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SI4904DY-T1-GE3 VISHAY si4904dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Gate charge: 85nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 20A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
SI4909DY-T1-GE3 SI4909DY-T1-GE3 VISHAY si4909dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.4A
Pulsed drain current: -30A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
Si4922BDY-T1-E3 VISHAY si4922bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4922BDY-T1-GE3 VISHAY si4922bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4925BDY-T1-E3 SI4925BDY-T1-E3 VISHAY SI4925BDY-T1-E3.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI4925DDY-T1-GE3 SI4925DDY-T1-GE3 VISHAY SI4925DDY-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4602 шт:
термін постачання 7-14 дні (днів)
4+78.14 грн
6+ 44.52 грн
25+ 37.1 грн
32+ 30.51 грн
86+ 28.86 грн
Мінімальне замовлення: 4
SI4931DY-T1-E3 VISHAY si4931dy.pdf SI4931DY-T1-E3 Multi channel transistors
товар відсутній
SI4931DY-T1-GE3 VISHAY si4931dy.pdf SI4931DY-T1-GE3 Multi channel transistors
товар відсутній
SI4932DY-T1-GE3 VISHAY si4932dy.pdf SI4932DY-T1-GE3 SMD N channel transistors
товар відсутній
SI4936BDY-T1-E3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Power dissipation: 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 30A
Gate charge: 15nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6.9A
кількість в упаковці: 2500 шт
товар відсутній
SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 VISHAY si4936cdy-t1-e3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2390 шт:
термін постачання 7-14 дні (днів)
7+40.84 грн
25+ 35.96 грн
37+ 26.38 грн
100+ 24.74 грн
Мінімальне замовлення: 7
SI4943BDY-T1-E3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8.4A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI4943CDY-T1-E3 VISHAY si4943cd.pdf SI4943CDY-T1-E3 Multi channel transistors
товар відсутній
SI4943CDY-T1-GE3 VISHAY si4943cd.pdf SI4943CDY-T1-GE3 Multi channel transistors
товар відсутній
SI4946BEY-T1-E3 SI4946BEY-T1-E3 VISHAY SI4946BEY-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)
4+78.67 грн
5+ 58.22 грн
24+ 40.82 грн
64+ 38.6 грн
Мінімальне замовлення: 4
SI4946BEY-T1-GE3 SI4946BEY-T1-GE3 VISHAY SI4946BEY-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1909 шт:
термін постачання 7-14 дні (днів)
4+75.74 грн
5+ 58.22 грн
23+ 41.97 грн
63+ 39.68 грн
Мінімальне замовлення: 4
SI4946CDY-T1-GE3 VISHAY si4946cdy.pdf SI4946CDY-T1-GE3 SMD N channel transistors
товар відсутній
SI4948BEY-T1-E3 VISHAY si4948be.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Power dissipation: 2.4W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 2500 шт
товар відсутній
SI4948BEY-T1-GE3 SI4948BEY-T1-GE3 VISHAY si4948be.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Power dissipation: 0.95W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 1 шт
на замовлення 1331 шт:
термін постачання 7-14 дні (днів)
4+66.6 грн
6+ 45.38 грн
25+ 37.93 грн
31+ 31.33 грн
84+ 29.68 грн
Мінімальне замовлення: 4
SI4963BDY-T1-E3 VISHAY 72753.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 1 шт
товар відсутній
SI4963BDY-T1-GE3 VISHAY 72753.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 2500 шт
товар відсутній
SI5403DC-T1-GE3 VISHAY si5403dc.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5418DU-T1-GE3 VISHAY si5418du.pdf SI5418DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5419DU-T1-GE3 VISHAY si5419du.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SI5424DC-T1-GE3 VISHAY si5424dc.pdf SI5424DC-T1-GE3 SMD N channel transistors
товар відсутній
SI5429DU-T1-GE3 VISHAY si5429du.pdf SI5429DU.pdf SI5429DU-T1-GE3 SMD P channel transistors
товар відсутній
SI5441BDC-T1-E3 VISHAY 73207.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5441BDC-T1-GE3 VISHAY 73207.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5442DU-T1-GE3 VISHAY si5442du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
Si5448DU-T1-GE3 VISHAY si5448du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI5457DC-T1-GE3 VISHAY si5457dc.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 5.7W
Gate charge: 38nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
товар відсутній
SI5458DU-T1-GE3 VISHAY si5458du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
товар відсутній
SI5459DU-T1-GE3 VISHAY si5459du.pdf SI5459DU-T1-GE3 SMD P channel transistors
товар відсутній
SI5468DC-T1-GE3 VISHAY si5468dc.pdf SI5468DC-T1-GE3 SMD N channel transistors
товар відсутній
SI5471DC-T1-GE3 VISHAY si5471dc.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -25A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
кількість в упаковці: 3000 шт
товар відсутній
SI5476DU-T1-GE3 VISHAY si5476du.pdf SI5476DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5504BDC-T1-E3 VISHAY si5504bdc.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5504BDC-T1-GE3 VISHAY si5504bdc.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-E3 VISHAY si5513cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-GE3 VISHAY si5513cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-E3 VISHAY si5515cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-GE3 VISHAY si5515cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5517DU-T1-GE3 VISHAY si5517du.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Mounting: SMD
Power dissipation: 8.3W
Gate charge: 14/16nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6/-6A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 131/55mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-E3 VISHAY si5902bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-GE3 VISHAY si5902bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-E3 VISHAY si5908dc.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-GE3 VISHAY si5908dc.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si5922DU-T1-GE3 VISHAY SI5922DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5935CDC-T1-E3 VISHAY si5935cdc.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5935CDC-T1-GE3 VISHAY Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SI5936DU-T1-GE3 VISHAY si5936du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si5948DU-T1-GE3 VISHAY si5948du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6415DQ-T1-E3 VISHAY 70639.pdf SI6415DQ-T1-E3 SMD P channel transistors
товар відсутній
SI6415DQ-T1-GE3 VISHAY si6415dq.pdf SI6415DQ-T1-GE3 SMD P channel transistors
товар відсутній
SI6423DQ-T1-E3 VISHAY 72257.pdf SI6423DQ-T1-E3 SMD P channel transistors
товар відсутній
SI6423DQ-T1-GE3 VISHAY 72257.pdf SI6423DQ-T1-GE3 SMD P channel transistors
товар відсутній
SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 VISHAY si6562cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Pulsed drain current: 30A
Power dissipation: 1/1.1W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 22/30mΩ
Mounting: SMD
Gate charge: 23/51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6913DQ-T1-E3 VISHAY si6913dq.pdf SI6913DQ-T1-E3 Multi channel transistors
товар відсутній
SI6913DQ-T1-GE3 VISHAY si6913dq.pdf SI6913DQ-T1-GE3 Multi channel transistors
товар відсутній
SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 VISHAY SI6926ADQ-T1-E3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI4904DY-T1-GE3 si4904dy.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Gate charge: 85nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 20A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.4A
Pulsed drain current: -30A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
Si4922BDY-T1-E3 si4922bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4922BDY-T1-GE3 si4922bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
SI4925BDY-T1-E3 SI4925BDY-T1-E3.pdf
SI4925BDY-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI4925DDY-T1-GE3 SI4925DDY-T1-GE3.pdf
SI4925DDY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4602 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+78.14 грн
6+ 44.52 грн
25+ 37.1 грн
32+ 30.51 грн
86+ 28.86 грн
Мінімальне замовлення: 4
SI4931DY-T1-E3 si4931dy.pdf
Виробник: VISHAY
SI4931DY-T1-E3 Multi channel transistors
товар відсутній
SI4931DY-T1-GE3 si4931dy.pdf
Виробник: VISHAY
SI4931DY-T1-GE3 Multi channel transistors
товар відсутній
SI4932DY-T1-GE3 si4932dy.pdf
Виробник: VISHAY
SI4932DY-T1-GE3 SMD N channel transistors
товар відсутній
SI4936BDY-T1-E3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Power dissipation: 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 30A
Gate charge: 15nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6.9A
кількість в упаковці: 2500 шт
товар відсутній
SI4936CDY-T1-GE3 si4936cdy-t1-e3.pdf
SI4936CDY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2390 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
7+40.84 грн
25+ 35.96 грн
37+ 26.38 грн
100+ 24.74 грн
Мінімальне замовлення: 7
SI4943BDY-T1-E3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8.4A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI4943CDY-T1-E3 si4943cd.pdf
Виробник: VISHAY
SI4943CDY-T1-E3 Multi channel transistors
товар відсутній
SI4943CDY-T1-GE3 si4943cd.pdf
Виробник: VISHAY
SI4943CDY-T1-GE3 Multi channel transistors
товар відсутній
SI4946BEY-T1-E3 SI4946BEY-DTE.pdf
SI4946BEY-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+78.67 грн
5+ 58.22 грн
24+ 40.82 грн
64+ 38.6 грн
Мінімальне замовлення: 4
SI4946BEY-T1-GE3 SI4946BEY-DTE.pdf
SI4946BEY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 3.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1909 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+75.74 грн
5+ 58.22 грн
23+ 41.97 грн
63+ 39.68 грн
Мінімальне замовлення: 4
SI4946CDY-T1-GE3 si4946cdy.pdf
Виробник: VISHAY
SI4946CDY-T1-GE3 SMD N channel transistors
товар відсутній
SI4948BEY-T1-E3 si4948be.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Power dissipation: 2.4W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 2500 шт
товар відсутній
SI4948BEY-T1-GE3 si4948be.pdf
SI4948BEY-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Power dissipation: 0.95W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 22nC
кількість в упаковці: 1 шт
на замовлення 1331 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+66.6 грн
6+ 45.38 грн
25+ 37.93 грн
31+ 31.33 грн
84+ 29.68 грн
Мінімальне замовлення: 4
SI4963BDY-T1-E3 72753.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 1 шт
товар відсутній
SI4963BDY-T1-GE3 72753.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
кількість в упаковці: 2500 шт
товар відсутній
SI5403DC-T1-GE3 si5403dc.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5418DU-T1-GE3 si5418du.pdf
Виробник: VISHAY
SI5418DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5419DU-T1-GE3 si5419du.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SI5424DC-T1-GE3 si5424dc.pdf
Виробник: VISHAY
SI5424DC-T1-GE3 SMD N channel transistors
товар відсутній
SI5429DU-T1-GE3 si5429du.pdf SI5429DU.pdf
Виробник: VISHAY
SI5429DU-T1-GE3 SMD P channel transistors
товар відсутній
SI5441BDC-T1-E3 73207.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5441BDC-T1-GE3 73207.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
SI5442DU-T1-GE3 si5442du.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
Si5448DU-T1-GE3 si5448du.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI5457DC-T1-GE3 si5457dc.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 5.7W
Gate charge: 38nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
товар відсутній
SI5458DU-T1-GE3 si5458du.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
товар відсутній
SI5459DU-T1-GE3 si5459du.pdf
Виробник: VISHAY
SI5459DU-T1-GE3 SMD P channel transistors
товар відсутній
SI5468DC-T1-GE3 si5468dc.pdf
Виробник: VISHAY
SI5468DC-T1-GE3 SMD N channel transistors
товар відсутній
SI5471DC-T1-GE3 si5471dc.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -25A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
кількість в упаковці: 3000 шт
товар відсутній
SI5476DU-T1-GE3 si5476du.pdf
Виробник: VISHAY
SI5476DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5504BDC-T1-E3 si5504bdc.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5504BDC-T1-GE3 si5504bdc.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
Power dissipation: 3.1/3.12W
Gate-source voltage: ±20V
On-state resistance: 235/100mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-E3 si5513cd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5513CDC-T1-GE3 si5513cd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-E3 si5515cd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5515CDC-T1-GE3 si5515cd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Mounting: SMD
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 156/50mΩ
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4/-4A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
кількість в упаковці: 3000 шт
товар відсутній
SI5517DU-T1-GE3 si5517du.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Mounting: SMD
Power dissipation: 8.3W
Gate charge: 14/16nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6/-6A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 131/55mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-E3 si5902bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5902BDC-T1-GE3 si5902bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 3.12W
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-E3 si5908dc.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5908DC-T1-GE3 si5908dc.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 5.9A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.9A
Pulsed drain current: 20A
Power dissipation: 2.1W
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si5922DU-T1-GE3
Виробник: VISHAY
SI5922DU-T1-GE3 SMD N channel transistors
товар відсутній
SI5935CDC-T1-E3 si5935cdc.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 3.1W
Gate-source voltage: ±8V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI5935CDC-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SI5936DU-T1-GE3 si5936du.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si5948DU-T1-GE3 si5948du.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6415DQ-T1-E3 70639.pdf
Виробник: VISHAY
SI6415DQ-T1-E3 SMD P channel transistors
товар відсутній
SI6415DQ-T1-GE3 si6415dq.pdf
Виробник: VISHAY
SI6415DQ-T1-GE3 SMD P channel transistors
товар відсутній
SI6423DQ-T1-E3 72257.pdf
Виробник: VISHAY
SI6423DQ-T1-E3 SMD P channel transistors
товар відсутній
SI6423DQ-T1-GE3 72257.pdf
Виробник: VISHAY
SI6423DQ-T1-GE3 SMD P channel transistors
товар відсутній
SI6562CDQ-T1-GE3 si6562cd.pdf
SI6562CDQ-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.2/-4.9A
Pulsed drain current: 30A
Power dissipation: 1/1.1W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 22/30mΩ
Mounting: SMD
Gate charge: 23/51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI6913DQ-T1-E3 si6913dq.pdf
Виробник: VISHAY
SI6913DQ-T1-E3 Multi channel transistors
товар відсутній
SI6913DQ-T1-GE3 si6913dq.pdf
Виробник: VISHAY
SI6913DQ-T1-GE3 Multi channel transistors
товар відсутній
SI6926ADQ-T1-E3 SI6926ADQ-T1-E3.pdf
SI6926ADQ-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
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