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SMAJ550-E3/61 SMAJ550-E3/61 Vishay General Semiconductor - Diodes Division smaj530.pdf Description: TVS DIODE 495VWM 760VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 495V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 550V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMBJ100A-E3/52 SMBJ100A-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5295 шт:
термін постачання 21-31 дні (днів)
13+25.47 грн
19+16.55 грн
100+11.15 грн
Мінімальне замовлення: 13
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SMBJ100CA-E3/52 SMBJ100CA-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3472 шт:
термін постачання 21-31 дні (днів)
11+29.44 грн
17+19.01 грн
100+12.84 грн
Мінімальне замовлення: 11
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SMBJ22A-E3/52 SMBJ22A-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 22VWM 35.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1658 шт:
термін постачання 21-31 дні (днів)
13+26.26 грн
18+17.24 грн
100+6.21 грн
Мінімальне замовлення: 13
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SMBJ60A-E3/52 SMBJ60A-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 60VWM 96.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3821 шт:
термін постачання 21-31 дні (днів)
14+23.08 грн
22+14.41 грн
100+5.33 грн
Мінімальне замовлення: 14
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SMBJ85CA-E3/52 SMBJ85CA-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2610 шт:
термін постачання 21-31 дні (днів)
11+30.24 грн
14+22.30 грн
100+13.37 грн
Мінімальне замовлення: 11
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SMCJ13A-E3/57T SMCJ13A-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 5553 шт:
термін постачання 21-31 дні (днів)
7+49.34 грн
10+31.80 грн
100+21.76 грн
Мінімальне замовлення: 7
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SMCJ75CA-E3/57T SMCJ75CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 2065 шт:
термін постачання 21-31 дні (днів)
8+42.18 грн
10+35.40 грн
100+24.49 грн
Мінімальне замовлення: 8
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SMCJ8.0CA-E3/57T SMCJ8.0CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110.3A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1966 шт:
термін постачання 21-31 дні (днів)
8+45.36 грн
10+37.55 грн
100+26.10 грн
Мінімальне замовлення: 8
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SMCJ85CA-E3/57T SMCJ85CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2291 шт:
термін постачання 21-31 дні (днів)
8+44.57 грн
10+32.34 грн
100+22.57 грн
Мінімальне замовлення: 8
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SMCJ160CA-E3/57T SMCJ160CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 160VWM 259VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
10+35.02 грн
13+25.29 грн
100+18.92 грн
Мінімальне замовлення: 10
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VS-80EPS12PBF VS-80EPS12PBF Vishay General Semiconductor - Diodes Division 80EPS%20Series.pdf Description: DIODE STANDARD 1200V 80A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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V50100PW-M3/4W V50100PW-M3/4W Vishay General Semiconductor - Diodes Division v50100pw.pdf Description: DIODE ARR SCHOTT 100V 25A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 25 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V40100PW-M3/4W V40100PW-M3/4W Vishay General Semiconductor - Diodes Division v40100pw.pdf Description: DIODE ARR SCHOTT 100V 20A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VS-6CWQ10FNPBF VS-6CWQ10FNPBF Vishay General Semiconductor - Diodes Division VS-6CWQ10FNPbF.pdf Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V30100PW-M3/4W V30100PW-M3/4W Vishay General Semiconductor - Diodes Division v30100pw.pdf Description: DIODE ARR SCHOTT 100V 15A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 100 V
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V40100PGW-M3/4W V40100PGW-M3/4W Vishay General Semiconductor - Diodes Division V40100PGW.pdf Description: DIODE ARR SCHOTT 100V 20A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V60200PGW-M3/4W V60200PGW-M3/4W Vishay General Semiconductor - Diodes Division V60200PGW.pdf Description: DIODE ARR SCHOTT 200V 30A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 30 A
Current - Reverse Leakage @ Vr: 210 µA @ 200 V
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V80100PW-M3/4W V80100PW-M3/4W Vishay General Semiconductor - Diodes Division v80100pw.pdf Description: DIODE ARRAY SCHOTTKY 100V TO3PW
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VS-70CRU04PBF Vishay General Semiconductor - Diodes Division Rectifiers_Catalog.pdf Description: DIODE ARRAY GP 400V 35A TO218
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-218
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 35 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-12TTS08PBF VS-12TTS08PBF Vishay General Semiconductor - Diodes Division VS-12TTS08SPbF.pdf Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
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VS-16TTS12FPPBF VS-16TTS12FPPBF Vishay General Semiconductor - Diodes Division 16TTS_FPPbF_High_Voltage_Series.pdf Description: SCR 1.2KV 16A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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VS-25TTS12FPPBF VS-25TTS12FPPBF Vishay General Semiconductor - Diodes Division 25TTS_FPPbF_High_Voltage_Series.pdf Description: SCR 1.2KV 25A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
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VS-10ETF02FPPBF VS-10ETF02FPPBF Vishay General Semiconductor - Diodes Division 10ETF_FPPbF_Soft_Recovery_Series.pdf Description: DIODE GP 200V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF04FPPBF VS-10ETF04FPPBF Vishay General Semiconductor - Diodes Division Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF06FPPBF VS-10ETF06FPPBF Vishay General Semiconductor - Diodes Division 10ETF_FPPbF_Soft_Recovery_Series.pdf Description: DIODE GP 600V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF10FPPBF VS-10ETF10FPPBF Vishay General Semiconductor - Diodes Division VS-10ETF1...%28FPPbF%2CFP-M3%29.pdf Description: DIODE GP 1KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
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VS-10ETF12FPPBF VS-10ETF12FPPBF Vishay General Semiconductor - Diodes Division VS-10ETF1...%28FPPbF%2CFP-M3%29.pdf Description: DIODE GP 1.2KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
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VS-10ETS08FPPBF VS-10ETS08FPPBF Vishay General Semiconductor - Diodes Division VS-10ETS_FPPbF.pdf Description: DIODE GP 800V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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VS-10ETS12FPPBF VS-10ETS12FPPBF Vishay General Semiconductor - Diodes Division VS-10ETS_FPPbF.pdf Description: DIODE GP 1.2KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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VS-30CPF02PBF VS-30CPF02PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF0x.pdf Description: DIODE GEN PURP 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-30CPF06PBF VS-30CPF06PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF0x.pdf Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-30CPF12PBF VS-30CPF12PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF.pdf Description: DIODE GEN PURP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-30EPF02PBF VS-30EPF02PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF0x.pdf Description: DIODE STANDARD 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-30EPF04PBF VS-30EPF04PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF0x.pdf Description: DIODE STANDARD 400V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-30EPF12PBF VS-30EPF12PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF.pdf Description: DIODE STANDARD 1200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-40EPF10PBF VS-40EPF10PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 40A TO247AC
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VS-40EPF12PBF VS-40EPF12PBF Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 1200V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 40
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-60EPF04PBF VS-60EPF04PBF Vishay General Semiconductor - Diodes Division vs-60pf0-m3series.pdf Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-60EPF10PBF VS-60EPF10PBF Vishay General Semiconductor - Diodes Division Description: DIODE GP 1KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-80EPF02PBF VS-80EPF02PBF Vishay General Semiconductor - Diodes Division 80EPF Series.pdf Description: DIODE GEN PURP 200V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-20ETF10FPPBF VS-20ETF10FPPBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 20A TO220FP
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VS-20ETF12FPPBF VS-20ETF12FPPBF Vishay General Semiconductor - Diodes Division Description: DIODE GP 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-70CRU02PBF Vishay General Semiconductor - Diodes Division 70CRU02PbF.pdf Description: DIODE ARRAY GP 200V 35A TO218
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-218
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 35 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
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VS-16TTS08PBF VS-16TTS08PBF Vishay General Semiconductor - Diodes Division VS-16TTS(PbF,M3).pdf Description: SCR 800V 16A TO220AB
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VS-16TTS12PBF VS-16TTS12PBF Vishay General Semiconductor - Diodes Division VS-16TTS%28PbF%2CM3%29.pdf Description: SCR 1.2KV 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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VS-25TTS08PBF VS-25TTS08PBF Vishay General Semiconductor - Diodes Division VS-25TTS..PbF%2CVS-25TTS..-M3%20Series.pdf Description: SCR 800V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
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VS-20ETF12PBF VS-20ETF12PBF Vishay General Semiconductor - Diodes Division vs-20etf08s-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-20ETS08FPPBF VS-20ETS08FPPBF Vishay General Semiconductor - Diodes Division VS-20ETS%28FPPbF%2CFP-M3%29.pdf Description: DIODE GP 800V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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VS-30CPF10PBF VS-30CPF10PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF.pdf Description: DIODE GEN PURP 1KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-30CTH02FPPBF VS-30CTH02FPPBF Vishay General Semiconductor - Diodes Division vs-30cth02fp.pdf Description: DIODE ARRAY GP 200V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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VS-30EPF10PBF VS-30EPF10PBF Vishay General Semiconductor - Diodes Division 30EPF_30CPF.pdf Description: DIODE STANDARD 1000V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-60APU06PBF VS-60APU06PBF Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-60EPF02PBF VS-60EPF02PBF Vishay General Semiconductor - Diodes Division vs-60pf0-m3series.pdf Description: DIODE GP 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-16TTS08FPPBF VS-16TTS08FPPBF Vishay General Semiconductor - Diodes Division 16TTS_FPPbF_High_Voltage_Series.pdf Description: SCR 800V 16A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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VS-25TTS08FPPBF VS-25TTS08FPPBF Vishay General Semiconductor - Diodes Division 25TTS_FPPbF_High_Voltage_Series.pdf Description: SCR 800V 25A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
