| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WSL2512R1000FEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.1Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 3385 шт: термін постачання 21-30 дні (днів) |
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WSL2512R1500FEA | VISHAY |
Category: SMD resistors Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.15Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 3315 шт: термін постачання 21-30 дні (днів) |
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WSL2512R2500FEA | VISHAY |
Category: SMD resistors Description: Resistor: power metal; sensing; SMD; 2512; 250mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.25Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1993 шт: термін постачання 21-30 дні (днів) |
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| SI5457DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 56mΩ Type of transistor: P-MOSFET Power dissipation: 5.7W Polarisation: unipolar Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Mounting: SMD |
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SF1200-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 3.4V Leakage current: 50µA Reverse recovery time: 75ns |
на замовлення 4874 шт: термін постачання 21-30 дні (днів) |
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CNY17-3X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 |
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BFC233620473 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; X2; 47nF; 5x11x17.5mm; THT; ±20%; 15mm Mounting: THT Kind of capacitor: X2 Terminal pitch: 15mm Tolerance: ±20% Body dimensions: 5x11x17.5mm Leads dimensions: L 3.5mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 47nF Operating voltage: 310V AC; 630V DC Climate class: 55/105/56 |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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BFC233920473 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 47nF; 5x10.5x10mm; THT; ±20%; 7.5mm Kind of capacitor: X2 Climate class: 55/110/56 Leads: 2pin Body dimensions: 5x10.5x10mm Type of capacitor: polypropylene Leads dimensions: L 3.5mm Capacitance: 47nF Operating voltage: 310V AC; 630V DC Tolerance: ±20% Terminal pitch: 7.5mm Mounting: THT |
на замовлення 1650 шт: термін постачання 21-30 дні (днів) |
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| IRLL014TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR024TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR024TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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VJ1206Y103KXPAT5Z | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 250V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 250V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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| IRLZ34PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 110A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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| SIHP10N40D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 23A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
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| SI5442DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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| Si5448DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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VO3063-X006 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 4.42kV Slew rate: 1.5kV/μs Manufacturer series: VO3063 Type of optocoupler: optotriac |
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CNY17F-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: DIP6 Mounting: THT Turn-on time: 6µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-32%@10mA Manufacturer series: CNY17F Type of optocoupler: optocoupler Collector-emitter voltage: 70V Turn-off time: 25µs |
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VO4156M-X006 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 4.42kV Slew rate: 5kV/μs Type of optocoupler: optotriac |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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SFH620A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs |
на замовлення 653 шт: термін постачання 21-30 дні (днів) |
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| GSIB620-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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| GSIB640-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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GSIB660-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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| GSIB680-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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| VS-1KAB60E | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.2A Max. forward impulse current: 52A Version: square Case: D-38 Electrical mounting: THT Leads: wire Ø 0.8mm Kind of package: bulk Max. forward voltage: 1.1V |
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| VS-2KBB60R | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.9A Max. forward impulse current: 50A Version: flat Case: 2KBB Electrical mounting: THT Leads: wire Ø 0.9mm Kind of package: bulk Max. forward voltage: 1.1V |
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P6SMB68A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
на замовлення 2572 шт: термін постачання 21-30 дні (днів) |
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| VS-8EWS08STR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
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| VS-8EWS08STRL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
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| VS-8EWS12S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; high voltage Case: DPAK Max. forward voltage: 1.1V Max. forward impulse current: 150A Leakage current: 0.5mA Kind of package: tube |
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VS-8EWS16S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Semiconductor structure: single diode Max. off-state voltage: 1.6kV Features of semiconductor devices: glass passivated; high voltage Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
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TEMT6200FX01 | VISHAY |
Category: Phototransistors Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green Type of photoelement: phototransistor Case: 0805 Wavelength of peak sensitivity: 550nm Collector-emitter voltage: 6V Viewing angle: 60° LED lens: green Mounting: SMD Wavelength: 450...610nm |
на замовлення 1101 шт: термін постачання 21-30 дні (днів) |
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SMAJ36A-E3/61 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMAJ |
на замовлення 5033 шт: термін постачання 21-30 дні (днів) |
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VJ0805A180JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 18pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 6300 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y225KXQTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2µF Operating voltage: 10V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y225KXXTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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BRT13H | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Mounting: THT Number of channels: 1 Manufacturer series: BRT13 |
на замовлення 2636 шт: термін постачання 21-30 дні (днів) |
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BRT13H-X007 | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: without zero voltage crossing driver Case: Gull wing 6 Max. off-state voltage: 6V Mounting: SMD Number of channels: 1 Manufacturer series: BRT13 |
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SMM02040D3092BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 30.9kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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CRCW080536K5FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 36.5kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 6600 шт: термін постачання 21-30 дні (днів) |
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CRCW0805133KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...155°C Max. operating voltage: 150V Power: 0.125W Resistance: 133kΩ Type of resistor: thick film |
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CRCW25125R11FKEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 5.11Ω Power: 1.5W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
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| SIR122DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 59.6A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 44nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
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| SIR638ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
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BFC233868418 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 1nF Operating voltage: 300V AC; 1kV DC Body dimensions: 12.5x4x10mm Mounting: THT Terminal pitch: 10mm Tolerance: ±20% |
на замовлення 2451 шт: термін постачання 21-30 дні (днів) |
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SMBJ60A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 495 шт: термін постачання 21-30 дні (днів) |
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SMBJ60D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 67.7V Max. forward impulse current: 6.28A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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SI2392ADS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 3.1A On-state resistance: 126mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Case: SOT23 |
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| SI4392ADY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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| SI7172ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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| SI7322ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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| SIDR500EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 421A On-state resistance: 0.68mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A |
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| SI7121ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIA811ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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SQ2361AEES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 315mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
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| SQJ431AEP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
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1.5KE24A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45.2A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 986 шт: термін постачання 21-30 дні (днів) |
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TDCG1060M | VISHAY |
Category: 7-segment LED displays Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Type of display: LED Kind of display: 7-segment Digit height: 10mm; 0.39" Number of characters: 4 Colour: green Luminosity: 2.8...4mcd Common electrode: cathode Dimensions: 40.2x12.8x7mm Mounting: THT Wavelength: 562...575nm Operating current: 20mA Operating voltage: 2...2.4V |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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| PRV6SAABGYB25105KA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1MΩ Power: 1.5W Tolerance: ±10% Characteristics: linear Mechanical rotation angle: 300° Operating temperature: -55...125°C Track material: cermet Electrical rotation angle: 270° Mechanical durability: 50000 cycles Temperature coefficient: 150ppm/°C IP rating: IP67 Leads: for soldering Shaft diameter: 3.17mm Shaft length: 16mm |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Mounting: THT Operating temperature: -55...125°C Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Min. insulation resistance: 1TΩ Power: 0.75W Resistance: 1MΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 |
на замовлення 445 шт: термін постачання 21-30 дні (днів) |
|
| WSL2512R1000FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 3385 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.89 грн |
| 20+ | 21.59 грн |
| 67+ | 12.25 грн |
| 182+ | 11.62 грн |
| WSL2512R1500FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 3315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38 грн |
| 20+ | 22.7 грн |
| 100+ | 20.07 грн |
| 1000+ | 16.61 грн |
| 2000+ | 15.08 грн |
| WSL2512R2500FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 250mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.25Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 250mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.25Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.75 грн |
| 20+ | 22.7 грн |
| 100+ | 20.07 грн |
| 1000+ | 16.68 грн |
| SI5457DC-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 56mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 56mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Mounting: SMD
товар відсутній
| SF1200-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 3.4V
Leakage current: 50µA
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 3.4V
Leakage current: 50µA
Reverse recovery time: 75ns
на замовлення 4874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.75 грн |
| 11+ | 31.55 грн |
| 25+ | 24.63 грн |
| 56+ | 14.25 грн |
| 154+ | 13.49 грн |
| CNY17-3X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
товар відсутній
| BFC233620473 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 5x11x17.5mm; THT; ±20%; 15mm
Mounting: THT
Kind of capacitor: X2
Terminal pitch: 15mm
Tolerance: ±20%
Body dimensions: 5x11x17.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Climate class: 55/105/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 5x11x17.5mm; THT; ±20%; 15mm
Mounting: THT
Kind of capacitor: X2
Terminal pitch: 15mm
Tolerance: ±20%
Body dimensions: 5x11x17.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Climate class: 55/105/56
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.92 грн |
| BFC233920473 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; 5x10.5x10mm; THT; ±20%; 7.5mm
Kind of capacitor: X2
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 5x10.5x10mm
Type of capacitor: polypropylene
Leads dimensions: L 3.5mm
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Terminal pitch: 7.5mm
Mounting: THT
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; 5x10.5x10mm; THT; ±20%; 7.5mm
Kind of capacitor: X2
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 5x10.5x10mm
Type of capacitor: polypropylene
Leads dimensions: L 3.5mm
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Terminal pitch: 7.5mm
Mounting: THT
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.23 грн |
| 50+ | 14.18 грн |
| 100+ | 8.47 грн |
| 260+ | 8.01 грн |
| IRLL014TRPBF-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR024TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR024TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ1206Y103KXPAT5Z |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 250V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 250V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 250V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 250V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| IRLZ34PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP10N40D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SI5442DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
| Si5448DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
| VO3063-X006 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 1.5kV/μs
Manufacturer series: VO3063
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 1.5kV/μs
Manufacturer series: VO3063
Type of optocoupler: optotriac
товар відсутній
| CNY17F-4X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP6
Mounting: THT
Turn-on time: 6µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-32%@10mA
Manufacturer series: CNY17F
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-off time: 25µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP6
Mounting: THT
Turn-on time: 6µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-32%@10mA
Manufacturer series: CNY17F
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-off time: 25µs
товар відсутній
| VO4156M-X006 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 5kV/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 5kV/μs
Type of optocoupler: optotriac
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.19 грн |
| SFH620A-3X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
на замовлення 653 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.62 грн |
| 12+ | 30.86 грн |
| 25+ | 24.98 грн |
| 45+ | 17.92 грн |
| 123+ | 16.95 грн |
| 500+ | 16.74 грн |
| GSIB620-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB640-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB660-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB680-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| VS-1KAB60E |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.2A
Max. forward impulse current: 52A
Version: square
Case: D-38
Electrical mounting: THT
Leads: wire Ø 0.8mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.2A
Max. forward impulse current: 52A
Version: square
Case: D-38
Electrical mounting: THT
Leads: wire Ø 0.8mm
Kind of package: bulk
Max. forward voltage: 1.1V
товар відсутній
| VS-2KBB60R |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
товар відсутній
| P6SMB68A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
на замовлення 2572 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 10.28 грн |
| 53+ | 6.64 грн |
| 100+ | 6.16 грн |
| 145+ | 5.54 грн |
| 398+ | 5.26 грн |
| VS-8EWS08STR-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
товар відсутній
| VS-8EWS08STRL-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
товар відсутній
| VS-8EWS12S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; high voltage
Case: DPAK
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Leakage current: 0.5mA
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; high voltage
