| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SI7806ADN-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
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| IRFI740GLCPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Pulsed drain current: 23A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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MBA02040C6808FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C Operating temperature: -55...155°C Mounting: THT Leads: axial Type of resistor: metal film Power: 0.4W Resistance: 6.8Ω Tolerance: ±1% Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Temperature coefficient: 50ppm/°C Max. operating voltage: 200V |
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MBB02070C6808FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Operating temperature: -55...155°C Mounting: THT Leads: axial Type of resistor: metal film Power: 0.6W Resistance: 6.8Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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MMB02070C6808FB200 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm Operating temperature: -55...155°C Mounting: SMD Conform to the norm: AEC Q200 Type of resistor: thin film Case: 0207 MELF Power: 0.4W Resistance: 6.8Ω Tolerance: ±1% Body dimensions: Ø2.2x5.8mm Temperature coefficient: 50ppm/°C Max. operating voltage: 300V |
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P600G-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 0.9V Reverse recovery time: 2.5µs |
на замовлення 1395 шт: термін постачання 21-30 дні (днів) |
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P600G-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 22A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 1.3V Leakage current: 1mA Reverse recovery time: 2.5µs |
на замовлення 2078 шт: термін постачання 21-30 дні (днів) |
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| SI2387DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Case: SOT23 Drain-source voltage: -80V Drain current: -3A On-state resistance: 242mΩ Type of transistor: P-MOSFET |
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PR01000104700JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 470Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 2370 шт: термін постачання 21-30 дні (днів) |
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PR01000104709JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial Type of resistor: power metal Mounting: THT Resistance: 47Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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PR01000104308FA500 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 4.3Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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PR01000104708JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 4.7Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
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| IRFR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR014TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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IRLR014PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2977 шт: термін постачання 21-30 дні (днів) |
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| IRLR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHFR014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Drain-source voltage: 60V Drain current: 4.9A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Mounting: SMD Case: DPAK; TO252 |
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| VO1263AAC | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV Case: Gull wing 8 |
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| RGL34D-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape |
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RGL34G-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 400V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
на замовлення 1140 шт: термін постачання 21-30 дні (днів) |
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RGL34J-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
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| RGL34KHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 800V Load current: 0.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Kind of package: reel; tape |
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| SIZ340ADT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH472DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 20A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerPAK® 1212-8 |
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VJ1206A102JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y104KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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| SISH101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 33W Kind of package: reel; tape Polarisation: unipolar Gate charge: 102nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -35A On-state resistance: 13mΩ Type of transistor: P-MOSFET |
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| SS33-E3/57T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
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| SS33-E3/9AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
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| GSIB2580N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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SMBJ10CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.3V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 3227 шт: термін постачання 21-30 дні (днів) |
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SMBJ12CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.5V Max. forward impulse current: 30.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 1209 шт: термін постачання 21-30 дні (днів) |
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K827PH | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 5µs Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@60mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
на замовлення 1935 шт: термін постачання 21-30 дні (днів) |
