Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFR9210TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.2A Pulsed drain current: -7.6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 8.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IRFR9214PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -1.7A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFR9214TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRFR9214TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 280 шт: термін постачання 7-14 дні (днів) |
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IRFR9220TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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IRFR9220TRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFR9310PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2702 шт: термін постачання 7-14 дні (днів) |
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IRFR9310TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Kind of package: reel; tape Drain-source voltage: -400V Drain current: -1.1A On-state resistance: 7Ω Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -7.2A Mounting: SMD Case: DPAK; TO252 кількість в упаковці: 3000 шт |
товар відсутній |
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IRFR9310TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252 Kind of package: reel; tape Drain-source voltage: -400V Drain current: -1.1A On-state resistance: 7Ω Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK; TO252 кількість в упаковці: 1 шт |
на замовлення 2313 шт: термін постачання 7-14 дні (днів) |
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IRFRC20PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: tube Drain-source voltage: 600V Drain current: 1.3A On-state resistance: 4.4Ω Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 1960 шт: термін постачання 7-14 дні (днів) |
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IRFRC20TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRFRC20TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFRC20TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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IRFRC20TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRFS11N50APBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: SMD Gate charge: 52nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 205 шт: термін постачання 7-14 дні (днів) |
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IRFS9N60APBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 180 шт: термін постачання 7-14 дні (днів) |
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IRFS9N60ATRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFS9N60ATRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFSL11N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 190W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 688 шт: термін постачання 7-14 дні (днів) |
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IRFSL9N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU014PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFU024PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1835 шт: термін постачання 7-14 дні (днів) |
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IRFU120PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1309 шт: термін постачання 7-14 дні (днів) |
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IRFU1N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU210PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU214PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU220PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 538 шт: термін постачання 7-14 дні (днів) |
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IRFU310PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.1A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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IRFU320PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 116 шт: термін постачання 7-14 дні (днів) |
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IRFU420APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 10A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 83W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFU420PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3016 шт: термін постачання 7-14 дні (днів) |
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IRFU430APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 110W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9014PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 598 шт: термін постачання 7-14 дні (днів) |
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IRFU9020PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9024PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2276 шт: термін постачання 7-14 дні (днів) |
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IRFU9110PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.1A Pulsed drain current: -12A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9120PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9210PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9214PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFU9220PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFU9310PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2740 шт: термін постачання 7-14 дні (днів) |
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IRFUC20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 346 шт: термін постачання 7-14 дні (днів) |
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IRFZ10PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 40A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ14PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1112 шт: термін постачання 7-14 дні (днів) |
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IRFZ20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 15A Pulsed drain current: 60A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ24PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 983 шт: термін постачання 7-14 дні (днів) |
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IRFZ34PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 514 шт: термін постачання 7-14 дні (днів) |
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IRFZ44RPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ44SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ44STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFZ48PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ48RPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 395 шт: термін постачання 7-14 дні (днів) |
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IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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IRFZ48SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
IRFR9210TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.2A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9214PBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFR9214TRLPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9214TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9220PBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.61 грн |
7+ | 41.89 грн |
25+ | 35.65 грн |
30+ | 31.72 грн |
82+ | 29.98 грн |
300+ | 29.9 грн |
IRFR9220TRLPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9220TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFR9220TRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFR9310PBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2702 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.51 грн |
6+ | 46.58 грн |
25+ | 40.34 грн |
32+ | 30.56 грн |
86+ | 28.92 грн |
IRFR9310TRLPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance: 7Ω
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7.2A
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance: 7Ω
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7.2A
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 3000 шт
товар відсутній
IRFR9310TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance: 7Ω
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; DPAK,TO252
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance: 7Ω
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 1 шт
на замовлення 2313 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.08 грн |
6+ | 45.13 грн |
25+ | 38.45 грн |
31+ | 31.64 грн |
83+ | 29.91 грн |
IRFRC20PBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 1.3A
On-state resistance: 4.4Ω
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 1.3A
On-state resistance: 4.4Ω
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1960 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.47 грн |
7+ | 41.12 грн |
25+ | 35.24 грн |
31+ | 32.04 грн |
75+ | 31.63 грн |
83+ | 30.4 грн |
300+ | 29.9 грн |
IRFRC20TRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFRC20TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFRC20TRPBF-BE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IRFRC20TRRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFS11N50APBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 205 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 180.47 грн |
3+ | 156.11 грн |
9+ | 113.37 грн |
24+ | 107.62 грн |
IRFS9N60APBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 180.47 грн |
3+ | 156.11 грн |
9+ | 110.9 грн |
24+ | 104.33 грн |
IRFS9N60ATRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFS9N60ATRRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFSL11N50APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 688 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 164.55 грн |
3+ | 143.32 грн |
10+ | 101.04 грн |
27+ | 95.29 грн |
IRFSL9N60APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Pulsed drain current: 37A
Power dissipation: 170W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU014PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU024PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU110PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1835 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 68.12 грн |
9+ | 30.03 грн |
25+ | 24.89 грн |
39+ | 24.5 грн |
75+ | 22.76 грн |
300+ | 22.26 грн |
IRFU120PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1309 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.47 грн |
6+ | 47.43 грн |
25+ | 40.42 грн |
28+ | 35.01 грн |
75+ | 33.1 грн |
IRFU1N60APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU210PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU214PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU220PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 538 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.77 грн |
8+ | 34.46 грн |
25+ | 29.49 грн |
38+ | 25.5 грн |
103+ | 24.11 грн |
IRFU310PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 88.47 грн |
5+ | 51.19 грн |
25+ | 31.3 грн |
36+ | 27.12 грн |
97+ | 25.64 грн |
IRFU320PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 116 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.39 грн |
6+ | 45.38 грн |
25+ | 40.58 грн |
27+ | 35.32 грн |
74+ | 33.68 грн |
300+ | 32.78 грн |
IRFU420APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 83W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 83W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IRFU420PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3016 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.2 грн |
8+ | 34.81 грн |
25+ | 31.22 грн |
36+ | 27.11 грн |
98+ | 25.47 грн |
300+ | 24.97 грн |
IRFU430APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9014PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 598 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 69.89 грн |
8+ | 34.46 грн |
25+ | 29.33 грн |
37+ | 26.05 грн |
101+ | 24.63 грн |
300+ | 24.56 грн |
IRFU9020PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9024PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2276 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.65 грн |
25+ | 32.08 грн |
40+ | 24.28 грн |
108+ | 22.96 грн |
750+ | 22.1 грн |
IRFU9110PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9120PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9210PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9214PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9220PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFU9310PBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2740 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.28 грн |
25+ | 43 грн |
31+ | 31.22 грн |
83+ | 29.57 грн |
IRFUC20PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 346 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.58 грн |
6+ | 46.24 грн |
25+ | 39.02 грн |
26+ | 36.97 грн |
72+ | 34.5 грн |
300+ | 33.93 грн |
IRFZ10PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ14PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1112 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.39 грн |
7+ | 40.35 грн |
10+ | 34.83 грн |
36+ | 26.68 грн |
98+ | 25.23 грн |
IRFZ20PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ24PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 983 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 91.12 грн |
10+ | 80.87 грн |
29+ | 33.52 грн |
78+ | 31.71 грн |
IRFZ34PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ40PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
IRFZ44PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 514 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 92.01 грн |
4+ | 79.34 грн |
10+ | 67.36 грн |
15+ | 63.25 грн |
42+ | 59.97 грн |
250+ | 57.5 грн |
IRFZ44RPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ44SPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ44STRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRFZ48PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ48RPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 395 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 144.2 грн |
3+ | 126.26 грн |
10+ | 106.79 грн |
11+ | 92.83 грн |
29+ | 87.9 грн |
IRFZ48RSPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
IRFZ48SPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRFZ48STRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній