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V4PAN50-M3/I V4PAN50-M3/I Vishay General Semiconductor - Diodes Division v4pan50.pdf Description: DIODE SCHOTTKY 50V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 µA @ 50 V
на замовлення 6522 шт:
термін постачання 21-31 дні (днів)
8+45.35 грн
11+30.89 грн
100+23.58 грн
500+16.93 грн
1000+14.82 грн
2000+13.85 грн
5000+12.39 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V8PAL45HM3/I V8PAL45HM3/I Vishay General Semiconductor - Diodes Division v8pal45.pdf Description: DIODE SCHOTTKY 45V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.85 mA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
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V4PAL45HM3/I V4PAL45HM3/I Vishay General Semiconductor - Diodes Division v4pal45.pdf Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
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V8PAL50-M3/I V8PAL50-M3/I Vishay General Semiconductor - Diodes Division v8pal50.pdf Description: DIODE SCHOTTKY 50V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
на замовлення 18740 шт:
термін постачання 21-31 дні (днів)
6+58.78 грн
10+42.21 грн
100+37.34 грн
500+27.31 грн
1000+24.40 грн
2000+22.98 грн
Мінімальне замовлення: 6
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SD103AWS-E3-08 SD103AWS-E3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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VS-209CNQ135PBF Vishay General Semiconductor - Diodes Division vs-209cnq150pbf.pdf Description: DIODE MOD SCHOTT 135V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 135 V
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3KASMC22AHM3_A/H 3KASMC22AHM3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC26AHM3_A/H 3KASMC26AHM3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ES1DHE3_A/H ES1DHE3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1800+6.01 грн
3600+5.73 грн
5400+5.68 грн
Мінімальне замовлення: 1800
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MURS340HE3_A/H MURS340HE3_A/H Vishay General Semiconductor - Diodes Division murs340.pdf Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
850+22.41 грн
1700+19.65 грн
2550+18.67 грн
Мінімальне замовлення: 850
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SL44HE3_A/H SL44HE3_A/H Vishay General Semiconductor - Diodes Division sl42.pdf Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
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SS16HE3_A/H SS16HE3_A/H Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SS16HE3_A/I SS16HE3_A/I Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SS26SHE3_A/H SS26SHE3_A/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SS36HE3_A/H SS36HE3_A/H Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SS3H10HE3_A/I SS3H10HE3_A/I Vishay General Semiconductor - Diodes Division SS3H9_H10_Dec18_2014.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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US1DHE3_A/H US1DHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+6.67 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
US1GHE3_A/H US1GHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+7.03 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
US1GHE3_A/I US1GHE3_A/I Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
7500+6.96 грн
15000+6.32 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
US1JHE3_A/H US1JHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+7.31 грн
3600+6.54 грн
5400+6.43 грн
Мінімальне замовлення: 1800
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US1MHE3_A/H US1MHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1800+6.59 грн
3600+6.32 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
3KASMC22AHM3_A/H 3KASMC22AHM3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
3KASMC26AHM3_A/H 3KASMC26AHM3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ES1DHE3_A/H ES1DHE3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11182 шт:
термін постачання 21-31 дні (днів)
13+27.71 грн
20+16.58 грн
100+14.34 грн
500+10.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MURS340HE3_A/H MURS340HE3_A/H Vishay General Semiconductor - Diodes Division murs340.pdf Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3370 шт:
термін постачання 21-31 дні (днів)
5+76.42 грн
10+46.09 грн
100+30.15 грн
Мінімальне замовлення: 5
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SL44HE3_A/H SL44HE3_A/H Vishay General Semiconductor - Diodes Division sl42.pdf Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
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SS26SHE3_A/H SS26SHE3_A/H Vishay General Semiconductor - Diodes Division ss26s.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SS3H10HE3_A/I SS3H10HE3_A/I Vishay General Semiconductor - Diodes Division SS3H9_H10_Dec18_2014.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SSA34HE3_A/H SSA34HE3_A/H Vishay General Semiconductor - Diodes Division ssa33l.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17567 шт:
термін постачання 21-31 дні (днів)
17+20.15 грн
38+8.57 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
US1DHE3_A/H US1DHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
12+29.39 грн
17+19.41 грн
100+12.91 грн
500+10.65 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
US1GHE3_A/H US1GHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2502 шт:
термін постачання 21-31 дні (днів)
19+18.48 грн
28+11.89 грн
100+11.13 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
US1GHE3_A/I US1GHE3_A/I Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40187 шт:
термін постачання 21-31 дні (днів)
12+30.23 грн
14+23.94 грн
100+15.55 грн
500+11.00 грн
1000+8.32 грн
2000+8.20 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
US1JHE3_A/H US1JHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6252 шт:
термін постачання 21-31 дні (днів)
11+31.07 грн
17+19.97 грн
100+14.32 грн
500+10.63 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
US1MHE3_A/H US1MHE3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8419 шт:
термін постачання 21-31 дні (днів)
13+26.03 грн
25+13.10 грн
500+11.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SSA34HE3_A/H SSA34HE3_A/H Vishay General Semiconductor - Diodes Division ssa33l.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16200 шт:
