Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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293D475X9025B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
на замовлення 5946 шт: термін постачання 21-30 дні (днів) |
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293D475X9025C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Roll diameter max.: 178mm Manufacturer series: Tantamount Case - mm: 6032 Case - inch: 2312 Case: C |
на замовлення 2373 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y105KXATW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 16665 шт: термін постачання 21-30 дні (днів) |
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T63YB102KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB Resistance: 1kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Characteristics: linear Torque: 1Ncm Manufacturer series: T63YB Track material: cermet Kind of potentiometer: multiturn Potentiometer standard - inch: 1/4" Mounting: THT Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Max. operating voltage: 250V |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
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1N4448TAP | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: Ammo Pack Power dissipation: 0.44W |
на замовлення 9724 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: 14 inch reel Power dissipation: 0.44W Quantity in set/package: 10000pcs. |
на замовлення 26303 шт: термін постачання 21-30 дні (днів) |
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1N4448W-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Kind of package: 7 inch reel Power dissipation: 0.28W Quantity in set/package: 3000pcs. |
на замовлення 5224 шт: термін постачання 21-30 дні (днів) |
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1N4448W-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Kind of package: 7 inch reel Power dissipation: 0.28W Quantity in set/package: 3000pcs. Application: automotive industry |
на замовлення 2825 шт: термін постачання 21-30 дні (днів) |
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SIHA240N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHD240N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D476X0016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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293D476X9010B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
на замовлення 2243 шт: термін постачання 21-30 дні (днів) |
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293D476X9010C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 6032 Case - inch: 2312 Case: C |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
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293D476X9016C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 6032 Case - inch: 2312 Case: C |
на замовлення 3137 шт: термін постачання 21-30 дні (днів) |
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293D476X9016D2TE3 | VISHAY |
![]() ![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 2282 шт: термін постачання 21-30 дні (днів) |
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293D476X9020D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 719 шт: термін постачання 21-30 дні (днів) |
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293D476X96R3B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
на замовлення 3752 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: 293D ESR value: 0.5Ω Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 747 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: E Case - mm: 7343 Case - inch: 2917 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VJ1206Y105KXATW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 22615 шт: термін постачання 21-30 дні (днів) |
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SMBJ18CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Technology: TransZorb® |
на замовлення 3268 шт: термін постачання 21-30 дні (днів) |
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1N5408-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD Leakage current: 0.5mA Kind of package: 13 inch reel Type of diode: rectifying Mounting: THT Capacitance: 30pF Quantity in set/package: 1400pcs. Max. off-state voltage: 1kV Case: DO201AD Max. forward voltage: 1.2V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A |
на замовлення 2455 шт: термін постачання 21-30 дні (днів) |
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2W10G-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 60A Case: WOG Electrical mounting: THT Kind of package: bulk Version: round Features of semiconductor devices: glass passivated Leads: wire Ø 0.75mm Max. forward voltage: 1.1V |
на замовлення 1809 шт: термін постачання 21-30 дні (днів) |
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CRCW0805120RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 47800 шт: термін постачання 21-30 дні (днів) |
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MAL214699111E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -40...125°C Body dimensions: 16x16x21mm |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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MAL204831102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Manufacturer series: MAL2048 Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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MAL204861102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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GRC00JE1021H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm Terminal pitch: 7.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MAL215031102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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ZRC00JG1021H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x25mm |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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SI7852DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 80V Drain current: 7.6A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS26-E3/52T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Case: SMB Max. off-state voltage: 60V Max. forward voltage: 0.7V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 75A Kind of package: 7 inch reel Type of diode: Schottky rectifying Quantity in set/package: 750pcs. Mounting: SMD |
на замовлення 8159 шт: термін постачання 21-30 дні (днів) |
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SS26HE3_A/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Application: automotive industry Kind of package: 7 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.7V Max. off-state voltage: 60V Quantity in set/package: 750pcs. Case: SMB Semiconductor structure: single diode Max. forward impulse current: 75A |
на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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SS26S-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Leakage current: 10mA Kind of package: 13 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.62V Max. off-state voltage: 60V Quantity in set/package: 7500pcs. Case: SMA Semiconductor structure: single diode Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26S-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Leakage current: 10mA Kind of package: 7 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.62V Max. off-state voltage: 60V Quantity in set/package: 1800pcs. Case: SMA Semiconductor structure: single diode Max. forward impulse current: 40A |
на замовлення 1511 шт: термін постачання 21-30 дні (днів) |
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SISS26DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Mounting: SMD Drain-source voltage: 60V Drain current: 60A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SISS26LDN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Mounting: SMD Drain-source voltage: 60V Drain current: 65A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSSS2600 | VISHAY |
![]() Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Radiant power: 2.6mW Viewing angle: 25° Operating voltage: 1.25...1.6V DC Mounting: THT Dimensions: 3.6x2.2x5mm LED current: 100mA LED version: angular |
на замовлення 3568 шт: термін постачання 21-30 дні (днів) |
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IRF840ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 307 шт: термін постачання 21-30 дні (днів) |
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IRF840ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 393 шт: термін постачання 21-30 дні (днів) |
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IRF840ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840LCPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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IRF840SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 954 шт: термін постачання 21-30 дні (днів) |
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IRF840STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
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1.5KE10CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 20µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 689 шт: термін постачання 21-30 дні (днів) |
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BAS40-05-E3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Features of semiconductor devices: small signal Reverse recovery time: 5ns Power dissipation: 0.2W Quantity in set/package: 3000pcs. |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 1333 шт: термін постачання 21-30 дні (днів) |
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TCST2300 | VISHAY |
![]() ![]() Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 0.25mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 0.5mA |
на замовлення 1810 шт: термін постачання 21-30 дні (днів) |
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CRCW0805110RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 110Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 12700 шт: термін постачання 21-30 дні (днів) |
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1N5822-E3/54 | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 3948 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 5367 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TR | VISHAY |
![]() ![]() Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Quantity in set/package: 5000pcs. |
на замовлення 1331 шт: термін постачання 21-30 дні (днів) |
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BZX85C27-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 18300 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 1642 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 1290 шт: термін постачання 21-30 дні (днів) |
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IRF740LCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 39nC Kind of package: tube |
на замовлення 804 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 442 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 793 шт: термін постачання 21-30 дні (днів) |
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293D475X9025B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
на замовлення 5946 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.40 грн |
21+ | 18.91 грн |
50+ | 14.18 грн |
100+ | 12.45 грн |
125+ | 7.41 грн |
343+ | 7.01 грн |
2000+ | 6.86 грн |
293D475X9025C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
на замовлення 2373 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 46.67 грн |
16+ | 24.82 грн |
50+ | 18.36 грн |
97+ | 9.61 грн |
265+ | 9.06 грн |
1000+ | 8.75 грн |
VJ0805Y105KXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 16665 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 8.32 грн |
160+ | 2.62 грн |
300+ | 2.13 грн |
490+ | 1.90 грн |
1340+ | 1.80 грн |
6000+ | 1.76 грн |
T63YB102KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Characteristics: linear
Torque: 1Ncm
Manufacturer series: T63YB
Track material: cermet
Kind of potentiometer: multiturn
Potentiometer standard - inch: 1/4"
Mounting: THT
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 250V
на замовлення 381 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 274.93 грн |
7+ | 147.34 грн |
18+ | 139.46 грн |
50+ | 138.68 грн |
1N4448TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
на замовлення 9724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.98 грн |
90+ | 4.41 грн |
125+ | 3.15 грн |
143+ | 2.76 грн |
250+ | 2.29 грн |
500+ | 1.96 грн |
670+ | 1.38 грн |
1842+ | 1.30 грн |
1N4448TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
на замовлення 26303 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.64 грн |
125+ | 3.15 грн |
500+ | 2.29 грн |
747+ | 1.24 грн |
2054+ | 1.17 грн |
1N4448W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.28W
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.28W
Quantity in set/package: 3000pcs.
на замовлення 5224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 10.86 грн |
61+ | 6.46 грн |
100+ | 4.22 грн |
500+ | 3.08 грн |
503+ | 1.84 грн |
1382+ | 1.73 грн |
1N4448W-HE3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.28W
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.28W
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 2825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
125+ | 3.39 грн |
150+ | 3.06 грн |
SIHA240N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHD240N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
293D476X0016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.97 грн |
15+ | 26.95 грн |
50+ | 20.88 грн |
58+ | 15.92 грн |
160+ | 15.05 грн |
500+ | 14.73 грн |
293D476X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
на замовлення 2243 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.94 грн |
23+ | 17.73 грн |
50+ | 13.71 грн |
100+ | 11.66 грн |
110+ | 8.43 грн |
301+ | 7.96 грн |
293D476X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.79 грн |
25+ | 16.31 грн |
50+ | 12.06 грн |
98+ | 9.46 грн |
269+ | 8.90 грн |
293D476X9016C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 6032
Case - inch: 2312
Case: C
на замовлення 3137 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.76 грн |
19+ | 20.96 грн |
50+ | 17.41 грн |
71+ | 13.00 грн |
195+ | 12.29 грн |
1000+ | 12.13 грн |
2000+ | 11.82 грн |
293D476X9016D2TE3 | ![]() |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 2282 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.06 грн |
14+ | 29.15 грн |
50+ | 18.67 грн |
75+ | 12.37 грн |
206+ | 11.66 грн |
293D476X9020D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 719 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.91 грн |
15+ | 26.71 грн |
50+ | 21.51 грн |
54+ | 17.26 грн |
148+ | 16.31 грн |
293D476X96R3B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
на замовлення 3752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.64 грн |
17+ | 23.48 грн |
19+ | 21.12 грн |
50+ | 16.39 грн |
100+ | 14.58 грн |
101+ | 9.16 грн |
278+ | 8.66 грн |
2000+ | 8.35 грн |
293D477X96R3D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 747 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 104.37 грн |
10+ | 79.58 грн |
18+ | 53.58 грн |
48+ | 50.43 грн |
293D477X96R3E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
товару немає в наявності
В кошику
од. на суму грн.
VJ1206Y105KXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 22615 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.41 грн |
50+ | 8.43 грн |
250+ | 6.51 грн |
408+ | 2.26 грн |
1120+ | 2.14 грн |
2000+ | 2.07 грн |
SMBJ18CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Technology: TransZorb®
на замовлення 3268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.15 грн |
23+ | 17.26 грн |
100+ | 11.11 грн |
135+ | 6.84 грн |
371+ | 6.46 грн |
1N5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Leakage current: 0.5mA
Kind of package: 13 inch reel
Type of diode: rectifying
Mounting: THT
Capacitance: 30pF
Quantity in set/package: 1400pcs.
Max. off-state voltage: 1kV
Case: DO201AD
Max. forward voltage: 1.2V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Leakage current: 0.5mA
Kind of package: 13 inch reel
Type of diode: rectifying
Mounting: THT
Capacitance: 30pF
Quantity in set/package: 1400pcs.
Max. off-state voltage: 1kV
Case: DO201AD
Max. forward voltage: 1.2V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
на замовлення 2455 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.40 грн |
22+ | 18.52 грн |
50+ | 15.29 грн |
100+ | 13.95 грн |
142+ | 6.54 грн |
390+ | 6.15 грн |
2W10G-E4/51 |
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Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: WOG
Electrical mounting: THT
Kind of package: bulk
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. forward voltage: 1.1V
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: WOG
Electrical mounting: THT
Kind of package: bulk
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. forward voltage: 1.1V
на замовлення 1809 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.04 грн |
10+ | 45.62 грн |
54+ | 17.26 грн |
148+ | 16.31 грн |
CRCW0805120RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 47800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.26 грн |
500+ | 1.15 грн |
1000+ | 0.72 грн |
2500+ | 0.38 грн |
5000+ | 0.35 грн |
MAL214699111E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
на замовлення 164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 310.57 грн |
6+ | 178.07 грн |
15+ | 167.83 грн |
100+ | 161.53 грн |
MAL204831102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Manufacturer series: MAL2048
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Manufacturer series: MAL2048
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 114 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 199.41 грн |
10+ | 143.40 грн |
11+ | 87.46 грн |
30+ | 82.73 грн |
MAL204861102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 257.11 грн |
10+ | 102.43 грн |
25+ | 96.92 грн |
GRC00JE1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
товару немає в наявності
В кошику
од. на суму грн.
MAL215031102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 267 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 274.93 грн |
8+ | 115.83 грн |
22+ | 109.52 грн |
ZRC00JG1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
на замовлення 189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.55 грн |
10+ | 68.39 грн |
27+ | 35.46 грн |
72+ | 33.57 грн |
SI7852DP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
SS26-E3/52T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Case: SMB
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 750pcs.
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Case: SMB
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 750pcs.
Mounting: SMD
на замовлення 8159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.09 грн |
20+ | 20.33 грн |
50+ | 13.55 грн |
100+ | 11.27 грн |
138+ | 6.70 грн |
380+ | 6.38 грн |
1500+ | 6.22 грн |
SS26HE3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Application: automotive industry
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Application: automotive industry
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
на замовлення 730 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.88 грн |
15+ | 26.32 грн |
25+ | 23.32 грн |
46+ | 20.14 грн |
127+ | 19.04 грн |
SS26S-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
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SS26S-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
на замовлення 1511 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.70 грн |
21+ | 19.46 грн |
28+ | 14.34 грн |
79+ | 11.74 грн |
218+ | 11.11 грн |
500+ | 10.64 грн |
SISS26DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
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SISS26LDN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 65A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 65A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
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TSSS2600 |
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Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
на замовлення 3568 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.34 грн |
14+ | 29.00 грн |
25+ | 24.58 грн |
50+ | 20.88 грн |
61+ | 15.44 грн |
166+ | 14.58 грн |
IRF840ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IRF840APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 307 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 140.01 грн |
10+ | 107.16 грн |
17+ | 55.16 грн |
46+ | 52.00 грн |
IRF840ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.98 грн |
10+ | 85.10 грн |
15+ | 63.03 грн |
41+ | 59.10 грн |
IRF840ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
IRF840LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 727 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 110.31 грн |
16+ | 60.67 грн |
42+ | 57.52 грн |
IRF840SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 954 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.50 грн |
10+ | 81.95 грн |
17+ | 55.94 грн |
45+ | 53.58 грн |
IRF840STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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1.5KE10CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 689 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.03 грн |
13+ | 31.36 грн |
50+ | 18.67 грн |
136+ | 17.65 грн |
BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.03 грн |
57+ | 7.01 грн |
100+ | 4.00 грн |
369+ | 2.50 грн |
1014+ | 2.37 грн |
1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.34 грн |
15+ | 27.81 грн |
50+ | 18.60 грн |
137+ | 17.57 грн |
TCST2300 | ![]() |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
на замовлення 1810 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.98 грн |
10+ | 65.40 грн |
23+ | 41.21 грн |
62+ | 38.92 грн |
CRCW0805110RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 12700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.26 грн |
500+ | 1.15 грн |
1000+ | 0.72 грн |
2500+ | 0.38 грн |
5000+ | 0.35 грн |
1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 3948 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.24 грн |
18+ | 22.46 грн |
89+ | 10.40 грн |
245+ | 9.85 грн |
BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 5367 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.28 грн |
13+ | 30.73 грн |
68+ | 13.71 грн |
185+ | 13.00 грн |
5000+ | 12.69 грн |
BYV26C-TR | ![]() |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
на замовлення 1331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.97 грн |
12+ | 34.51 грн |
20+ | 31.83 грн |
58+ | 16.15 грн |
158+ | 15.29 грн |
BZX85C27-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 18300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.58 грн |
46+ | 8.59 грн |
54+ | 7.34 грн |
100+ | 5.76 грн |
250+ | 5.26 грн |
297+ | 3.11 грн |
817+ | 2.94 грн |
1000+ | 2.84 грн |
10000+ | 2.83 грн |
1.5KE400A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 1642 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.55 грн |
16+ | 25.92 грн |
47+ | 19.86 грн |
128+ | 18.75 грн |
1400+ | 18.52 грн |
IRF740APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 196.86 грн |
10+ | 89.82 грн |
14+ | 66.19 грн |
39+ | 63.03 грн |
IRF740ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 1290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 175.65 грн |
10+ | 107.95 грн |
14+ | 70.13 грн |
37+ | 66.19 грн |
IRF740LCPBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
на замовлення 804 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 133.22 грн |
19+ | 51.22 грн |
50+ | 48.06 грн |
IRF740PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 442 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.68 грн |
10+ | 102.43 грн |
23+ | 41.76 грн |
61+ | 39.40 грн |
IRF740SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 793 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 169.71 грн |
13+ | 76.43 грн |
34+ | 72.49 грн |