Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41621) > Сторінка 280 з 694
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BU1508-M3/45 | Vishay General Semiconductor - Diodes Division |
 Description: BRIDGE RECT 1P 800V 15A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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BU20085S-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 20A BU-5S Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Package / Case: 4-SIP, BU-5S Packaging: Tube Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BU2008-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 20A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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BU20105S-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 20A BU-5S Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BU2010-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 20A BU Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Current - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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BU25065S-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A BU-5S Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BU2506-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.5A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 703 шт: термін постачання 21-31 дні (днів) |
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BU25085S-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A BU-5S Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube Current - Average Rectified (Io): 3.5 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BU2508-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.5A BU Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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FEPE16DT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 16A TO220AB |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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G2SB60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Part Status: Obsolete Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| G2SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GBL01-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 4A GBL Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 100 V Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GBL02-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 4A GBL Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
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GBL06-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 4A GBL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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GBL08-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 4A GBL Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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GBL10-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 4A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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GBU4B-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 4A GBU Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 100 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU4D-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 4A GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU4G-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 4A GBU Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 400 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU4J-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 4A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU4K-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 4A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU4M-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 4A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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GBU6B-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 6A GBU |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU6G-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 6A GBU |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU6J-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 6A GBU Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU6K-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 6A GBU Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 800 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU6M-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 6A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU8D-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 8A GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Average Rectified (Io): 8 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU8G-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 8A GBU |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | ||||||||||
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GBU8J-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 8A GBU Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Average Rectified (Io): 8 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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GBU8M-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GSIB1520N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB1540N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB1560N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB1580N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 727 шт: термін постачання 21-31 дні (днів) |
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GSIB15A20N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB15A40N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB15A60N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB15A80N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 15A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2020N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 20A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2040N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 20A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2060N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 20A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2080N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 20A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2520N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 25A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2540N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 25A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2560N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 25A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB2580N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 25A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GSIB620N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 6A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB640N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 6A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB660N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 6A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
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GSIB680N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 6A GSIB-5S Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 800 V Supplier Device Package: GSIB-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||
 |
GSIB6A60N-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 15A GSIB-5S |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||
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LVB1560-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 15A GSIB-5S Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GSIB-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Packaging: Tube |
на замовлення 924 шт: термін постачання 21-31 дні (днів) |
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LVB2560-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 25A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1177 шт: термін постачання 21-31 дні (днів) |
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M3045S-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 30A TO220-3 Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 980pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
MB3035S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 30A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 980pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
MBR10100CT-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 5A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||
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MBR10100-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 12700 шт: термін постачання 21-31 дні (днів) |
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MBR2090CT-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 90V 10A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
| BU1508-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1P 800V 15A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU20085S-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Mounting Type: Through Hole
Description: BRIDGE RECT 1P 800V 20A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.
| BU2008-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 20A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU20105S-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 20A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Description: BRIDGE RECT 1P 1KV 20A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU2010-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 20A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Description: BRIDGE RECT 1PHASE 1KV 20A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.10 грн |
| 20+ | 286.99 грн |
| 100+ | 231.10 грн |
| BU25065S-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU2506-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.40 грн |
| 20+ | 162.28 грн |
| 100+ | 128.21 грн |
| 500+ | 98.90 грн |
| BU25085S-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Average Rectified (Io): 3.5 A
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Average Rectified (Io): 3.5 A
товару немає в наявності
В кошику
од. на суму грн.
| BU2508-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FEPE16DT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220AB
Description: DIODE ARRAY GP 200V 16A TO220AB
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| G2SB60-M3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| GBL01-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 100V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| GBL02-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBL
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Description: BRIDGE RECT 1PHASE 200V 4A GBL
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| GBL06-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| GBL08-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| GBL10-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| GBU4B-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU4D-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU4G-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU4J-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU4K-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU4M-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| GBU6B-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 6A GBU
Description: BRIDGE RECT 1PHASE 100V 6A GBU
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU6G-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 6A GBU
Description: BRIDGE RECT 1PHASE 400V 6A GBU
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU6J-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU6K-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU6M-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU8D-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU8G-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Description: BRIDGE RECT 1PHASE 400V 8A GBU
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| GBU8J-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBU8M-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GSIB1520N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB1540N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB1560N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB1580N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.68 грн |
| 20+ | 136.56 грн |
| 100+ | 107.07 грн |
| 500+ | 81.93 грн |
| GSIB15A20N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB15A40N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB15A60N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB15A80N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 15A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2020N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2040N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2060N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2080N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 20A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2520N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2540N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2560N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB2580N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GSIB620N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB640N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB660N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GSIB680N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 6A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
Description: BRIDGE RECT 1P 800V 6A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1200 шт
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од. на суму грн.
| GSIB6A60N-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
товару немає в наявності
Мінімальне замовлення: 2400 шт
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од. на суму грн.
| LVB1560-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
Description: BRIDGE RECT 1P 600V 15A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
на замовлення 924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 501.60 грн |
| 20+ | 246.96 грн |
| 100+ | 231.30 грн |
| 500+ | 189.04 грн |
| LVB2560-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 652.71 грн |
| 20+ | 388.47 грн |
| 100+ | 316.74 грн |
| 500+ | 252.24 грн |
| 1000+ | 240.64 грн |
| M3045S-M3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A TO220-3
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE SCHOTTKY 45V 30A TO220-3
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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В кошику
од. на суму грн.
| MB3035S-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE SCHOTTKY 35V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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В кошику
од. на суму грн.
| MBR10100CT-M3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| MBR10100-M3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 12700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.16 грн |
| 10+ | 90.51 грн |
| 50+ | 68.34 грн |
| 100+ | 57.41 грн |
| 500+ | 45.61 грн |
| MBR2090CT-M3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.