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293D336X9020C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; C; 2312; ±10%; -55÷125°C; 293D
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
500+21.23 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
ZSC00BM1011EARL ZSC00BM1011EARL VISHAY ZSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 100uF; 25VDC; Ø6.3x7.7mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Body dimensions: Ø6.3x7.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 7.7mm
Diameter: 6.3mm
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)
40+11.51 грн
60+8.27 грн
100+6.85 грн
500+5.26 грн
1000+4.26 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
RCA08053K65FHEA RCA08053K65FHEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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RCA08053K65FKEA RCA08053K65FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08053K65FKEA CRCW08053K65FKEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
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CRCW08053K65FKTABC CRCW08053K65FKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 3.65kΩ; 0.125W; ±1%; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
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SUG80050E-GE3 VISHAY sug80050e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247
Technology: TrenchFET®
Kind of package: tube
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 6.3mΩ
Power dissipation: 500W
Drain current: 100A
Drain-source voltage: 150V
Pulsed drain current: 300A
Gate-source voltage: ±20V
Kind of channel: enhancement
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GBU8K-E3/51 GBU8K-E3/51 VISHAY gbu8a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
3+175.39 грн
10+106.90 грн
50+79.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8K-E3/45 GBU8K-E3/45 VISHAY gbu8a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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GBU8K-M3/45 VISHAY gbu8a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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GBU8K-M3/51 GBU8K-M3/51 VISHAY gbu8a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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IRFPC60PBF IRFPC60PBF VISHAY irfpc60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
1+461.40 грн
10+328.22 грн
25+293.15 грн
50+271.43 грн
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SUP70101EL-GE3 SUP70101EL-GE3 VISHAY sup70101el.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -240A
Drain current: -120A
Drain-source voltage: -100V
Gate charge: 0.19µC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
2+224.85 грн
5+169.54 грн
10+154.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUP53P06-20-E3 SUP53P06-20-E3 VISHAY sup53p06-20.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -46.8A; 66.7W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
3+192.48 грн
10+134.46 грн
25+122.77 грн
50+114.42 грн
100+107.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SUP85N10-10-GE3 SUP85N10-10-GE3 VISHAY SUP%2CSUB85N10-10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: 240A
Drain current: 85A
Drain-source voltage: 100V
Gate charge: 160nC
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
2+345.38 грн
10+263.08 грн
50+206.29 грн
100+189.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUP10250E-GE3 SUP10250E-GE3 VISHAY sup10250e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 36.3A; 125W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 36.3A
Drain-source voltage: 250V
Gate charge: 88nC
On-state resistance: 32.5mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
на замовлення 422 шт:
термін постачання 14-30 дні (днів)
2+250.94 грн
5+181.23 грн
10+158.68 грн
25+146.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PR02000208200JA100 PR02000208200JA100 VISHAY PR_Vishay.pdf Category: THT Resistors
Description: Resistor: power metal; THT; 820Ω; 2W; ±5%; 500V; Ø3.9x12mm; axial
Type of resistor: power metal
Resistance: 820Ω
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Temperature coefficient: 250ppm/°C
Diameter: 3.9mm
Body dimensions: Ø3.9x12mm
Length: 12mm
Leads: axial
Resistor features: high power and small dimension
Mounting: THT
на замовлення 957 шт:
термін постачання 14-30 дні (днів)
18+24.99 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PR03000208200JAC00 PR03000208200JAC00 VISHAY PR_Vishay.pdf Category: THT Resistors
Description: Resistor: power metal; THT; 820Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Resistance: 820Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Diameter: 5.2mm
Body dimensions: Ø5.2x19.5mm
Length: 19.5mm
Leads: axial
Resistor features: high power and small dimension
Mounting: THT
на замовлення 429 шт:
термін постачання 14-30 дні (днів)
16+28.96 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MRS25000C8200FCT00 MRS25000C8200FCT00 VISHAY MRS25.pdf Category: THT Resistors
Description: Resistor: thin film; THT; 820Ω; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Type of resistor: thin film
Resistance: 820Ω
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Mounting: THT
на замовлення 3314 шт:
термін постачання 14-30 дні (днів)
45+10.20 грн
103+4.09 грн
125+3.81 грн
250+3.17 грн
500+2.86 грн
650+2.78 грн
1000+2.65 грн
1300+2.50 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
MAL215733471E3 VISHAY 157pumsi.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 250VDC; Ø25x35mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 250V DC
Body dimensions: Ø25x35mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Height: 35mm
Diameter: 25mm
Terminal pitch: 10mm
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RCA08057K50FKEA RCA08057K50FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08057K50FKTABC CRCW08057K50FKTABC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
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CRCW08057K50FHEAP CRCW08057K50FHEAP VISHAY 56.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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CRCW080524K3FKTABC CRCW080524K3FKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 24.3kΩ; 0.125W; ±1%; 150V
Operating voltage: 150V
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 24.3kΩ
на замовлення 4200 шт:
термін постачання 14-30 дні (днів)
200+2.25 грн
500+1.11 грн
1000+0.68 грн
Мінімальне замовлення: 200
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VDRS10P275BSE VDRS10P275BSE VISHAY vdrs.pdf Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA; Ø12mm
Mounting: THT
Leads dimensions: Ø0.8x17mm
Terminal pitch: 8mm
Height: 12mm
Diameter: 12mm
Body dimensions: Ø12mm
Max. operating voltage: 275V AC; 350V DC
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
Type of varistor: metal-oxide
на замовлення 457 шт:
термін постачання 14-30 дні (днів)
10+44.97 грн
14+30.23 грн
25+27.23 грн
50+24.64 грн
100+21.71 грн
250+17.46 грн
Мінімальне замовлення: 10
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CRCW08051K50JNTABC CRCW08051K50JNTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 17400 шт:
термін постачання 14-30 дні (днів)
300+2.13 грн
500+0.99 грн
1000+0.66 грн
5000+0.21 грн
15000+0.20 грн
Мінімальне замовлення: 300
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RCA08051K50FKEA RCA08051K50FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 1.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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RCA0805330KFKEA RCA0805330KFKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW0805330KFKEA CRCW0805330KFKEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
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CRCW0805330KJNEA CRCW0805330KJNEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Roll diameter max.: 180mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
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CRCW0805330KFKTBBC CRCW0805330KFKTBBC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 10000pcs.
Body dimensions: 2x1.25x0.45mm
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VJ0805A330KXBCW1BC VJ0805A330KXBCW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33pF; 100V; C0G (NP0); ±10%; SMD; 0805
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±10%
Operating voltage: 100V
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 33pF
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SMAJ48CA-E3/61 SMAJ48CA-E3/61 VISHAY smajA-CA_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷58.9V; 5.2A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 1158 шт:
термін постачання 14-30 дні (днів)
20+22.49 грн
30+14.36 грн
36+11.61 грн
100+5.68 грн
500+5.43 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AC05000003908JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 5W
Tolerance: ±5%
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Conform to the norm: AEC-Q200
Leads: axial
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AC05000003909JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 39Ω
Power: 5W
Tolerance: ±5%
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Conform to the norm: AEC-Q200
Leads: axial
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SI7390DP-T1-E3 VISHAY si7390dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
On-state resistance: 13.5mΩ
Power dissipation: 5W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 15nC
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SI7390DP-T1-GE3 VISHAY si7390dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
On-state resistance: 13.5mΩ
Power dissipation: 5W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 15nC
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VS-8EWF02S-M3 VISHAY vs-8ewf02sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Reverse recovery time: 200ns
Leakage current: 3mA
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 75pcs.
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: tube
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STR-M3 VISHAY vs-8ewf02sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 55ns; DPAK; Ufmax: 1.2V; 2000pcs.
Reverse recovery time: 55ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 2000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STRL-M3 VISHAY vs-8ewf02sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; 3000pcs.
Reverse recovery time: 200ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 3000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STRR-M3 VISHAY vs-8ewf02sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 55ns; DPAK; Ufmax: 1.2V; 3000pcs.
Reverse recovery time: 55ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 3000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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MCS04020C4700FE000 MCS04020C4700FE000 VISHAY 62.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 470Ω; 100mW; ±1%; 50V; 1.05x0.55x0.37mm
Type of resistor: thin film
Mounting: SMD
Resistance: 470Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Body dimensions: 1.05x0.55x0.37mm
Roll diameter max.: 180mm
Quantity in set/package: 10000pcs.
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SIHP35N60EF-GE3 VISHAY sihp35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHB35N60E-GE3 VISHAY sihb35n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 132nC
Pulsed drain current: 80A
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SIHB35N60EF-GE3 VISHAY sihb35n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHF35N60EF-GE3 VISHAY sihf35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHG35N60EF-GE3 VISHAY sihg35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHP35N60E-GE3 VISHAY sihp35n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 132nC
Pulsed drain current: 80A
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SIHB28N60EF-GE3 VISHAY sihb28n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHF28N60EF-GE3 VISHAY sihf28n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHG28N60EF-GE3 VISHAY sihg28n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHH28N60E-T1-GE3 VISHAY sihh28n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHP28N60EF-GE3 VISHAY sihp28n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHP28N65E-GE3 VISHAY sihp28n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 112mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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SIHP28N65EF-GE3 VISHAY sihp28n65ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
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CRCW0805110RFKTABC CRCW0805110RFKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
200+2.51 грн
500+1.29 грн
1000+0.80 грн
5000+0.39 грн
Мінімальне замовлення: 200
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CRCW0603110RFKTABC CRCW0603110RFKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 110Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 110Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 7696 шт:
термін постачання 14-30 дні (днів)
254+1.77 грн
505+0.83 грн
1000+0.48 грн
5000+0.33 грн
Мінімальне замовлення: 254
В кошику  од. на суму  грн.
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 VISHAY sia517dj.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2413 шт:
термін постачання 14-30 дні (днів)
8+58.46 грн
11+39.50 грн
50+27.48 грн
100+23.55 грн
500+18.87 грн
Мінімальне замовлення: 8
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MBB0207VC2208FCT00 MBB0207VC2208FCT00 VISHAY VISHAY_mbxsma.pdf Category: THT Resistors
Description: Resistor: metal film; THT; 2.2Ω; 0.6W; ±1%; 350V; Ø0.6x28mm; axial
Operating temperature: -55...155°C
Type of resistor: metal film
Mounting: THT
Leads: axial
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Resistance: 2.2Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
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MBB02070C8208FC100 MBB02070C8208FC100 VISHAY VISHAY_mbxsma.pdf Category: THT Resistors
Description: Resistor: metal film; THT; 8.2Ω; 0.6W; ±1%; 350V; Ø0.6x28mm; axial
Operating temperature: -55...155°C
Type of resistor: metal film
Mounting: THT
Leads: axial
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Resistance: 8.2Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
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293D336X9020C2TE3 293d.pdf
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; C; 2312; ±10%; -55÷125°C; 293D
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
500+21.23 грн
Мінімальне замовлення: 500
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ZSC00BM1011EARL ZSC.pdf
ZSC00BM1011EARL
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 100uF; 25VDC; Ø6.3x7.7mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Body dimensions: Ø6.3x7.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 7.7mm
Diameter: 6.3mm
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
40+11.51 грн
60+8.27 грн
100+6.85 грн
500+5.26 грн
1000+4.26 грн
Мінімальне замовлення: 40
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RCA08053K65FHEA rcae3.pdf
RCA08053K65FHEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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RCA08053K65FKEA rcae3.pdf
RCA08053K65FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08053K65FKEA 1.pdf
CRCW08053K65FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 3.65kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
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CRCW08053K65FKTABC Data Sheet CRCW_BCe3.pdf
CRCW08053K65FKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 3.65kΩ; 0.125W; ±1%; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 3.65kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
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SUG80050E-GE3 sug80050e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247
Technology: TrenchFET®
Kind of package: tube
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 6.3mΩ
Power dissipation: 500W
Drain current: 100A
Drain-source voltage: 150V
Pulsed drain current: 300A
Gate-source voltage: ±20V
Kind of channel: enhancement
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GBU8K-E3/51 gbu8a.pdf
GBU8K-E3/51
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+175.39 грн
10+106.90 грн
50+79.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8K-E3/45 gbu8a.pdf
GBU8K-E3/45
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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GBU8K-M3/45 gbu8a.pdf
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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GBU8K-M3/51 gbu8a.pdf
GBU8K-M3/51
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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IRFPC60PBF irfpc60.pdf
IRFPC60PBF
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+461.40 грн
10+328.22 грн
25+293.15 грн
50+271.43 грн
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SUP70101EL-GE3 sup70101el.pdf
SUP70101EL-GE3
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -240A
Drain current: -120A
Drain-source voltage: -100V
Gate charge: 0.19µC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+224.85 грн
5+169.54 грн
10+154.51 грн
Мінімальне замовлення: 2
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SUP53P06-20-E3 sup53p06-20.pdf
SUP53P06-20-E3
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -46.8A; 66.7W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+192.48 грн
10+134.46 грн
25+122.77 грн
50+114.42 грн
100+107.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SUP85N10-10-GE3 SUP%2CSUB85N10-10.pdf
SUP85N10-10-GE3
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: 240A
Drain current: 85A
Drain-source voltage: 100V
Gate charge: 160nC
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+345.38 грн
10+263.08 грн
50+206.29 грн
100+189.58 грн
Мінімальне замовлення: 2
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SUP10250E-GE3 sup10250e.pdf
SUP10250E-GE3
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 36.3A; 125W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 36.3A
Drain-source voltage: 250V
Gate charge: 88nC
On-state resistance: 32.5mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
на замовлення 422 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+250.94 грн
5+181.23 грн
10+158.68 грн
25+146.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PR02000208200JA100 PR_Vishay.pdf
PR02000208200JA100
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 820Ω; 2W; ±5%; 500V; Ø3.9x12mm; axial
Type of resistor: power metal
Resistance: 820Ω
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Temperature coefficient: 250ppm/°C
Diameter: 3.9mm
Body dimensions: Ø3.9x12mm
Length: 12mm
Leads: axial
Resistor features: high power and small dimension
Mounting: THT
на замовлення 957 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+24.99 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PR03000208200JAC00 PR_Vishay.pdf
PR03000208200JAC00
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 820Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Resistance: 820Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Diameter: 5.2mm
Body dimensions: Ø5.2x19.5mm
Length: 19.5mm
Leads: axial
Resistor features: high power and small dimension
Mounting: THT
на замовлення 429 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.96 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MRS25000C8200FCT00 MRS25.pdf
MRS25000C8200FCT00
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 820Ω; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Type of resistor: thin film
Resistance: 820Ω
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Mounting: THT
на замовлення 3314 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.20 грн
103+4.09 грн
125+3.81 грн
250+3.17 грн
500+2.86 грн
650+2.78 грн
1000+2.65 грн
1300+2.50 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
MAL215733471E3 157pumsi.pdf
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 250VDC; Ø25x35mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 250V DC
Body dimensions: Ø25x35mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Height: 35mm
Diameter: 25mm
Terminal pitch: 10mm
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RCA08057K50FKEA rcae3.pdf
RCA08057K50FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08057K50FKTABC Data+Sheet+CRCW_BCe3.pdf
CRCW08057K50FKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
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CRCW08057K50FHEAP 56.pdf
CRCW08057K50FHEAP
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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CRCW080524K3FKTABC Data Sheet CRCW_BCe3.pdf
CRCW080524K3FKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 24.3kΩ; 0.125W; ±1%; 150V
Operating voltage: 150V
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 24.3kΩ
на замовлення 4200 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
200+2.25 грн
500+1.11 грн
1000+0.68 грн
Мінімальне замовлення: 200
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VDRS10P275BSE vdrs.pdf
VDRS10P275BSE
Виробник: VISHAY
Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA; Ø12mm
Mounting: THT
Leads dimensions: Ø0.8x17mm
Terminal pitch: 8mm
Height: 12mm
Diameter: 12mm
Body dimensions: Ø12mm
Max. operating voltage: 275V AC; 350V DC
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
Type of varistor: metal-oxide
на замовлення 457 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+44.97 грн
14+30.23 грн
25+27.23 грн
50+24.64 грн
100+21.71 грн
250+17.46 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CRCW08051K50JNTABC Data Sheet CRCW_BCe3.pdf
CRCW08051K50JNTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 17400 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
300+2.13 грн
500+0.99 грн
1000+0.66 грн
5000+0.21 грн
15000+0.20 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
RCA08051K50FKEA rcae3.pdf
RCA08051K50FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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RCA0805330KFKEA rcae3.pdf
RCA0805330KFKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW0805330KFKEA 1.pdf
CRCW0805330KFKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
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CRCW0805330KJNEA 1.pdf
CRCW0805330KJNEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Roll diameter max.: 180mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.5mm
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CRCW0805330KFKTBBC Data+Sheet+CRCW_BCe3.pdf
CRCW0805330KFKTBBC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 330kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 0.33MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 10000pcs.
Body dimensions: 2x1.25x0.45mm
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VJ0805A330KXBCW1BC vjw1bcbascomseries.pdf
VJ0805A330KXBCW1BC
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33pF; 100V; C0G (NP0); ±10%; SMD; 0805
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±10%
Operating voltage: 100V
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 33pF
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SMAJ48CA-E3/61 smajA-CA_ser.pdf
SMAJ48CA-E3/61
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷58.9V; 5.2A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 1158 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.49 грн
30+14.36 грн
36+11.61 грн
100+5.68 грн
500+5.43 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AC05000003908JAC00 ac_ac-at_ac-ni.pdf
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 5W
Tolerance: ±5%
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Conform to the norm: AEC-Q200
Leads: axial
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AC05000003909JAC00 ac_ac-at_ac-ni.pdf
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 39Ω
Power: 5W
Tolerance: ±5%
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Conform to the norm: AEC-Q200
Leads: axial
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SI7390DP-T1-E3 si7390dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
On-state resistance: 13.5mΩ
Power dissipation: 5W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 15nC
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SI7390DP-T1-GE3 si7390dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 15A; Idm: 50A; 5W
Mounting: SMD
On-state resistance: 13.5mΩ
Power dissipation: 5W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 15nC
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VS-8EWF02S-M3 vs-8ewf02sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Reverse recovery time: 200ns
Leakage current: 3mA
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 75pcs.
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: tube
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STR-M3 vs-8ewf02sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 55ns; DPAK; Ufmax: 1.2V; 2000pcs.
Reverse recovery time: 55ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 2000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STRL-M3 vs-8ewf02sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; 3000pcs.
Reverse recovery time: 200ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 3000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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VS-8EWF02STRR-M3 vs-8ewf02sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 55ns; DPAK; Ufmax: 1.2V; 3000pcs.
Reverse recovery time: 55ns
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 3000pcs.
Max. off-state voltage: 200V
Kind of package: 13 inch reel
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
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MCS04020C4700FE000 62.pdf
MCS04020C4700FE000
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 470Ω; 100mW; ±1%; 50V; 1.05x0.55x0.37mm
Type of resistor: thin film
Mounting: SMD
Resistance: 470Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Body dimensions: 1.05x0.55x0.37mm
Roll diameter max.: 180mm
Quantity in set/package: 10000pcs.
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SIHP35N60EF-GE3 sihp35n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHB35N60E-GE3 sihb35n60e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 132nC
Pulsed drain current: 80A
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SIHB35N60EF-GE3 sihb35n60ef.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHF35N60EF-GE3 sihf35n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHG35N60EF-GE3 sihg35n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 134nC
Pulsed drain current: 80A
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SIHP35N60E-GE3 sihp35n60e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 132nC
Pulsed drain current: 80A
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SIHB28N60EF-GE3 sihb28n60ef.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHF28N60EF-GE3 sihf28n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHG28N60EF-GE3 sihg28n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHH28N60E-T1-GE3 sihh28n60e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHP28N60EF-GE3 sihp28n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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SIHP28N65E-GE3 sihp28n65e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 112mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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SIHP28N65EF-GE3 sihp28n65ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
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CRCW0805110RFKTABC Data Sheet CRCW_BCe3.pdf
CRCW0805110RFKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
200+2.51 грн
500+1.29 грн
1000+0.80 грн
5000+0.39 грн
Мінімальне замовлення: 200
В кошику  од. на суму  грн.
CRCW0603110RFKTABC Data Sheet CRCW_BCe3.pdf
CRCW0603110RFKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 110Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 110Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 7696 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
254+1.77 грн
505+0.83 грн
1000+0.48 грн
5000+0.33 грн
Мінімальне замовлення: 254
В кошику  од. на суму  грн.
SIA517DJ-T1-GE3 sia517dj.pdf
SIA517DJ-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2413 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.46 грн
11+39.50 грн
50+27.48 грн
100+23.55 грн
500+18.87 грн
Мінімальне замовлення: 8
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MBB0207VC2208FCT00 VISHAY_mbxsma.pdf
MBB0207VC2208FCT00
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 2.2Ω; 0.6W; ±1%; 350V; Ø0.6x28mm; axial
Operating temperature: -55...155°C
Type of resistor: metal film
Mounting: THT
Leads: axial
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Resistance: 2.2Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
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MBB02070C8208FC100 VISHAY_mbxsma.pdf
MBB02070C8208FC100
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 8.2Ω; 0.6W; ±1%; 350V; Ø0.6x28mm; axial
Operating temperature: -55...155°C
Type of resistor: metal film
Mounting: THT
Leads: axial
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Resistance: 8.2Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
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