Case: DPAK
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Leakage current: 0.5mA
Kind of package: tube
товар відсутній
| VS-8EWS16S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
товар відсутній
| TEMT6200FX01 |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Case: 0805
Wavelength of peak sensitivity: 550nm
Collector-emitter voltage: 6V
Viewing angle: 60°
LED lens: green
Mounting: SMD
Wavelength: 450...610nm
Category: Phototransistors
Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Case: 0805
Wavelength of peak sensitivity: 550nm
Collector-emitter voltage: 6V
Viewing angle: 60°
LED lens: green
Mounting: SMD
Wavelength: 450...610nm
на замовлення 1101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.06 грн |
| 10+ | 38.06 грн |
| 42+ | 19.24 грн |
| 116+ | 18.2 грн |
| SMAJ36A-E3/61 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
на замовлення 5033 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 12.07 грн |
| 59+ | 5.95 грн |
| 100+ | 5.26 грн |
| 176+ | 4.56 грн |
| 484+ | 4.31 грн |
| VJ0805A180JXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 6300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.06 грн |
| 300+ | 1.32 грн |
| 1000+ | 0.82 грн |
| 1300+ | 0.64 грн |
| 3500+ | 0.6 грн |
| VJ0805Y225KXQTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805Y225KXXTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| BRT13H |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Mounting: THT
Number of channels: 1
Manufacturer series: BRT13
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Mounting: THT
Number of channels: 1
Manufacturer series: BRT13
на замовлення 2636 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.08 грн |
| 5+ | 154.99 грн |
| 7+ | 118.64 грн |
| 19+ | 112.17 грн |
| BRT13H-X007 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Mounting: SMD
Number of channels: 1
Manufacturer series: BRT13
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Mounting: SMD
Number of channels: 1
Manufacturer series: BRT13
товар відсутній
| SMM02040D3092BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30.9kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30.9kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| CRCW080536K5FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 36.5kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 36.5kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 6600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.77 грн |
| 500+ | 0.87 грн |
| 1000+ | 0.53 грн |
| 4100+ | 0.2 грн |
| 5000+ | 0.18 грн |
| CRCW0805133KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...155°C
Max. operating voltage: 150V
Power: 0.125W
Resistance: 133kΩ
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...155°C
Max. operating voltage: 150V
Power: 0.125W
Resistance: 133kΩ
Type of resistor: thick film
товар відсутній
| CRCW25125R11FKEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| SIR122DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
товар відсутній
| SIR638ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BFC233868418 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.4 грн |
| 11+ | 31.83 грн |
| 39+ | 20.9 грн |
| 106+ | 19.79 грн |
| SMBJ60A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.92 грн |
| 55+ | 6.71 грн |
| 100+ | 5.95 грн |
| 160+ | 5.13 грн |
| 430+ | 4.85 грн |
| SMBJ60D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SI2392ADS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
товар відсутній
| SI4392ADY-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
| SI7172ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
| SI7322ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
| SIDR500EP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 421A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 421A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
товар відсутній
| SI7121ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIA811ADJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SQ2361AEES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 315mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 315mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
товар відсутній
| SQJ431AEP-T1_BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 1.5KE24A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 986 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.86 грн |
| 25+ | 19.72 грн |
| 50+ | 16.26 грн |
| 136+ | 15.36 грн |
| TDCG1060M |
|
Виробник: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Number of characters: 4
Colour: green
Luminosity: 2.8...4mcd
Common electrode: cathode
Dimensions: 40.2x12.8x7mm
Mounting: THT
Wavelength: 562...575nm
Operating current: 20mA
Operating voltage: 2...2.4V
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Number of characters: 4
Colour: green
Luminosity: 2.8...4mcd
Common electrode: cathode
Dimensions: 40.2x12.8x7mm
Mounting: THT
Wavelength: 562...575nm
Operating current: 20mA
Operating voltage: 2...2.4V
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.7 грн |
| 8+ | 103.79 грн |
| 22+ | 98.25 грн |
| PRV6SAABGYB25105KA |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Power: 1.5W
Tolerance: ±10%
Characteristics: linear
Mechanical rotation angle: 300°
Operating temperature: -55...125°C
Track material: cermet
Electrical rotation angle: 270°
Mechanical durability: 50000 cycles
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 3.17mm
Shaft length: 16mm
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Power: 1.5W
Tolerance: ±10%
Characteristics: linear
Mechanical rotation angle: 300°
Operating temperature: -55...125°C
Track material: cermet
Electrical rotation angle: 270°
Mechanical durability: 50000 cycles
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 3.17mm
Shaft length: 16mm
товар відсутній
| T18105KT10 |
|
Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1MΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1MΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
на замовлення 445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.89 грн |
| 5+ | 85.11 грн |
| 12+ | 71.27 грн |
| 31+ | 67.12 грн |