| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SI5419DU-T1-GE3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A Kind of package: reel; tape Pulsed drain current: -40A Power dissipation: 31W Gate charge: 45nC Polarisation: unipolar Technology: TrenchFET® Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD |
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| IRFI9610GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
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| IRFI9620GPBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3A Pulsed drain current: -12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
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IRFIZ48GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1179 шт: термін постачання 21-30 дні (днів) |
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SQD19P06-60L_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced |
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SQD40031EL_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced |
на замовлення 1972 шт: термін постачання 21-30 дні (днів) |
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SQD45P03-12_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced |
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IRFR9014PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
на замовлення 1861 шт: термін постачання 21-30 дні (днів) |
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IRFR9214PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -1.7A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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SUD19P06-60-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.19A Power dissipation: 2.3W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IRFR9110TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -2A |
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IRFU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1835 шт: термін постачання 21-30 дні (днів) |
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VJ0402A560FXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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VJ0402Q560JXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 25V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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VJ0603A560GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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VJ0603A560JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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VJ1206A560FXCAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±1%; SMD; 1206 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206A560JXCCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206A560JXGTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 1kV; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 1kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206A560KXECW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 500V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 500V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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| VLMU35CR40-275-120 | VISHAY |
Category: UV LEDs Description: LED; UV-C; 60°; 250mA; λd: 265÷280nm; 5.2÷7.7V; SMD; 3.45x3.45x1.7mm Type of diode: LED LED colour: UV-C Viewing angle: 60° LED current: 250mA Wavelength: 265...280nm Operating voltage: 5.2...7.7V Mounting: SMD Dimensions: 3.45x3.45x1.7mm Optical power: 27.5...37mW LED lens: transparent Caution!: UV diodes emit harmful radiation to your eyes and skin. Use protective equipment when working with them. |
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P6SMB180A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 154V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 2.4A Case: SMB Leakage current: 1µA Technology: TransZorb® Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 180V |
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P6SMB180A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 154V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 2.4A Case: SMB Leakage current: 1µA Technology: TransZorb® Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 180V |
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P6SMB180A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 154V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 2.4A Case: SMB Leakage current: 1µA Technology: TransZorb® Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 180V |
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P6SMB180A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 154V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 2.4A Case: SMB Leakage current: 1µA Technology: TransZorb® Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 180V |
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MBB02070C1201FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 1.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 1.2kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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PR02000201201JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 1.2kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 1.2kΩ Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 1120 шт: термін постачання 21-30 дні (днів) |
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CRCW12063K32FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.32kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.32kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 10700 шт: термін постачання 21-30 дні (днів) |
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MAL211630101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 35VDC; Ø8.2x11mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 35V DC Body dimensions: Ø8.2x11mm Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
на замовлення 969 шт: термін постачання 21-30 дні (днів) |
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MAL211667101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø8.2x11mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 40V DC Body dimensions: Ø8.2x11mm Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
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MAL211674101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2.5mm Mounting: THT Operating temperature: -40...105°C Terminal pitch: 2.5mm Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 10V DC Service life: 2000h |
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| BFC233864102 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 1nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC Terminal pitch: 7.5mm Mounting: THT Body dimensions: 10x4x9mm Type of capacitor: polypropylene Capacitance: 1nF Operating voltage: 300V AC; 1kV DC Tolerance: ±20% |
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| IRFS9N60ATRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFSL9N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced |
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| SIHG039N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 199A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
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CRCW080528K0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 28kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 28kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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DG467DV-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NC; Ch: 1; TSOP6; 4.5÷20V,7÷36V; reel,tape Type of integrated circuit: analog switch Case: TSOP6 Mounting: SMD Supply voltage: 4.5...20V; 7...36V Number of channels: 1 Kind of package: reel; tape Output configuration: SPST-NC Resistance: 10Ω |
на замовлення 828 шт: термін постачання 21-30 дні (днів) |
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TCET1100 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Mounting: THT Manufacturer series: TCET1100 Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 3µs Case: DIP4 Turn-off time: 4.7µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 50-600%@5mA Kind of output: transistor |
на замовлення 1442 шт: термін постачання 21-30 дні (днів) |
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SMM02040C1008FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 1Ω; 250mW; ±1%; Ø1.4x3.6mm Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 1Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
на замовлення 2700 шт: термін постачання 21-30 дні (днів) |
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V10P10-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.574V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 180A |
на замовлення 5143 шт: термін постачання 21-30 дні (днів) |
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| SIHFR310-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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| SIHFR310TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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| SIHFU310-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Kind of package: tube Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar |
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| SIHFR9310-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHFR9310TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHFR9310TRL-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHFU9310-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
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| SUP70040E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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M64X503KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear Operating temperature: -55...155°C IP rating: IP67 Track material: cermet Kind of potentiometer: multiturn Mounting: THT Power: 0.5W Resistance: 50kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm |
товар відсутній |
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M64X502KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear Operating temperature: -55...155°C IP rating: IP67 Track material: cermet Kind of potentiometer: multiturn Mounting: THT Power: 0.5W Resistance: 5kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm |
товар відсутній |
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MAL213661102E3 | VISHAY |
 Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x31mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Impedance: 30mΩ Operating temperature: -55...105°C Leads dimensions: L 5mm |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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MBB02070C2008FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Operating temperature: -55...155°C Power: 0.6W Leads: axial Type of resistor: metal film Resistance: 2Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V |
товар відсутній |
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PR02000202008JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial Type of resistor: power metal Mounting: THT Resistance: 2Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
товар відсутній |
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M64X103KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 10kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Track material: cermet Operating temperature: -55...155°C Potentiometer standard: 3/8" Temperature coefficient: 100ppm/°C Number of mechanical turns: 23 ±5 IP rating: IP67 Torque: 1,5Ncm |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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SMM02040C5111FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 5.11kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
на замовлення 2902 шт: термін постачання 21-30 дні (днів) |
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MMA02040C5111FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 5.11kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 2674 шт: термін постачання 21-30 дні (днів) |
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| MRS25000C8874FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 8.87MΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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| SI7309DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A |
товар відсутній |
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| SI7309DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A |
товар відсутній |
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CRCW020147R0FNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C Power: 50mW Mounting: SMD Operating temperature: -55...155°C Case - mm: 0603 Case - inch: 0201 Type of resistor: thick film Resistance: 47Ω Tolerance: ±1% Max. operating voltage: 30V |
на замовлення 9200 шт: термін постачання 21-30 дні (днів) |
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| SI5419DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
товар відсутній
| IRFI9610GPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFI9620GPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFIZ48GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.95 грн |
| 5+ | 84.85 грн |
| 10+ | 75.73 грн |
| 14+ | 61.71 грн |
| 37+ | 58.2 грн |
| SQD19P06-60L_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
товар відсутній
| SQD40031EL_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
на замовлення 1972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.3 грн |
| 5+ | 96.77 грн |
| 12+ | 70.12 грн |
| 32+ | 66.62 грн |
| SQD45P03-12_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
товар відсутній
| IRFR9014PBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
на замовлення 1861 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.88 грн |
| 12+ | 31.13 грн |
| 25+ | 28.12 грн |
| 36+ | 22.72 грн |
| 98+ | 21.53 грн |
| 1500+ | 20.76 грн |
| IRFR9214PBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SUD19P06-60-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.39 грн |
| 8+ | 47.68 грн |
| IRFR9110TRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
товар відсутній
| IRFU110PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1835 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.15 грн |
| 15+ | 24.68 грн |
| 25+ | 21.25 грн |
| 39+ | 20.91 грн |
| 75+ | 19.42 грн |
| 300+ | 19 грн |
| VJ0402A560FXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| VJ0402Q560JXXCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| VJ0603A560GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0603A560JXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ1206A560FXCAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206A560JXCCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 200V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206A560JXGTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 1kV; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 1kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 1kV; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 1kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206A560KXECW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 500V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 500V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VLMU35CR40-275-120 |
|
Виробник: VISHAY
Category: UV LEDs
Description: LED; UV-C; 60°; 250mA; λd: 265÷280nm; 5.2÷7.7V; SMD; 3.45x3.45x1.7mm
Type of diode: LED
LED colour: UV-C
Viewing angle: 60°
LED current: 250mA
Wavelength: 265...280nm
Operating voltage: 5.2...7.7V
Mounting: SMD
Dimensions: 3.45x3.45x1.7mm
Optical power: 27.5...37mW
LED lens: transparent
Caution!: UV diodes emit harmful radiation to your eyes and skin. Use protective equipment when working with them.
Category: UV LEDs
Description: LED; UV-C; 60°; 250mA; λd: 265÷280nm; 5.2÷7.7V; SMD; 3.45x3.45x1.7mm
Type of diode: LED
LED colour: UV-C
Viewing angle: 60°
LED current: 250mA
Wavelength: 265...280nm
Operating voltage: 5.2...7.7V
Mounting: SMD
Dimensions: 3.45x3.45x1.7mm
Optical power: 27.5...37mW
LED lens: transparent
Caution!: UV diodes emit harmful radiation to your eyes and skin. Use protective equipment when working with them.
товар відсутній
| P6SMB180A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
товар відсутній
| P6SMB180A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
товар відсутній
| P6SMB180A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
товар відсутній
| P6SMB180A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 154V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 2.4A
Case: SMB
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 180V
товар відсутній
| MBB02070C1201FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 1.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 1.2kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 1.2kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 1.2kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.88 грн |
| PR02000201201JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 1120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.48 грн |
| 100+ | 5.06 грн |
| 240+ | 3.46 грн |
| 650+ | 3.27 грн |
| 1000+ | 3.15 грн |
| CRCW12063K32FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.32kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.32kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.32kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.32kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 10700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.22 грн |
| 500+ | 1.2 грн |
| 1000+ | 0.77 грн |
| 2300+ | 0.36 грн |
| 5000+ | 0.33 грн |
| MAL211630101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 35VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 35V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 35VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 35V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
на замовлення 969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.17 грн |
| 10+ | 50.7 грн |
| 27+ | 30.42 грн |
| 74+ | 28.76 грн |
| MAL211667101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 40V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 40VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 40V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
товар відсутній
| MAL211674101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2.5mm
Mounting: THT
Operating temperature: -40...105°C
Terminal pitch: 2.5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 10V DC
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø5x11mm; Pitch: 2.5mm
Mounting: THT
Operating temperature: -40...105°C
Terminal pitch: 2.5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 10V DC
Service life: 2000h
товар відсутній
| BFC233864102 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Terminal pitch: 7.5mm
Mounting: THT
Body dimensions: 10x4x9mm
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Terminal pitch: 7.5mm
Mounting: THT
Body dimensions: 10x4x9mm
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Tolerance: ±20%
товар відсутній
| IRFS9N60ATRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFSL9N60APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG039N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 199A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 199A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CRCW080528K0FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 28kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 28kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 28kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 28kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.8 грн |
| 500+ | 0.88 грн |
| DG467DV-T1-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; TSOP6; 4.5÷20V,7÷36V; reel,tape
Type of integrated circuit: analog switch
Case: TSOP6
Mounting: SMD
Supply voltage: 4.5...20V; 7...36V
Number of channels: 1
Kind of package: reel; tape
Output configuration: SPST-NC
Resistance: 10Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; TSOP6; 4.5÷20V,7÷36V; reel,tape
Type of integrated circuit: analog switch
Case: TSOP6
Mounting: SMD
Supply voltage: 4.5...20V; 7...36V
Number of channels: 1
Kind of package: reel; tape
Output configuration: SPST-NC
Resistance: 10Ω
на замовлення 828 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.37 грн |
| 9+ | 39.27 грн |
| 25+ | 34.64 грн |
| 28+ | 30.15 грн |
| 76+ | 28.05 грн |
| TCET1100 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Manufacturer series: TCET1100
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP4
Turn-off time: 4.7µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 50-600%@5mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Manufacturer series: TCET1100
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP4
Turn-off time: 4.7µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 50-600%@5mA
Kind of output: transistor
на замовлення 1442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.43 грн |
| 20+ | 17.53 грн |
| 50+ | 14.02 грн |
| 60+ | 13.52 грн |
| 165+ | 12.78 грн |
| 1000+ | 12.62 грн |
| SMM02040C1008FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1Ω; 250mW; ±1%; Ø1.4x3.6mm
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1Ω; 250mW; ±1%; Ø1.4x3.6mm
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
на замовлення 2700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.86 грн |
| 500+ | 1.45 грн |
| 700+ | 1.19 грн |
| 2000+ | 1.12 грн |
| V10P10-M3/86A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.574V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.574V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 180A
на замовлення 5143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.13 грн |
| 14+ | 25.8 грн |
| 25+ | 22.79 грн |
| 42+ | 19.77 грн |
| 114+ | 18.7 грн |
| SIHFR310-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| SIHFR310TR-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| SIHFU310-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Mounting: THT
Case: IPAK; TO251
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Mounting: THT
Case: IPAK; TO251
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 400V
Drain current: 1.1A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
товар відсутній
| SIHFR9310-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFR9310TR-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFR9310TRL-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFU9310-GE3 |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SUP70040E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| M64X503KB40 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 50kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 50kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
товар відсутній
| M64X502KB40 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 5kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 5kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
товар відсутній
| MAL213661102E3 | |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 30mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 30mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.12 грн |
| 5+ | 117.81 грн |
| 8+ | 103.78 грн |
| 22+ | 98.17 грн |
| MBB02070C2008FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Power: 0.6W
Leads: axial
Type of resistor: metal film
Resistance: 2Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Category: THT Resistors
Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Power: 0.6W
Leads: axial
Type of resistor: metal film
Resistance: 2Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
товар відсутній
| PR02000202008JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 2Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial
Type of resistor: power metal
Mounting: THT
Resistance: 2Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| M64X103KB40 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
на замовлення 194 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.93 грн |
| 5+ | 122.01 грн |
| 9+ | 96.07 грн |
| 24+ | 91.16 грн |
| SMM02040C5111FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
на замовлення 2902 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.38 грн |
| 500+ | 1.2 грн |
| 1000+ | 0.98 грн |
| MMA02040C5111FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.36 грн |
| 125+ | 3.01 грн |
| 500+ | 1.25 грн |
| MRS25000C8874FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 8.87MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 8.87MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| SI7309DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
товар відсутній
| SI7309DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
товар відсутній
| CRCW020147R0FNTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C
Power: 50mW
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 0603
Case - inch: 0201
Type of resistor: thick film
Resistance: 47Ω
Tolerance: ±1%
Max. operating voltage: 30V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C
Power: 50mW
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 0603
Case - inch: 0201
Type of resistor: thick film
Resistance: 47Ω
Tolerance: ±1%
Max. operating voltage: 30V
на замовлення 9200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.9 грн |
| 1000+ | 0.44 грн |
| 3800+ | 0.22 грн |