Продукція > VISHAY > Всі товари виробника VISHAY (291948) > Сторінка 665 з 4866

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IRFR110TRPBF IRFR110TRPBF VISHAY IRFR110PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR120PBF IRFR120PBF VISHAY IRFR120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2132 шт:
термін постачання 7-14 дні (днів)
4+69.92 грн
9+ 31.98 грн
25+ 27.22 грн
41+ 23.75 грн
112+ 22.46 грн
Мінімальне замовлення: 4
IRFR120TRLPBF VISHAY sihfr120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 7.7A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 3000 шт
товар відсутній
IRFR120TRPBF IRFR120TRPBF VISHAY IRFR120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 2000 шт
товар відсутній
IRFR120TRRPBF VISHAY sihfr120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 7.7A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 3000 шт
товар відсутній
IRFR1N60APBF IRFR1N60APBF VISHAY IRFR1N60A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 7-14 дні (днів)
5+62.75 грн
6+ 45.12 грн
25+ 37.96 грн
27+ 36.63 грн
74+ 34.96 грн
300+ 33.3 грн
Мінімальне замовлення: 5
IRFR1N60ATRLPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR1N60ATRPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR210PBF IRFR210PBF VISHAY IRFR210.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 600 шт:
термін постачання 7-14 дні (днів)
4+70.82 грн
7+ 39.42 грн
25+ 34.13 грн
37+ 26.14 грн
75+ 26.05 грн
102+ 24.72 грн
Мінімальне замовлення: 4
IRFR210TRLPBF VISHAY sihfr210.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR210TRPBF VISHAY sihfr210.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR214PBF VISHAY sihfr214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR214TRPBF VISHAY sihfr214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR220PBF IRFR220PBF VISHAY irfr220_IRFU220.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 312 шт:
термін постачання 7-14 дні (днів)
5+59.17 грн
7+ 37.69 грн
25+ 33.21 грн
38+ 25.31 грн
105+ 23.97 грн
Мінімальне замовлення: 5
IRFR220TRPBF IRFR220TRPBF VISHAY irfr220_IRFU220.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR220TRRPBF VISHAY sihfr220.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR224PBF IRFR224PBF VISHAY IRFR224.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; 42W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
Power dissipation: 42W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
кількість в упаковці: 1 шт
на замовлення 1723 шт:
термін постачання 7-14 дні (днів)
4+69.92 грн
7+ 42.36 грн
25+ 35.79 грн
32+ 29.97 грн
88+ 28.3 грн
Мінімальне замовлення: 4
IRFR224TRLPBF VISHAY sihfr224.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 42W
Kind of package: reel; tape
On-state resistance: 1.1Ω
Pulsed drain current: 15A
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
IRFR224TRPBF VISHAY sihfr224.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 42W
Kind of package: reel; tape
On-state resistance: 1.1Ω
Pulsed drain current: 15A
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 2000 шт
товар відсутній
IRFR310PBF IRFR310PBF VISHAY irfr310.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
5+59.17 грн
7+ 40.28 грн
25+ 33.96 грн
32+ 30.97 грн
75+ 30.88 грн
86+ 29.3 грн
300+ 28.47 грн
Мінімальне замовлення: 5
IRFR310TRLPBF VISHAY sihfr310.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 3000 шт
товар відсутній
IRFR310TRPBF VISHAY sihfr310.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 2000 шт
товар відсутній
IRFR320PBF IRFR320PBF VISHAY IRFR320PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1292 шт:
термін постачання 7-14 дні (днів)
4+69.92 грн
8+ 37 грн
25+ 31.3 грн
34+ 28.55 грн
93+ 27.05 грн
300+ 26.39 грн
Мінімальне замовлення: 4
IRFR320TRLPBF IRFR320TRLPBF VISHAY IRFU320PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1790 шт:
термін постачання 7-14 дні (днів)
4+75.3 грн
7+ 43.05 грн
25+ 37.79 грн
32+ 30.8 грн
86+ 29.13 грн
Мінімальне замовлення: 4
IRFR320TRPBF IRFR320TRPBF VISHAY IRFU320PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR320TRRPBF VISHAY sihfr320.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.1A; Idm: 12A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.1A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR420APBF IRFR420APBF VISHAY IRFR420A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; 83W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: tube
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
на замовлення 1207 шт:
термін постачання 7-14 дні (днів)
4+70.82 грн
6+ 51 грн
25+ 43.29 грн
28+ 35.79 грн
75+ 33.3 грн
Мінімальне замовлення: 4
IRFR420ATRLPBF VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 3.3A
Drain-source voltage: 500V
кількість в упаковці: 3000 шт
товар відсутній
IRFR420ATRPBF IRFR420ATRPBF VISHAY IRFR420A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 2000 шт
товар відсутній
IRFR420PBF IRFR420PBF VISHAY IRFR420PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 500V
Drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1988 шт:
термін постачання 7-14 дні (днів)
4+77.09 грн
7+ 40.97 грн
25+ 36.79 грн
31+ 31.52 грн
75+ 31.47 грн
85+ 29.8 грн
300+ 28.72 грн
Мінімальне замовлення: 4
IRFR420PBF-BE3 VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR420TRLPBF VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR420TRPBF IRFR420TRPBF VISHAY IRFR420PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR420TRRPBF VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR430APBF IRFR430APBF VISHAY IRFR430A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1378 шт:
термін постачання 7-14 дні (днів)
7+42.13 грн
25+ 38.29 грн
34+ 29.13 грн
92+ 27.47 грн
1500+ 26.14 грн
Мінімальне замовлення: 7
IRFR430ATRLPBF VISHAY sihfr430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR430ATRPBF VISHAY sihfr430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9010PBF VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9010TRLPBF VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9010TRPBF VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9014PBF IRFR9014PBF VISHAY IRFx9014.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2304 шт:
термін постачання 7-14 дні (днів)
4+70.01 грн
7+ 40.46 грн
25+ 35.13 грн
36+ 26.94 грн
98+ 25.46 грн
Мінімальне замовлення: 4
IRFR9014TRLPBF VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9014TRPBF IRFR9014TRPBF VISHAY IRFx9014.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9014TRPBF-BE3 VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9020PBF VISHAY sihfr902.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9020TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9020TRPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9024PBF IRFR9024PBF VISHAY IRFR9024PBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1690 шт:
термін постачання 7-14 дні (днів)
6+51.73 грн
25+ 46.94 грн
29+ 33.69 грн
80+ 31.85 грн
Мінімальне замовлення: 6
IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9024TRPBF IRFR9024TRPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9110PBF IRFR9110PBF VISHAY IRFR9110.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 204 шт:
термін постачання 7-14 дні (днів)
4+73.87 грн
7+ 38.81 грн
25+ 33.63 грн
40+ 24.59 грн
108+ 23.25 грн
Мінімальне замовлення: 4
IRFR9110TRLPBF VISHAY sihfr911.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9110TRPBF IRFR9110TRPBF VISHAY IRFR9110.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9120PBF IRFR9120PBF VISHAY IRFx9120.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1002 шт:
термін постачання 7-14 дні (днів)
4+70.82 грн
7+ 38.21 грн
25+ 33.21 грн
38+ 25.42 грн
104+ 24.03 грн
Мінімальне замовлення: 4
IRFR9120TRLPBF VISHAY sihfr912.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9120TRPBF IRFR9120TRPBF VISHAY IRFx9120.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9120TRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9210PBF IRFR9210PBF VISHAY IRFR9210.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9210TRLPBF VISHAY sihfr921.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; 1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: 1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9210TRPBF IRFR9210TRPBF VISHAY IRFR9210.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR110TRPBF IRFR110PBF.pdf
IRFR110TRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR120PBF IRFR120.pdf
IRFR120PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2132 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+69.92 грн
9+ 31.98 грн
25+ 27.22 грн
41+ 23.75 грн
112+ 22.46 грн
Мінімальне замовлення: 4
IRFR120TRLPBF sihfr120.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 7.7A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 3000 шт
товар відсутній
IRFR120TRPBF IRFR120.pdf
IRFR120TRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 2000 шт
товар відсутній
IRFR120TRRPBF sihfr120.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 7.7A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 3000 шт
товар відсутній
IRFR1N60APBF IRFR1N60A.pdf
IRFR1N60APBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
5+62.75 грн
6+ 45.12 грн
25+ 37.96 грн
27+ 36.63 грн
74+ 34.96 грн
300+ 33.3 грн
Мінімальне замовлення: 5
IRFR1N60ATRLPBF sihfr1n6.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR1N60ATRPBF sihfr1n6.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR210PBF IRFR210.pdf
IRFR210PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 600 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+70.82 грн
7+ 39.42 грн
25+ 34.13 грн
37+ 26.14 грн
75+ 26.05 грн
102+ 24.72 грн
Мінімальне замовлення: 4
IRFR210TRLPBF sihfr210.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR210TRPBF sihfr210.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR214PBF sihfr214.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR214TRPBF sihfr214.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR220PBF description irfr220_IRFU220.pdf
IRFR220PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 312 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
5+59.17 грн
7+ 37.69 грн
25+ 33.21 грн
38+ 25.31 грн
105+ 23.97 грн
Мінімальне замовлення: 5
IRFR220TRPBF irfr220_IRFU220.pdf
IRFR220TRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR220TRRPBF sihfr220.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR224PBF IRFR224.pdf
IRFR224PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; 42W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of package: tube
Power dissipation: 42W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
кількість в упаковці: 1 шт
на замовлення 1723 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+69.92 грн
7+ 42.36 грн
25+ 35.79 грн
32+ 29.97 грн
88+ 28.3 грн
Мінімальне замовлення: 4
IRFR224TRLPBF sihfr224.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 42W
Kind of package: reel; tape
On-state resistance: 1.1Ω
Pulsed drain current: 15A
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
IRFR224TRPBF sihfr224.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 42W
Kind of package: reel; tape
On-state resistance: 1.1Ω
Pulsed drain current: 15A
Gate charge: 14nC
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 2000 шт
товар відсутній
IRFR310PBF irfr310.pdf
IRFR310PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
5+59.17 грн
7+ 40.28 грн
25+ 33.96 грн
32+ 30.97 грн
75+ 30.88 грн
86+ 29.3 грн
300+ 28.47 грн
Мінімальне замовлення: 5
IRFR310TRLPBF sihfr310.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 3000 шт
товар відсутній
IRFR310TRPBF description sihfr310.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
кількість в упаковці: 2000 шт
товар відсутній
IRFR320PBF IRFR320PBF.pdf
IRFR320PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1292 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+69.92 грн
8+ 37 грн
25+ 31.3 грн
34+ 28.55 грн
93+ 27.05 грн
300+ 26.39 грн
Мінімальне замовлення: 4
IRFR320TRLPBF IRFU320PBF.pdf
IRFR320TRLPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1790 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+75.3 грн
7+ 43.05 грн
25+ 37.79 грн
32+ 30.8 грн
86+ 29.13 грн
Мінімальне замовлення: 4
IRFR320TRPBF IRFU320PBF.pdf
IRFR320TRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR320TRRPBF sihfr320.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.1A; Idm: 12A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.1A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR420APBF IRFR420A.pdf
IRFR420APBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; 83W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: tube
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
на замовлення 1207 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+70.82 грн
6+ 51 грн
25+ 43.29 грн
28+ 35.79 грн
75+ 33.3 грн
Мінімальне замовлення: 4
IRFR420ATRLPBF sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 3.3A
Drain-source voltage: 500V
кількість в упаковці: 3000 шт
товар відсутній
IRFR420ATRPBF IRFR420A.pdf
IRFR420ATRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 2000 шт
товар відсутній
IRFR420PBF IRFR420PBF.pdf
IRFR420PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 500V
Drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1988 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+77.09 грн
7+ 40.97 грн
25+ 36.79 грн
31+ 31.52 грн
75+ 31.47 грн
85+ 29.8 грн
300+ 28.72 грн
Мінімальне замовлення: 4
IRFR420PBF-BE3 sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR420TRLPBF sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR420TRPBF IRFR420PBF.pdf
IRFR420TRPBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR420TRRPBF sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR430APBF IRFR430A.pdf
IRFR430APBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1378 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
7+42.13 грн
25+ 38.29 грн
34+ 29.13 грн
92+ 27.47 грн
1500+ 26.14 грн
Мінімальне замовлення: 7
IRFR430ATRLPBF sihfr430.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR430ATRPBF sihfr430.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9010PBF sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9010TRLPBF sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9010TRPBF sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9014PBF IRFx9014.pdf
IRFR9014PBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2304 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+70.01 грн
7+ 40.46 грн
25+ 35.13 грн
36+ 26.94 грн
98+ 25.46 грн
Мінімальне замовлення: 4
IRFR9014TRLPBF sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9014TRPBF IRFx9014.pdf
IRFR9014TRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9014TRPBF-BE3 sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9020PBF description sihfr902.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9020TRLPBF sihfr902.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9020TRPBF sihfr902.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9024PBF IRFR9024PBF.pdf
IRFR9024PBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1690 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+51.73 грн
25+ 46.94 грн
29+ 33.69 грн
80+ 31.85 грн
Мінімальне замовлення: 6
IRFR9024TRLPBF sihfr902.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9024TRPBF sihfr902.pdf
IRFR9024TRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9110PBF IRFR9110.pdf
IRFR9110PBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 204 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+73.87 грн
7+ 38.81 грн
25+ 33.63 грн
40+ 24.59 грн
108+ 23.25 грн
Мінімальне замовлення: 4
IRFR9110TRLPBF sihfr911.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9110TRPBF IRFR9110.pdf
IRFR9110TRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9120PBF IRFx9120.pdf
IRFR9120PBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1002 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+70.82 грн
7+ 38.21 грн
25+ 33.21 грн
38+ 25.42 грн
104+ 24.03 грн
Мінімальне замовлення: 4
IRFR9120TRLPBF sihfr912.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9120TRPBF IRFx9120.pdf
IRFR9120TRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9120TRRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9210PBF IRFR9210.pdf
IRFR9210PBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9210TRLPBF sihfr921.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; 1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: 1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9210TRPBF IRFR9210.pdf
IRFR9210TRPBF
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
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