| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VLMS334AABB-GS08 | VISHAY |
 Category: SMD colour LEDsDescription: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60° Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 1120...1600(typ)-2800mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 70mA Wavelength: 626...639nm Front: flat Operating voltage: 1.9...2.8V |
на замовлення 5254 шт: термін постачання 21-30 дні (днів) |
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TLHY4400-MS12 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V Mounting: THT LED diameter: 3mm LED colour: yellow Type of diode: LED Wavelength: 581...594nm LED lens: diffused; yellow Luminosity: 1.6...10mcd LED current: 20mA Viewing angle: 30° Front: convex Terminal pitch: 2.54mm Operating voltage: 2.4...3V Number of terminals: 2 |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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TLHY4405-MS12 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V Mounting: THT LED diameter: 3mm LED colour: yellow Type of diode: LED Wavelength: 581...594nm LED lens: diffused; yellow Luminosity: 6.3...11mcd LED current: 10mA Viewing angle: 30° Front: convex Terminal pitch: 2.54mm Operating voltage: 2.4...3V Number of terminals: 2 |
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| TLVD4200-MSZ | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm Mounting: THT Type of diode: LED LED colour: red LED diameter: 3mm LED current: 10mA Luminosity: 40...130mlm Wavelength: 640nm Viewing angle: 85° Operating voltage: 1.8...2.2V LED lens: red Number of terminals: 2 Front: recessed Terminal pitch: 2.54mm |
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KBU8M-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 300A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1V |
на замовлення 344 шт: термін постачання 21-30 дні (днів) |
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| VSMY98545ADS | VISHAY |
Category: IR LEDs Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V Type of diode: IR transmitter LED diameter: 2.76mm Wavelength: 850nm Optical power: 1.34W Viewing angle: 45° Mounting: SMD Dimensions: 3.85x3.85x2.24mm LED current: 1A LED version: EMITER Operating voltage: 3.1...3.5V |
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BPW85A | VISHAY |
Category: Phototransistors Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent Type of photoelement: phototransistor LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent Mounting: THT |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
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CRCW040222R1FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C |
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CRCW040222R1FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
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CRCW060322R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
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CRCW120622R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 22.1Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 2065 шт: термін постачання 21-30 дні (днів) |
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MMA02040C2219FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 22.1Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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MRS25000C2219FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 22.1Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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BFC233660472 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 300V AC; 1kV DC Terminal pitch: 10mm Tolerance: ±20% Mounting: THT Body dimensions: 12.5x6x12mm |
на замовлення 3282 шт: термін постачання 21-30 дні (днів) |
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TCST2103 | VISHAY |
 Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 1mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 4mA |
на замовлення 2561 шт: термін постачання 21-30 дні (днів) |
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593D107X9010D2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: D Capacitance: 100µF Operating voltage: 10V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
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593D107X9016E2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: E Capacitance: 100µF Operating voltage: 16V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
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WSR2R0100FEA | VISHAY |
Category: SMD resistors Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1% Type of resistor: thin film (Nichrome) Mounting: SMD Case - inch: 4527 Case - mm: 11470 Resistance: 10mΩ Power: 2W Tolerance: ±1% Body dimensions: 11.56x2.41x6.98mm |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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SQ2351ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2933 шт: термін постачання 21-30 дні (днів) |
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SI9933CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 Drain-source voltage: -20V Drain current: -4A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SO8 |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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| SIB912DK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 5A Power dissipation: 2W Case: PowerPAK® SC75 Gate-source voltage: ±8V On-state resistance: 216mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 18mΩ Type of transistor: N-MOSFET |
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SI9945BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 58mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
на замовлення 12863 шт: термін постачання 21-30 дні (днів) |
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Si4214DDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8 Mounting: SMD Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 19.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 |
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| SISH110DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 13.1A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 15.6A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET |
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| SISH108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 17.6A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET |
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| SISH112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI5935CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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Si4228DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 50A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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P6SMB36CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB100A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: bidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: bidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: bidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: bidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB300A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 1.45A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB300A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 1.45A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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M24S4FF130KT30 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C Body dimensions: Ø1.5x3.6mm Temperature coefficient: 50ppm/°C Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C Type of resistor: thin film Case: 0204 MiniMELF Power: 0.4W Resistance: 1.3Ω Tolerance: ±1% |
на замовлення 1325 шт: термін постачання 21-30 дні (днів) |
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BYV28-050-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3.5A Max. load current: 25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 30ns |
на замовлення 2466 шт: термін постачання 21-30 дні (днів) |
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BYV28-150-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3.5A Max. load current: 25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 30ns |
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BYV28-600-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.25V Leakage current: 0.15mA Reverse recovery time: 210ns |
на замовлення 1546 шт: термін постачання 21-30 дні (днів) |
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BYV28-200-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Max. off-state voltage: 200V Max. load current: 25A Max. forward voltage: 1.1V Load current: 3.5A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 90A Leakage current: 0.15mA Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Mounting: THT Case: SOD64 |
на замовлення 1419 шт: термін постачання 21-30 дні (днів) |
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T63YB472KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 4.7kΩ Power: 0.25W Number of mechanical turns: 15 ±5 Tolerance: ±10% Characteristics: linear Potentiometer series: T63YB Body dimensions: 6.8x6.8x5mm Potentiometer standard: 1/4" Mounting: THT Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Number of electrical turns: 13 ±2 Track material: cermet Terminal pitch: 2.5x2.5mm Max. operating voltage: 250V IP rating: IP67 Torque: 1Ncm |
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| PA16NP472MLB15 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Power: 0.25W Tolerance: ±20% Characteristics: logarithmic Operating temperature: -40...85°C Temperature coefficient: 500ppm/°C Track material: plastic IP rating: IP67 Mechanical durability: 50000 cycles Leads: solder lugs Shaft diameter: 16mm Mechanical rotation angle: 300° Electrical rotation angle: 270° Body material: plastic |
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SMBJ6.0A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 1065 шт: термін постачання 21-30 дні (днів) |
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| VLMS334AABB-GS08 |
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Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 1120...1600(typ)-2800mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 1120÷1600(typ)-2800mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 1120...1600(typ)-2800mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 70mA
Wavelength: 626...639nm
Front: flat
Operating voltage: 1.9...2.8V
на замовлення 5254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.42 грн |
| 22+ | 17.68 грн |
| 74+ | 11.43 грн |
| 100+ | 10.86 грн |
| 202+ | 10.78 грн |
| 500+ | 10.35 грн |
| TLHY4400-MS12 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 1.6...10mcd
LED current: 20mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
Category: THT LEDs Round
Description: LED; 3mm; yellow; 1.6÷10mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 1.6...10mcd
LED current: 20mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.45 грн |
| 20+ | 19.34 грн |
| 50+ | 12.15 грн |
| 94+ | 9.06 грн |
| 250+ | 8.55 грн |
| 1000+ | 8.27 грн |
| TLHY4405-MS12 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 6.3...11mcd
LED current: 10mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
Category: THT LEDs Round
Description: LED; 3mm; yellow; 6.3÷11mcd; 30°; Front: convex; 2.4÷3V
Mounting: THT
LED diameter: 3mm
LED colour: yellow
Type of diode: LED
Wavelength: 581...594nm
LED lens: diffused; yellow
Luminosity: 6.3...11mcd
LED current: 10mA
Viewing angle: 30°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Number of terminals: 2
товар відсутній
| TLVD4200-MSZ |
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm
Mounting: THT
Type of diode: LED
LED colour: red
LED diameter: 3mm
LED current: 10mA
Luminosity: 40...130mlm
Wavelength: 640nm
Viewing angle: 85°
Operating voltage: 1.8...2.2V
LED lens: red
Number of terminals: 2
Front: recessed
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; 3mm; red; 85°; Front: recessed; 1.8÷2.2V; Pitch: 2.54mm
Mounting: THT
Type of diode: LED
LED colour: red
LED diameter: 3mm
LED current: 10mA
Luminosity: 40...130mlm
Wavelength: 640nm
Viewing angle: 85°
Operating voltage: 1.8...2.2V
LED lens: red
Number of terminals: 2
Front: recessed
Terminal pitch: 2.54mm
товар відсутній
| KBU8M-E4/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 300A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 300A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
на замовлення 344 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.35 грн |
| 5+ | 115.74 грн |
| 10+ | 88.42 грн |
| 27+ | 84.11 грн |
| VSMY98545ADS |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V
Type of diode: IR transmitter
LED diameter: 2.76mm
Wavelength: 850nm
Optical power: 1.34W
Viewing angle: 45°
Mounting: SMD
Dimensions: 3.85x3.85x2.24mm
LED current: 1A
LED version: EMITER
Operating voltage: 3.1...3.5V
Category: IR LEDs
Description: IR transmitter; 2.76mm; 850nm; 1.34W; 45°; SMD; 1000mA; 3.1÷3.5V
Type of diode: IR transmitter
LED diameter: 2.76mm
Wavelength: 850nm
Optical power: 1.34W
Viewing angle: 45°
Mounting: SMD
Dimensions: 3.85x3.85x2.24mm
LED current: 1A
LED version: EMITER
Operating voltage: 3.1...3.5V
товар відсутній
| BPW85A |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Mounting: THT
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Mounting: THT
на замовлення 301 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.84 грн |
| 14+ | 27.25 грн |
| 59+ | 14.45 грн |
| 161+ | 13.66 грн |
| CRCW040222R1FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
товар відсутній
| CRCW040222R1FKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.94 грн |
| CRCW060322R1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
товар відсутній
| CRCW120622R1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 2065 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| MMA02040C2219FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній
| MRS25000C2219FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| BFC233660472 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x6x12mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x6x12mm
на замовлення 3282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.16 грн |
| 17+ | 21.28 грн |
| 63+ | 13.3 грн |
| 174+ | 12.58 грн |
| TCST2103 | |
|
Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
на замовлення 2561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.29 грн |
| 10+ | 49.32 грн |
| 23+ | 37.24 грн |
| 62+ | 35.23 грн |
| 1020+ | 34.15 грн |
| 593D107X9010D2WE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
товар відсутній
| 593D107X9016E2WE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
товар відсутній
| WSR2R0100FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
на замовлення 548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.64 грн |
| 8+ | 45.15 грн |
| 30+ | 28.97 грн |
| 80+ | 27.39 грн |
| SQ2351ES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2933 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 48.77 грн |
| 18+ | 20.99 грн |
| 25+ | 18.83 грн |
| 58+ | 14.45 грн |
| 158+ | 13.66 грн |
| SI9933CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.71 грн |
| 44+ | 19.29 грн |
| 121+ | 18.23 грн |
| SIB912DK-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI9926CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
товар відсутній
| SI9945BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
на замовлення 12863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.45 грн |
| 7+ | 59.09 грн |
| 22+ | 38.39 грн |
| 61+ | 36.3 грн |
| 2500+ | 35.37 грн |
| Si4214DDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
товар відсутній
| SISH110DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH116DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH106DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
товар відсутній
| SISH108DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| SISH112DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI5935CDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| Si4228DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P6SMB36CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB24CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB24CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB24CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB24CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB100A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB100CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
товар відсутній
| P6SMB300A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB300A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB30A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB30A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB30A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| M24S4FF130KT30 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Case: 0204 MiniMELF
Power: 0.4W
Resistance: 1.3Ω
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Case: 0204 MiniMELF
Power: 0.4W
Resistance: 1.3Ω
Tolerance: ±1%
на замовлення 1325 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 7.43 грн |
| 100+ | 4.2 грн |
| 500+ | 3 грн |
| BYV28-050-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
на замовлення 2466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72 грн |
| 8+ | 48.17 грн |
| 23+ | 36.66 грн |
| 63+ | 34.51 грн |
| BYV28-150-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
товар відсутній
| BYV28-600-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Leakage current: 0.15mA
Reverse recovery time: 210ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Leakage current: 0.15mA
Reverse recovery time: 210ns
на замовлення 1546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.55 грн |
| 7+ | 57.51 грн |
| 18+ | 48.17 грн |
| 25+ | 47.45 грн |
| 49+ | 45.29 грн |
| 500+ | 44.57 грн |
| BYV28-200-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Max. off-state voltage: 200V
Max. load current: 25A
Max. forward voltage: 1.1V
Load current: 3.5A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 90A
Leakage current: 0.15mA
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Mounting: THT
Case: SOD64
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Max. off-state voltage: 200V
Max. load current: 25A
Max. forward voltage: 1.1V
Load current: 3.5A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 90A
Leakage current: 0.15mA
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Mounting: THT
Case: SOD64
на замовлення 1419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.77 грн |
| 7+ | 56.79 грн |
| 18+ | 47.22 грн |
| 49+ | 44.64 грн |
| 500+ | 43.85 грн |
| T63YB472KT20 |
|
Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 4.7kΩ
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T63YB
Body dimensions: 6.8x6.8x5mm
Potentiometer standard: 1/4"
Mounting: THT
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 4.7kΩ
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T63YB
Body dimensions: 6.8x6.8x5mm
Potentiometer standard: 1/4"
Mounting: THT
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 1Ncm
товар відсутній
| PA16NP472MLB15 |
|
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Power: 0.25W
Tolerance: ±20%
Characteristics: logarithmic
Operating temperature: -40...85°C
Temperature coefficient: 500ppm/°C
Track material: plastic
IP rating: IP67
Mechanical durability: 50000 cycles
Leads: solder lugs
Shaft diameter: 16mm
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Power: 0.25W
Tolerance: ±20%
Characteristics: logarithmic
Operating temperature: -40...85°C
Temperature coefficient: 500ppm/°C
Track material: plastic
IP rating: IP67
Mechanical durability: 50000 cycles
Leads: solder lugs
Shaft diameter: 16mm
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Body material: plastic
товар відсутній
| SMBJ6.0A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 1065 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.01 грн |
| 55+ | 6.97 грн |
| 100+ | 6.18 грн |
| 160+ | 5.3 грн |
| 435+ | 5.01 грн |