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SMBJ14CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.8V Max. forward impulse current: 26.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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ES2G-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 3717 шт: термін постачання 21-30 дні (днів) |
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ES2GHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 736 шт: термін постачання 21-30 дні (днів) |
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CRCW0805620KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C Power: 0.125W Resistance: 620kΩ Tolerance: ±5% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film |
на замовлення 3700 шт: термін постачання 21-30 дні (днів) |
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CRCW0805620RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 620Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 7900 шт: термін постачання 21-30 дні (днів) |
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| GSC00AD3301EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 33µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 6.3x5.7mm Height: 5.7mm |
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593D336X0025E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: E Case - inch: 2917 Case - mm: 7343 Tolerance: ±20% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
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593D336X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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593D336X9025E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 33µF Operating voltage: 25V DC Mounting: SMD Case: E Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 0.2Ω |
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GRC00PB3302ATNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Operating voltage: 100V DC Dimensions: 8x11.5mm Type of capacitor: electrolytic Capacitance: 33µF Service life: 2000h |
на замовлення 4700 шт: термін постачання 21-30 дні (днів) |
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MAL203859339E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 33µF Operating voltage: 100V DC Body dimensions: Ø8x11.5mm Terminal pitch: 3.5mm Tolerance: ±20% Service life: 2500h Operating temperature: -40...85°C |
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ZSC00AG3302AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 33µF Operating voltage: 100V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
на замовлення 1010 шт: термін постачання 21-30 дні (днів) |
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| IRF9610SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF9610STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF9620SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 40W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF9630STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W Kind of package: reel; tape Drain-source voltage: -200V Drain current: -6.5A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD Case: D2PAK; TO263 |
товар відсутній |
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| IRF9640LPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -11A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -11A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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M43P203KB40 | VISHAY |
Category: 19mm multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 20kΩ Power: 0.75W Tolerance: ±10% Mounting: THT Characteristics: linear Body dimensions: 19x6.4x4.8mm Track material: cermet Terminal pitch: 12.7x2.54mm Operating temperature: -55...125°C Number of electrical turns: 15 Potentiometer standard: 19mm IP rating: IP67 Min. insulation resistance: 1GΩ |
на замовлення 302 шт: термін постачання 21-30 дні (днів) |
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M64P203KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 20kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 20kΩ Power: 0.5W Tolerance: ±10% Mounting: THT Characteristics: linear Track material: cermet Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Number of mechanical turns: 23 ±5 Potentiometer standard: 3/8" IP rating: IP67 Torque: 1,5Ncm |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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| IRF9Z24STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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BZX85C20-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3735 шт: термін постачання 21-30 дні (днів) |
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BZX85C2V7-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 2.7V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 2.7V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7840 шт: термін постачання 21-30 дні (днів) |
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BZX85C30-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 30V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 30V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товар відсутній |
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BZX85C68-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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BZX85C75-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 75V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 75V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 9450 шт: термін постачання 21-30 дні (днів) |
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| VS-VSKT105/14 | VISHAY |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 105A; Ifmax: 235A; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 105A Max. load current: 235A Case: ADD-A-Pak; TO240AA Max. forward voltage: 1.8V Threshold on-voltage: 0.98V Max. forward impulse current: 2kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Manufacturer series: VS-VSKT105 |
товар відсутній |
| SI7806ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| IRFI740GLCPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MBA02040C6808FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Operating temperature: -55...155°C
Mounting: THT
Leads: axial
Type of resistor: metal film
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Operating temperature: -55...155°C
Mounting: THT
Leads: axial
Type of resistor: metal film
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
товар відсутній
| MBB02070C6808FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Operating temperature: -55...155°C
Mounting: THT
Leads: axial
Type of resistor: metal film
Power: 0.6W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Category: THT Resistors
Description: Resistor: metal film; THT; 6.8Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Operating temperature: -55...155°C
Mounting: THT
Leads: axial
Type of resistor: metal film
Power: 0.6W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.51 грн |
| 170+ | 2.08 грн |
| MMB02070C6808FB200 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 300V
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 6.8Ω; 400mW; ±1%; Ø2.2x5.8mm
Operating temperature: -55...155°C
Mounting: SMD
Conform to the norm: AEC Q200
Type of resistor: thin film
Case: 0207 MELF
Power: 0.4W
Resistance: 6.8Ω
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 300V
товар відсутній
| P600G-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
на замовлення 1395 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.39 грн |
| 8+ | 46.49 грн |
| 10+ | 39.9 грн |
| 25+ | 36.6 грн |
| 37+ | 21.88 грн |
| 102+ | 20.69 грн |
| P600G-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 22A; Ammo Pack; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 1.3V
Leakage current: 1mA
Reverse recovery time: 2.5µs
на замовлення 2078 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.39 грн |
| 8+ | 50 грн |
| 10+ | 46.63 грн |
| 25+ | 39.97 грн |
| 37+ | 21.88 грн |
| 102+ | 20.69 грн |
| SI2387DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -80V
Drain current: -3A
On-state resistance: 242mΩ
Type of transistor: P-MOSFET
товар відсутній
| PR01000104700JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 470Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 2370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.19 грн |
| 120+ | 3.09 грн |
| 140+ | 2.65 грн |
| 380+ | 2.22 грн |
| 1000+ | 2.19 грн |
| 1020+ | 2.1 грн |
| PR01000104709JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 47Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 47Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.76 грн |
| 110+ | 3.25 грн |
| 300+ | 2.45 грн |
| PR01000104308FA500 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.3Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 4.3Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.3Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.87 грн |
| 90+ | 4.07 грн |
| 100+ | 3.6 грн |
| 260+ | 3.22 грн |
| 710+ | 3.04 грн |
| PR01000104708JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 4.7Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 4.7Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.01 грн |
| 110+ | 3.42 грн |
| 300+ | 2.57 грн |
| 1000+ | 2.22 грн |
| IRFR014TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR014TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR014TRRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRLR014PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2977 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.06 грн |
| 14+ | 25.52 грн |
| 44+ | 18.86 грн |
| 121+ | 17.81 грн |
| IRLR014TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFR014TR-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Mounting: SMD
Case: DPAK; TO252
товар відсутній
| VO1263AAC |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
Case: Gull wing 8
товар відсутній
| RGL34D-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| RGL34G-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 400V
Load current: 0.5A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
на замовлення 1140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.62 грн |
| 25+ | 18.02 грн |
| 60+ | 13.12 грн |
| 165+ | 12.41 грн |
| RGL34J-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
товар відсутній
| RGL34KHE3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 250ns; DO213AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 800V
Load current: 0.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 4pF
Case: DO213AA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
товар відсутній
| SIZ340ADT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH472DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| VJ1206A102JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 3.45 грн |
| 300+ | 2.32 грн |
| VJ1206Y104KXXCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 25V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| SISH101DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
товар відсутній
| SS33-E3/57T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
товар відсутній
| SS33-E3/9AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
товар відсутній
| GSIB2580N-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| SMBJ10CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.3V; 35.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.3V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 3227 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.56 грн |
| 52+ | 6.8 грн |
| 100+ | 6.03 грн |
| 158+ | 5.2 грн |
| 433+ | 4.92 грн |
| SMBJ12CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.5V; 30.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Max. forward impulse current: 30.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 1209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.56 грн |
| 51+ | 6.94 грн |
| 100+ | 6.1 грн |
| 155+ | 5.31 грн |
| 426+ | 5.02 грн |
| K827PH |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 5µs
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@60mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
на замовлення 1935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 63.43 грн |
| 12+ | 30.29 грн |
| 25+ | 26.09 грн |
| 43+ | 19.49 грн |
| 116+ | 18.44 грн |
| 500+ | 18.16 грн |
| SMBJ14CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| ES2G-E3/52T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 3717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 11.18 грн |
| 47+ | 7.57 грн |
| 100+ | 6.66 грн |
| 137+ | 6.02 грн |
| 376+ | 5.69 грн |
| 3000+ | 5.61 грн |
| ES2GHE3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 736 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.86 грн |
| 13+ | 28.05 грн |
| 25+ | 24.75 грн |
| 37+ | 22.44 грн |
| 100+ | 22.09 грн |
| 101+ | 21.04 грн |
| CRCW0805620KJNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; -55÷155°C
Power: 0.125W
Resistance: 620kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
на замовлення 3700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.71 грн |
| 500+ | 0.79 грн |
| 1000+ | 0.53 грн |
| CRCW0805620RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 7900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.8 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.54 грн |
| 4000+ | 0.2 грн |
| 5000+ | 0.19 грн |
| GSC00AD3301EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x5.7mm
Height: 5.7mm
товар відсутній
| 593D336X0025E2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±20%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
товар відсутній
| 593D336X9025D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; D; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.79 грн |
| 593D336X9025E2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 33uF; 25VDC; SMD; E; 2917; ±10%; 200mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 33µF
Operating voltage: 25V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 0.2Ω
товар відсутній
| GRC00PB3302ATNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Operating voltage: 100V DC
Dimensions: 8x11.5mm
Type of capacitor: electrolytic
Capacitance: 33µF
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; ±20%; 2000h; -40÷105°C
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Operating voltage: 100V DC
Dimensions: 8x11.5mm
Type of capacitor: electrolytic
Capacitance: 33µF
Service life: 2000h
на замовлення 4700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.46 грн |
| 80+ | 4.45 грн |
| 110+ | 3.42 грн |
| 300+ | 2.75 грн |
| 500+ | 2.73 грн |
| 820+ | 2.6 грн |
| MAL203859339E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø8x11.5mm
Terminal pitch: 3.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 100VDC; Ø8x11.5mm; Pitch: 3.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø8x11.5mm
Terminal pitch: 3.5mm
Tolerance: ±20%
Service life: 2500h
Operating temperature: -40...85°C
товар відсутній
| ZSC00AG3302AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 33uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 33µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 24.65 грн |
| 50+ | 14.75 грн |
| 100+ | 8.39 грн |
| 260+ | 7.94 грн |
| IRF9610SPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9610STRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9620SPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9630STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: D2PAK; TO263
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Kind of package: reel; tape
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: D2PAK; TO263
товар відсутній
| IRF9640LPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -11A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -11A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| M43P203KB40 |
|
Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Mounting: THT
Characteristics: linear
Body dimensions: 19x6.4x4.8mm
Track material: cermet
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Number of electrical turns: 15
Potentiometer standard: 19mm
IP rating: IP67
Min. insulation resistance: 1GΩ
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Mounting: THT
Characteristics: linear
Body dimensions: 19x6.4x4.8mm
Track material: cermet
Terminal pitch: 12.7x2.54mm
Operating temperature: -55...125°C
Number of electrical turns: 15
Potentiometer standard: 19mm
IP rating: IP67
Min. insulation resistance: 1GΩ
на замовлення 302 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.02 грн |
| 5+ | 162.68 грн |
| 6+ | 143.05 грн |
| 16+ | 135.34 грн |
| 200+ | 131.13 грн |
| M64P203KB40 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 20kΩ
Power: 0.5W
Tolerance: ±10%
Mounting: THT
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 23 ±5
Potentiometer standard: 3/8"
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 20kΩ
Power: 0.5W
Tolerance: ±10%
Mounting: THT
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 23 ±5
Potentiometer standard: 3/8"
IP rating: IP67
Torque: 1,5Ncm
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.9 грн |
| 5+ | 147.96 грн |
| 7+ | 129.02 грн |
| 18+ | 122.01 грн |
| 100+ | 119.21 грн |
| IRF9Z24STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BZX85C20-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.51 грн |
| 110+ | 3.24 грн |
| 250+ | 2.9 грн |
| 320+ | 2.61 грн |
| 870+ | 2.46 грн |
| BZX85C2V7-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 2.7V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 2.7V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 2.7V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 2.7V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.81 грн |
| 130+ | 2.79 грн |
| 250+ | 2.49 грн |
| 370+ | 2.24 грн |
| 1000+ | 2.2 грн |
| 1020+ | 2.12 грн |
| 5000+ | 2.03 грн |
| BZX85C30-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX85C68-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.71 грн |
| 80+ | 4.21 грн |
| BZX85C75-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 75V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 75V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 75V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 75V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 9450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.27 грн |
| 130+ | 2.85 грн |
| 250+ | 2.55 грн |
| 360+ | 2.29 грн |
| 980+ | 2.16 грн |
| 5000+ | 2.08 грн |
| VS-VSKT105/14 |
|
Виробник: VISHAY
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 105A; Ifmax: 235A; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 105A
Max. load current: 235A
Case: ADD-A-Pak; TO240AA
Max. forward voltage: 1.8V
Threshold on-voltage: 0.98V
Max. forward impulse current: 2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Manufacturer series: VS-VSKT105
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 105A; Ifmax: 235A; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 105A
Max. load current: 235A
Case: ADD-A-Pak; TO240AA
Max. forward voltage: 1.8V
Threshold on-voltage: 0.98V
Max. forward impulse current: 2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Manufacturer series: VS-VSKT105
товар відсутній