термін постачання 21-31 дні (днів)
1800+7.84 грн
3600+7.02 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
3KASMC24AHE3_A/H 3KASMC24AHE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC24AHE3_A/I 3KASMC24AHE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC26AHE3_A/H 3KASMC26AHE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC26AHE3_A/I 3KASMC26AHE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC26HE3_A/H 3KASMC26HE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 46.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 64.4A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC26HE3_A/I 3KASMC26HE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 26VWM 46.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 64.4A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC33AHE3_A/H 3KASMC33AHE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC33AHE3_A/I 3KASMC33AHE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC33HE3_A/H 3KASMC33HE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 33VWM 59VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC33HE3_A/I 3KASMC33HE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 33VWM 59VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC40AHE3_A/H 3KASMC40AHE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC40AHE3_A/I 3KASMC40AHE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC40HE3_A/H 3KASMC40HE3_A/H Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 40VWM 71.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
3KASMC40HE3_A/I 3KASMC40HE3_A/I Vishay General Semiconductor - Diodes Division 3KASMC10A-3KASMC43A.pdf Description: TVS DIODE 40VWM 71.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ES1AHE3_A/H ES1AHE3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1800+9.01 грн
3600+7.93 грн
5400+7.54 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
ES1AHE3_A/I ES1AHE3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ES1BHE3_A/H ES1BHE3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
1800+7.35 грн
3600+6.42 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
ES1CHE3_A/H ES1CHE3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
на замовлення 41400 шт:
термін постачання 21-31 дні (днів)
1800+7.21 грн
3600+6.34 грн
5400+6.25 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
ES1CHE3_A/I ES1CHE3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
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ES1DHE3_A/I ES1DHE3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+5.93 грн
15000+5.68 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
ES3AHE3_A/H ES3AHE3_A/H Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES3AHE3_A/I ES3AHE3_A/I Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES3BHE3_A/H ES3BHE3_A/H Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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ES3BHE3_A/I ES3BHE3_A/I Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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ES3CHE3_A/H ES3CHE3_A/H Vishay General Semiconductor - Diodes Division es3.pdf Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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V4PAN50-M3/I v4pan50.pdf
V4PAN50-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 µA @ 50 V
на замовлення 6522 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.35 грн
11+30.89 грн
100+23.58 грн
500+16.93 грн
1000+14.82 грн
2000+13.85 грн
5000+12.39 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V8PAL45HM3/I v8pal45.pdf
V8PAL45HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 4 A
Current - Reverse Leakage @ Vr: 1.85 mA @ 45 V
Qualification: AEC-Q101
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V4PAL45HM3/I v4pal45.pdf
V4PAL45HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Qualification: AEC-Q101
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V8PAL50-M3/I v8pal50.pdf
V8PAL50-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
на замовлення 18740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.78 грн
10+42.21 грн
100+37.34 грн
500+27.31 грн
1000+24.40 грн
2000+22.98 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SD103AWS-E3-08 sd103aws_sd103bws_sd103cws.pdf
SD103AWS-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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VS-209CNQ135PBF vs-209cnq150pbf.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 135V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 135 V
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3KASMC22AHM3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC22AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
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3KASMC26AHM3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC26AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES1DHE3_A/H es1.pdf
ES1DHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+6.01 грн
3600+5.73 грн
5400+5.68 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MURS340HE3_A/H murs340.pdf
MURS340HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+22.41 грн
1700+19.65 грн
2550+18.67 грн
Мінімальне замовлення: 850
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SL44HE3_A/H sl42.pdf
SL44HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SS16HE3_A/H ss12.pdf
SS16HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS16HE3_A/I ss12.pdf
SS16HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS26SHE3_A/H ss26s.pdf
SS26SHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS36HE3_A/H ss32.pdf
SS36HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS3H10HE3_A/I SS3H9_H10_Dec18_2014.pdf
SS3H10HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
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US1DHE3_A/H us1_test_dcicons.pdf
US1DHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+6.67 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
US1GHE3_A/H us1_test_dcicons.pdf
US1GHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.03 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
US1GHE3_A/I us1_test_dcicons.pdf
US1GHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+6.96 грн
15000+6.32 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
US1JHE3_A/H us1_test_dcicons.pdf
US1JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.31 грн
