Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41228) > Сторінка 203 з 688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TPSMP36HM3/84A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 29.1VWM 52VC DO220AAQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 52V Voltage - Breakdown (Min): 32.4V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 29.1V Current - Peak Pulse (10/1000µs): 7.7A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPSMP7.5AHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO220AAVoltage - Breakdown (Min): 7.13V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 6.4V Current - Peak Pulse (10/1000µs): 26.5A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 11.3V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPSMP7.5AHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO220AAOperating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) Voltage - Breakdown (Min): 7.13V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 6.4V Current - Peak Pulse (10/1000µs): 26.5A Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 11.3V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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TPSMP9.1HM3/84A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.37VWM 13.8V DO220AAQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 13.8V Voltage - Breakdown (Min): 8.19V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 7.37V Current - Peak Pulse (10/1000µs): 21.7A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPSMP9.1HM3/85A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.37VWM 13.8V DO220AAQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 13.8V Voltage - Breakdown (Min): 8.19V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 7.37V Current - Peak Pulse (10/1000µs): 21.7A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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B120-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
на замовлення 6870 шт: термін постачання 21-31 дні (днів) |
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B130-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO214ACVoltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 16156 шт: термін постачання 21-31 дні (днів) |
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BYG22D-E3/TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 8131 шт: термін постачання 21-31 дні (днів) |
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BYM10-100-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 1A DO213ABCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Technology: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 11972 шт: термін постачання 21-31 дні (днів) |
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BYM11-600-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO213ABCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 7744 шт: термін постачання 21-31 дні (днів) |
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BYS12-90-E3/TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1.5A DO214ACSupplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C |
на замовлення 15138 шт: термін постачання 21-31 дні (днів) |
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| ES1A-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 155°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 7416 шт: термін постачання 21-31 дні (днів) |
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ES2F-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 300V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 9157 шт: термін постачання 21-31 дні (днів) |
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FESB16JT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 145pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1241 шт: термін постачання 21-31 дні (днів) |
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MBRB760-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 7.5A TO263ABCurrent - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 7.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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MPG06M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A MPG06Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 600 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: MPG06, Axial Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR420-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 4A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 |
на замовлення 2234 шт: термін постачання 21-31 дні (днів) |
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RS1A-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 9521 шт: термін постачання 21-31 дні (днів) |
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RS1G-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214ACPackage / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
на замовлення 16099 шт: термін постачання 21-31 дні (днів) |
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RS3J-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 34pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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S5M-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 5A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB130-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO204ALCurrent - Reverse Leakage @ Vr: 500 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
на замовлення 7192 шт: термін постачання 21-31 дні (днів) |
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SB240S-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 64964 шт: термін постачання 21-31 дні (днів) |
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SRP100K-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRP600A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 6A P600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS1H10-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 4933 шт: термін постачання 21-31 дні (днів) |
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SS25S-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 50 V |
на замовлення 25216 шт: термін постачання 21-31 дні (днів) |
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SS26-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 18278 шт: термін постачання 21-31 дні (днів) |
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SS8PH9-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 90 V |
на замовлення 10708 шт: термін постачання 21-31 дні (днів) |
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SSA23L-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 17322 шт: термін постачання 21-31 дні (днів) |
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SSB44-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
на замовлення 5449 шт: термін постачання 21-31 дні (днів) |
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UG1D-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 6304 шт: термін постачання 21-31 дні (днів) |
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V12P10-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
на замовлення 4458 шт: термін постачання 21-31 дні (днів) |
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VB20150S-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 20A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VB20200G-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 200V 10A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 200 V |
на замовлення 11620 шт: термін постачання 21-31 дні (днів) |
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VS-12CWQ04FNTRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-30WQ04FNTRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3.5A DPAKCurrent - Reverse Leakage @ Vr: 2 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-252AA (DPAK) Current - Average Rectified (Io): 3.5A Capacitance @ Vr, F: 189pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-32CTQ030STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 15A TO263ABCurrent - Reverse Leakage @ Vr: 1.75 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-40CTQ045STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 20A TO263ABCurrent - Reverse Leakage @ Vr: 3 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-48CTQ060STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 20A TO263ABCurrent - Reverse Leakage @ Vr: 2 mA @ 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-6CWQ03FNTRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA04SD60STRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 4A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MBRS190TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B360B-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 60 Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 2269 шт: термін постачання 21-31 дні (днів) |
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BYM07-300-E3/98 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 300V 500MA DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 7227 шт: термін постачання 21-31 дні (днів) |
