Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SS16HE3_B/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Application: automotive industry Quantity in set/package: 1800pcs. |
на замовлення 8135 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKED | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Mounting: SMD |
на замовлення 7800 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402 Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Manufacturer series: CRCW0402 Operating temperature: -55...155°C Mounting: SMD |
на замовлення 32600 шт: термін постачання 21-30 дні (днів) |
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CRCW0603240RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 240Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 7300 шт: термін постачання 21-30 дні (днів) |
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IRF840PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 2571 шт: термін постачання 21-30 дні (днів) |
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BZX55B10-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 5156 шт: термін постачання 21-30 дні (днів) |
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GRC00JG4702W00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C Tolerance: ±20% Operating temperature: -40...105°C Type of capacitor: electrolytic Capacitance: 47µF Operating voltage: 450V DC Service life: 2000h Dimensions: 16x25mm Mounting: THT |
на замовлення 2531 шт: термін постачання 21-30 дні (днів) |
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MAL204317479E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Body dimensions: Ø18x38mm Tolerance: ±20% Service life: 10000h Operating temperature: -25...85°C Leads: axial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GRC00JG3321E00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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IRF530PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 2667 шт: термін постачання 21-30 дні (днів) |
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IRF530SPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
![]() ![]() Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2944 шт: термін постачання 21-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 10051 шт: термін постачання 21-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
на замовлення 682 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
на замовлення 13892 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/73 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
на замовлення 11676 шт: термін постачання 21-30 дні (днів) |
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293D476X0025D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 2486 шт: термін постачання 21-30 дні (днів) |
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293D476X9025D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 1561 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y104KXAMT | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VJ1206Y104KXAPW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VJ1206Y104KXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 25637 шт: термін постачання 21-30 дні (днів) |
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SM6T6V8A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SM6T Technology: TransZorb® |
на замовлення 5514 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1mA Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1494 шт: термін постачання 21-30 дні (днів) |
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SI4800BDY-T1-E3 | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W Polarisation: unipolar Drain current: 7A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±25V Pulsed drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
на замовлення 1845 шт: термін постачання 21-30 дні (днів) |
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1N4148-TAP | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: DO35 Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: Ammo Pack |
на замовлення 14643 шт: термін постачання 21-30 дні (днів) |
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VS-HFA25TB60-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 55pF Kind of package: tube Max. forward impulse current: 225A Case: TO220AC Max. forward voltage: 1.3V Reverse recovery time: 23ns |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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SIHA20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHB20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SIHG20N50C-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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SIHG20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SiHH20N50E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHP20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BPW34 | VISHAY |
![]() Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Active area: 7.5mm2 Dimensions: 5.4x4.3x3.2mm Viewing angle: 65° Radiant power: 215mW |
на замовлення 2139 шт: термін постачання 21-30 дні (днів) |
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BPW34S | VISHAY |
![]() ![]() Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Viewing angle: 65° Active area: 7.5mm2 Dimensions: 5.4x4.3x3.2mm Radiant power: 215mW |
на замовлення 431 шт: термін постачання 21-30 дні (днів) |
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VBPW34FAS | VISHAY |
![]() Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C LED lens: black |
на замовлення 816 шт: термін постачання 21-30 дні (днів) |
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VBPW34S | VISHAY |
![]() Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 430...1100nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C |
на замовлення 2445 шт: термін постачання 21-30 дні (днів) |
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MAL213661101E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 50V DC Body dimensions: Ø10x12mm Tolerance: ±20% Service life: 4000h Operating temperature: -55...105°C Terminal pitch: 5mm |
на замовлення 410 шт: термін постачання 21-30 дні (днів) |
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IRF9630PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB Case: TO220AB Drain-source voltage: -200V Drain current: -4A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF9630SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Case: D2PAK; TO263 Drain-source voltage: -200V Drain current: -4A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD |
на замовлення 347 шт: термін постачання 21-30 дні (днів) |
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IRFI9630GPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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SIHJ7N65E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CRCW12060000Z0TABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C Mounting: SMD Resistance: 0Ω Tolerance: ±5% Operating temperature: -55...155°C Power: 0.25W Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
на замовлення 94100 шт: термін постачання 21-30 дні (днів) |
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BAV70-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal |
на замовлення 16393 шт: термін постачання 21-30 дні (днів) |
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BAV70-G3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06M-E3/45 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM Max. off-state voltage: 0.6kV Load current: 1A Case: DFM Kind of package: tube Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 3486 шт: термін постачання 21-30 дні (днів) |
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DF06S-E3/45 | VISHAY |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06S-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 1995 шт: термін постачання 21-30 дні (днів) |
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DF06SA-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LL4148-GS08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Quantity in set/package: 2500pcs. |
на замовлення 92385 шт: термін постачання 21-30 дні (днів) |
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LL4148-GS18 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Quantity in set/package: 10000pcs. |
на замовлення 51746 шт: термін постачання 21-30 дні (днів) |
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1N4448WS-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.35A Leakage current: 50µA Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4448WS-HE3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.35A Leakage current: 50µA Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 3000pcs. Application: automotive industry |
на замовлення 1650 шт: термін постачання 21-30 дні (днів) |
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GRC00JS4721E00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 16x31.5mm Service life: 2000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MAL215746471E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 470µF Operating voltage: 400V DC Body dimensions: Ø30x50mm Tolerance: ±20% Service life: 5000h Operating temperature: -25...85°C Terminal pitch: 10mm |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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MAL204850472E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 35V DC Body dimensions: Ø18x35mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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293D106X0050E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: E |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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293D106X9050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 3818 шт: термін постачання 21-30 дні (днів) |
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293D106X9050E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: E |
на замовлення 604 шт: термін постачання 21-30 дні (днів) |
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293D475X0050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 427 шт: термін постачання 21-30 дні (днів) |
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293D475X9050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Roll diameter max.: 178mm Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 604 шт: термін постачання 21-30 дні (днів) |
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SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 1800pcs.
на замовлення 8135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.21 грн |
30+ | 13.32 грн |
34+ | 11.66 грн |
50+ | 10.24 грн |
100+ | 8.98 грн |
164+ | 5.67 грн |
450+ | 5.36 грн |
CRCW04024K70FKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 7800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
500+ | 1.04 грн |
600+ | 0.70 грн |
1000+ | 0.55 грн |
2500+ | 0.41 грн |
5000+ | 0.37 грн |
5100+ | 0.18 грн |
CRCW04024K70FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 32600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
400+ | 1.15 грн |
1000+ | 0.41 грн |
9900+ | 0.09 грн |
CRCW0603240RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 7300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.90 грн |
500+ | 0.92 грн |
1000+ | 0.55 грн |
3900+ | 0.24 грн |
5000+ | 0.22 грн |
IRF840PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 2571 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.55 грн |
5+ | 96.13 грн |
10+ | 83.52 грн |
21+ | 44.91 грн |
57+ | 42.55 грн |
BZX55B10-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 5156 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
125+ | 3.48 грн |
210+ | 1.91 грн |
500+ | 1.69 грн |
635+ | 1.46 грн |
1735+ | 1.38 грн |
GRC00JG4702W00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Tolerance: ±20%
Operating temperature: -40...105°C
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 450V DC
Service life: 2000h
Dimensions: 16x25mm
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Tolerance: ±20%
Operating temperature: -40...105°C
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 450V DC
Service life: 2000h
Dimensions: 16x25mm
Mounting: THT
на замовлення 2531 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 84.01 грн |
10+ | 44.75 грн |
33+ | 28.52 грн |
89+ | 27.03 грн |
MAL204317479E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...85°C
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...85°C
Leads: axial
товару немає в наявності
В кошику
од. на суму грн.
GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.85 грн |
11+ | 38.29 грн |
41+ | 23.01 грн |
111+ | 21.75 грн |
IRF530PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2667 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.03 грн |
15+ | 28.05 грн |
42+ | 22.22 грн |
115+ | 21.04 грн |
IRF530SPBF | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 60.25 грн |
10+ | 45.86 грн |
30+ | 31.52 грн |
81+ | 29.94 грн |
BZX55C10-TAP | ![]() |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2944 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.64 грн |
88+ | 4.49 грн |
107+ | 3.70 грн |
131+ | 3.01 грн |
151+ | 2.62 грн |
628+ | 1.48 грн |
1727+ | 1.39 грн |
BZX55C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 10051 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.49 грн |
68+ | 5.83 грн |
111+ | 3.55 грн |
500+ | 2.84 грн |
559+ | 1.66 грн |
1537+ | 1.57 грн |
5000+ | 1.50 грн |
MUR460-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
на замовлення 682 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.85 грн |
11+ | 36.25 грн |
49+ | 19.07 грн |
134+ | 17.96 грн |
1N4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
на замовлення 13892 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.88 грн |
100+ | 6.60 грн |
250+ | 5.28 грн |
400+ | 4.63 грн |
450+ | 4.47 грн |
474+ | 1.95 грн |
1304+ | 1.84 грн |
1N4007-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
на замовлення 11676 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.26 грн |
100+ | 4.12 грн |
480+ | 1.93 грн |
1320+ | 1.82 грн |
293D476X0025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 2486 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.28 грн |
33+ | 28.05 грн |
91+ | 26.55 грн |
293D476X9025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 1561 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.49 грн |
12+ | 33.88 грн |
44+ | 21.35 грн |
119+ | 20.17 грн |
VJ1206Y104KXAMT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
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VJ1206Y104KXAPW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
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В кошику
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VJ1206Y104KXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 25637 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
86+ | 4.94 грн |
125+ | 3.15 грн |
174+ | 2.27 грн |
195+ | 2.02 грн |
300+ | 1.74 грн |
500+ | 1.65 грн |
811+ | 1.13 грн |
2227+ | 1.08 грн |
SM6T6V8A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
на замовлення 5514 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.06 грн |
26+ | 15.60 грн |
50+ | 12.06 грн |
100+ | 10.48 грн |
211+ | 4.33 грн |
581+ | 4.10 грн |
1.5KE6.8A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1494 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.82 грн |
12+ | 34.67 грн |
54+ | 17.41 грн |
146+ | 16.47 грн |
SI4800BDY-T1-E3 | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
на замовлення 1845 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.97 грн |
12+ | 33.49 грн |
46+ | 20.33 грн |
125+ | 19.23 грн |
1N4148-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 14643 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.49 грн |
95+ | 4.18 грн |
130+ | 3.04 грн |
150+ | 2.63 грн |
500+ | 1.87 грн |
1254+ | 0.74 грн |
3449+ | 0.69 грн |
VS-HFA25TB60-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
на замовлення 577 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 146.56 грн |
7+ | 140.25 грн |
10+ | 130.80 грн |
50+ | 127.65 грн |
SIHA20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
SIHB20N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
SIHG20N50C-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 424.27 грн |
SIHG20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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SiHH20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BPW34 |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
на замовлення 2139 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.70 грн |
10+ | 41.68 грн |
25+ | 36.95 грн |
43+ | 21.67 грн |
118+ | 20.49 грн |
BPW34S | ![]() |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
на замовлення 431 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.34 грн |
35+ | 27.10 грн |
94+ | 25.61 грн |
VBPW34FAS |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
на замовлення 816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.82 грн |
11+ | 36.64 грн |
46+ | 20.33 грн |
125+ | 19.23 грн |
VBPW34S |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
на замовлення 2445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.07 грн |
10+ | 47.83 грн |
46+ | 20.33 грн |
125+ | 19.23 грн |
2000+ | 18.99 грн |
MAL213661101E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø10x12mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø10x12mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -55...105°C
Terminal pitch: 5mm
на замовлення 410 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.25 грн |
10+ | 60.83 грн |
27+ | 35.06 грн |
73+ | 33.17 грн |
IRF9630PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: THT
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IRF9630SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
на замовлення 347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 191.77 грн |
10+ | 72.49 грн |
21+ | 45.70 грн |
56+ | 43.34 грн |
IRFI9630GPBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 352 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 103.52 грн |
10+ | 63.82 грн |
19+ | 49.64 грн |
52+ | 46.49 грн |
SIHJ7N65E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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CRCW12060000Z0TABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
на замовлення 94100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
140+ | 3.05 грн |
260+ | 1.56 грн |
1040+ | 0.38 грн |
1310+ | 0.30 грн |
4880+ | 0.19 грн |
13410+ | 0.18 грн |
BAV70-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
на замовлення 16393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.88 грн |
50+ | 7.88 грн |
100+ | 5.00 грн |
250+ | 4.14 грн |
500+ | 3.59 грн |
662+ | 1.39 грн |
1819+ | 1.32 грн |
BAV70-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
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DF06M-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 3486 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.09 грн |
19+ | 20.80 грн |
25+ | 15.92 грн |
77+ | 12.13 грн |
210+ | 11.43 грн |
DF06S-E3/45 | ![]() |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DF06S-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 1995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.03 грн |
18+ | 22.85 грн |
54+ | 17.33 грн |
100+ | 17.18 грн |
147+ | 16.39 грн |
200+ | 16.07 грн |
250+ | 15.76 грн |
DF06SA-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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LL4148-GS08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
на замовлення 92385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
109+ | 3.91 грн |
173+ | 2.29 грн |
341+ | 1.16 грн |
703+ | 0.56 грн |
1000+ | 0.44 грн |
2500+ | 0.37 грн |
2730+ | 0.34 грн |
7506+ | 0.32 грн |
LL4148-GS18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
на замовлення 51746 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
103+ | 4.16 грн |
157+ | 2.52 грн |
309+ | 1.28 грн |
400+ | 0.98 грн |
618+ | 0.64 грн |
1000+ | 0.54 грн |
2119+ | 0.43 грн |
5830+ | 0.41 грн |
1N4448WS-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
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1N4448WS-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Leakage current: 50µA
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.64 грн |
76+ | 5.20 грн |
100+ | 3.99 грн |
275+ | 3.36 грн |
500+ | 3.28 грн |
755+ | 3.18 грн |
1000+ | 3.06 грн |
GRC00JS4721E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Service life: 2000h
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MAL215746471E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 400V DC
Body dimensions: Ø30x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 400V DC
Body dimensions: Ø30x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Terminal pitch: 10mm
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1015.71 грн |
2+ | 659.50 грн |
4+ | 624.05 грн |
5+ | 623.26 грн |
MAL204850472E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 35V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 35V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
на замовлення 113 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 425.12 грн |
6+ | 176.71 грн |
15+ | 167.07 грн |
293D106X0050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
на замовлення 158 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.95 грн |
10+ | 86.67 грн |
15+ | 65.40 грн |
40+ | 61.46 грн |
293D106X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 3818 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 112.01 грн |
10+ | 68.47 грн |
28+ | 33.09 грн |
77+ | 31.28 грн |
293D106X9050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
на замовлення 604 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.13 грн |
18+ | 51.22 грн |
50+ | 48.85 грн |
400+ | 48.06 грн |
293D475X0050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 427 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.22 грн |
10+ | 50.43 грн |
29+ | 32.31 грн |
79+ | 30.49 грн |
293D475X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 604 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.73 грн |
10+ | 50.35 грн |
36+ | 26.00 грн |
98+ | 24.58 грн |