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SIJ438ADP-T1-GE3 VISHAY sij438adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
товар відсутній
SIJ438DP-T1-GE3 VISHAY sij438dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJ462ADP-T1-GE3 VISHAY sij462adp.pdf SIJ462ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ462DP-T1-GE3 VISHAY sij462dp.pdf SIJ462DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ470DP-T1-GE3 VISHAY sij470dp.pdf SIJ470DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ478DP-T1-GE3 VISHAY sij478dp.pdf SIJ478DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ4819DP-T1-GE3 VISHAY SIJ4819DP-T1-GE3 SMD P channel transistors
товар відсутній
SIJ482DP-T1-GE3 VISHAY sij482dp.pdf SIJ482DP-T1-GE3 SMD N channel transistors
товар відсутній
SiJ494DP-T1-GE3 VISHAY sij494dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36.8A
Pulsed drain current: 100A
Power dissipation: 69.4W
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA52ADP-T1-GE3 VISHAY sija52adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA52DP-T1-GE3 VISHAY sija52dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA54DP-T1-GE3 VISHAY sija54dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA58ADP-T1-GE3 VISHAY sija58adp.pdf SIJA58ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJA58DP-T1-GE3 VISHAY sija58dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 109A
Pulsed drain current: 150A
Power dissipation: 56.8W
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA72ADP-T1-GE3 VISHAY sija72adp.pdf SIJA72ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJH112E-T1-GE3 VISHAY SIJH112E-T1-GE3 SMD N channel transistors
товар відсутній
SIJH5100E-T1-GE3 VISHAY sijh5100e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 277A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 2.14mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 128nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 100V
Drain current: 277A
кількість в упаковці: 2000 шт
товар відсутній
SIJH5800E-T1-GE3 VISHAY sijh5800e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 1.58mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 155nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 80V
Drain current: 302A
кількість в упаковці: 2000 шт
товар відсутній
SIJH600E-T1-GE3 VISHAY sijh600e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 373A
Pulsed drain current: 500A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
SIJH800E-T1-GE3 VISHAY sijh800e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
SIP12107DMP-T1-GE3 VISHAY sip12107.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 3A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12108ADMP-T1GE4 VISHAY sip12108_a.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 0.2...4MHz
Case: QFN16
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
Output current: 5A
Output voltage: 0.6...4.675V DC
Input voltage: 2.8...5.5V DC
кількість в упаковці: 1 шт
товар відсутній
SIP12108DMP-T1GE4 VISHAY sip12108_a.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 5A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12109DMP-T1-GE4 VISHAY sip12109.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 4A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 4A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12110DMP-T1-GE4 VISHAY sip12110.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 6A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12116DMP-T1-GE4 VISHAY sip12116.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12117DMP-T1-GE4 VISHAY sip12117.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP2801DY-T1-E3 SIP2801DY-T1-E3 VISHAY sip2800_5.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 7.2...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 6.9...13.5V
кількість в упаковці: 2500 шт
товар відсутній
SIP2804DY-T1-E3 SIP2804DY-T1-E3 VISHAY sip2800_5.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 12.5...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 8.3...13.5V
кількість в упаковці: 2500 шт
товар відсутній
SIP32401ADNP-T1GE4 VISHAY sip32401a_2a.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
Output current: 2.4A
Type of integrated circuit: power switch
кількість в упаковці: 3000 шт
товар відсутній
SIP32409DNP-T1-GE4 VISHAY sip32408_9.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
Output current: 3.5A
Type of integrated circuit: power switch
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
6+45.12 грн
10+ 35.83 грн
25+ 28.75 грн
61+ 15.85 грн
166+ 14.95 грн
3000+ 14.79 грн
Мінімальне замовлення: 6
SIP32411DR-T1-GE3 VISHAY sip32411.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
Output current: 2A
Type of integrated circuit: power switch
кількість в упаковці: 1 шт
товар відсутній
SIP32419DN-T1-GE4 VISHAY sip32429.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
кількість в упаковці: 2500 шт
товар відсутній
SIP32429DN-T1-GE4 VISHAY sip32429.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Output current: 3.5A
Case: DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Type of integrated circuit: power switch
Number of channels: 1
кількість в упаковці: 1 шт
товар відсутній
SIP32431DNP3-T1GE4 VISHAY sip32431.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Case: TDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Output current: 1.4A
кількість в упаковці: 1 шт
на замовлення 1710 шт:
термін постачання 7-14 дні (днів)
6+46 грн
10+ 38.05 грн
25+ 33.52 грн
47+ 20.37 грн
129+ 19.22 грн
3000+ 18.73 грн
9000+ 18.48 грн
Мінімальне замовлення: 6
SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 VISHAY sip32431.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Output current: 1.4A
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
6+49.54 грн
10+ 39.67 грн
25+ 32.04 грн
47+ 20.37 грн
129+ 19.22 грн
1000+ 18.73 грн
3000+ 18.48 грн
Мінімальне замовлення: 6
SIP32458DB-T2-GE1 VISHAY sip32458_9.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WCSP6
On-state resistance: 20mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
кількість в упаковці: 3000 шт
товар відсутній
SIP32461DB-T2-GE1 VISHAY sip32460_1_2.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
Output current: 1.2A
Type of integrated circuit: power switch
кількість в упаковці: 3000 шт
товар відсутній
SIP32509DT-T1-GE3 VISHAY sip32508.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.1...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
SIP32510DT-T1-GE3 VISHAY sip32510.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.2...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
SIR104ADP-T1-RE3 VISHAY sir104adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR104DP-T1-RE3 VISHAY sir104dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR104LDP-T1-RE3 VISHAY sir104ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR106ADP-T1-RE3 VISHAY sir106adp.pdf SIR106ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIR106DP-T1-RE3 VISHAY sir106dp.pdf SIR106DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR108DP-T1-RE3 VISHAY sir108dp.pdf SIR108DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR112DP-T1-RE3 VISHAY sir112dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR120DP-T1-RE3 VISHAY sir120dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR122DP-T1-RE3 VISHAY sir122dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
товар відсутній
SIR122LDP-T1-RE3 VISHAY SIR122LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR124DP-T1-RE3 VISHAY sir124dp.pdf SIR124DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR1309DP-T1-GE3 VISHAY sir1309dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SIR140DP-T1-RE3 VISHAY sir140dp.pdf SIR140DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR150DP-T1-RE3 VISHAY sir150dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
товар відсутній
SIR158DP-T1-GE3 VISHAY sir158dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR158DP-T1-RE3 VISHAY sir158dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR164DP-T1-GE3 VISHAY sir164dp-new.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR165DP-T1-GE3 VISHAY sir165dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIR166DP-T1-GE3 VISHAY sir166dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR167DP-T1-GE3 VISHAY sir167dp.pdf SIR167DP-T1-GE3 SMD P channel transistors
товар відсутній
SIJ438ADP-T1-GE3 sij438adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
товар відсутній
SIJ438DP-T1-GE3 sij438dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJ462ADP-T1-GE3 sij462adp.pdf
Виробник: VISHAY
SIJ462ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ462DP-T1-GE3 sij462dp.pdf
Виробник: VISHAY
SIJ462DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ470DP-T1-GE3 sij470dp.pdf
Виробник: VISHAY
SIJ470DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ478DP-T1-GE3 sij478dp.pdf
Виробник: VISHAY
SIJ478DP-T1-GE3 SMD N channel transistors
товар відсутній
SIJ4819DP-T1-GE3
Виробник: VISHAY
SIJ4819DP-T1-GE3 SMD P channel transistors
товар відсутній
SIJ482DP-T1-GE3 sij482dp.pdf
Виробник: VISHAY
SIJ482DP-T1-GE3 SMD N channel transistors
товар відсутній
SiJ494DP-T1-GE3 sij494dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36.8A
Pulsed drain current: 100A
Power dissipation: 69.4W
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA52ADP-T1-GE3 sija52adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA52DP-T1-GE3 sija52dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA54DP-T1-GE3 sija54dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA58ADP-T1-GE3 sija58adp.pdf
Виробник: VISHAY
SIJA58ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJA58DP-T1-GE3 sija58dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 109A
Pulsed drain current: 150A
Power dissipation: 56.8W
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIJA72ADP-T1-GE3 sija72adp.pdf
Виробник: VISHAY
SIJA72ADP-T1-GE3 SMD N channel transistors
товар відсутній
SIJH112E-T1-GE3
Виробник: VISHAY
SIJH112E-T1-GE3 SMD N channel transistors
товар відсутній
SIJH5100E-T1-GE3 sijh5100e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 277A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 2.14mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 128nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 100V
Drain current: 277A
кількість в упаковці: 2000 шт
товар відсутній
SIJH5800E-T1-GE3 sijh5800e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A
Kind of package: reel; tape
On-state resistance: 1.58mΩ
Type of transistor: N-MOSFET
Case: PowerPAK® 8x8L
Power dissipation: 333W
Polarisation: unipolar
Mounting: SMD
Gate charge: 155nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 80V
Drain current: 302A
кількість в упаковці: 2000 шт
товар відсутній
SIJH600E-T1-GE3 sijh600e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 373A
Pulsed drain current: 500A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
SIJH800E-T1-GE3 sijh800e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
SIP12107DMP-T1-GE3 sip12107.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 3A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12108ADMP-T1GE4 sip12108_a.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 0.2...4MHz
Case: QFN16
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
Output current: 5A
Output voltage: 0.6...4.675V DC
Input voltage: 2.8...5.5V DC
кількість в упаковці: 1 шт
товар відсутній
SIP12108DMP-T1GE4 sip12108_a.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.8...5.5V DC
Output voltage: 0.6...4.675V DC
Output current: 5A
Case: QFN16
Mounting: SMD
Frequency: 0.2...4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12109DMP-T1-GE4 sip12109.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 4A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 4A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12110DMP-T1-GE4 sip12110.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 6A
Case: QFN16
Mounting: SMD
Frequency: 0.2...1.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12116DMP-T1-GE4 sip12116.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP12117DMP-T1-GE4 sip12117.pdf
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
SIP2801DY-T1-E3 sip2800_5.pdf
SIP2801DY-T1-E3
Виробник: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 7.2...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 6.9...13.5V
кількість в упаковці: 2500 шт
товар відсутній
SIP2804DY-T1-E3 sip2800_5.pdf
SIP2804DY-T1-E3
Виробник: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 46kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: boost; buck; buck-boost
Supply voltage: 12.5...13.5V
Duty cycle factor: 0...50%
Application: SMPS
DC supply current: 1mA
Operating voltage: 8.3...13.5V
кількість в упаковці: 2500 шт
товар відсутній
SIP32401ADNP-T1GE4 sip32401a_2a.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
Output current: 2.4A
Type of integrated circuit: power switch
кількість в упаковці: 3000 шт
товар відсутній
SIP32409DNP-T1-GE4 sip32408_9.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
Output current: 3.5A
Type of integrated circuit: power switch
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+45.12 грн
10+ 35.83 грн
25+ 28.75 грн
61+ 15.85 грн
166+ 14.95 грн
3000+ 14.79 грн
Мінімальне замовлення: 6
SIP32411DR-T1-GE3 sip32411.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
Output current: 2A
Type of integrated circuit: power switch
кількість в упаковці: 1 шт
товар відсутній
SIP32419DN-T1-GE4 sip32429.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Output current: 3.5A
Type of integrated circuit: power switch
кількість в упаковці: 2500 шт
товар відсутній
SIP32429DN-T1-GE4 sip32429.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Output current: 3.5A
Case: DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
Type of integrated circuit: power switch
Number of channels: 1
кількість в упаковці: 1 шт
товар відсутній
SIP32431DNP3-T1GE4 sip32431.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Case: TDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Output current: 1.4A
кількість в упаковці: 1 шт
на замовлення 1710 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+46 грн
10+ 38.05 грн
25+ 33.52 грн
47+ 20.37 грн
129+ 19.22 грн
3000+ 18.73 грн
9000+ 18.48 грн
Мінімальне замовлення: 6
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Output current: 1.4A
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+49.54 грн
10+ 39.67 грн
25+ 32.04 грн
47+ 20.37 грн
129+ 19.22 грн
1000+ 18.73 грн
3000+ 18.48 грн
Мінімальне замовлення: 6
SIP32458DB-T2-GE1 sip32458_9.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WCSP6
On-state resistance: 20mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
кількість в упаковці: 3000 шт
товар відсутній
SIP32461DB-T2-GE1 sip32460_1_2.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
Output current: 1.2A
Type of integrated circuit: power switch
кількість в упаковці: 3000 шт
товар відсутній
SIP32509DT-T1-GE3 sip32508.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.1...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
SIP32510DT-T1-GE3 sip32510.pdf
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Kind of integrated circuit: high-side
Mounting: SMD
Case: TSOT23
Supply voltage: 1.2...5.5V DC
On-state resistance: 46mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
SIR104ADP-T1-RE3 sir104adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR104DP-T1-RE3 sir104dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR104LDP-T1-RE3 sir104ldp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR106ADP-T1-RE3 sir106adp.pdf
Виробник: VISHAY
SIR106ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIR106DP-T1-RE3 sir106dp.pdf
Виробник: VISHAY
SIR106DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR108DP-T1-RE3 sir108dp.pdf
Виробник: VISHAY
SIR108DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR112DP-T1-RE3 sir112dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR120DP-T1-RE3 sir120dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR122DP-T1-RE3 sir122dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
товар відсутній
SIR122LDP-T1-RE3
Виробник: VISHAY
SIR122LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR124DP-T1-RE3 sir124dp.pdf
Виробник: VISHAY
SIR124DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR1309DP-T1-GE3 sir1309dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SIR140DP-T1-RE3 sir140dp.pdf
Виробник: VISHAY
SIR140DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR150DP-T1-RE3 sir150dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
товар відсутній
SIR158DP-T1-GE3 sir158dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR158DP-T1-RE3 sir158dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR164DP-T1-GE3 sir164dp-new.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR165DP-T1-GE3 sir165dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIR166DP-T1-GE3 sir166dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR167DP-T1-GE3 sir167dp.pdf
Виробник: VISHAY
SIR167DP-T1-GE3 SMD P channel transistors
товар відсутній
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