3600+6.54 грн
5400+6.43 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
US1MHE3_A/H us1_test_dcicons.pdf
US1MHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+6.59 грн
3600+6.32 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
3KASMC22AHM3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC22AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
3KASMC26AHM3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC26AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ES1DHE3_A/H es1.pdf
ES1DHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+27.71 грн
20+16.58 грн
100+14.34 грн
500+10.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MURS340HE3_A/H murs340.pdf
MURS340HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.42 грн
10+46.09 грн
100+30.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SL44HE3_A/H sl42.pdf
SL44HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
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SS26SHE3_A/H ss26s.pdf
SS26SHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS3H10HE3_A/I SS3H9_H10_Dec18_2014.pdf
SS3H10HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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SSA34HE3_A/H ssa33l.pdf
SSA34HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+20.15 грн
38+8.57 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
US1DHE3_A/H us1_test_dcicons.pdf
US1DHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.39 грн
17+19.41 грн
100+12.91 грн
500+10.65 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
US1GHE3_A/H us1_test_dcicons.pdf
US1GHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2502 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.48 грн
28+11.89 грн
100+11.13 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
US1GHE3_A/I us1_test_dcicons.pdf
US1GHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.23 грн
14+23.94 грн
100+15.55 грн
500+11.00 грн
1000+8.32 грн
2000+8.20 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
US1JHE3_A/H us1_test_dcicons.pdf
US1JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6252 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.07 грн
17+19.97 грн
100+14.32 грн
500+10.63 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
US1MHE3_A/H us1_test_dcicons.pdf
US1MHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8419 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.03 грн
25+13.10 грн
500+11.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SSA34HE3_A/H ssa33l.pdf
SSA34HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.84 грн
3600+7.02 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
3KASMC24AHE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC24AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC24AHE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC24AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC26AHE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC26AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC26AHE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC26AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC26HE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC26HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 46.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 64.4A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC26HE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC26HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 46.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 64.4A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC33AHE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC33AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC33AHE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC33AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC33HE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC33HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 59VC DO214AB
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3KASMC33HE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC33HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 59VC DO214AB
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3KASMC40AHE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC40AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC40AHE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC40AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC40HE3_A/H 3KASMC10A-3KASMC43A.pdf
3KASMC40HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 71.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3KASMC40HE3_A/I 3KASMC10A-3KASMC43A.pdf
3KASMC40HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 71.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES1AHE3_A/H es1.pdf
ES1AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+9.01 грн
3600+7.93 грн
5400+7.54 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
ES1AHE3_A/I es1.pdf
ES1AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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ES1BHE3_A/H es1.pdf
ES1BHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.35 грн
3600+6.42 грн
Мінімальне замовлення: 1800
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ES1CHE3_A/H es1.pdf
ES1CHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
на замовлення 41400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.21 грн
3600+6.34 грн
5400+6.25 грн
Мінімальне замовлення: 1800
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ES1CHE3_A/I es1.pdf
ES1CHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
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ES1DHE3_A/I es1.pdf
ES1DHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+5.93 грн
15000+5.68 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
ES3AHE3_A/H es3.pdf
ES3AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES3AHE3_A/I es3.pdf
ES3AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES3BHE3_A/H es3.pdf
ES3BHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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ES3BHE3_A/I es3.pdf
ES3BHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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ES3CHE3_A/H es3.pdf
ES3CHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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