Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40576) > Сторінка 283 з 677
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TZX20B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 15 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TZX22A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX22B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 65 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 17 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX24A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 19 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TZX24C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 19 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX24X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO35 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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TZX27X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 21 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX2V7B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.7V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 500 mV Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX30A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 23 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX30B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 23 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TZX30X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 23 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX33A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 120 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX33B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 120 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX33C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 120 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX36C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 140 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 27 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX36X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 140 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 27 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX4V7C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX5V1A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX5V1B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX5V1C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX5V1D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX5V6B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX6V2A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX6V2B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TZX6V2C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX6V2D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX6V2E-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX6V8C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX7V5C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX7V5D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX8V2A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX8V2B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX8V2C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX9V1A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TZX9V1B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1005-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1005-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1006-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1006-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1007-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF1007-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UF4001-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4002-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4002-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4003-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4003-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4004-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UF4005-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4005-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4006-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4006-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UF4007-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
UG1D-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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UG4A-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 4A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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UG4D-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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MUR440-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 4A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MURS120-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MURS140-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MURS240-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MURS260-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| TZX20B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.49 грн |
| 20000+ | 1.41 грн |
| 30000+ | 1.34 грн |
| TZX22A-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX22B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 17 V
Qualification: AEC-Q101
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 17 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX24A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.41 грн |
| TZX24C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX24X-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO35
Description: DIODE ZENER 24V 500MW DO35
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TZX27X-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 21 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX2V7B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX30A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
товару немає в наявності
В кошику
од. на суму грн.
| TZX30B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.56 грн |
| 20000+ | 1.47 грн |
| 30000+ | 1.44 грн |
| TZX30X-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 23 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX33A-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX33B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX33C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX36C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX36X-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX4V7C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35
Description: DIODE ZENER 4.7V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX5V1A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX5V1B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.92 грн |
| 20000+ | 1.66 грн |
| TZX5V1C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.92 грн |
| 20000+ | 1.82 грн |
| TZX5V1D-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX5V6B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX6V2A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| TZX6V2B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.56 грн |
| TZX6V2C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| TZX6V2D-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.68 грн |
| 20000+ | 1.58 грн |
| TZX6V2E-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| TZX6V8C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX7V5C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX7V5D-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TZX8V2A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX8V2B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX8V2C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX9V1A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35
Description: DIODE ZENER 9.1V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| TZX9V1B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| UF1005-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
товару немає в наявності
В кошику
од. на суму грн.
| UF1005-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
товару немає в наявності
В кошику
од. на суму грн.
| UF1006-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Description: DIODE GEN PURP 800V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| UF1006-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Description: DIODE GEN PURP 800V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| UF1007-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
товару немає в наявності
В кошику
од. на суму грн.
| UF1007-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
товару немає в наявності
В кошику
од. на суму грн.
| UF4001-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4002-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4002-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4003-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4003-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4004-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.50 грн |
| 6000+ | 11.43 грн |
| UF4005-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4005-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4006-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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| UF4006-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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| UF4007-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
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| UG1D-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Description: DIODE GEN PURP 200V 1A DO204AL
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| UG4A-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| UG4D-M3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| MUR440-M3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| MURS120-M3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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| MURS140-M3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| MURS240-M3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| MURS260-M3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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