| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFR1N60ATRLPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| IRFR1N60ATRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| IRFU1N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
SIHFR1N60A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.98A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of channel: enhanced |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI7850ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 35.7W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
| SI7850DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 4.5W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 10.3A On-state resistance: 31mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
| GSC00AK3321AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 3.3mF Operating voltage: 10V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 16x16.5mm Height: 16.5mm |
товар відсутній |
||||||||||||||||
| GSC00CX3320JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 3.3mF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 12.5x16mm Height: 16mm |
товар відсутній |
||||||||||||||||
 |
CRCW0603332RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C Operating temperature: -55...155°C Tolerance: ±1% Max. operating voltage: 75V Power: 0.1W Type of resistor: thick film Mounting: SMD Case - mm: 1608 Case - inch: 0603 Resistance: 332Ω |
на замовлення 10800 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
CRCW0805332KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 332kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
товар відсутній |
|||||||||||||||
 |
CRCW1206332KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Power: 0.25W Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film Resistance: 332kΩ |
товар відсутній |
|||||||||||||||
|
|
CRCW1206332RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 332Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
товар відсутній |
|||||||||||||||
| IRL620PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
| IRL620SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
| IRL620STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
 |
IL217AT | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8 Mounting: SMD Case: SO8 Turn-on time: 3µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3kV CTR@If: 13%@1mA Type of optocoupler: optocoupler Collector-emitter voltage: 70V |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
293D475X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitors series: Tantamount Capacitance: 4.7µF Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Operating voltage: 6.3V DC Case - inch: 1206 Case: A Case - mm: 3216 |
товар відсутній |
|||||||||||||||
 |
BZT03C24-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode Type of diode: Zener Power dissipation: 3.25W Zener voltage: 24V Kind of package: Ammo Pack Case: SOD57 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||
 |
P6SMB16CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
|
|
P6SMB16CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
|
|
P6SMB16CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
|
|
P6SMB16CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
| SI7806ADN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
товар відсутній |
||||||||||||||||
| SI7806ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
товар відсутній |
||||||||||||||||
| IRFI740GLCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Pulsed drain current: 23A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
MBA02040C6808FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 6.8Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
товар відсутній |
|||||||||||||||
 |
MBB02070C6808FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 6.8Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MMB02070C6808FB200 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm Operating temperature: -55...155°C Mounting: SMD Max. operating voltage: 300V Conform to the norm: AEC Q200 Type of resistor: thin film Case: 0207 MELF Power: 0.4W Resistance: 6.8Ω Tolerance: ±1% Body dimensions: Ø2.2x5.8mm Temperature coefficient: 50ppm/°C |
товар відсутній |
|||||||||||||||
 |
P600G-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 0.9V Reverse recovery time: 2.5µs |
на замовлення 1396 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
P600G-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 22A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 1.3V Leakage current: 1mA Reverse recovery time: 2.5µs |
на замовлення 2078 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| SI2387DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Case: SOT23 Drain-source voltage: -80V Drain current: -3A On-state resistance: 242mΩ Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||||||
 |
PR01000104700JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 470Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
PR01000104709JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial Type of resistor: power metal Mounting: THT Resistance: 47Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
PR01000104308FA500 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 4.3Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
PR01000104708JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 4.7Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| IRFR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
|
|
IRFR014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| IRFR014TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
IRLR014PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2987 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| IRLR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SIHFR014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Drain-source voltage: 60V Drain current: 4.9A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Mounting: SMD Case: DPAK; TO252 |
товар відсутній |
||||||||||||||||
| VO1263AAC | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV Case: Gull wing 8 |
товар відсутній |
||||||||||||||||
| RGL34D-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
 |
RGL34G-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 400V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
на замовлення 1140 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
RGL34J-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
| RGL34KHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 800V Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
| SIZ340ADT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SISH472DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 20A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerPAK® 1212-8 |
товар відсутній |
||||||||||||||||
 |
VJ1206A102JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
VJ1206Y104KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||||
| SISH101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 33W Kind of package: reel; tape Polarisation: unipolar Gate charge: 102nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -35A On-state resistance: 13mΩ Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||||||
| SS33-E3/57T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
товар відсутній |
||||||||||||||||
| SS33-E3/9AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
товар відсутній |
||||||||||||||||
| GSIB2580N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
||||||||||||||||
|
|
SMBJ10CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.3V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 3227 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SMBJ12CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.5V Max. forward impulse current: 30.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 1209 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
K827PH | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@60mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
на замовлення 1935 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SMBJ14CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.8V Max. forward impulse current: 26.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
|||||||||||||||
|
|
ES2G-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMB Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 3890 шт: термін постачання 21-30 дні (днів) |
|
| IRFR1N60ATRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR1N60ATRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFU1N60APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHFR1N60A-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.59 грн |
| 7+ | 52.59 грн |
| 20+ | 46.36 грн |
| 22+ | 38.06 грн |
| 58+ | 35.98 грн |
| SIHFR1N60ATRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7850ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 35.7W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 35.7W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
товар відсутній
| SI7850DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
товар відсутній
| GSC00AK3321AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
товар відсутній
| GSC00CX3320JARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
товар відсутній
| CRCW0603332RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Resistance: 332Ω
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Resistance: 332Ω
на замовлення 10800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.67 грн |
| 500+ | 0.8 грн |
| 1000+ | 0.48 грн |
| 3900+ | 0.21 грн |
| 5000+ | 0.19 грн |
| CRCW0805332KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 332kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 332kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW1206332KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Resistance: 332kΩ
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Resistance: 332kΩ
товар відсутній
| CRCW1206332RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| IRL620PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IRL620SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IRL620STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IL217AT | |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
на замовлення 850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.53 грн |
| 13+ | 27.68 грн |
| 25+ | 24.91 грн |
| 39+ | 20.97 грн |
| 100+ | 20.07 грн |
| 105+ | 19.86 грн |
| 500+ | 19.1 грн |
| 293D475X96R3A2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 4.7µF
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Operating voltage: 6.3V DC
Case - inch: 1206
Case: A
Case - mm: 3216
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 4.7µF
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Operating voltage: 6.3V DC
Case - inch: 1206
Case: A
Case - mm: 3216
товар відсутній
| BZT03C24-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| P6SMB16CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| SI7806ADN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| SI7806ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| IRFI740GLCPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MBA02040C6808FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| MBB02070C6808FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.8Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.44 грн |
| 170+ | 2.06 грн |
| MMB02070C6808FB200 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Max. operating voltage: 300V
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Max. operating voltage: 300V
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
товар відсутній
| P600G-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
на замовлення 1396 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.63 грн |
| 8+ | 45.88 грн |
| 10+ | 39.37 грн |
| 25+ | 36.12 грн |
| 38+ | 21.59 грн |
| 102+ | 20.41 грн |
| P600G-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
на замовлення 2078 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.63 грн |
| 8+ | 49.34 грн |
| 10+ | 46.01 грн |
| 25+ | 39.44 грн |
| 38+ | 21.59 грн |
| 102+ | 20.41 грн |
| SI2387DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
товар відсутній
| PR01000104700JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.11 грн |
| 120+ | 3.04 грн |
| 140+ | 2.62 грн |
| 370+ | 2.19 грн |
| 1000+ | 2.17 грн |
| 1010+ | 2.07 грн |
| PR01000104709JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.69 грн |
| 110+ | 3.21 грн |
| 300+ | 2.41 грн |
| 370+ | 2.19 грн |
| PR01000104308FA500 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.3Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.3Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.78 грн |
| 90+ | 4.01 грн |
| 100+ | 3.55 грн |
| 260+ | 3.17 грн |
| 700+ | 3 грн |
| PR01000104708JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.94 грн |
| 110+ | 3.38 грн |
| 300+ | 2.54 грн |
| 1000+ | 2.19 грн |
| IRFR014TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR014TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR014TRRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRLR014PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 45.45 грн |
| 14+ | 25.19 грн |
| 44+ | 18.41 грн |
| 120+ | 17.44 грн |
| 300+ | 17.37 грн |
| IRLR014TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFR014TR-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
товар відсутній
| VO1263AAC |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
товар відсутній
| RGL34D-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| RGL34G-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
на замовлення 1140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.29 грн |
| 25+ | 17.78 грн |
| 60+ | 12.95 грн |
| 165+ | 12.24 грн |
| RGL34J-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
товар відсутній
| RGL34KHE3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
товар відсутній
| SIZ340ADT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH472DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| VJ1206A102JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 3.4 грн |
| 300+ | 2.29 грн |
| VJ1206Y104KXXCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| SISH101DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
товар відсутній
| SS33-E3/57T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
товар відсутній
| SS33-E3/9AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
товар відсутній
| GSIB2580N-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| SMBJ10CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 3227 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.35 грн |
| 52+ | 6.71 грн |
| 100+ | 5.95 грн |
| 158+ | 5.13 грн |
| 433+ | 4.86 грн |
| SMBJ12CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 1209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.35 грн |
| 51+ | 6.85 грн |
| 100+ | 6.02 грн |
| 153+ | 5.24 грн |
| 421+ | 4.95 грн |
| K827PH |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
на замовлення 1935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.59 грн |
| 12+ | 29.89 грн |
| 25+ | 25.74 грн |
| 42+ | 19.24 грн |
| 115+ | 18.2 грн |
| 500+ | 17.92 грн |
| SMBJ14CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| ES2G-E3/52T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 3890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 11.55 грн |
| 45+ | 7.82 грн |
| 100+ | 6.92 грн |
| 135+ | 5.95 грн |
| 372+ | 5.63 грн |