Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI4904DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Kind of package: reel; tape Drain-source voltage: 40V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.25W Polarisation: unipolar Gate charge: 85nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 20A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
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SI4909DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.4A Pulsed drain current: -30A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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Si4922BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
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SI4922BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
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SI4925BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SI4925DDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4602 шт: термін постачання 7-14 дні (днів) |
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SI4931DY-T1-E3 | VISHAY | SI4931DY-T1-E3 Multi channel transistors |
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SI4931DY-T1-GE3 | VISHAY | SI4931DY-T1-GE3 Multi channel transistors |
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SI4932DY-T1-GE3 | VISHAY | SI4932DY-T1-GE3 SMD N channel transistors |
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SI4936BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A Power dissipation: 2.8W Mounting: SMD Kind of package: reel; tape Case: SO8 Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 51mΩ Pulsed drain current: 30A Gate charge: 15nC Polarisation: unipolar Technology: TrenchFET® Drain current: 6.9A кількість в упаковці: 2500 шт |
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SI4936CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 20A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2390 шт: термін постачання 7-14 дні (днів) |
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SI4943BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.4A Pulsed drain current: -30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI4943CDY-T1-E3 | VISHAY | SI4943CDY-T1-E3 Multi channel transistors |
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SI4943CDY-T1-GE3 | VISHAY | SI4943CDY-T1-GE3 Multi channel transistors |
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SI4946BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.4A Power dissipation: 3.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 7-14 дні (днів) |
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SI4946BEY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.4A Power dissipation: 3.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1909 шт: термін постачання 7-14 дні (днів) |
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SI4946CDY-T1-GE3 | VISHAY | SI4946CDY-T1-GE3 SMD N channel transistors |
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SI4948BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W Power dissipation: 2.4W Mounting: SMD Kind of package: reel; tape Case: SO8 Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -25A Drain-source voltage: -60V Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Polarisation: unipolar Gate charge: 22nC кількість в упаковці: 2500 шт |
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SI4948BEY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8 Power dissipation: 0.95W Mounting: SMD Kind of package: reel; tape Case: SO8 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -25A Drain-source voltage: -60V Drain current: -2.4A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 22nC кількість в упаковці: 1 шт |
на замовлення 1331 шт: термін постачання 7-14 дні (днів) |
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SI4963BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A кількість в упаковці: 1 шт |
товар відсутній |
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SI4963BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A кількість в упаковці: 2500 шт |
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SI5403DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: ChipFET Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5418DU-T1-GE3 | VISHAY | SI5418DU-T1-GE3 SMD N channel transistors |
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SI5419DU-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A Kind of package: reel; tape Pulsed drain current: -40A Power dissipation: 31W Gate charge: 45nC Polarisation: unipolar Technology: TrenchFET® Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD кількість в упаковці: 1 шт |
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SI5424DC-T1-GE3 | VISHAY | SI5424DC-T1-GE3 SMD N channel transistors |
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SI5429DU-T1-GE3 | VISHAY | SI5429DU-T1-GE3 SMD P channel transistors |
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SI5441BDC-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A Mounting: SMD On-state resistance: 80mΩ Kind of package: reel; tape Technology: TrenchFET® Pulsed drain current: -20A Power dissipation: 2.5W Gate charge: 22nC Polarisation: unipolar Drain current: -6.1A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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SI5441BDC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A Mounting: SMD On-state resistance: 80mΩ Kind of package: reel; tape Technology: TrenchFET® Pulsed drain current: -20A Power dissipation: 2.5W Gate charge: 22nC Polarisation: unipolar Drain current: -6.1A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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SI5442DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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Si5448DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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SI5457DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -20A Power dissipation: 5.7W Gate charge: 38nC Polarisation: unipolar Technology: TrenchFET® Drain current: -6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 56mΩ кількість в упаковці: 1 шт |
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SI5458DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W Mounting: SMD Drain-source voltage: 30V Drain current: 6A On-state resistance: 51mΩ Type of transistor: N-MOSFET Power dissipation: 10.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A кількість в упаковці: 3000 шт |
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SI5459DU-T1-GE3 | VISHAY | SI5459DU-T1-GE3 SMD P channel transistors |
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SI5468DC-T1-GE3 | VISHAY | SI5468DC-T1-GE3 SMD N channel transistors |
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SI5471DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -25A Mounting: SMD Drain-source voltage: -20V Drain current: -6A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 6.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 96nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -25A кількість в упаковці: 3000 шт |
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SI5476DU-T1-GE3 | VISHAY | SI5476DU-T1-GE3 SMD N channel transistors |
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SI5504BDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3.7A Power dissipation: 3.1/3.12W Gate-source voltage: ±20V On-state resistance: 235/100mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5504BDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3.7A Power dissipation: 3.1/3.12W Gate-source voltage: ±20V On-state resistance: 235/100mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5513CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A кількість в упаковці: 3000 шт |
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SI5513CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A кількість в упаковці: 3000 шт |
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SI5515CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Mounting: SMD Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 156/50mΩ Power dissipation: 3.1W Gate charge: 11/11.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4/-4A Kind of channel: enhanced Drain-source voltage: 20/-20V кількість в упаковці: 3000 шт |
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SI5515CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Mounting: SMD Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 156/50mΩ Power dissipation: 3.1W Gate charge: 11/11.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4/-4A Kind of channel: enhanced Drain-source voltage: 20/-20V кількість в упаковці: 3000 шт |
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SI5517DU-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W Mounting: SMD Power dissipation: 8.3W Gate charge: 14/16nC Polarisation: unipolar Technology: TrenchFET® Drain current: 6/-6A Kind of channel: enhanced Drain-source voltage: 20/-20V Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 131/55mΩ кількість в упаковці: 3000 шт |
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SI5902BDC-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5902BDC-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5908DC-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Pulsed drain current: 20A Power dissipation: 2.1W Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5908DC-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Pulsed drain current: 20A Power dissipation: 2.1W Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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Si5922DU-T1-GE3 | VISHAY | SI5922DU-T1-GE3 SMD N channel transistors |
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SI5935CDC-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 3.1W Gate-source voltage: ±8V On-state resistance: 156mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI5935CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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SI5936DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 25A Power dissipation: 10.4W Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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Si5948DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 10A Power dissipation: 7W Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI6415DQ-T1-E3 | VISHAY | SI6415DQ-T1-E3 SMD P channel transistors |
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SI6415DQ-T1-GE3 | VISHAY | SI6415DQ-T1-GE3 SMD P channel transistors |
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SI6423DQ-T1-E3 | VISHAY | SI6423DQ-T1-E3 SMD P channel transistors |
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SI6423DQ-T1-GE3 | VISHAY | SI6423DQ-T1-GE3 SMD P channel transistors |
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SI6562CDQ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.2/-4.9A Pulsed drain current: 30A Power dissipation: 1/1.1W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 22/30mΩ Mounting: SMD Gate charge: 23/51nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI6913DQ-T1-E3 | VISHAY | SI6913DQ-T1-E3 Multi channel transistors |
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SI6913DQ-T1-GE3 | VISHAY | SI6913DQ-T1-GE3 Multi channel transistors |
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SI6926ADQ-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 43mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
SI4904DY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Gate charge: 85nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 20A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Gate charge: 85nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 20A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
SI4909DY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.4A
Pulsed drain current: -30A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.4A
Pulsed drain current: -30A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
Si4922BDY-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4922BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4925BDY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI4925DDY-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4602 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.14 грн |
6+ | 44.52 грн |
25+ | 37.1 грн |
32+ | 30.51 грн |
86+ | 28.86 грн |
SI4936BDY-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Power dissipation: 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 30A
Gate charge: 15nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6.9A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Power dissipation: 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 30A
Gate charge: 15nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6.9A
кількість в упаковці: 2500 шт
товар відсутній
SI4936CDY-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2390 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 40.84 грн |
25+ | 35.96 грн |
37+ | 26.38 грн |
100+ | 24.74 грн |
SI4943BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8.4A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8.4A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI4946BEY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.67 грн |
5+ | 58.22 грн |
24+ | 40.82 грн |
64+ | 38.6 грн |
SI4946BEY-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1909 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.74 грн |
5+ | 58.22 грн |
23+ | 41.97 грн |
63+ | 39.68 грн |
SI4948BEY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Power dissipation: 2.4W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Power dissipation: 2.4W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 2500 шт
товар відсутній
SI4948BEY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Power dissipation: 0.95W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Power dissipation: 0.95W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 1 шт
на замовлення 1331 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 66.6 грн |
6+ | 45.38 грн |
25+ | 37.93 грн |
31+ | 31.33 грн |
84+ | 29.68 грн |
SI4963BDY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 1 шт
товар відсутній
SI4963BDY-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 2500 шт
товар відсутній
SI5403DC-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5419DU-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SI5441BDC-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5441BDC-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5442DU-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
Si5448DU-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI5457DC-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 5.7W
Gate charge: 38nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 5.7W
Gate charge: 38nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
товар відсутній
SI5458DU-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
товар відсутній
SI5471DC-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -25A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -25A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
кількість в упаковці: 3000 шт
товар відсутній
SI5504BDC-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5504BDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5517DU-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Mounting: SMD
Power dissipation: 8.3W
Gate charge: 14/16nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6/-6A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 131/55mΩ
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Mounting: SMD
Power dissipation: 8.3W
Gate charge: 14/16nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6/-6A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 131/55mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5935CDC-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5935CDC-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SI5936DU-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si5948DU-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6562CDQ-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Pulsed drain current: 30A
Power dissipation: 1/1.1W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 22/30mΩ
Mounting: SMD
Gate charge: 23/51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Pulsed drain current: 30A
Power dissipation: 1/1.1W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 22/30mΩ
Mounting: SMD
Gate charge: 23/51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6926ADQ-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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