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VS-25TTS12PBF VS-25TTS12PBF Vishay General Semiconductor - Diodes Division VS-25TTS..PbF%2CVS-25TTS..-M3%20Series.pdf Description: SCR 1.2KV 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
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VS-30TPS08PBF VS-30TPS08PBF Vishay General Semiconductor - Diodes Division Description: SCR 800V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
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VS-30TPS12PBF VS-30TPS12PBF Vishay General Semiconductor - Diodes Division Description: SCR 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
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VS-40TPS08PBF VS-40TPS08PBF Vishay General Semiconductor - Diodes Division Description: SCR 800V 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 800 V
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SMAJ550-E3/61 smaj530.pdf
SMAJ550-E3/61
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 495VWM 760VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 495V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 550V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMBJ100A-E3/52 smbj.pdf
SMBJ100A-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.47 грн
19+16.55 грн
100+11.15 грн
Мінімальне замовлення: 13
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SMBJ100CA-E3/52 smbj.pdf
SMBJ100CA-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3472 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.44 грн
17+19.01 грн
100+12.84 грн
Мінімальне замовлення: 11
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SMBJ22A-E3/52 smbj.pdf
SMBJ22A-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1658 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.26 грн
18+17.24 грн
100+6.21 грн
Мінімальне замовлення: 13
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SMBJ60A-E3/52 smbj.pdf
SMBJ60A-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3821 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.08 грн
22+14.41 грн
100+5.33 грн
Мінімальне замовлення: 14
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SMBJ85CA-E3/52 smbj.pdf
SMBJ85CA-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.24 грн
14+22.30 грн
100+13.37 грн
Мінімальне замовлення: 11
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SMCJ13A-E3/57T smcj.pdf
SMCJ13A-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 5553 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.34 грн
10+31.80 грн
100+21.76 грн
Мінімальне замовлення: 7
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SMCJ75CA-E3/57T smcj.pdf
SMCJ75CA-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 2065 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.18 грн
10+35.40 грн
100+24.49 грн
Мінімальне замовлення: 8
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SMCJ8.0CA-E3/57T smcj.pdf
SMCJ8.0CA-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110.3A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.36 грн
10+37.55 грн
100+26.10 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMCJ85CA-E3/57T smcj.pdf
SMCJ85CA-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.57 грн
10+32.34 грн
100+22.57 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMCJ160CA-E3/57T smcj.pdf
SMCJ160CA-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.02 грн
13+25.29 грн
100+18.92 грн
Мінімальне замовлення: 10
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VS-80EPS12PBF 80EPS%20Series.pdf
VS-80EPS12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 80A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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V50100PW-M3/4W v50100pw.pdf
V50100PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 25A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 25 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V40100PW-M3/4W v40100pw.pdf
V40100PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VS-6CWQ10FNPBF VS-6CWQ10FNPbF.pdf
VS-6CWQ10FNPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V30100PW-M3/4W v30100pw.pdf
V30100PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 15A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 100 V
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V40100PGW-M3/4W V40100PGW.pdf
V40100PGW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V60200PGW-M3/4W V60200PGW.pdf
V60200PGW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 30A TO3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 30 A
Current - Reverse Leakage @ Vr: 210 µA @ 200 V
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V80100PW-M3/4W v80100pw.pdf
V80100PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO3PW
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VS-70CRU04PBF Rectifiers_Catalog.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 35A TO218
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 72 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-218
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 35 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-12TTS08PBF VS-12TTS08SPbF.pdf
VS-12TTS08PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
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VS-16TTS12FPPBF 16TTS_FPPbF_High_Voltage_Series.pdf
VS-16TTS12FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 16A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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VS-25TTS12FPPBF 25TTS_FPPbF_High_Voltage_Series.pdf
VS-25TTS12FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
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VS-10ETF02FPPBF 10ETF_FPPbF_Soft_Recovery_Series.pdf
VS-10ETF02FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF04FPPBF
VS-10ETF04FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF06FPPBF 10ETF_FPPbF_Soft_Recovery_Series.pdf
VS-10ETF06FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
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VS-10ETF10FPPBF VS-10ETF1...%28FPPbF%2CFP-M3%29.pdf
VS-10ETF10FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
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VS-10ETF12FPPBF VS-10ETF1...%28FPPbF%2CFP-M3%29.pdf
VS-10ETF12FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
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VS-10ETS08FPPBF VS-10ETS_FPPbF.pdf
VS-10ETS08FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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VS-10ETS12FPPBF VS-10ETS_FPPbF.pdf
VS-10ETS12FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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VS-30CPF02PBF 30EPF_30CPF0x.pdf
VS-30CPF02PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-30CPF06PBF 30EPF_30CPF0x.pdf
VS-30CPF06PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-30CPF12PBF 30EPF_30CPF.pdf
VS-30CPF12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-30EPF02PBF 30EPF_30CPF0x.pdf
VS-30EPF02PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-30EPF04PBF 30EPF_30CPF0x.pdf
VS-30EPF04PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-30EPF12PBF 30EPF_30CPF.pdf
VS-30EPF12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-40EPF10PBF
VS-40EPF10PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 40A TO247AC
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VS-40EPF12PBF
VS-40EPF12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 40
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-60EPF04PBF vs-60pf0-m3series.pdf
VS-60EPF04PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-60EPF10PBF
VS-60EPF10PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-80EPF02PBF 80EPF Series.pdf
VS-80EPF02PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-20ETF10FPPBF
VS-20ETF10FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220FP
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VS-20ETF12FPPBF
VS-20ETF12FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-70CRU02PBF 70CRU02PbF.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 35A TO218
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-218
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 35 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
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VS-16TTS08PBF VS-16TTS(PbF,M3).pdf
VS-16TTS08PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO220AB
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VS-16TTS12PBF VS-16TTS%28PbF%2CM3%29.pdf
VS-16TTS12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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VS-25TTS08PBF VS-25TTS..PbF%2CVS-25TTS..-M3%20Series.pdf
VS-25TTS08PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
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VS-20ETF12PBF vs-20etf08s-m3.pdf
VS-20ETF12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-20ETS08FPPBF VS-20ETS%28FPPbF%2CFP-M3%29.pdf
VS-20ETS08FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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VS-30CPF10PBF 30EPF_30CPF.pdf
VS-30CPF10PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-30CTH02FPPBF vs-30cth02fp.pdf
VS-30CTH02FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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VS-30EPF10PBF 30EPF_30CPF.pdf
VS-30EPF10PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VS-60APU06PBF
VS-60APU06PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-60EPF02PBF vs-60pf0-m3series.pdf
VS-60EPF02PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-16TTS08FPPBF 16TTS_FPPbF_High_Voltage_Series.pdf
VS-16TTS08FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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VS-25TTS08FPPBF 25TTS_FPPbF_High_Voltage_Series.pdf
VS-25TTS08FPPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 25A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
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VS-25TTS12PBF VS-25TTS..PbF%2CVS-25TTS..-M3%20Series.pdf
VS-25TTS12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-220-3
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
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VS-30TPS08PBF
VS-30TPS08PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
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VS-30TPS12PBF
VS-30TPS12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
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VS-40TPS08PBF
VS-40TPS08PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 800 V
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