Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI8429DB-T1-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Power dissipation: 6.25W Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -25A Drain-source voltage: -8V Drain current: -11.7A On-state resistance: 98mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8457DB-T1-E1 | VISHAY | SI8457DB-T1-E1 SMD P channel transistors |
товар відсутній |
||||||||||||||
SI8466EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 5.4A On-state resistance: 90mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8472DB-T2-E1 | VISHAY | SI8472DB-T2-E1 SMD N channel transistors |
товар відсутній |
||||||||||||||
Si8481DB-T1-E1 | VISHAY | SI8481DB-T1-E1 SMD P channel transistors |
товар відсутній |
||||||||||||||
SI8483DB-T2-E1 | VISHAY | SI8483DB-T2-E1 SMD P channel transistors |
товар відсутній |
||||||||||||||
SI8487DB-T1-E1 | VISHAY | SI8487DB-T1-E1 SMD P channel transistors |
на замовлення 2885 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI8489EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8497DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -13A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 49nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8499DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8800EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A Mounting: SMD Pulsed drain current: 15A Power dissipation: 0.9W Gate charge: 8.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 2.8A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.15Ω кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8802DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 6.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 15A Drain-source voltage: 8V Drain current: 3.5A On-state resistance: 135mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8806DB-T2-E1 | VISHAY | SI8806DB-T2-E1 SMD N channel transistors |
товар відсутній |
||||||||||||||
SI8808DB-T2-E1 | VISHAY | SI8808DB-T2-E1 SMD N channel transistors |
товар відсутній |
||||||||||||||
SI8810EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 0.9W Gate-source voltage: ±8V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8812DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Kind of package: reel; tape Pulsed drain current: 20A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar Technology: TrenchFET® Drain current: 3.2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 93mΩ Mounting: SMD кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8816EDB-T2-E1 | VISHAY | SI8816EDB-T2-E1 SMD N channel transistors |
товар відсутній |
||||||||||||||
SI8817DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W On-state resistance: 0.32Ω Polarisation: unipolar Technology: TrenchFET® Pulsed drain current: -15A Gate charge: 19nC Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -20V Gate-source voltage: ±8V кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8819EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A Mounting: SMD Technology: TrenchFET® Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.28Ω Pulsed drain current: -15A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8821EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Pulsed drain current: -15A Power dissipation: 0.9W Gate-source voltage: ±12V On-state resistance: 0.215Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
Si8823EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 335mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8824EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 6nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 15A Drain-source voltage: 20V Drain current: 2.9A On-state resistance: 0.175Ω Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI8851EDB-T2-E1 | VISHAY | SI8851EDB-T2-E1 SMD P channel transistors |
товар відсутній |
||||||||||||||
SI8902AEDB-T2-E1 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A Mounting: SMD Technology: TrenchFET® Drain current: 11A Kind of channel: enhanced Drain-source voltage: 24V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 37mΩ Pulsed drain current: 40A Power dissipation: 5.7W Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SI9407BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 22nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3464 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9407BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
SI9407BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 22nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3464 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
Si9433BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1470 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
Si9433BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1470 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9433BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.2A Pulsed drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||
SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2780 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2780 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9435BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||
SI9926CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8 Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SO8 Drain-source voltage: 20V Drain current: 6.7A On-state resistance: 22mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
на замовлення 2324 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 18mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
Si9933CDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 94mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||
SI9933CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 58mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3245 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SI9945BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 58mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A кількість в упаковці: 1 шт |
на замовлення 12998 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
SIA106DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 40A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA108DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA110DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 20A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA112LDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.8A Pulsed drain current: 10A Power dissipation: 15.6W Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
товар відсутній |
||||||||||||||
SIA400EDJ-T1-GE3 | VISHAY | SIA400EDJ-T1-GE3 SMD N channel transistors |
товар відсутній |
||||||||||||||
SIA413ADJ-T1-GE3 | VISHAY | SIA413ADJ-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||||
SIA413DJ-T1-GE3 | VISHAY | SIA413DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||||
SIA414DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W Mounting: SMD Kind of package: reel; tape Power dissipation: 19W Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 40A Drain-source voltage: 8V Drain current: 12A On-state resistance: 41mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA416DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.3A Pulsed drain current: 15A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA421DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA4263DJ-T1-GE3 | VISHAY | SIA4263DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||||
SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA427ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA429DJT-T1-GE3 | VISHAY | SIA429DJT-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||||
SIA430DJT-T1-GE3 | VISHAY | SIA430DJT-T1-GE3 SMD N channel transistors |
товар відсутній |
||||||||||||||
SIA431DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA432DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA433EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA436DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W Mounting: SMD Kind of package: reel; tape Power dissipation: 19W Polarisation: unipolar Gate charge: 25.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 50A Drain-source voltage: 8V Drain current: 12A On-state resistance: 36mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
SIA437DJ-T1-GE3 | VISHAY | SIA437DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||||
SIA440DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
SIA441DJ-T1-GE3 | VISHAY | SIA441DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
SI8429DB-T1-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -25A
Drain-source voltage: -8V
Drain current: -11.7A
On-state resistance: 98mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -25A
Drain-source voltage: -8V
Drain current: -11.7A
On-state resistance: 98mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8466EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8487DB-T1-E1 |
Виробник: VISHAY
SI8487DB-T1-E1 SMD P channel transistors
SI8487DB-T1-E1 SMD P channel transistors
на замовлення 2885 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 67.84 грн |
51+ | 19.17 грн |
138+ | 18.13 грн |
SI8489EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8497DB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -13A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 49nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -13A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 49nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8499DB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8800EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate charge: 8.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 2.8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate charge: 8.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 2.8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.15Ω
кількість в упаковці: 3000 шт
товар відсутній
SI8802DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8810EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate-source voltage: ±8V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 0.9W
Gate-source voltage: ±8V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI8812DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
SI8817DB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
товар відсутній
SI8819EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8821EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate-source voltage: ±12V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate-source voltage: ±12V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
Si8823EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 335mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 335mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8824EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8902AEDB-T2-E1 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Technology: TrenchFET®
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 24V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 37mΩ
Pulsed drain current: 40A
Power dissipation: 5.7W
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Technology: TrenchFET®
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 24V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 37mΩ
Pulsed drain current: 40A
Power dissipation: 5.7W
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI9407BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3464 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.49 грн |
6+ | 43.5 грн |
25+ | 36.53 грн |
30+ | 31.83 грн |
83+ | 30.09 грн |
500+ | 29.35 грн |
SI9407BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI9407BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3464 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.49 грн |
6+ | 43.5 грн |
25+ | 36.53 грн |
30+ | 31.83 грн |
83+ | 30.09 грн |
500+ | 29.35 грн |
Si9433BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1470 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.86 грн |
5+ | 67.64 грн |
19+ | 51.94 грн |
51+ | 49.47 грн |
500+ | 48.65 грн |
Si9433BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1470 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.86 грн |
5+ | 67.64 грн |
19+ | 51.94 грн |
51+ | 49.47 грн |
500+ | 48.65 грн |
SI9433BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI9435BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2780 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 34.36 грн |
10+ | 31.42 грн |
39+ | 25.11 грн |
105+ | 23.74 грн |
2500+ | 23.09 грн |
SI9435BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2780 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 34.36 грн |
10+ | 31.42 грн |
39+ | 25.11 грн |
105+ | 23.74 грн |
2500+ | 23.09 грн |
SI9435BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI9926CDY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SO8
Drain-source voltage: 20V
Drain current: 6.7A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SO8
Drain-source voltage: 20V
Drain current: 6.7A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
на замовлення 2324 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.7 грн |
7+ | 38.53 грн |
25+ | 32.98 грн |
35+ | 27.21 грн |
97+ | 25.56 грн |
SI9926CDY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
Si9933CDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI9933CDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3245 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.44 грн |
9+ | 31.59 грн |
25+ | 26.88 грн |
43+ | 22.1 грн |
118+ | 20.9 грн |
SI9945BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
на замовлення 12998 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.06 грн |
5+ | 74.23 грн |
22+ | 43.53 грн |
61+ | 41.23 грн |
SIA106DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA108DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA110DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA112LDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SIA414DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA416DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA421DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA4265EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA427ADJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA431DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA432DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA433EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA436DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA440DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній