| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIHB28N60EF-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHF28N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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| SIHG28N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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| SIHH28N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 76A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 98mΩ Mounting: SMD Gate charge: 129nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHP28N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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| SIHP38N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 27A; Idm: 126A; 313W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 27A Pulsed drain current: 126A Power dissipation: 313W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhanced |
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| SIHP38N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 11A; 313W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 11A Power dissipation: 313W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 189nC Kind of package: tube Kind of channel: enhanced |
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| SIHB068N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W Mounting: SMD Drain-source voltage: 600V Drain current: 26A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; TO263 Gate charge: 77nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 115A |
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| SIHF068N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 115A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 115A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced |
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| SIHG068N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 115A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced |
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| SIHH068N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 100A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 100A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHP068N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 115A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced |
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SMCJ26CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 30.4V; 35A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 30.4V Max. forward impulse current: 35A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
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MMSZ4683-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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MMSZ4684-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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MMSZ4686-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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MMSZ4689-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1525 шт: термін постачання 21-30 дні (днів) |
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MMSZ4693-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 7.5V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W |
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MMSZ4699-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2285 шт: термін постачання 21-30 дні (днів) |
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MMSZ4711-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode Mounting: SMD Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 27V Case: SOD123 Type of diode: Zener Semiconductor structure: single diode |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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MSS1P4-M3/89A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 1A; DO219AD; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.41V Case: DO219AD Kind of package: reel; tape Max. forward impulse current: 25A |
на замовлення 5380 шт: термін постачання 21-30 дні (днів) |
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MSS1P4HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; DO219AD; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: DO219AD Kind of package: reel; tape Max. forward impulse current: 25A |
на замовлення 3700 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2025 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242B-HE3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
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MMSZ5245B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 5063 шт: термін постачання 21-30 дні (днів) |
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MMSZ5245C-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1530 шт: термін постачання 21-30 дні (днів) |
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MMSZ5246B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 5775 шт: термін постачання 21-30 дні (днів) |
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MMSZ5264C-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 60V; SMD; reel,tape; SOD123; single diode Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Zener voltage: 60V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener |
на замовлення 8234 шт: термін постачання 21-30 дні (днів) |
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VLMS234V2BA-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; Mini PLCC2; red; 900÷1400(typ)-2240mcd; 2.3x1.3x1.4mm Type of diode: LED Mounting: SMD Case: Mini PLCC2 LED colour: red Luminosity: 900...1400(typ)-2240mcd Dimensions: 2.3x1.3x1.4mm Viewing angle: 60° LED current: 70mA Wavelength: 626...639nm Front: flat Operating voltage: 1.9...2.8V |
на замовлення 2122 шт: термін постачання 21-30 дні (днів) |
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VLMS334AABB-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60° Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 1120...1600(typ)-2800mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 70mA Wavelength: 626...639nm Front: flat Operating voltage: 1.9...2.8V |
на замовлення 5254 шт: термін постачання 21-30 дні (днів) |
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TLHY4400-MS12 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V Mounting: THT LED diameter: 3mm LED colour: yellow Type of diode: LED Wavelength: 581...594nm LED lens: diffused; yellow Luminosity: 1.6...10mcd LED current: 20mA Viewing angle: 30° Front: convex Terminal pitch: 2.54mm Operating voltage: 2.4...3V Number of terminals: 2 |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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TLHY4405-MS12 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V Mounting: THT LED diameter: 3mm LED colour: yellow Type of diode: LED Wavelength: 581...594nm LED lens: diffused; yellow Luminosity: 6.3...11mcd LED current: 10mA Viewing angle: 30° Front: convex Terminal pitch: 2.54mm Operating voltage: 2.4...3V Number of terminals: 2 |
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| TLVD4200-MSZ | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm Mounting: THT Type of diode: LED LED colour: red LED diameter: 3mm LED current: 10mA Luminosity: 40...130mlm Wavelength: 640nm Viewing angle: 85° Operating voltage: 1.8...2.2V LED lens: red Number of terminals: 2 Front: recessed Terminal pitch: 2.54mm |
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KBU8M-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 300A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1V |
на замовлення 344 шт: термін постачання 21-30 дні (днів) |
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| VSMY98545ADS | VISHAY |
Category: IR LEDs Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V Type of diode: IR transmitter LED diameter: 2.76mm Wavelength: 850nm Optical power: 1.34W Viewing angle: 45° Mounting: SMD Dimensions: 3.85x3.85x2.24mm LED current: 1A LED version: EMITER Operating voltage: 3.1...3.5V |
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BPW85A | VISHAY |
Category: Phototransistors Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent Type of photoelement: phototransistor LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent Mounting: THT |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
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CRCW040222R1FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C |
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CRCW040222R1FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
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CRCW060322R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
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CRCW120622R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 22.1Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 2065 шт: термін постачання 21-30 дні (днів) |
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MMA02040C2219FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 22.1Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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MRS25000C2219FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 22.1Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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BFC233660472 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 300V AC; 1kV DC Terminal pitch: 10mm Tolerance: ±20% Mounting: THT Body dimensions: 12.5x6x12mm |
на замовлення 3282 шт: термін постачання 21-30 дні (днів) |
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TCST2103 | VISHAY |
 Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 1mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 4mA |
на замовлення 2561 шт: термін постачання 21-30 дні (днів) |
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593D107X9010D2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 100µF Operating voltage: 10V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 100mΩ |
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593D107X9016E2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 100µF Operating voltage: 16V DC Mounting: SMD Case: E Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 100mΩ |
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WSR2R0100FEA | VISHAY |
Category: SMD resistors Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1% Type of resistor: thin film (Nichrome) Mounting: SMD Case - inch: 4527 Case - mm: 11470 Resistance: 10mΩ Power: 2W Tolerance: ±1% Body dimensions: 11.56x2.41x6.98mm |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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SQ2351ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2933 шт: термін постачання 21-30 дні (днів) |
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SI9933CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 Drain-source voltage: -20V Drain current: -4A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SO8 |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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| SIB912DK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 5A Power dissipation: 2W Case: PowerPAK® SC75 Gate-source voltage: ±8V On-state resistance: 216mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 18mΩ Type of transistor: N-MOSFET |
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SI9945BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 58mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
на замовлення 12863 шт: термін постачання 21-30 дні (днів) |
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Si4214DDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8 Mounting: SMD Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 19.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 |
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| SISH110DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 13.1A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 15.6A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET |
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| SISH108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 17.6A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET |
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| SISH112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SI5935CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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Si4228DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 50A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| SIHB28N60EF-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHF28N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG28N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHH28N60E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHP28N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP38N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 27A; Idm: 126A; 313W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 27A
Pulsed drain current: 126A
Power dissipation: 313W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 27A; Idm: 126A; 313W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 27A
Pulsed drain current: 126A
Power dissipation: 313W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP38N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 11A; 313W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 11A
Power dissipation: 313W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 189nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 11A; 313W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 11A
Power dissipation: 313W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 189nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHB068N60EF-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W
Mounting: SMD
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; TO263
Gate charge: 77nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 115A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W
Mounting: SMD
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; TO263
Gate charge: 77nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 115A
товар відсутній
| SIHF068N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 115A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 115A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 115A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 115A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG068N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHH068N60E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 100A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 100A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHP068N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SMCJ26CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30.4V; 35A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 30.4V
Max. forward impulse current: 35A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30.4V; 35A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 30.4V
Max. forward impulse current: 35A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
товар відсутній
| MMSZ4683-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.65 грн |
| 160+ | 2.27 грн |
| 500+ | 2.01 грн |
| 505+ | 1.65 грн |
| 1390+ | 1.56 грн |
| MMSZ4684-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.65 грн |
| 160+ | 2.27 грн |
| 490+ | 1.71 грн |
| 1340+ | 1.62 грн |
| MMSZ4686-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| MMSZ4689-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 2.73 грн |
| 160+ | 2.26 грн |
| 480+ | 1.75 грн |
| 1320+ | 1.65 грн |
| MMSZ4693-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
товар відсутній
| MMSZ4699-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.6 грн |
| 170+ | 2.17 грн |
| 495+ | 1.69 грн |
| 1355+ | 1.6 грн |
| MMSZ4711-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 27V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 27V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 85+ | 4.65 грн |
| MSS1P4-M3/89A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 1A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 1A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 25A
