5mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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IHLP5050FDER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 5.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 5.7mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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2N7002-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4030 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.18 грн |
53+ | 7.56 грн |
100+ | 5.35 грн |
305+ | 3.03 грн |
839+ | 2.87 грн |
2N7002K-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 5050 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
52+ | 8.26 грн |
69+ | 5.74 грн |
100+ | 5.18 грн |
371+ | 2.50 грн |
1019+ | 2.36 грн |
2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 7334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.88 грн |
48+ | 8.35 грн |
67+ | 5.94 грн |
390+ | 2.37 грн |
1072+ | 2.25 грн |
SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SF1600-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Case: SOD57
Max. off-state voltage: 1.6kV
Max. forward voltage: 3.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Case: SOD57
Max. off-state voltage: 1.6kV
Max. forward voltage: 3.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
на замовлення 2439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.34 грн |
15+ | 27.26 грн |
45+ | 20.88 грн |
122+ | 19.78 грн |
1000+ | 19.62 грн |
2000+ | 19.54 грн |
SF1600-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; 10 inch reel; Ifsm: 30A; SOD57
Mounting: THT
Kind of package: 10 inch reel
Type of diode: rectifying
Quantity in set/package: 5000pcs.
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Case: SOD57
Max. off-state voltage: 1.6kV
Max. forward voltage: 3.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; 10 inch reel; Ifsm: 30A; SOD57
Mounting: THT
Kind of package: 10 inch reel
Type of diode: rectifying
Quantity in set/package: 5000pcs.
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Case: SOD57
Max. off-state voltage: 1.6kV
Max. forward voltage: 3.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Leakage current: 50µA
товару немає в наявності
В кошику
од. на суму грн.
FESF16JT-E3/45 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 16A; tube; Ifsm: 250A; TO220FP-2; 50ns
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 16A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 16A; tube; Ifsm: 250A; TO220FP-2; 50ns
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 16A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 250A
на замовлення 842 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.40 грн |
10+ | 89.82 грн |
12+ | 81.95 грн |
31+ | 78.01 грн |
100+ | 74.85 грн |
SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Leakage current: 5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Leakage current: 5mA
на замовлення 5056 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.88 грн |
46+ | 8.75 грн |
54+ | 7.38 грн |
100+ | 6.80 грн |
238+ | 3.90 грн |
652+ | 3.69 грн |
5000+ | 3.55 грн |
SS16-E3/61T | ![]() |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 8007 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.12 грн |
100+ | 8.30 грн |
258+ | 3.59 грн |
708+ | 3.40 грн |
SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 1800pcs.
на замовлення 8135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.21 грн |
30+ | 13.32 грн |
34+ | 11.66 грн |
50+ | 10.24 грн |
100+ | 8.98 грн |
164+ | 5.67 грн |
450+ | 5.36 грн |
CRCW04024K70FKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 7800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
500+ | 1.04 грн |
600+ | 0.70 грн |
1000+ | 0.55 грн |
2500+ | 0.41 грн |
5000+ | 0.37 грн |
5100+ | 0.18 грн |
CRCW04024K70FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 32600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
400+ | 1.15 грн |
1000+ | 0.41 грн |
9900+ | 0.09 грн |