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KBP04M-M4/51 KBP04M-M4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M, 3N246_thru_52.pdf Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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KBP06M-M4/51 KBP06M-M4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBP08M-M4/51 KBP08M-M4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBP10M-M4/51 KBP10M-M4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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BU1006A5S-M3/45 BU1006A5S-M3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 10A BU-5S
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BU1006A-M3/45 BU1006A-M3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
2+204.97 грн
20+165.45 грн
100+133.85 грн
500+111.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU10105S-M3/45 BU10105S-M3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 10A BU-5S
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BU1010A5S-M3/45 BU1010A5S-M3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 10A BU-5S
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BU12065S-M3/45 BU12065S-M3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 12A BU-5S
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BU12085S-M3/45 BU12085S-M3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 12A BU-5S
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BU15085S-M3/45 BU15085S-M3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 15A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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BU1508-M3/45 BU1508-M3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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BU20085S-M3/45 BU20085S-M3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 20A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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BU2008-M3/45 BU2008-M3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 800V 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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BU20105S-M3/45 BU20105S-M3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 20A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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BU2010-M3/45 BU2010-M3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 1KV 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
2+318.47 грн
20+181.29 грн
100+143.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU25065S-M3/45 BU25065S-M3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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BU2506-M3/45 BU2506-M3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
2+321.74 грн
20+182.16 грн
100+143.92 грн
500+111.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU25085S-M3/45 BU25085S-M3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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BU2508-M3/45 BU2508-M3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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FEPE16DT-E3/45 FEPE16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220AB
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G2SB60-M3/45 G2SB60-M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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G2SBA60-M3/45 Vishay General Semiconductor - Diodes Division g2sb20.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBL01-M3/45 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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GBL02-M3/45 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBL06-M3/45 GBL06-M3/45 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBL08-M3/45 GBL08-M3/45 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBL10-M3/45 GBL10-M3/45 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU4B-M3/45 GBU4B-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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GBU4D-M3/45 GBU4D-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBU4G-M3/45 GBU4G-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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GBU4J-M3/45 GBU4J-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBU4K-M3/45 GBU4K-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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GBU4M-M3/45 GBU4M-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU6B-M3/45 GBU6B-M3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 100V 6A GBU
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GBU6G-M3/45 GBU6G-M3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBU
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GBU6J-M3/45 GBU6J-M3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU6K-M3/45 GBU6K-M3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU6M-M3/45 GBU6M-M3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU8D-M3/45 GBU8D-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU8G-M3/45 GBU8G-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
товару немає в наявності
В кошику  од. на суму  грн.
GBU8J-M3/45 GBU8J-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU8M-M3/45 GBU8M-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB1520N-M3/45 GSIB1520N-M3/45 Vishay General Semiconductor - Diodes Division gsib1520n.pdf Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB1540N-M3/45 GSIB1540N-M3/45 Vishay General Semiconductor - Diodes Division gsib1520n.pdf Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB1560N-M3/45 GSIB1560N-M3/45 Vishay General Semiconductor - Diodes Division gsib1520n.pdf Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB1580N-M3/45 GSIB1580N-M3/45 Vishay General Semiconductor - Diodes Division gsib1520n.pdf Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
3+146.17 грн
20+117.17 грн
100+93.25 грн
500+79.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GSIB15A20N-M3/45 GSIB15A20N-M3/45 Vishay General Semiconductor - Diodes Division gsib15a20n.pdf Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB15A40N-M3/45 GSIB15A40N-M3/45 Vishay General Semiconductor - Diodes Division gsib15a20n.pdf Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB15A60N-M3/45 GSIB15A60N-M3/45 Vishay General Semiconductor - Diodes Division gsib15a20n.pdf Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB15A80N-M3/45 GSIB15A80N-M3/45 Vishay General Semiconductor - Diodes Division gsib15a20n.pdf Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2020N-M3/45 GSIB2020N-M3/45 Vishay General Semiconductor - Diodes Division gsib2020n.pdf Description: BRIDGE RECT 1P 200V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2040N-M3/45 GSIB2040N-M3/45 Vishay General Semiconductor - Diodes Division gsib2020n.pdf Description: BRIDGE RECT 1P 400V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2060N-M3/45 GSIB2060N-M3/45 Vishay General Semiconductor - Diodes Division gsib2020n.pdf Description: BRIDGE RECT 1P 600V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2080N-M3/45 GSIB2080N-M3/45 Vishay General Semiconductor - Diodes Division gsib2020n.pdf Description: BRIDGE RECT 1P 800V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2520N-M3/45 GSIB2520N-M3/45 Vishay General Semiconductor - Diodes Division gsib2520n.pdf Description: BRIDGE RECT 1P 200V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2540N-M3/45 GSIB2540N-M3/45 Vishay General Semiconductor - Diodes Division gsib2520n.pdf Description: BRIDGE RECT 1P 400V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2560N-M3/45 GSIB2560N-M3/45 Vishay General Semiconductor - Diodes Division gsib2520n.pdf Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB2580N-M3/45 GSIB2580N-M3/45 Vishay General Semiconductor - Diodes Division gsib2520n.pdf Description: BRIDGE RECT 1P 800V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
GSIB620N-M3/45 GSIB620N-M3/45 Vishay General Semiconductor - Diodes Division gsib620n.pdf Description: BRIDGE RECT 1P 200V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP04M-M4/51 KBP005M_thru_10M, 3N246_thru_52.pdf
KBP04M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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KBP06M-M4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP06M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP08M-M4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP08M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP10M-M4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP10M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BU1006A5S-M3/45 bu1006a.pdf
BU1006A5S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 10A BU-5S
товару немає в наявності
В кошику  од. на суму  грн.
BU1006A-M3/45 bu1006a.pdf
BU1006A-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.97 грн
20+165.45 грн
100+133.85 грн
500+111.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU10105S-M3/45 bu1006.pdf
BU10105S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 10A BU-5S
товару немає в наявності
В кошику  од. на суму  грн.
BU1010A5S-M3/45 bu1006a.pdf
BU1010A5S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 10A BU-5S
товару немає в наявності
В кошику  од. на суму  грн.
BU12065S-M3/45 bu1206.pdf
BU12065S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 12A BU-5S
товару немає в наявності
В кошику  од. на суму  грн.
BU12085S-M3/45 bu1206.pdf
BU12085S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 12A BU-5S
товару немає в наявності
В кошику  од. на суму  грн.
BU15085S-M3/45 bu1506.pdf
BU15085S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BU1508-M3/45 bu1506.pdf
BU1508-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BU20085S-M3/45 bu2006.pdf
BU20085S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BU2008-M3/45 bu2006.pdf
BU2008-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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BU20105S-M3/45 bu2006.pdf
BU20105S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 20A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BU2010-M3/45 bu2006.pdf
BU2010-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+318.47 грн
20+181.29 грн
100+143.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU25065S-M3/45 bu2506.pdf
BU25065S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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BU2506-M3/45 bu2506.pdf
BU2506-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+321.74 грн
20+182.16 грн
100+143.92 грн
500+111.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BU25085S-M3/45 bu2506.pdf
BU25085S-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BU2508-M3/45 bu2506.pdf
BU2508-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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FEPE16DT-E3/45 fep16jt.pdf
FEPE16DT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220AB
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G2SB60-M3/45
G2SB60-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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G2SBA60-M3/45 g2sb20.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBL01-M3/45 gbl005.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
GBL02-M3/45 gbl005.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBL06-M3/45 gbl005.pdf
GBL06-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBL08-M3/45 gbl005.pdf
GBL08-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
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GBL10-M3/45 gbl005.pdf
GBL10-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU4B-M3/45 gbu4a.pdf
GBU4B-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU4D-M3/45 gbu4a.pdf
GBU4D-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBU4G-M3/45 gbu4a.pdf
GBU4G-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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GBU4J-M3/45 gbu4a.pdf
GBU4J-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBU4K-M3/45 gbu4a.pdf
GBU4K-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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GBU4M-M3/45 gbu4a.pdf
GBU4M-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU6B-M3/45 gbu6a.pdf
GBU6B-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 6A GBU
товару немає в наявності
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GBU6G-M3/45 gbu6a.pdf
GBU6G-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 6A GBU
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GBU6J-M3/45 gbu6a.pdf
GBU6J-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBU6K-M3/45 gbu6a.pdf
GBU6K-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU6M-M3/45 gbu6a.pdf
GBU6M-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU8D-M3/45 gbu8a.pdf
GBU8D-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBU8G-M3/45 gbu8a.pdf
GBU8G-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 8A GBU
товару немає в наявності
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GBU8J-M3/45 gbu8a.pdf
GBU8J-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBU8M-M3/45 gbu8a.pdf
GBU8M-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GSIB1520N-M3/45 gsib1520n.pdf
GSIB1520N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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GSIB1540N-M3/45 gsib1520n.pdf
GSIB1540N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
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GSIB1560N-M3/45 gsib1520n.pdf
GSIB1560N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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GSIB1580N-M3/45 gsib1520n.pdf
GSIB1580N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.17 грн
20+117.17 грн
100+93.25 грн
500+79.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GSIB15A20N-M3/45 gsib15a20n.pdf
GSIB15A20N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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GSIB15A40N-M3/45 gsib15a20n.pdf
GSIB15A40N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GSIB15A60N-M3/45 gsib15a20n.pdf
GSIB15A60N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GSIB15A80N-M3/45 gsib15a20n.pdf
GSIB15A80N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GSIB2020N-M3/45 gsib2020n.pdf
GSIB2020N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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GSIB2040N-M3/45 gsib2020n.pdf
GSIB2040N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GSIB2060N-M3/45 gsib2020n.pdf
GSIB2060N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GSIB2080N-M3/45 gsib2020n.pdf
GSIB2080N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GSIB2520N-M3/45 gsib2520n.pdf
GSIB2520N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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GSIB2540N-M3/45 gsib2520n.pdf
GSIB2540N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GSIB2560N-M3/45 gsib2520n.pdf
GSIB2560N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GSIB2580N-M3/45 gsib2520n.pdf
GSIB2580N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GSIB620N-M3/45 gsib620n.pdf
GSIB620N-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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