на замовлення 5380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12 грн |
| 65+ | 5.68 грн |
| 100+ | 5.03 грн |
| 200+ | 4.16 грн |
| 550+ | 3.93 грн |
| MSS1P4HM3-A/H |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; DO219AD; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; DO219AD; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 25A
на замовлення 3700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.24 грн |
| 60+ | 6.25 грн |
| 100+ | 5.54 грн |
| 180+ | 4.69 грн |
| 485+ | 4.44 грн |
| MMSZ5242B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2025 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.65 грн |
| 160+ | 2.27 грн |
| 480+ | 1.75 грн |
| 1315+ | 1.65 грн |
| MMSZ5242B-HE3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| MMSZ5245B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5063 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 13.94 грн |
| 41+ | 8.84 грн |
| 70+ | 5.15 грн |
| 126+ | 2.87 грн |
| 250+ | 2.16 грн |
| 500+ | 1.94 грн |
| 560+ | 1.48 грн |
| 1539+ | 1.4 грн |
| MMSZ5245C-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 3.78 грн |
| 115+ | 3.14 грн |
| 335+ | 2.53 грн |
| 915+ | 2.4 грн |
| MMSZ5246B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.6 грн |
| 175+ | 2.16 грн |
| 500+ | 1.77 грн |
| 1325+ | 1.67 грн |
| MMSZ5264C-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 60V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 60V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 60V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 60V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
на замовлення 8234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 4.08 грн |
| 110+ | 3.41 грн |
| 335+ | 2.53 грн |
| 910+ | 2.39 грн |
| VLMS234V2BA-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; Mini PLCC2; red; 900÷1400(typ)-2240mcd; 2.3x1.3x1.4mm
Type of diode: LED
Mounting: SMD
Case: Mini PLCC2
LED colour: red
Luminosity: 900...1400(typ)-2240mcd
Dimensions: 2.3x1.3x1.4mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
Category: SMD colour LEDs
Description: LED; SMD; Mini PLCC2; red; 900÷1400(typ)-2240mcd; 2.3x1.3x1.4mm
Type of diode: LED
Mounting: SMD
Case: Mini PLCC2
LED colour: red
Luminosity: 900...1400(typ)-2240mcd
Dimensions: 2.3x1.3x1.4mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
на замовлення 2122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.64 грн |
| 22+ | 17.76 грн |
| 84+ | 10.06 грн |
| 228+ | 9.49 грн |
| 1000+ | 9.2 грн |
| VLMS334AABB-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 1120...1600(typ)-2800mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 1120...1600(typ)-2800mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
на замовлення 5254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.42 грн |
| 22+ | 17.68 грн |
| 74+ | 11.43 грн |
| 100+ | 10.86 грн |
| 202+ | 10.78 грн |
| 500+ | 10.35 грн |
| TLHY4400-MS12 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 1.6...10mcd
LED current: 20mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
Category: THT LEDs Round
Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 1.6...10mcd
LED current: 20mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.45 грн |
| 20+ | 19.34 грн |
| 50+ | 12.15 грн |
| 94+ | 9.06 грн |
| 250+ | 8.55 грн |
| 1000+ | 8.27 грн |
| TLHY4405-MS12 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 6.3...11mcd
LED current: 10mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
Category: THT LEDs Round
Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 6.3...11mcd
LED current: 10mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
товар відсутній
| TLVD4200-MSZ |
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm
Mounting: THT
Type of diode: LED
LED colour: red
LED diameter: 3mm
LED current: 10mA
Luminosity: 40...130mlm
Wavelength: 640nm
Viewing angle: 85°
Operating voltage: 1.8...2.2V
LED lens: red
Number of terminals: 2
Front: recessed
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm
Mounting: THT
Type of diode: LED
LED colour: red
LED diameter: 3mm
LED current: 10mA
Luminosity: 40...130mlm
Wavelength: 640nm
Viewing angle: 85°
Operating voltage: 1.8...2.2V
LED lens: red
Number of terminals: 2
Front: recessed
Terminal pitch: 2.54mm
товар відсутній
| KBU8M-E4/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 300A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 300A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
на замовлення 344 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.35 грн |
| 5+ | 115.74 грн |
| 10+ | 88.42 грн |
| 27+ | 84.11 грн |
| VSMY98545ADS |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V
Type of diode: IR transmitter
LED diameter: 2.76mm
Wavelength: 850nm
Optical power: 1.34W
Viewing angle: 45°
Mounting: SMD
Dimensions: 3.85x3.85x2.24mm
LED current: 1A
LED version: EMITER
Operating voltage: 3.1...3.5V
Category: IR LEDs
Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V
Type of diode: IR transmitter
LED diameter: 2.76mm
Wavelength: 850nm
Optical power: 1.34W
Viewing angle: 45°
Mounting: SMD
Dimensions: 3.85x3.85x2.24mm
LED current: 1A
LED version: EMITER
Operating voltage: 3.1...3.5V
товар відсутній
| BPW85A |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Mounting: THT
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Mounting: THT
на замовлення 301 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.84 грн |
| 14+ | 27.25 грн |
| 59+ | 14.45 грн |
| 161+ | 13.66 грн |
| CRCW040222R1FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
товар відсутній
| CRCW040222R1FKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.94 грн |
| CRCW060322R1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
товар відсутній
| CRCW120622R1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 2065 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| MMA02040C2219FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній
| MRS25000C2219FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| BFC233660472 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x6x12mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x6x12mm
на замовлення 3282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.16 грн |
| 17+ | 21.28 грн |
| 63+ | 13.3 грн |
| 174+ | 12.58 грн |
| TCST2103 | |
|
Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
на замовлення 2561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.29 грн |
| 10+ | 49.32 грн |
| 23+ | 37.24 грн |
| 62+ | 35.23 грн |
| 1020+ | 34.15 грн |
| 593D107X9010D2WE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
товар відсутній
| 593D107X9016E2WE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
товар відсутній
| WSR2R0100FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
на замовлення 548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.64 грн |
| 8+ | 45.15 грн |
| 30+ | 28.97 грн |
| 80+ | 27.39 грн |
| SQ2351ES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2933 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 48.77 грн |
| 18+ | 20.99 грн |
| 25+ | 18.83 грн |
| 58+ | 14.45 грн |
| 158+ | 13.66 грн |
| SI9933CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.71 грн |
| 44+ | 19.29 грн |
| 121+ | 18.23 грн |
| SIB912DK-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI9926CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
товар відсутній
| SI9945BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
на замовлення 12863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.45 грн |
| 7+ | 59.09 грн |
| 22+ | 38.39 грн |
| 61+ | 36.3 грн |
| 2500+ | 35.37 грн |
| Si4214DDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
товар відсутній
| SISH110DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH116DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH106DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
товар відсутній
| SISH108DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| SISH112DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI5935CDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| Si4228DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній