Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40576) > Сторінка 260 з 677

Обрати Сторінку:   [  << Попередня Сторінка ]  1 67 134 201 255 256 257 258 259 260 261 262 263 264 265 268 335 402 469 536 603 670 677  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BAV23C-E3-08 BAV23C-E3-08 Vishay General Semiconductor - Diodes Division bav23c.pdf Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+4.03 грн
6000+3.48 грн
9000+3.28 грн
15000+2.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAV23C-G3-08 BAV23C-G3-08 Vishay General Semiconductor - Diodes Division doc?98732 Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BAV23C-HE3-08 BAV23C-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAV301-TR BAV301-TR Vishay General Semiconductor - Diodes Division bav300.pdf Description: DIODE STD 100V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+3.17 грн
5000+2.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV302-TR BAV302-TR Vishay General Semiconductor - Diodes Division bav300.pdf Description: DIODE GP 150V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+3.09 грн
5000+2.69 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV303-TR BAV303-TR Vishay General Semiconductor - Diodes Division bav300.pdf Description: DIODE STD 200V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+3.61 грн
5000+3.11 грн
7500+2.92 грн
12500+2.41 грн
17500+2.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV99-G3-08 BAV99-G3-08 Vishay General Semiconductor - Diodes Division bav99-g.pdf Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+3.79 грн
6000+3.28 грн
9000+3.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAV99-HE3-08 BAV99-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAW56-HE3-08 BAW56-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 mA @ 70 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BYG10D-M3/TR BYG10D-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10G-M3/TR BYG10G-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10J-M3/TR BYG10J-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10K-M3/TR BYG10K-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10M-M3/TR BYG10M-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10Y-M3/TR BYG10Y-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20D-M3/TR BYG20D-M3/TR Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20G-M3/TR BYG20G-M3/TR Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20J-M3/TR BYG20J-M3/TR Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG21K-M3/TR BYG21K-M3/TR Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG22A-M3/TR BYG22A-M3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG22B-M3/TR BYG22B-M3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG23M-M3/TR BYG23M-M3/TR Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-25-M3/TR BYS10-25-M3/TR Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-35-M3/TR BYS10-35-M3/TR Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-45-M3/TR BYS10-45-M3/TR Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS11-90-M3/TR BYS11-90-M3/TR Vishay General Semiconductor - Diodes Division bys11-90.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
1800+6.21 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
BYS12-90-M3/TR BYS12-90-M3/TR Vishay General Semiconductor - Diodes Division bys12-90-m3.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+5.35 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
BZD17C100P-E3-08 BZD17C100P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C110P-E3-08 BZD17C110P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C11P-E3-08 BZD17C11P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C130P-E3-08 BZD17C130P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C13P-E3-08 BZD17C13P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C15P-E3-08 BZD17C15P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+7.22 грн
6000+6.30 грн
9000+5.97 грн
15000+4.66 грн
21000+4.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD17C18P-E3-08 BZD17C18P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 18V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C24P-E3-08 BZD17C24P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 24V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C47P-E3-08 BZD17C47P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C4V7P-E3-08 BZD17C4V7P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C51P-E3-08 BZD17C51P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 51V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C100P-E3-08 BZD27C100P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.95 грн
6000+6.06 грн
9000+5.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C100P-M-08 BZD27C100P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C100P-M3-08 BZD27C100P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C10P-E3-08 BZD27C10P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+7.24 грн
6000+6.31 грн
9000+5.98 грн
15000+5.26 грн
21000+4.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C10P-M-08 BZD27C10P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C11P-E3-08 BZD27C11P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+10.70 грн
6000+9.88 грн
9000+8.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C11P-HE3-08 BZD27C11P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C120P-M-08 BZD27C120P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 120V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C120P-M3-08 BZD27C120P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 120V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C12P-E3-08 BZD27C12P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
на замовлення 13575 шт:
термін постачання 21-31 дні (днів)
3000+6.22 грн
6000+5.42 грн
9000+5.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C12P-M-08 BZD27C12P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C13P-M-08 BZD27C13P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C13P-M3-08 BZD27C13P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C150P-E3-08 BZD27C150P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+7.00 грн
6000+6.12 грн
9000+5.80 грн
15000+5.10 грн
21000+4.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C150P-M-08 BZD27C150P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C150P-M3-08 BZD27C150P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C15P-HE3-08 BZD27C15P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+12.25 грн
6000+10.78 грн
9000+10.27 грн
15000+9.09 грн
21000+8.77 грн
30000+8.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C15P-M-08 BZD27C15P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C160P-M-08 BZD27C160P-M-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C160P-M3-08 BZD27C160P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C16P-E3-08 BZD27C16P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C16P-HE3-08 BZD27C16P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+9.80 грн
6000+8.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAV23C-E3-08 bav23c.pdf
BAV23C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.03 грн
6000+3.48 грн
9000+3.28 грн
15000+2.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAV23C-G3-08 doc?98732
BAV23C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BAV23C-HE3-08
BAV23C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAV301-TR bav300.pdf
BAV301-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.17 грн
5000+2.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV302-TR bav300.pdf
BAV302-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.09 грн
5000+2.69 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV303-TR bav300.pdf
BAV303-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.61 грн
5000+3.11 грн
7500+2.92 грн
12500+2.41 грн
17500+2.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAV99-G3-08 bav99-g.pdf
BAV99-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.79 грн
6000+3.28 грн
9000+3.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAV99-HE3-08
BAV99-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAW56-HE3-08
BAW56-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 mA @ 70 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BYG10D-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10D-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10G-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10G-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10J-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10J-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10K-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10K-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10M-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10M-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG10Y-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10Y-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20D-M3/TR byg20d.pdf
BYG20D-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20G-M3/TR byg20d.pdf
BYG20G-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG20J-M3/TR byg20d.pdf
BYG20J-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG21K-M3/TR byg21k.pdf
BYG21K-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG22A-M3/TR byg22a.pdf
BYG22A-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG22B-M3/TR byg22a.pdf
BYG22B-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BYG23M-M3/TR byg23m.pdf
BYG23M-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-25-M3/TR bys10.pdf
BYS10-25-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-35-M3/TR bys10.pdf
BYS10-35-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS10-45-M3/TR bys10.pdf
BYS10-45-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику  од. на суму  грн.
BYS11-90-M3/TR bys11-90.pdf
BYS11-90-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+6.21 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
BYS12-90-M3/TR bys12-90-m3.pdf
BYS12-90-M3/TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+5.35 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
BZD17C100P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C100P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C110P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C110P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C11P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C11P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C130P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C130P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C13P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C13P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C15P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C15P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.22 грн
6000+6.30 грн
9000+5.97 грн
15000+4.66 грн
21000+4.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD17C18P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C18P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C24P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C24P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C47P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C47P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C4V7P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C4V7P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD17C51P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C51P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C100P-E3-08 bzd27series.pdf
BZD27C100P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.95 грн
6000+6.06 грн
9000+5.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C100P-M-08 BZD27-M_Series.pdf
BZD27C100P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C100P-M3-08 BZD27-M_Series.pdf
BZD27C100P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C10P-E3-08 bzd27series.pdf
BZD27C10P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.24 грн
6000+6.31 грн
9000+5.98 грн
15000+5.26 грн
21000+4.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C10P-M-08 BZD27-M_Series.pdf
BZD27C10P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C11P-E3-08 bzd27series.pdf
BZD27C11P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.70 грн
6000+9.88 грн
9000+8.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C11P-HE3-08 bzd27series.pdf
BZD27C11P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C120P-M-08 BZD27-M_Series.pdf
BZD27C120P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C120P-M3-08 BZD27-M_Series.pdf
BZD27C120P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 800MW DO219AB
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C12P-E3-08 bzd27series.pdf
BZD27C12P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
на замовлення 13575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.22 грн
6000+5.42 грн
9000+5.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C12P-M-08 BZD27-M_Series.pdf
BZD27C12P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C13P-M-08 BZD27-M_Series.pdf
BZD27C13P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C13P-M3-08 BZD27-M_Series.pdf
BZD27C13P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C150P-E3-08 bzd27series.pdf
BZD27C150P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.00 грн
6000+6.12 грн
9000+5.80 грн
15000+5.10 грн
21000+4.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C150P-M-08 BZD27-M_Series.pdf
BZD27C150P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C150P-M3-08 BZD27-M_Series.pdf
BZD27C150P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C15P-HE3-08 bzd27series.pdf
BZD27C15P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.25 грн
6000+10.78 грн
9000+10.27 грн
15000+9.09 грн
21000+8.77 грн
30000+8.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C15P-M-08 BZD27-M_Series.pdf
BZD27C15P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C160P-M-08 BZD27-M_Series.pdf
BZD27C160P-M-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C160P-M3-08 BZD27-M_Series.pdf
BZD27C160P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C16P-E3-08 bzd27series.pdf
BZD27C16P-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C16P-HE3-08 bzd27series.pdf
BZD27C16P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.80 грн
6000+8.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 67 134 201 255 256 257 258 259 260 261 262 263 264 265 268 335 402 469 536 603 670 677  [ Наступна Сторінка >> ]