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V40D100C-M3/I V40D100C-M3/I Vishay General Semiconductor - Diodes Division v40d100c.pdf Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V60D100C-M3/I V60D100C-M3/I Vishay General Semiconductor - Diodes Division v60d100c.pdf Description: DIODE ARRAY SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
на замовлення 6564 шт:
термін постачання 21-31 дні (днів)
1+327.08 грн
10+224.68 грн
100+186.20 грн
500+145.10 грн
1000+137.36 грн
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V10D120C-M3/I V10D120C-M3/I Vishay General Semiconductor - Diodes Division v10d120c.pdf Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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V60D120C-M3/I V60D120C-M3/I Vishay General Semiconductor - Diodes Division v60d120c.pdf Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2+313.59 грн
10+253.89 грн
100+205.34 грн
500+171.29 грн
1000+146.67 грн
Мінімальне замовлення: 2
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V20DM120C-M3/I V20DM120C-M3/I Vishay General Semiconductor - Diodes Division v20dm120c.pdf Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
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V30DM120C-M3/I V30DM120C-M3/I Vishay General Semiconductor - Diodes Division v30dm120c.pdf Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V40DM120C-M3/I V40DM120C-M3/I Vishay General Semiconductor - Diodes Division v40dm120c.pdf Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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G3SBA20-M3/45 G3SBA20-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20-M3/51 G3SBA20-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/45 G3SBA20L-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/51 G3SBA20L-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA60-M3/45 G3SBA60-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60-M3/51 G3SBA60-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/45 G3SBA60L-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/51 G3SBA60L-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA80-M3/45 G3SBA80-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G3SBA80-M3/51 G3SBA80-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G5SBA20-M3/45 G5SBA20-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20-M3/51 G5SBA20-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20L-M3/45 G5SBA20L-M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA60-M3/45 G5SBA60-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA60-M3/51 G5SBA60-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA60L-M3/45 G5SBA60L-M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA80-M3/45 G5SBA80-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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G5SBA80-M3/51 G5SBA80-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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GBU4A-M3/45 GBU4A-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU4A-M3/51 GBU4A-M3/51 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU8A-M3/45 GBU8A-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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GBU8A-M3/51 GBU8A-M3/51 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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1N6303A-E3/54 1N6303A-E3/54 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 171VWM 274VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)
7+50.02 грн
10+39.75 грн
100+27.42 грн
500+21.26 грн
Мінімальне замовлення: 7
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1N6384-E3/54 1N6384-E3/54 Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 12VWM 17.1VC 1.5KE
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
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1N4148WFL-G3-08 1N4148WFL-G3-08 Vishay General Semiconductor - Diodes Division 1N4148WFL-G.pdf Description: DIODE STD 75V 150MA SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WSFL-G3-08 1N4148WSFL-G3-08 Vishay General Semiconductor - Diodes Division 1N4148WSFL-G.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WFL-G3-08 1N4148WFL-G3-08 Vishay General Semiconductor - Diodes Division 1N4148WFL-G.pdf Description: DIODE STD 75V 150MA SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WSFL-G3-08 1N4148WSFL-G3-08 Vishay General Semiconductor - Diodes Division 1N4148WSFL-G.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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TPSMP13AHM3/84A TPSMP13AHM3/84A Vishay General Semiconductor - Diodes Division TPSMP6.8_TPSMP43A_July22_2016.pdf Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESH2PBHM3/85A ESH2PBHM3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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ESH2PB-M3/85A ESH2PB-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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ESH2PCHM3/85A ESH2PCHM3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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ESH2PC-M3/85A ESH2PC-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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ESH2PD-M3/85A ESH2PD-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PTV12B-M3/84A PTV12B-M3/84A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 12.8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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PTV12B-M3/85A PTV12B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 12.8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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PTV16B-M3/85A PTV16B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 17.3V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 17.3 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
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PTV18B-M3/84A PTV18B-M3/84A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 19.2V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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PTV18B-M3/85A PTV18B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 19.2V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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PTV7.5B-M3/85A PTV7.5B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 4 V
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PTV8.2B-M3/84A PTV8.2B-M3/84A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 8.8V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8.8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
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PTV8.2B-M3/85A PTV8.2B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 8.8V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8.8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
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PTV9.1B-M3/84A PTV9.1B-M3/84A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 9.7V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.7 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
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PTV9.1B-M3/85A PTV9.1B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 9.7V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.7 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
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RS1PBHM3/84A RS1PBHM3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PBHM3/85A RS1PBHM3/85A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PB-M3/84A RS1PB-M3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PB-M3/85A RS1PB-M3/85A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PDHM3/84A RS1PDHM3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 200V 1A DO220AA
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RS1PDHM3/85A RS1PDHM3/85A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 200V 1A DO220AA
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RS1PD-M3/85A RS1PD-M3/85A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 200V 1A DO220AA
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RS1PGHM3/84A RS1PGHM3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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RS1PG-M3/85A RS1PG-M3/85A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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V40D100C-M3/I v40d100c.pdf
V40D100C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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V60D100C-M3/I v60d100c.pdf
V60D100C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
на замовлення 6564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+327.08 грн
10+224.68 грн
100+186.20 грн
500+145.10 грн
1000+137.36 грн
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V10D120C-M3/I v10d120c.pdf
V10D120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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V60D120C-M3/I v60d120c.pdf
V60D120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.59 грн
10+253.89 грн
100+205.34 грн
500+171.29 грн
1000+146.67 грн
Мінімальне замовлення: 2
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V20DM120C-M3/I v20dm120c.pdf
V20DM120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
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V30DM120C-M3/I v30dm120c.pdf
V30DM120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V40DM120C-M3/I v40dm120c.pdf
V40DM120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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G3SBA20-M3/45 g3sba20.pdf
G3SBA20-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20-M3/51 g3sba20.pdf
G3SBA20-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/45 g3sba20.pdf
G3SBA20L-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/51 g3sba20.pdf
G3SBA20L-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA60-M3/45 g3sba20.pdf
G3SBA60-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60-M3/51 g3sba20.pdf
G3SBA60-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/45 g3sba20.pdf
G3SBA60L-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/51 g3sba20.pdf
G3SBA60L-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA80-M3/45 g3sba20.pdf
G3SBA80-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G3SBA80-M3/51 g3sba20.pdf
G3SBA80-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G5SBA20-M3/45 g5sba20.pdf
G5SBA20-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20-M3/51 g5sba20.pdf
G5SBA20-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20L-M3/45
G5SBA20L-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
товару немає в наявності
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G5SBA60-M3/45 g5sba20.pdf
G5SBA60-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA60-M3/51 g5sba20.pdf
G5SBA60-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA60L-M3/45
G5SBA60L-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA80-M3/45 g5sba20.pdf
G5SBA80-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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G5SBA80-M3/51 g5sba20.pdf
G5SBA80-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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GBU4A-M3/45 gbu4a.pdf
GBU4A-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU4A-M3/51 gbu4a.pdf
GBU4A-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU8A-M3/45 gbu8a.pdf
GBU8A-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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GBU8A-M3/51 gbu8a.pdf
GBU8A-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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1N6303A-E3/54 15ke.pdf
1N6303A-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.02 грн
10+39.75 грн
100+27.42 грн
500+21.26 грн
Мінімальне замовлення: 7
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1N6384-E3/54 icte.pdf
1N6384-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 17.1VC 1.5KE
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
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1N4148WFL-G3-08 1N4148WFL-G.pdf
1N4148WFL-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 150MA SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WSFL-G3-08 1N4148WSFL-G.pdf
1N4148WSFL-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WFL-G3-08 1N4148WFL-G.pdf
1N4148WFL-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 150MA SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N4148WSFL-G3-08 1N4148WSFL-G.pdf
1N4148WSFL-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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TPSMP13AHM3/84A TPSMP6.8_TPSMP43A_July22_2016.pdf
TPSMP13AHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESH2PBHM3/85A esh2pb.pdf
ESH2PBHM3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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ESH2PB-M3/85A esh2pb.pdf
ESH2PB-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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ESH2PCHM3/85A esh2pb.pdf
ESH2PCHM3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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ESH2PC-M3/85A esh2pb.pdf
ESH2PC-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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ESH2PD-M3/85A esh2pb.pdf
ESH2PD-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PTV12B-M3/84A ptvxxb.pdf
PTV12B-M3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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PTV12B-M3/85A ptvxxb.pdf
PTV12B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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PTV16B-M3/85A ptvxxb.pdf
PTV16B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17.3V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 17.3 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
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PTV18B-M3/84A ptvxxb.pdf
PTV18B-M3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.2V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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PTV18B-M3/85A ptvxxb.pdf
PTV18B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.2V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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PTV7.5B-M3/85A ptvxxb.pdf
PTV7.5B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 4 V
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PTV8.2B-M3/84A ptvxxb.pdf
PTV8.2B-M3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.8V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8.8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
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PTV8.2B-M3/85A ptvxxb.pdf
PTV8.2B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.8V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 8.8 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-220AA (SMP)
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
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PTV9.1B-M3/84A ptvxxb.pdf
PTV9.1B-M3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.7V 600MW DO220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.7 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
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PTV9.1B-M3/85A ptvxxb.pdf
PTV9.1B-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.7V 600MW DO220AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-220AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.7 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-220AA (SMP)
Part Status: Active
Power - Max: 600 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
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RS1PBHM3/84A rs1pb.pdf
RS1PBHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PBHM3/85A rs1pb.pdf
RS1PBHM3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PB-M3/84A rs1pb.pdf
RS1PB-M3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PB-M3/85A rs1pb.pdf
RS1PB-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
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RS1PDHM3/84A rs1pb.pdf
RS1PDHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
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RS1PDHM3/85A rs1pb.pdf
RS1PDHM3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
товару немає в наявності
В кошику  од. на суму  грн.
RS1PD-M3/85A rs1pb.pdf
RS1PD-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
товару немає в наявності
В кошику  од. на суму  грн.
RS1PGHM3/84A rs1pb.pdf
RS1PGHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
товару немає в наявності
В кошику  од. на суму  грн.
RS1PG-M3/85A rs1pb.pdf
RS1PG-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
товару немає в наявності
В кошику  од. на суму  грн.
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