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SMBJ20A/54 SMBJ20A/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ24A/54 SMBJ24A/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 1
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SMBJ33A/54 SMBJ33A/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ5.0CA/54 SMBJ5.0CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 65.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ6.5CA/54 SMBJ6.5CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
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SMBJ10CA/54 SMBJ10CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 10VWM 17VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ12CA/54 SMBJ12CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 12VWM 19.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ20CA/54 SMBJ20CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ24CA/54 SMBJ24CA/54 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Type: Zener
Mounting Type: Surface Mount
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SA33A/54 SA33A/54 Vishay General Semiconductor - Diodes Division SA5.0-170CA.pdf Description: TVS DIODE 33VWM 53.3VC DO204AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 9.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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DF02S/77 DF02S/77 Vishay General Semiconductor - Diodes Division DS_112_DF.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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DF04S/77 DF04S/77 Vishay General Semiconductor - Diodes Division DS_112_DF.pdf Description: BRIDGE RECT 1PHASE 400V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DF06S/77 DF06S/77 Vishay General Semiconductor - Diodes Division DS_417_DF.pdf Description: BRIDGE RECT 1PHASE 600V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S2A/54 S2A/54 Vishay General Semiconductor - Diodes Division S2x.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
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S2D/54 S2D/54 Vishay General Semiconductor - Diodes Division S2x.pdf Description: DIODE STANDARD 200V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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S2J/54 S2J/54 Vishay General Semiconductor - Diodes Division S2x.pdf Description: DIODE GEN PURP 600V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SS12/54 SS12/54 Vishay General Semiconductor - Diodes Division SS12-SS16.pdf Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SS16/1 SS16/1 Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SGL41-20/96 SGL41-20/96 Vishay General Semiconductor - Diodes Division BYM13-20thru13-60%2C%20SGL41-20%20thru41-60.pdf Description: DIODE SCHOTTKY 20V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 4000 шт
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SGL41-40/96 SGL41-40/96 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 40V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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SGL41-60/96 SGL41-60/96 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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GF1B/17A GF1B/17A Vishay General Semiconductor - Diodes Division gf1.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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GF1D/1754 GF1D/1754 Vishay General Semiconductor - Diodes Division gf1.pdf Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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GF1G/1754 GF1G/1754 Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GF1M/1754 GF1M/1754 Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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GL41B/54 GL41B/54 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
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DF02S/77 DF02S/77 Vishay General Semiconductor - Diodes Division DS_112_DF.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
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SS12/54 SS12/54 Vishay General Semiconductor - Diodes Division SS12-SS16.pdf Description: DIODE SCHOTTKY 20V 1A DO214AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
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FEP16BT/45 FEP16BT/45 Vishay General Semiconductor - Diodes Division FEP%28F%2CB%2916xT_Rev03.pdf Description: DIODE ARRAY GP 100V 16A TO220-3
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
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FEP16CT/45 FEP16CT/45 Vishay General Semiconductor - Diodes Division FEP%28F%2CB%2916xT_Rev03.pdf Description: DIODE ARRAY GP 150V 16A TO220-3
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
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FEP16DT/45 FEP16DT/45 Vishay General Semiconductor - Diodes Division FEP%28F%2CB%2916xT_Rev03.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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FEP16GT/45 FEP16GT/45 Vishay General Semiconductor - Diodes Division FEP%28F%2CB%2916xT_Rev03.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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MBR1060/45 MBR1060/45 Vishay General Semiconductor - Diodes Division MBR1035%20-%20MBR1060.pdf Description: DIODE SCHOTTKY 60V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MBR1045/45 MBR1045/45 Vishay General Semiconductor - Diodes Division MBR1035%20-%20MBR1060.pdf Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR3045PT-E3/45 MBR3045PT-E3/45 Vishay General Semiconductor - Diodes Division mbr3035p.pdf description Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBR4045PT-E3/45 MBR4045PT-E3/45 Vishay General Semiconductor - Diodes Division MBR3035-3060PT.pdf Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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DF02M/45 DF02M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Bulk
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DF04M/45 DF04M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 400V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DF06M/45 DF06M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 600V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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DF10M/45 DF10M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N5406-E3/54 1N5406-E3/54 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 11555 шт:
термін постачання 21-31 дні (днів)
4+100.70 грн
10+61.16 грн
100+40.49 грн
500+29.69 грн
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1N5407-E3/54 1N5407-E3/54 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 4789 шт:
термін постачання 21-31 дні (днів)
4+100.70 грн
10+61.16 грн
100+40.49 грн
500+29.69 грн
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1N5408-E3/54 1N5408-E3/54 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 30856 шт:
термін постачання 21-31 дні (днів)
4+101.49 грн
10+61.62 грн
100+40.82 грн
500+29.93 грн
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1N5820-E3/54 1N5820-E3/54 Vishay General Semiconductor - Diodes Division 1n5820.pdf Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
на замовлення 8685 шт:
термін постачання 21-31 дні (днів)
6+61.06 грн
10+36.65 грн
100+23.75 грн
500+17.06 грн
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1N5821-E3/54 1N5821-E3/54 Vishay General Semiconductor - Diodes Division 1n5820.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
на замовлення 13236 шт:
термін постачання 21-31 дні (днів)
6+61.06 грн
10+36.65 грн
100+23.75 грн
500+17.06 грн
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GI750-E3/54 GI750-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
2+187.92 грн
10+116.67 грн
100+79.90 грн
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GI751-E3/54 GI751-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 11292 шт:
термін постачання 21-31 дні (днів)
2+187.92 грн
10+116.67 грн
100+79.90 грн
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GI754-E3/54 GI754-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
на замовлення 25879 шт:
термін постачання 21-31 дні (днів)
5+65.81 грн
10+51.85 грн
100+40.29 грн
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GI756-E3/54 GI756-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 9088 шт:
термін постачання 21-31 дні (днів)
2+187.92 грн
10+116.67 грн
100+79.90 грн
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GI758-E3/54 GI758-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE GEN PURP 800V 6A P600
на замовлення 8547 шт:
термін постачання 21-31 дні (днів)
5+75.33 грн
10+65.21 грн
100+50.87 грн
Мінімальне замовлення: 5 шт
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SB520-E3/54 SB520-E3/54 Vishay General Semiconductor - Diodes Division sb520.pdf Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
на замовлення 8353 шт:
термін постачання 21-31 дні (днів)
14+22.99 грн
Мінімальне замовлення: 14 шт
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SB530-E3/54 SB530-E3/54 Vishay General Semiconductor - Diodes Division sb520.pdf Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
4+91.98 грн
10+55.66 грн
100+36.73 грн
500+26.83 грн
Мінімальне замовлення: 4 шт
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SB540-E3/54 SB540-E3/54 Vishay General Semiconductor - Diodes Division sb520.pdf Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 21824 шт:
термін постачання 21-31 дні (днів)
4+91.98 грн
10+55.66 грн
100+36.73 грн
500+26.83 грн
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VS-12F120 VS-12F120 Vishay General Semiconductor - Diodes Division vs-12fseries.pdf Description: DIODE GEN PURP 1.2KV 12A DO203AA
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Current - Average Rectified (Io): 12A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+593.90 грн
10+407.67 грн
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VS-50RIA60 VS-50RIA60 Vishay General Semiconductor - Diodes Division vs-50ria.pdf Description: SCR 600V 80A TO-208AC (TO-65)
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 80 A
Part Status: Active
Supplier Device Package: TO-208AC (TO-65)
Current - Off State (Max): 15 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 50 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 1430A, 1490A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AC, TO-65-3, Stud
Packaging: Bulk
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+1290.10 грн
10+886.65 грн
100+690.33 грн
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VS-80RIA120 Vishay General Semiconductor - Diodes Division Description: SCR PHASE CONT 1200V 125A TO-94
Packaging: Bulk
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 Мінімальне замовлення: 25 шт
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GBPC1508W/1 GBPC1508W/1 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 800V 15A GBPC-W
товару немає в наявності
 Мінімальне замовлення: 100 шт
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VS-21DQ04 VS-21DQ04 Vishay General Semiconductor - Diodes Division VS-21DQ04%28M3%29.pdf Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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IRKT41/12A Vishay General Semiconductor - Diodes Division irk.41%2C.56.pdf Description: SCR MODULE 1.2KV 100A ADD-A-PAK
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 45 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3 + 4)
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 20 шт
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CPV362M4F CPV362M4F Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 8.8A 23W IMS-2
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SMBJ20A/54 smbj.pdf
SMBJ20A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ24A/54 smbj.pdf
SMBJ24A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 1
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SMBJ33A/54 smbj.pdf
SMBJ33A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ5.0CA/54 smbj.pdf
SMBJ5.0CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 65.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ6.5CA/54 smbj.pdf
SMBJ6.5CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
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SMBJ10CA/54 smbj.pdf
SMBJ10CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ12CA/54 smbj.pdf
SMBJ12CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ20CA/54 smbj.pdf
SMBJ20CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SMBJ24CA/54 smbj.pdf
SMBJ24CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Type: Zener
Mounting Type: Surface Mount
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SA33A/54 SA5.0-170CA.pdf
SA33A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO204AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 9.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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DF02S/77 DS_112_DF.pdf
DF02S/77
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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DF04S/77 DS_112_DF.pdf
DF04S/77
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Мінімальне замовлення: 1500 шт
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DF06S/77 DS_417_DF.pdf
DF06S/77
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Мінімальне замовлення: 3000 шт
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S2A/54 S2x.pdf
S2A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
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S2D/54 S2x.pdf
S2D/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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S2J/54 S2x.pdf
S2J/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SS12/54 SS12-SS16.pdf
SS12/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SS16/1 ss12.pdf
SS16/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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Мінімальне замовлення: 1800 шт
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SGL41-20/96 BYM13-20thru13-60%2C%20SGL41-20%20thru41-60.pdf
SGL41-20/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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SGL41-40/96 bym13.pdf
SGL41-40/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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SGL41-60/96 bym13.pdf
SGL41-60/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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GF1B/17A gf1.pdf
GF1B/17A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
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GF1D/1754 gf1.pdf
GF1D/1754
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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GF1G/1754 gf1x.pdf
GF1G/1754
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Мінімальне замовлення: 1500 шт
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GF1M/1754 gf1x.pdf
GF1M/1754
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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GL41B/54 bym10-xxx.pdf
GL41B/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
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DF02S/77 DS_112_DF.pdf
DF02S/77
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
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SS12/54 SS12-SS16.pdf
SS12/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
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FEP16BT/45 FEP%28F%2CB%2916xT_Rev03.pdf
FEP16BT/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 16A TO220-3
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
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FEP16CT/45 FEP%28F%2CB%2916xT_Rev03.pdf
FEP16CT/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 16A TO220-3
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
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FEP16DT/45 FEP%28F%2CB%2916xT_Rev03.pdf
FEP16DT/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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FEP16GT/45 FEP%28F%2CB%2916xT_Rev03.pdf
FEP16GT/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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MBR1060/45 MBR1035%20-%20MBR1060.pdf
MBR1060/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MBR1045/45 MBR1035%20-%20MBR1060.pdf
MBR1045/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
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MBR3045PT-E3/45 description mbr3035p.pdf
MBR3045PT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBR4045PT-E3/45 MBR3035-3060PT.pdf
MBR4045PT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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DF02M/45 dfm.pdf
DF02M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
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DF04M/45 dfm.pdf
DF04M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
DF06M/45 dfm.pdf
DF06M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
DF10M/45 dfm.pdf
DF10M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
1N5406-E3/54 1n5400.pdf
1N5406-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 11555 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+100.70 грн
10+61.16 грн
100+40.49 грн
500+29.69 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
1N5407-E3/54 1n5400.pdf
1N5407-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 4789 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+100.70 грн
10+61.16 грн
100+40.49 грн
500+29.69 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
1N5408-E3/54 1n5400.pdf
1N5408-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 30856 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+101.49 грн
10+61.62 грн
100+40.82 грн
500+29.93 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
1N5820-E3/54 1n5820.pdf
1N5820-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
на замовлення 8685 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
6+61.06 грн
10+36.65 грн
100+23.75 грн
500+17.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
1N5821-E3/54 1n5820.pdf
1N5821-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
на замовлення 13236 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
6+61.06 грн
10+36.65 грн
100+23.75 грн
500+17.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
GI750-E3/54 gi750.pdf
GI750-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+187.92 грн
10+116.67 грн
100+79.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
GI751-E3/54 gi750.pdf
GI751-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 11292 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+187.92 грн
10+116.67 грн
100+79.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
GI754-E3/54 gi750.pdf
GI754-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
на замовлення 25879 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+65.81 грн
10+51.85 грн
100+40.29 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
GI756-E3/54 gi750.pdf
GI756-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 9088 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+187.92 грн
10+116.67 грн
100+79.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
GI758-E3/54 gi750.pdf
GI758-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 6A P600
на замовлення 8547 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+75.33 грн
10+65.21 грн
100+50.87 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SB520-E3/54 sb520.pdf
SB520-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
на замовлення 8353 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
14+22.99 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
SB530-E3/54 sb520.pdf
SB530-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+91.98 грн
10+55.66 грн
100+36.73 грн
500+26.83 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SB540-E3/54 sb520.pdf
SB540-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 21824 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+91.98 грн
10+55.66 грн
100+36.73 грн
500+26.83 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
VS-12F120 vs-12fseries.pdf
VS-12F120
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 12A DO203AA
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Current - Average Rectified (Io): 12A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+593.90 грн
10+407.67 грн
В кошику  од. на суму  грн.
VS-50RIA60 vs-50ria.pdf
VS-50RIA60
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 600V 80A TO-208AC (TO-65)
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 80 A
Part Status: Active
Supplier Device Package: TO-208AC (TO-65)
Current - Off State (Max): 15 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 50 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 1430A, 1490A
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AC, TO-65-3, Stud
Packaging: Bulk
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+1290.10 грн
10+886.65 грн
100+690.33 грн
В кошику  од. на суму  грн.
VS-80RIA120
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR PHASE CONT 1200V 125A TO-94
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
GBPC1508W/1
GBPC1508W/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A GBPC-W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
VS-21DQ04 VS-21DQ04%28M3%29.pdf
VS-21DQ04
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRKT41/12A irk.41%2C.56.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 100A ADD-A-PAK
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 45 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3 + 4)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
CPV362M4F
CPV362M4F
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 8.8A 23W IMS-2
товару немає в наявності
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