| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
 |
ILD55 | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 55V Case: DIP8 CTR@If: 400%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||
| ILD55-X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: Darlington Insulation voltage: 5.3kV Collector-emitter voltage: 55V Case: SMD8 Turn-on time: 10µs Turn-off time: 35µs Max. off-state voltage: 3V Collector current: 125mA Number of pins: 8 |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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| SI7456DDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.8A; Idm: 70A Mounting: SMD Pulsed drain current: 70A Power dissipation: 22.8W Gate charge: 29.5nC Polarisation: unipolar Technology: TrenchFET® Drain current: 27.8A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 23mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||
| SI7456CDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.5A; Idm: 50A Mounting: SMD Pulsed drain current: 50A Power dissipation: 35.7W Gate charge: 23nC Polarisation: unipolar Technology: TrenchFET® Drain current: 27.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 31.5mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||
 |
GSC00AK2221CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 2.2mF; 16VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 2.2mF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...105°C Height: 16.5mm Manufacturer series: GSC Nominal life: 2000h Dimensions: 16x16.5mm |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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ZSC00AK2221CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 2.2mF; 16VDC; Ø16x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C Height: 16.5mm Diameter: 16mm |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
 |
SI2309CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.3A Pulsed drain current: -8A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 345mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| ILD55 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 55V
Case: DIP8
CTR@If: 400%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 55V
Case: DIP8
CTR@If: 400%@10mA
товару немає в наявності
В кошику
од. на суму грн.
| ILD55-X009 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 5.3kV
Collector-emitter voltage: 55V
Case: SMD8
Turn-on time: 10µs
Turn-off time: 35µs
Max. off-state voltage: 3V
Collector current: 125mA
Number of pins: 8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 5.3kV
Collector-emitter voltage: 55V
Case: SMD8
Turn-on time: 10µs
Turn-off time: 35µs
Max. off-state voltage: 3V
Collector current: 125mA
Number of pins: 8
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1100+ | 33.71 грн |
| SI7456DDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.8A; Idm: 70A
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 22.8W
Gate charge: 29.5nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 27.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 23mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.8A; Idm: 70A
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 22.8W
Gate charge: 29.5nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 27.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 23mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7456CDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.5A; Idm: 50A
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 35.7W
Gate charge: 23nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 27.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 31.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.5A; Idm: 50A
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 35.7W
Gate charge: 23nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 27.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 31.5mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| GSC00AK2221CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 16VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 16.5mm
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2mF; 16VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 16.5mm
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZSC00AK2221CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 2.2mF; 16VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 16.5mm
Diameter: 16mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 2.2mF; 16VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 16.5mm
Diameter: 16mm
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SI2309CDS-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 345mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 345mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.