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ES1DHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES1D-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 26358 шт: термін постачання 21-31 дні (днів) |
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ES1PB-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
на замовлення 5411 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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ES2C-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 6472 шт: термін постачання 21-31 дні (днів) |
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ES3A-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 3618 шт: термін постачання 21-31 дні (днів) |
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MSE1PD-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ADCurrent - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Cut Tape (CT) |
на замовлення 6033 шт: термін постачання 21-31 дні (днів) |
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S1JHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214ACCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SE15PJ-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO220AA |
на замовлення 6003 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SS12P3L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 12A TO277ACurrent - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 930pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 1359 шт: термін постачання 21-31 дні (днів) |
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SS29-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1.5A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 90 V |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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SS2H10HE3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO214AACurrent - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS5P6HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277ACurrent - Reverse Leakage @ Vr: 150 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS8P4C-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 40V 4A TO277AVoltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io) (per Diode): 4A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 300 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A |
на замовлення 3278 шт: термін постачання 21-31 дні (днів) |
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SS8PH9-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 8A TO277A |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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V8P10HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277ACurrent - Reverse Leakage @ Vr: 70 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TPSMP36HM3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 29.1VWM 52VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 52V
Voltage - Breakdown (Min): 32.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 29.1V
Current - Peak Pulse (10/1000µs): 7.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 29.1VWM 52VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 52V
Voltage - Breakdown (Min): 32.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 29.1V
Current - Peak Pulse (10/1000µs): 7.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPSMP7.5AHM3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO220AA
Voltage - Breakdown (Min): 7.13V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 26.5A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11.3V
Description: TVS DIODE 6.4VWM 11.3VC DO220AA
Voltage - Breakdown (Min): 7.13V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 26.5A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11.3V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPSMP7.5AHM3/85A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO220AA
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 7.13V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 26.5A
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11.3V
Description: TVS DIODE 6.4VWM 11.3VC DO220AA
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 7.13V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 26.5A
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11.3V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TPSMP9.1HM3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.37VWM 13.8V DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 13.8V
Voltage - Breakdown (Min): 8.19V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 7.37V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 7.37VWM 13.8V DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 13.8V
Voltage - Breakdown (Min): 8.19V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 7.37V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPSMP9.1HM3/85A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.37VWM 13.8V DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 13.8V
Voltage - Breakdown (Min): 8.19V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 7.37V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 7.37VWM 13.8V DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 13.8V
Voltage - Breakdown (Min): 8.19V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 7.37V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| B120-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 14+ | 21.50 грн |
| 100+ | 12.18 грн |
| 500+ | 7.57 грн |
| 1000+ | 5.80 грн |
| 2000+ | 5.04 грн |
| B130-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 16156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 14+ | 21.50 грн |
| 100+ | 12.18 грн |
| 500+ | 7.57 грн |
| 1000+ | 5.80 грн |
| 2000+ | 5.04 грн |
| BYG22D-E3/TR3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 8131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.09 грн |
| 30+ | 10.01 грн |
| BYM10-100-E3/97 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 11972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.94 грн |
| 17+ | 17.72 грн |
| 100+ | 10.99 грн |
| 500+ | 9.01 грн |
| 1000+ | 8.07 грн |
| 2000+ | 7.99 грн |
| BYM11-600-E3/97 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 7744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.25 грн |
| 14+ | 22.24 грн |
| 100+ | 13.33 грн |
| 500+ | 11.58 грн |
| 1000+ | 7.88 грн |
| 2000+ | 7.25 грн |
| BYS12-90-E3/TR3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
на замовлення 15138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.70 грн |
| 30+ | 10.15 грн |
| 100+ | 8.18 грн |
| 500+ | 6.52 грн |
| 1000+ | 6.40 грн |
| ES1A-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 155°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 155°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7416 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.78 грн |
| 23+ | 13.05 грн |
| 100+ | 11.43 грн |
| 500+ | 8.01 грн |
| 1000+ | 6.07 грн |
| 2000+ | 5.25 грн |
| ES2F-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 9157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.11 грн |
| 10+ | 31.72 грн |
| 100+ | 20.47 грн |
| 500+ | 14.63 грн |
| 1000+ | 13.16 грн |
| FESB16JT-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.62 грн |
| 10+ | 97.25 грн |
| 100+ | 77.44 грн |
| MBRB760-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.44 грн |
| 10+ | 73.68 грн |
| MPG06M-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MUR420-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
на замовлення 2234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.06 грн |
| 10+ | 60.63 грн |
| 100+ | 40.26 грн |
| 500+ | 29.55 грн |
| RS1A-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 9521 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.47 грн |
| 28+ | 10.97 грн |
| 100+ | 8.90 грн |
| 500+ | 6.81 грн |
| RS1G-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE STANDARD 400V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 16099 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.93 грн |
| 72+ | 4.15 грн |
| RS3J-E3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.11 грн |
| 10+ | 33.65 грн |
| 100+ | 26.65 грн |
| 500+ | 19.22 грн |
| 1000+ | 17.36 грн |
| S5M-E3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1000V 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SB130-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
на замовлення 7192 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.56 грн |
| 16+ | 18.75 грн |
| 100+ | 11.88 грн |
| 500+ | 8.32 грн |
| 1000+ | 7.41 грн |
| 2000+ | 6.64 грн |
| SB240S-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 64964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.87 грн |
| 12+ | 26.09 грн |
| 100+ | 16.66 грн |
| 500+ | 11.82 грн |
| 1000+ | 10.59 грн |
| 2000+ | 9.56 грн |
| SRP100K-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| SRP600A-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Description: DIODE GEN PURP 50V 6A P600
товару немає в наявності
В кошику
од. на суму грн.
| SS1H10-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 4933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.26 грн |
| 13+ | 23.64 грн |
| 100+ | 15.05 грн |
| 500+ | 10.63 грн |
| 1000+ | 9.51 грн |
| 2000+ | 8.56 грн |
| SS25S-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Description: DIODE SCHOTTKY 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 25216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.55 грн |
| 22+ | 13.49 грн |
| 100+ | 10.95 грн |
| 500+ | 7.68 грн |
| 1000+ | 5.33 грн |
| 2000+ | 4.73 грн |
| SS26-E3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 18278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.03 грн |
| 10+ | 29.95 грн |
| 100+ | 19.23 грн |
| 500+ | 13.70 грн |
| 1000+ | 12.30 грн |
| SS8PH9-M3/87A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 90 V
Description: DIODE SCHOTTKY 90V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 90 V
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.80 грн |
| 10+ | 32.84 грн |
| 100+ | 22.49 грн |
| 500+ | 16.67 грн |
| 1000+ | 15.21 грн |
| 2000+ | 13.97 грн |
| SSA23L-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 17322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.25 грн |
| 14+ | 21.79 грн |
| 100+ | 13.05 грн |
| 500+ | 11.34 грн |
| 1000+ | 7.71 грн |
| 2000+ | 7.10 грн |
| SSB44-E3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 5449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.25 грн |
| 16+ | 19.05 грн |
| 100+ | 16.48 грн |
| 500+ | 12.58 грн |
| 1000+ | 11.31 грн |
| UG1D-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 6304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.40 грн |
| 19+ | 16.38 грн |
| 100+ | 13.00 грн |
| 500+ | 9.17 грн |
| 1000+ | 7.95 грн |
| 2000+ | 7.36 грн |
| V12P10-M3/87A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
на замовлення 4458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.53 грн |
| 10+ | 60.04 грн |
| 100+ | 39.80 грн |
| 500+ | 29.20 грн |
| 1000+ | 26.57 грн |
| 2000+ | 24.36 грн |
| VB20150S-E3/8W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO263AB
Description: DIODE SCHOTTKY 150V 20A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| VB20200G-E3/8W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 11620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.70 грн |
| 10+ | 88.35 грн |
| 100+ | 70.77 грн |
| VS-12CWQ04FNTRPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-30WQ04FNTRPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| VS-32CTQ030STRLPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| VS-40CTQ045STRLPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| VS-48CTQ060STRLPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| VS-6CWQ03FNTRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V DPAK
Description: DIODE ARRAY SCHOTTKY 30V DPAK
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| VS-HFA04SD60STRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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| VS-MBRS190TRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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| B360B-E3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 2269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.95 грн |
| 11+ | 28.09 грн |
| 100+ | 18.03 грн |
| BYM07-300-E3/98 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 300V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE STD 300V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 7227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.72 грн |
| 13+ | 23.72 грн |
| 100+ | 17.69 грн |
| 500+ | 12.81 грн |
| 1000+ | 11.48 грн |
| ES1DHE3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
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| ES1D-M3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 26358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.64 грн |
| 12+ | 26.61 грн |
| 100+ | 17.01 грн |
| 500+ | 12.07 грн |
| ES1PB-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
на замовлення 5411 шт:
термін постачання 21-31 дні (днів)
| ES2C-E3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 6472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.11 грн |
| 10+ | 31.50 грн |
| 100+ | 20.30 грн |
| ES3A-E3/57T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 50V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 3618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.95 грн |
| 12+ | 26.61 грн |
| 100+ | 23.38 грн |
| MSE1PD-M3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AD
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 1A DO219AD
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
на замовлення 6033 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.32 грн |
| 42+ | 7.12 грн |
| 100+ | 6.80 грн |
| 500+ | 4.70 грн |
| 1000+ | 3.46 грн |
| S1JHE3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| SE15PJ-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO220AA
Description: DIODE GEN PURP 600V 1.5A DO220AA
на замовлення 6003 шт:
термін постачання 21-31 дні (днів)
| SS12P3L-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 12A TO277A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 930pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 12A TO277A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 930pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.43 грн |
| 10+ | 51.29 грн |
| 100+ | 39.89 грн |
| 500+ | 31.73 грн |
| SS29-E3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 90 V
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 33.87 грн |
| 100+ | 21.83 грн |
| SS2H10HE3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
товару немає в наявності
В кошику
од. на суму грн.
| SS5P6HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 5A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SS8P4C-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 4A TO277A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A
Description: DIODE ARRAY SCHOTT 40V 4A TO277A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A
на замовлення 3278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.80 грн |
| 10+ | 32.24 грн |
| 100+ | 24.67 грн |
| 500+ | 17.80 грн |
| SS8PH9-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 8A TO277A
Description: DIODE SCHOTTKY 90V 8A TO277A
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| V8P10HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.


























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