| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFBC20SPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263 Drain-source voltage: 600V Drain current: 1.4A On-state resistance: 4.4Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK; TO263 |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IRFBC30PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.3A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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IRFIBC40GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 834 шт: термін постачання 21-30 дні (днів) |
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IRFPC40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC Kind of package: tube Power dissipation: 150W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO247AC Drain-source voltage: 600V Drain current: 4.3A On-state resistance: 1.2Ω Type of transistor: N-MOSFET |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IRFPC50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IRFPC50PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 431 шт: термін постачання 21-30 дні (днів) |
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IRFPC60LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 64A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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MAL213664102E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 10V DC Body dimensions: Ø10x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 10000h Impedance: 62mΩ Operating temperature: -55...105°C Leads dimensions: L 5mm |
на замовлення 1232 шт: термін постачання 21-30 дні (днів) |
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VOD217T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-120%@1mA Collector-emitter voltage: 80V Case: SO8 Turn-on time: 3µs Turn-off time: 2.3µs |
товар відсутній |
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SMBJ22A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SMBJ22D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.8V Max. forward impulse current: 17.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
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SFH628A-2X018T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Mounting: SMD Collector-emitter voltage: 55V Turn-on time: 3.5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-200%@1mA Type of optocoupler: optocoupler Case: Gull wing 4 |
товар відсутній |
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SFH628A-3 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Mounting: THT Collector-emitter voltage: 55V Turn-on time: 3.5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-300%@1mA Type of optocoupler: optocoupler Case: DIP4 |
на замовлення 4081 шт: термін постачання 21-30 дні (днів) |
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SFH628A-4 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Mounting: THT Collector-emitter voltage: 55V Turn-on time: 6µs Turn-off time: 5.5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Type of optocoupler: optocoupler Case: DIP4 |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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SFH628A-4X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Mounting: THT Collector-emitter voltage: 55V Turn-on time: 6µs Turn-off time: 5.5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Type of optocoupler: optocoupler Case: DIP4 |
на замовлення 2040 шт: термін постачання 21-30 дні (днів) |
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VOL628A-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@1mA Collector-emitter voltage: 80V Case: SOP4L Turn-on time: 6µs Turn-off time: 4µs |
на замовлення 2664 шт: термін постачання 21-30 дні (днів) |
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ZMY13-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: MELF Semiconductor structure: single diode |
на замовлення 1265 шт: термін постачання 21-30 дні (днів) |
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T93YA104KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 100kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T93YA Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 3/8" Temperature coefficient: 100ppm/°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64W; 67W; 3296W IP rating: IP67 Torque: 1,5Ncm |
на замовлення 623 шт: термін постачання 21-30 дні (днів) |
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IRFB11N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
на замовлення 913 шт: термін постачання 21-30 дні (днів) |
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IRFB17N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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IRFD320PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.31A Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of channel: enhanced |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IRFR310PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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IRFR320PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1269 шт: термін постачання 21-30 дні (днів) |
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IRFBE20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.8A Pulsed drain current: 7.2A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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IRFBE30PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
на замовлення 507 шт: термін постачання 21-30 дні (днів) |
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IRFBE30SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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IRFIBE30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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IRFPE30PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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IRFPE40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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IRFPE50PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 438 шт: термін постачання 21-30 дні (днів) |
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| SISS10ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 86.8A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.95mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
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| BFC237524101 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm Mounting: THT Body dimensions: 5x13x14.5mm Terminal pitch: 10mm Operating temperature: -55...85°C Type of capacitor: polyester Capacitance: 0.1nF Operating voltage: 400V AC; 1kV DC Leads dimensions: L 0.6mm Tolerance: ±5% |
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MSS2P3-M3/89A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: DO219AD Kind of package: reel; tape Max. forward impulse current: 30A |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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MAL214658122E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1.2mF Operating voltage: 63V DC Body dimensions: Ø18x35mm Terminal pitch: 7.5mm Tolerance: ±20% Operating temperature: -40...125°C |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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CRCW120630R0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 30Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 9600 шт: термін постачання 21-30 дні (днів) |
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CRCW120630R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 30.1Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
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SI2305CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2066 шт: термін постачання 21-30 дні (днів) |
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SI2305CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1175 шт: термін постачання 21-30 дні (днів) |
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SI2301BDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2869 шт: термін постачання 21-30 дні (днів) |
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SI2301CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 6142 шт: термін постачання 21-30 дні (днів) |
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GBPC3510-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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S1A-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 5945 шт: термін постачання 21-30 дні (днів) |
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S1AFM-M3/6A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.47µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 7.9pF Case: DO214AC; SMA Max. forward voltage: 0.98V Max. forward impulse current: 35A Leakage current: 0.1mA Kind of package: reel; tape |
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ES1A-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape Mounting: SMD Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode |
на замовлення 6740 шт: термін постачання 21-30 дні (днів) |
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IHLP2525CZER150M8A | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 2.9A Manufacturer series: IHLP Inductance: 15µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 118mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
товар відсутній |
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IHLP2525CZER1R0M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Operating current: 11A Manufacturer series: IHLP Inductance: 1µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 9mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IHLP2525CZER1R5M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Operating current: 9A Manufacturer series: IHLP Inductance: 1.5µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 14mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IHLP2525CZER220M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 22µH Operating current: 2.9A Resistance: 128.9mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IHLP2525CZER2R2M01 | VISHAY |
 Category: SMD power inductorsDescription: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Operating current: 8A Manufacturer series: IHLP Inductance: 2.2µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 18mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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IHLP2525CZER3R3M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Operating current: 6A Manufacturer series: IHLP Inductance: 3.3µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 28mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
товар відсутній |
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IHLP2525CZER3R3M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 7A Manufacturer series: IHLP Inductance: 3.3µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 24.8mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
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IHLP2525CZER4R7M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 6A Manufacturer series: IHLP Inductance: 4.7µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 31.8mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
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IHLP2525CZER4R7M8A | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 4.7µH Operating current: 5.6A Resistance: 35.9mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
товар відсутній |
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IHLP2525CZER6R8M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 6.8µH Operating current: 5.5A Resistance: 44.6mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
товар відсутній |
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IHLP2525CZERR10M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 0.1µH Operating current: 32.5A Resistance: 1.5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
товар відсутній |
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IHLP2525CZERR22M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 23A Manufacturer series: IHLP Inductance: 0.22µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 2.5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
товар відсутній |
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IHLP2525CZERR47M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 17.5A Manufacturer series: IHLP Inductance: 0.47µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 4mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
товар відсутній |
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IHLP2525CZERR68M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Operating current: 15.5A Manufacturer series: IHLP Inductance: 0.68µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm |
товар відсутній |
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CRCW080597R6FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 97.6Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
товар відсутній |
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| TSMP1138 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
товар відсутній |
| IRFBC20SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Drain-source voltage: 600V
Drain current: 1.4A
On-state resistance: 4.4Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Drain-source voltage: 600V
Drain current: 1.4A
On-state resistance: 4.4Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.98 грн |
| 10+ | 45.72 грн |
| 21+ | 40.98 грн |
| IRFBC30PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.42 грн |
| 9+ | 43.64 грн |
| 10+ | 38.89 грн |
| 24+ | 35.23 грн |
| 50+ | 34.79 грн |
| 66+ | 33.07 грн |
| IRFIBC40GPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 834 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.06 грн |
| 4+ | 112.87 грн |
| 9+ | 95.61 грн |
| 25+ | 90.58 грн |
| 250+ | 86.99 грн |
| IRFPC40PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Kind of package: tube
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Drain-source voltage: 600V
Drain current: 4.3A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Kind of package: tube
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Drain-source voltage: 600V
Drain current: 4.3A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.64 грн |
| 5+ | 123.65 грн |
| 9+ | 94.89 грн |
| 25+ | 89.86 грн |
| IRFPC50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 185.03 грн |
| 5+ | 155.28 грн |
| 8+ | 118.62 грн |
| 20+ | 112.15 грн |
| IRFPC50PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 431 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.68 грн |
| 5+ | 145.93 грн |
| 8+ | 117.18 грн |
| 20+ | 110.71 грн |
| IRFPC60LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.93 грн |
| 5+ | 178.28 грн |
| 13+ | 168.22 грн |
| MAL213664102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 10V DC
Body dimensions: Ø10x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 62mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 10V DC
Body dimensions: Ø10x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 62mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
на замовлення 1232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.13 грн |
| 10+ | 41.62 грн |
| 24+ | 35.58 грн |
| 65+ | 33.64 грн |
| VOD217T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-120%@1mA
Collector-emitter voltage: 80V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-120%@1mA
Collector-emitter voltage: 80V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.3µs
товар відсутній
| SMBJ22A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.01 грн |
| 55+ | 6.97 грн |
| 100+ | 6.18 грн |
| 160+ | 5.34 грн |
| 435+ | 5.05 грн |
| SMBJ22D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SFH628A-2X018T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: SMD
Collector-emitter voltage: 55V
Turn-on time: 3.5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Type of optocoupler: optocoupler
Case: Gull wing 4
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: SMD
Collector-emitter voltage: 55V
Turn-on time: 3.5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Type of optocoupler: optocoupler
Case: Gull wing 4
товар відсутній
| SFH628A-3 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 3.5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Type of optocoupler: optocoupler
Case: DIP4
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 3.5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Type of optocoupler: optocoupler
Case: DIP4
на замовлення 4081 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.61 грн |
| 13+ | 28.32 грн |
| 25+ | 23.36 грн |
| 41+ | 20.85 грн |
| 100+ | 20.49 грн |
| 111+ | 19.77 грн |
| 500+ | 19.27 грн |
| SFH628A-4 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 6µs
Turn-off time: 5.5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Type of optocoupler: optocoupler
Case: DIP4
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 6µs
Turn-off time: 5.5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Type of optocoupler: optocoupler
Case: DIP4
на замовлення 539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.1 грн |
| 13+ | 28.61 грн |
| 25+ | 23.87 грн |
| 39+ | 21.64 грн |
| 100+ | 20.49 грн |
| 107+ | 20.42 грн |
| 500+ | 19.63 грн |
| SFH628A-4X016 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 6µs
Turn-off time: 5.5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Type of optocoupler: optocoupler
Case: DIP4
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Mounting: THT
Collector-emitter voltage: 55V
Turn-on time: 6µs
Turn-off time: 5.5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Type of optocoupler: optocoupler
Case: DIP4
на замовлення 2040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.52 грн |
| 12+ | 30.05 грн |
| 25+ | 24.59 грн |
| 37+ | 22.86 грн |
| 100+ | 21.85 грн |
| 101+ | 21.57 грн |
| 500+ | 20.7 грн |
| VOL628A-3X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@1mA
Collector-emitter voltage: 80V
Case: SOP4L
Turn-on time: 6µs
Turn-off time: 4µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@1mA
Collector-emitter voltage: 80V
Case: SOP4L
Turn-on time: 6µs
Turn-off time: 4µs
на замовлення 2664 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.06 грн |
| 13+ | 28.61 грн |
| 25+ | 23.72 грн |
| 37+ | 23.08 грн |
| 100+ | 21.06 грн |
| ZMY13-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
на замовлення 1265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.5 грн |
| 50+ | 7.54 грн |
| 100+ | 6.67 грн |
| 155+ | 5.51 грн |
| 415+ | 5.21 грн |
| T93YA104KT20 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
на замовлення 623 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 121.55 грн |
| 10+ | 81.95 грн |
| 15+ | 58.23 грн |
| 40+ | 55.35 грн |
| IRFB11N50APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 913 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.92 грн |
| 10+ | 68.29 грн |
| 13+ | 66.86 грн |
| 35+ | 62.54 грн |
| 50+ | 61.82 грн |
| 250+ | 61.11 грн |
| IRFB17N50LPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 231 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.43 грн |
| 8+ | 110.71 грн |
| 21+ | 104.96 грн |
| IRFD320PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.93 грн |
| 9+ | 43.71 грн |
| IRFR310PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.1 грн |
| 11+ | 33.5 грн |
| 25+ | 29.33 грн |
| 33+ | 25.74 грн |
| 91+ | 24.3 грн |
| IRFR320PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1269 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.39 грн |
| 12+ | 30.77 грн |
| 25+ | 27.03 грн |
| 35+ | 24.66 грн |
| 94+ | 23.29 грн |
| 300+ | 22.79 грн |
| IRFBE20PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.81 грн |
| 7+ | 53.92 грн |
| 10+ | 48.17 грн |
| 19+ | 46.01 грн |
| 50+ | 43.13 грн |
| IRFBE30PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 507 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.74 грн |
| 6+ | 65.42 грн |
| 10+ | 58.23 грн |
| 16+ | 53.2 грн |
| 44+ | 49.6 грн |
| IRFBE30SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.08 грн |
| 10+ | 86.27 грн |
| 27+ | 81.95 грн |
| 50+ | 81.23 грн |
| IRFIBE30GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.89 грн |
| 10+ | 84.11 грн |
| 12+ | 69.01 грн |
| 33+ | 65.42 грн |
| IRFPE30PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFPE40PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.77 грн |
| 5+ | 148.81 грн |
| 8+ | 120.05 грн |
| 20+ | 113.58 грн |
| IRFPE50PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 438 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.09 грн |
| 5+ | 159.59 грн |
| 7+ | 138.74 грн |
| 17+ | 130.84 грн |
| SISS10ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BFC237524101 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm
Mounting: THT
Body dimensions: 5x13x14.5mm
Terminal pitch: 10mm
Operating temperature: -55...85°C
Type of capacitor: polyester
Capacitance: 0.1nF
Operating voltage: 400V AC; 1kV DC
Leads dimensions: L 0.6mm
Tolerance: ±5%
Category: THT Film Capacitors
Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm
Mounting: THT
Body dimensions: 5x13x14.5mm
Terminal pitch: 10mm
Operating temperature: -55...85°C
Type of capacitor: polyester
Capacitance: 0.1nF
Operating voltage: 400V AC; 1kV DC
Leads dimensions: L 0.6mm
Tolerance: ±5%
товар відсутній
| MSS2P3-M3/89A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: DO219AD
Kind of package: reel; tape
Max. forward impulse current: 30A
на замовлення 2300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.15 грн |
| 70+ | 5.29 грн |
| 100+ | 4.68 грн |
| 210+ | 4.06 грн |
| 575+ | 3.84 грн |
| MAL214658122E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1.2mF
Operating voltage: 63V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1.2mF
Operating voltage: 63V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...125°C
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 464.51 грн |
| 5+ | 182.58 грн |
| 13+ | 172.62 грн |
| CRCW120630R0FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 9600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| 2300+ | 0.37 грн |
| 5000+ | 0.33 грн |
| CRCW120630R1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 30.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 30.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| SI2305CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 12.85 грн |
| 33+ | 11.07 грн |
| 89+ | 9.49 грн |
| 245+ | 8.91 грн |
| SI2305CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.71 грн |
| 95+ | 9.2 грн |
| 255+ | 8.7 грн |
| SI2301BDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.19 грн |
| 16+ | 23.36 грн |
| 25+ | 20.49 грн |
| 80+ | 10.5 грн |
| 219+ | 9.92 грн |
| SI2301CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 6142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 11.46 грн |
| 39+ | 9.35 грн |
| 100+ | 8.41 грн |
| 113+ | 7.49 грн |
| 309+ | 7.08 грн |
| 3000+ | 6.97 грн |
| GBPC3510-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
на замовлення 332 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240 грн |
| 3+ | 199.85 грн |
| 6+ | 153.12 грн |
| 16+ | 144.5 грн |
| S1A-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 5945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.56 грн |
| 137+ | 2.64 грн |
| 250+ | 2.33 грн |
| 406+ | 2.02 грн |
| 1116+ | 1.91 грн |
| S1AFM-M3/6A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.47µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 7.9pF
Case: DO214AC; SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 35A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.47µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 7.9pF
Case: DO214AC; SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 35A
Leakage current: 0.1mA
Kind of package: reel; tape
товар відсутній
| ES1A-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
на замовлення 6740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 6.58 грн |
| 100+ | 4.41 грн |
| 250+ | 3.37 грн |
| 687+ | 3.19 грн |
| IHLP2525CZER150M8A |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 2.9A
Manufacturer series: IHLP
Inductance: 15µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 118mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 2.9A
Manufacturer series: IHLP
Inductance: 15µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 118mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZER1R0M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 11A
Manufacturer series: IHLP
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 11A
Manufacturer series: IHLP
Inductance: 1µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.55 грн |
| 10+ | 53.92 грн |
| IHLP2525CZER1R5M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 9A
Manufacturer series: IHLP
Inductance: 1.5µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 14mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 9A
Manufacturer series: IHLP
Inductance: 1.5µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 14mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.45 грн |
| 10+ | 46.22 грн |
| 25+ | 33.93 грн |
| IHLP2525CZER220M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 22µH
Operating current: 2.9A
Resistance: 128.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 22µH
Operating current: 2.9A
Resistance: 128.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.81 грн |
| 10+ | 58.95 грн |
| 21+ | 41.7 грн |
| IHLP2525CZER2R2M01 | |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 8A
Manufacturer series: IHLP
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 18mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 8A
Manufacturer series: IHLP
Inductance: 2.2µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 18mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.45 грн |
| 10+ | 46.37 грн |
| 26+ | 32.71 грн |
| 71+ | 30.91 грн |
| IHLP2525CZER3R3M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 6A
Manufacturer series: IHLP
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 28mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Operating current: 6A
Manufacturer series: IHLP
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 28mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZER3R3M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 7A
Manufacturer series: IHLP
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 24.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 7A
Manufacturer series: IHLP
Inductance: 3.3µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 24.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZER4R7M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 6A
Manufacturer series: IHLP
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 31.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 6A
Manufacturer series: IHLP
Inductance: 4.7µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 31.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZER4R7M8A |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 5.6A
Resistance: 35.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 5.6A
Resistance: 35.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| IHLP2525CZER6R8M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 6.8µH
Operating current: 5.5A
Resistance: 44.6mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 6.8µH
Operating current: 5.5A
Resistance: 44.6mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| IHLP2525CZERR10M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.1µH
Operating current: 32.5A
Resistance: 1.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.1µH
Operating current: 32.5A
Resistance: 1.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| IHLP2525CZERR22M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 23A
Manufacturer series: IHLP
Inductance: 0.22µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 2.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 23A
Manufacturer series: IHLP
Inductance: 0.22µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 2.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZERR47M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 17.5A
Manufacturer series: IHLP
Inductance: 0.47µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 4mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 17.5A
Manufacturer series: IHLP
Inductance: 0.47µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 4mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| IHLP2525CZERR68M01 | |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 15.5A
Manufacturer series: IHLP
Inductance: 0.68µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Operating current: 15.5A
Manufacturer series: IHLP
Inductance: 0.68µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
товар відсутній
| CRCW080597R6FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 97.6Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 97.6Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній