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SI7104DN-T1-E3 VISHAY si7104dn.pdf SI7104DN-T1-E3 SMD N channel transistors
товар відсутній
SI7104DN-T1-GE3 VISHAY si7104dn.pdf SI7104DN-T1-GE3 SMD N channel transistors
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SI7106DN-T1-E3 VISHAY si7106dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
SI7106DN-T1-GE3 VISHAY si7106dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
SI7108DN-T1-E3 VISHAY si7108dn.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI7108DN-T1-GE3 VISHAY si7108dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI7110DN-T1-E3 VISHAY si7110dn.pdf SI7110DN-T1-E3 SMD N channel transistors
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SI7110DN-T1-GE3 VISHAY si7110dn.pdf SI7110DN-T1-GE3 SMD N channel transistors
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Si7111EDN-T1-GE3 VISHAY si7111edn.pdf SI7111EDN-T1-GE3 SMD P channel transistors
товар відсутній
SI7112DN-T1-E3 VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7112DN-T1-GE3 VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113ADN-T1-GE3 VISHAY si7113adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113DN-T1-E3 VISHAY si7113dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113DN-T1-GE3 VISHAY si7113dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2900 шт:
термін постачання 7-14 дні (днів)
3+124.95 грн
10+ 99.83 грн
16+ 63.81 грн
42+ 59.67 грн
Мінімальне замовлення: 3
SI7114ADN-T1-GE3 VISHAY si7114ad.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7114DN-T1-E3 VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7114DN-T1-GE3 VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7115DN-T1-E3 VISHAY si7115dn.pdf SI7115DN-T1-E3 SMD P channel transistors
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SI7115DN-T1-GE3 VISHAY si7115dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7116BDN-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SI7116DN-T1-E3 VISHAY si7116dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7116DN-T1-GE3 VISHAY si7116dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7117DN-T1-E3 VISHAY si7117dn.pdf SI7117DN-T1-E3 SMD P channel transistors
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SI7117DN-T1-GE3 VISHAY si7117dn.pdf SI7117DN-T1-GE3 SMD P channel transistors
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SI7119DN-T1-E3 VISHAY si7119dn.pdf SI7119DN-T1-E3 SMD P channel transistors
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SI7119DN-T1-GE3 VISHAY si7119dn.pdf SI7119DN-T1-GE3 SMD P channel transistors
товар відсутній
Si7120ADN-T1-GE3 VISHAY si7120ad.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7121ADN-T1-GE3 VISHAY si7121adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7121DN-T1-GE3 VISHAY si7121adn.pdf SI7121DN-T1-GE3 SMD P channel transistors
товар відсутній
SI7129DN-T1-GE3 VISHAY si7129dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7135DP-T1-GE3 VISHAY si7135dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 250nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Case: PowerPAK® SO8
Drain-source voltage: -30V
Drain current: -60A
On-state resistance: 3.9mΩ
Type of transistor: P-MOSFET
Power dissipation: 66.6W
кількість в упаковці: 3000 шт
товар відсутній
SI7137DP-T1-GE3 VISHAY si7137dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Drain-source voltage: -20V
Drain current: -60A
On-state resistance: 1.95mΩ
Type of transistor: P-MOSFET
Power dissipation: 66.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SI7139DP-T1-GE3 VISHAY si7139dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7141DP-T1-GE3 VISHAY si7141dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7143DP-T1-GE3 VISHAY si7143dp.pdf SI7143DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7145DP-T1-GE3 VISHAY si7145dp.pdf SI7145DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7148DP-T1-E3 VISHAY 73314.pdf SI7148DP-T1-E3 SMD N channel transistors
товар відсутній
SI7148DP-T1-GE3 VISHAY 73314.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 61W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7149ADP-T1-GE3 SI7149ADP-T1-GE3 VISHAY si7149adp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 931 шт:
термін постачання 7-14 дні (днів)
4+80.41 грн
6+ 46.22 грн
25+ 39.37 грн
30+ 33.03 грн
81+ 31.22 грн
Мінімальне замовлення: 4
SI7149DP-T1-GE3 VISHAY si7149dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7153DN-T1-GE3 VISHAY si7153dn.pdf SI7153DN-T1-GE3 SMD P channel transistors
на замовлення 5468 шт:
термін постачання 7-14 дні (днів)
9+33.02 грн
47+ 20.88 грн
128+ 19.72 грн
Мінімальне замовлення: 9
SI7155DP-T1-GE3 VISHAY si7155dp.pdf SI7155DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7157DP-T1-GE3 VISHAY si7157dp.pdf SI7157DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7164DP-T1-GE3 VISHAY si7164dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 6.25mΩ
Pulsed drain current: 80A
Power dissipation: 104W
Gate charge: 75nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
кількість в упаковці: 1 шт
товар відсутній
SI7172ADP-T1-RE3 VISHAY si7172adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
товар відсутній
SI7172DP-T1-GE3 VISHAY si7172dp.pdf SI7172DP-T1-GE3 SMD N channel transistors
товар відсутній
SI7174DP-T1-GE3 VISHAY si7174dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7178DP-T1-GE3 VISHAY si7178dp.pdf description SI7178DP-T1-GE3 SMD N channel transistors
товар відсутній
SI7190ADP-T1-RE3 VISHAY si7190adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SI7190DP-T1-GE3 VISHAY si7190dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7192DP-T1-GE3 VISHAY si7192dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Kind of package: reel; tape
Pulsed drain current: 100A
Power dissipation: 104W
Gate charge: 135nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
On-state resistance: 2.25mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
SI7212DN-T1-E3 VISHAY si7212dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7212DN-T1-GE3 VISHAY si7212dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7216DN-T1-E3 VISHAY si7216dn.pdf SI7216DN-T1-E3 SMD N channel transistors
товар відсутній
SI7216DN-T1-GE3 VISHAY si7216dn.pdf SI7216DN-T1-GE3 SMD N channel transistors
товар відсутній
SI7220DN-T1-E3 VISHAY si7220dn.pdf SI7220DN-T1-E3 SMD N channel transistors
товар відсутній
SI7220DN-T1-GE3 VISHAY 73117.pdf SI7220DN-T1-GE3 SMD N channel transistors
товар відсутній
SI7223DN-T1-GE3 VISHAY si7223dn.pdf SI7223DN-T1-GE3 Multi channel transistors
товар відсутній
SI7232DN-T1-GE3 VISHAY si7232dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7234DP-T1-GE3 VISHAY si7234dp.pdf SI7234DP-T1-GE3 SMD N channel transistors
товар відсутній
SI7104DN-T1-E3 si7104dn.pdf
Виробник: VISHAY
SI7104DN-T1-E3 SMD N channel transistors
товар відсутній
SI7104DN-T1-GE3 si7104dn.pdf
Виробник: VISHAY
SI7104DN-T1-GE3 SMD N channel transistors
товар відсутній
SI7106DN-T1-E3 si7106dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
SI7106DN-T1-GE3 si7106dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
SI7108DN-T1-E3 description si7108dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI7108DN-T1-GE3 si7108dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
SI7110DN-T1-E3 si7110dn.pdf
Виробник: VISHAY
SI7110DN-T1-E3 SMD N channel transistors
товар відсутній
SI7110DN-T1-GE3 si7110dn.pdf
Виробник: VISHAY
SI7110DN-T1-GE3 SMD N channel transistors
товар відсутній
Si7111EDN-T1-GE3 si7111edn.pdf
Виробник: VISHAY
SI7111EDN-T1-GE3 SMD P channel transistors
товар відсутній
SI7112DN-T1-E3 si7112dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7112DN-T1-GE3 si7112dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113ADN-T1-GE3 si7113adn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113DN-T1-E3 si7113dn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7113DN-T1-GE3 si7113dn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2900 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+124.95 грн
10+ 99.83 грн
16+ 63.81 грн
42+ 59.67 грн
Мінімальне замовлення: 3
SI7114ADN-T1-GE3 si7114ad.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7114DN-T1-E3 si7114dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7114DN-T1-GE3 si7114dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7115DN-T1-E3 si7115dn.pdf
Виробник: VISHAY
SI7115DN-T1-E3 SMD P channel transistors
товар відсутній
SI7115DN-T1-GE3 si7115dn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7116BDN-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SI7116DN-T1-E3 si7116dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7116DN-T1-GE3 si7116dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7117DN-T1-E3 si7117dn.pdf
Виробник: VISHAY
SI7117DN-T1-E3 SMD P channel transistors
товар відсутній
SI7117DN-T1-GE3 si7117dn.pdf
Виробник: VISHAY
SI7117DN-T1-GE3 SMD P channel transistors
товар відсутній
SI7119DN-T1-E3 si7119dn.pdf
Виробник: VISHAY
SI7119DN-T1-E3 SMD P channel transistors
товар відсутній
SI7119DN-T1-GE3 si7119dn.pdf
Виробник: VISHAY
SI7119DN-T1-GE3 SMD P channel transistors
товар відсутній
Si7120ADN-T1-GE3 si7120ad.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7121ADN-T1-GE3 si7121adn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7121DN-T1-GE3 si7121adn.pdf
Виробник: VISHAY
SI7121DN-T1-GE3 SMD P channel transistors
товар відсутній
SI7129DN-T1-GE3 si7129dn.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7135DP-T1-GE3 si7135dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 250nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Case: PowerPAK® SO8
Drain-source voltage: -30V
Drain current: -60A
On-state resistance: 3.9mΩ
Type of transistor: P-MOSFET
Power dissipation: 66.6W
кількість в упаковці: 3000 шт
товар відсутній
SI7137DP-T1-GE3 si7137dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Drain-source voltage: -20V
Drain current: -60A
On-state resistance: 1.95mΩ
Type of transistor: P-MOSFET
Power dissipation: 66.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SI7139DP-T1-GE3 si7139dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7141DP-T1-GE3 si7141dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7143DP-T1-GE3 si7143dp.pdf
Виробник: VISHAY
SI7143DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7145DP-T1-GE3 si7145dp.pdf
Виробник: VISHAY
SI7145DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7148DP-T1-E3 73314.pdf
Виробник: VISHAY
SI7148DP-T1-E3 SMD N channel transistors
товар відсутній
SI7148DP-T1-GE3 73314.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 61W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7149ADP-T1-GE3 si7149adp.pdf
SI7149ADP-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 931 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+80.41 грн
6+ 46.22 грн
25+ 39.37 грн
30+ 33.03 грн
81+ 31.22 грн
Мінімальне замовлення: 4
SI7149DP-T1-GE3 si7149dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7153DN-T1-GE3 si7153dn.pdf
Виробник: VISHAY
SI7153DN-T1-GE3 SMD P channel transistors
на замовлення 5468 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
9+33.02 грн
47+ 20.88 грн
128+ 19.72 грн
Мінімальне замовлення: 9
SI7155DP-T1-GE3 si7155dp.pdf
Виробник: VISHAY
SI7155DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7157DP-T1-GE3 si7157dp.pdf
Виробник: VISHAY
SI7157DP-T1-GE3 SMD P channel transistors
товар відсутній
SI7164DP-T1-GE3 si7164dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 6.25mΩ
Pulsed drain current: 80A
Power dissipation: 104W
Gate charge: 75nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
кількість в упаковці: 1 шт
товар відсутній
SI7172ADP-T1-RE3 si7172adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
товар відсутній
SI7172DP-T1-GE3 si7172dp.pdf
Виробник: VISHAY
SI7172DP-T1-GE3 SMD N channel transistors
товар відсутній
SI7174DP-T1-GE3 si7174dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7178DP-T1-GE3 description si7178dp.pdf
Виробник: VISHAY
SI7178DP-T1-GE3 SMD N channel transistors
товар відсутній
SI7190ADP-T1-RE3 si7190adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SI7190DP-T1-GE3 si7190dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI7192DP-T1-GE3 si7192dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Kind of package: reel; tape
Pulsed drain current: 100A
Power dissipation: 104W
Gate charge: 135nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
On-state resistance: 2.25mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
SI7212DN-T1-E3 si7212dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7212DN-T1-GE3 si7212dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7216DN-T1-E3 si7216dn.pdf
Виробник: VISHAY
SI7216DN-T1-E3 SMD N channel transistors
товар відсутній
SI7216DN-T1-GE3 si7216dn.pdf
Виробник: VISHAY
SI7216DN-T1-GE3 SMD N channel transistors
товар відсутній
SI7220DN-T1-E3 si7220dn.pdf
Виробник: VISHAY
SI7220DN-T1-E3 SMD N channel transistors
товар відсутній
SI7220DN-T1-GE3 73117.pdf
Виробник: VISHAY
SI7220DN-T1-GE3 SMD N channel transistors
товар відсутній
SI7223DN-T1-GE3 si7223dn.pdf
Виробник: VISHAY
SI7223DN-T1-GE3 Multi channel transistors
товар відсутній
SI7232DN-T1-GE3 si7232dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI7234DP-T1-GE3 si7234dp.pdf
Виробник: VISHAY
SI7234DP-T1-GE3 SMD N channel transistors
товар відсутній
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