Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40576) > Сторінка 449 з 677
| Фото | Назва | Виробник | Інформація |
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MMSZ4713-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V |
на замовлення 8890 шт: термін постачання 21-31 дні (днів) |
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PLZ3V0A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.96V 960MW DO219AC |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PLZ3V0A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.96V 960MW DO219AC |
на замовлення 24028 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ18AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 29.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 51.4A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ18AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 29.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 51.4A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52B4V7-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 410MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 78 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZT52B4V7-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 410MW SOD123Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 78 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
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V2PM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 2A MICROSMPPackaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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V2PM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 2A MICROSMPPackaging: Cut Tape (CT) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V |
на замовлення 13495 шт: термін постачання 21-31 дні (днів) |
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BAQ33-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30V 200MA SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAQ33-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30V 200MA SOD80 |
на замовлення 2888 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAQ134-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 60V 200MA SOD80 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAQ134-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 60V 200MA SOD80 |
на замовлення 14917 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAQ335-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 125V 200MA MICROMELF |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAQ335-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 125V 200MA MICROMELF |
на замовлення 9007 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MSS1P4HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMPPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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MSS1P4HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMPPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 30435 шт: термін постачання 21-31 дні (днів) |
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MSS1P5HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A MICROSMPPackaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MSS1P5HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A MICROSMPPackaging: Cut Tape (CT) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12891 шт: термін постачання 21-31 дні (днів) |
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MSS1P6HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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MSS1P6HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 24525 шт: термін постачання 21-31 дні (днів) |
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MSS1P2LHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A MICROSMP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSS1P6HM3J_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ7.0AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 12VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ7.0AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 12VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ7.0AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 12VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ7.5CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.5VWM 12.9V DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ7.5CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.5VWM 12.9V DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V3P6-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2.4A DO220AAPackaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V3P6-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2.4A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V |
на замовлення 10456 шт: термін постачання 21-31 дні (днів) |
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SS3P6-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO220AAPackaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS3P6-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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BYM12-100-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213ABPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
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BYM12-100-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213ABPackaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 43220 шт: термін постачання 21-31 дні (днів) |
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BYM11-400-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BYM11-400-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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BYM11-400-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYM11-400-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 911 шт: термін постачання 21-31 дні (днів) |
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BZM55C16-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW MICROMELFPackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: MicroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 27480 шт: термін постачання 21-31 дні (днів) |
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BZM55C16-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW MICROMELFPackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: MicroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 28539 шт: термін постачання 21-31 дні (днів) |
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SM8S16A-71HE4_A/J | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 16VWM 26VC DO218ABPackaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 254A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BYG23MHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TPSMB18AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 23.8A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TPSMB18AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 23.8A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TPSMB18A-1BHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 600W SMB DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 23.8A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMB18A-1BHE3/5BT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 23.8A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE300-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 243VWM 430VC DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 243V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 270V Voltage - Clamping (Max) @ Ipp: 430V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE300C-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 243VWM 430VC DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 243V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 270V Voltage - Clamping (Max) @ Ipp: 430V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V8PA10-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A DO221BCPackaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 850pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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V8PA10-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 850pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
на замовлення 32752 шт: термін постачання 21-31 дні (днів) |
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VS-20TQ045S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V |
на замовлення 6340 шт: термін постачання 21-31 дні (днів) |
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BZM55C9V1-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW MICROMELFPackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: MicroMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BZM55C9V1-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW MICROMELFPackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: MicroMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15212 шт: термін постачання 21-31 дні (днів) |
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BZT52B22-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 410MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52B22-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 410MW SOD123Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
на замовлення 3722 шт: термін постачання 21-31 дні (днів) |
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TPSMB16AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13.6VWM 22.5V DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 13.6V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ4624-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 350MW SOT23-3 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ4624-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 350MW SOT23-3 |
на замовлення 14729 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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GSD2004S-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 240V 225MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 225mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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GSD2004S-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 240V 225MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 225mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 34223 шт: термін постачання 21-31 дні (днів) |
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| MMSZ4713-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
на замовлення 8890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.70 грн |
| 25+ | 13.24 грн |
| 100+ | 6.48 грн |
| 500+ | 5.07 грн |
| 1000+ | 3.52 грн |
| PLZ3V0A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.96V 960MW DO219AC
Description: DIODE ZENER 2.96V 960MW DO219AC
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PLZ3V0A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.96V 960MW DO219AC
Description: DIODE ZENER 2.96V 960MW DO219AC
на замовлення 24028 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SMCJ18AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ18AHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZT52B4V7-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Description: DIODE ZENER 4.7V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.91 грн |
| 6000+ | 3.37 грн |
| 9000+ | 3.18 грн |
| 15000+ | 2.07 грн |
| BZT52B4V7-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Description: DIODE ZENER 4.7V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 38+ | 8.45 грн |
| 100+ | 4.04 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.59 грн |
| V2PM12-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Description: DIODE SCHOTTKY 120V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 5.07 грн |
| 9000+ | 3.76 грн |
| V2PM12-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Description: DIODE SCHOTTKY 120V 2A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
на замовлення 13495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 16+ | 19.93 грн |
| 100+ | 9.73 грн |
| 500+ | 7.61 грн |
| 1000+ | 5.29 грн |
| 2000+ | 4.58 грн |
| BAQ33-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA SOD80
Description: DIODE GEN PURP 30V 200MA SOD80
товару немає в наявності
В кошику
од. на суму грн.
| BAQ33-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA SOD80
Description: DIODE GEN PURP 30V 200MA SOD80
на замовлення 2888 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAQ134-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 200MA SOD80
Description: DIODE GEN PURP 60V 200MA SOD80
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAQ134-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 200MA SOD80
Description: DIODE GEN PURP 60V 200MA SOD80
на замовлення 14917 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAQ335-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 125V 200MA MICROMELF
Description: DIODE GP 125V 200MA MICROMELF
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAQ335-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 125V 200MA MICROMELF
Description: DIODE GP 125V 200MA MICROMELF
на замовлення 9007 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MSS1P4HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 4.57 грн |
| 9000+ | 4.03 грн |
| 13500+ | 3.84 грн |
| 22500+ | 3.40 грн |
| MSS1P4HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 30435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.22 грн |
| 28+ | 11.80 грн |
| 100+ | 7.93 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.12 грн |
| 2000+ | 4.63 грн |
| MSS1P5HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 5.21 грн |
| 9000+ | 4.15 грн |
| MSS1P5HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12891 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| 17+ | 19.46 грн |
| 100+ | 9.85 грн |
| 500+ | 7.54 грн |
| 1000+ | 5.59 грн |
| 2000+ | 4.71 грн |
| MSS1P6HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 3.54 грн |
| 9000+ | 3.04 грн |
| 13500+ | 3.03 грн |
| 22500+ | 2.84 грн |
| MSS1P6HM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 24525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.56 грн |
| 31+ | 10.53 грн |
| 100+ | 8.75 грн |
| 500+ | 6.08 грн |
| 1000+ | 4.81 грн |
| 2000+ | 4.25 грн |
| MSS1P2LHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Description: DIODE SCHOTTKY 20V 1A MICROSMP
товару немає в наявності
В кошику
од. на суму грн.
| MSS1P6HM3J_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ7.0AHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ7.0AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ7.0AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ7.5CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ7.5CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V3P6-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.87 грн |
| 6000+ | 7.36 грн |
| V3P6-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
на замовлення 10456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 16+ | 21.13 грн |
| 100+ | 15.21 грн |
| 500+ | 11.17 грн |
| 1000+ | 9.99 грн |
| SS3P6-M3/85A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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В кошику
од. на суму грн.
| SS3P6-M3/85A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.19 грн |
| 22+ | 14.83 грн |
| 100+ | 10.38 грн |
| 500+ | 8.02 грн |
| 1000+ | 6.61 грн |
| 2000+ | 6.30 грн |
| BYM12-100-E3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 11.64 грн |
| 3000+ | 10.02 грн |
| 7500+ | 9.51 грн |
| 10500+ | 8.29 грн |
| 37500+ | 8.10 грн |
| BYM12-100-E3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 43220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 13+ | 25.36 грн |
| 100+ | 17.66 грн |
| 500+ | 12.94 грн |
| BYM11-400-E3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.52 грн |
| BYM11-400-E3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.47 грн |
| 16+ | 20.41 грн |
| 100+ | 13.79 грн |
| 500+ | 10.05 грн |
| BYM11-400-E3/97 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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В кошику
од. на суму грн.
| BYM11-400-E3/97 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 911 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 15+ | 21.69 грн |
| 100+ | 14.62 грн |
| 500+ | 10.69 грн |
| BZM55C16-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 27480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 3.70 грн |
| 5000+ | 3.18 грн |
| 7500+ | 2.99 грн |
| 12500+ | 2.30 грн |
| 17500+ | 2.23 грн |
| 25000+ | 2.16 грн |
| BZM55C16-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 28539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.42 грн |
| 41+ | 7.89 грн |
| 100+ | 4.07 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.41 грн |
| SM8S16A-71HE4_A/J |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 254A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 16VWM 26VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 254A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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од. на суму грн.
| BYG23MHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TPSMB18AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TPSMB18AHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| TPSMB18A-1BHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600W SMB DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 600W SMB DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| TPSMB18A-1BHE3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6KE300-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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| P6KE300C-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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| V8PA10-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14000+ | 11.51 грн |
| 28000+ | 10.33 грн |
| V8PA10-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 32752 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.37 грн |
| 11+ | 30.78 грн |
| 100+ | 22.46 грн |
| 500+ | 16.11 грн |
| 1000+ | 13.87 грн |
| 2000+ | 13.16 грн |
| 5000+ | 11.67 грн |
| VS-20TQ045S-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Description: DIODE SCHOTTKY 45V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
на замовлення 6340 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.66 грн |
| 50+ | 61.48 грн |
| 100+ | 55.11 грн |
| 500+ | 41.23 грн |
| 1000+ | 37.98 грн |
| BZM55C9V1-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 2.13 грн |
| 5000+ | 1.78 грн |
| BZM55C9V1-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.59 грн |
| 44+ | 7.26 грн |
| 102+ | 3.14 грн |
| 500+ | 2.89 грн |
| 1000+ | 2.76 грн |
| BZT52B22-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.66 грн |
| BZT52B22-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 3722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.08 грн |
| 35+ | 9.17 грн |
| 100+ | 4.47 грн |
| 500+ | 4.01 грн |
| 1000+ | 3.49 грн |
| TPSMB16AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 13.6VWM 22.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| MMBZ4624-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
Description: DIODE ZENER 4.7V 350MW SOT23-3
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MMBZ4624-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
Description: DIODE ZENER 4.7V 350MW SOT23-3
на замовлення 14729 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GSD2004S-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.73 грн |
| 6000+ | 3.33 грн |
| 9000+ | 2.77 грн |
| 30000+ | 2.55 грн |
| GSD2004S-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 34223 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 22+ | 14.67 грн |
| 100+ | 7.16 грн |
| 500+ | 5.60 грн |
| 1000+ | 3.89 грн |













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