| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| SIRA18BDP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W Drain-source voltage: 30V Drain current: 32A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 11W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 19nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 90A кількість в упаковці: 1 шт |
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| SIRA18DP-T1-GE3 | VISHAY |
SIRA18DP-T1-GE3 SMD N channel transistors |
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| SIRA20BDP-T1-GE3 | VISHAY |
SIRA20BDP-T1-GE3 SMD N channel transistors |
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| SIRA20DP-T1-RE3 | VISHAY |
SIRA20DP-T1-RE3 SMD N channel transistors |
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| SIRA24DP-T1-GE3 | VISHAY |
SIRA24DP-T1-GE3 SMD N channel transistors |
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| SIRA28BDP-T1-GE3 | VISHAY |
SIRA28BDP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIRA32DP-T1-RE3 | VISHAY |
SIRA32DP-T1-RE3 SMD N channel transistors |
товар відсутній |
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| SIRA36DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 250A Power dissipation: 28.5W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRA50ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 175A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 150nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V кількість в упаковці: 1 шт |
товар відсутній |
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| SIRA50DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 100A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 194nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V кількість в упаковці: 1 шт |
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| SIRA52ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 200A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRA52DP-T1-GE3 | VISHAY |
SIRA52DP-T1-GE3 SMD N channel transistors |
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| SIRA54DP-T1-GE3 | VISHAY | SIRA54DP-T1-GE3 SMD N channel transistors |
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| SIRA58ADP-T1-RE3 | VISHAY |
SIRA58ADP-T1-RE3 SMD N channel transistors |
товар відсутній |
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| SIRA58DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 87.3A Pulsed drain current: 150A Power dissipation: 36.3W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRA60DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 36W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRA62DP-T1-RE3 | VISHAY |
SIRA62DP-T1-RE3 SMD N channel transistors |
товар відсутній |
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| SIRA64DP-T1-GE3 | VISHAY |
SIRA64DP-T1-GE3 SMD N channel transistors |
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| SiRA72DP-T1-GE3 | VISHAY |
SIRA72DP-T1-GE3 SMD N channel transistors |
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| SIRA74DP-T1-GE3 | VISHAY |
SIRA74DP-T1-GE3 SMD N channel transistors |
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| SIRA80DP-T1-RE3 | VISHAY |
SIRA80DP-T1-RE3 SMD N channel transistors |
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| SIRA84BDP-T1-GE3 | VISHAY | SIRA84BDP-T1-GE3 SMD N channel transistors |
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| SIRA84DP-T1-GE3 | VISHAY |
SIRA84DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIRA88BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W Drain-source voltage: 30V Drain current: 32A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 11W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 19nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 90A кількість в упаковці: 1 шт |
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| SiRA88DP-T1-GE3 | VISHAY |
SIRA88DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIRA90DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRA90DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SiRA96DP-T1-GE3 | VISHAY |
SIRA96DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIRA99DP-T1-GE3 | VISHAY |
SIRA99DP-T1-GE3 SMD P channel transistors |
товар відсутній |
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| SIRB40DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 100A Power dissipation: 29.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIRC06DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 100A Power dissipation: 32W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 4mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIRC10DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 150A Power dissipation: 27.5W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SiRC16DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIRC18DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.54mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIRS700DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 350A Power dissipation: 84W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS106DN-T1-GE3 | VISHAY |
SIS106DN-T1-GE3 SMD N channel transistors |
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| SIS108DN-T1-GE3 | VISHAY | SIS108DN-T1-GE3 SMD N channel transistors |
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| SIS110DN-T1-GE3 | VISHAY |
SIS110DN-T1-GE3 SMD N channel transistors |
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| SIS126DN-T1-GE3 | VISHAY |
SIS126DN-T1-GE3 SMD N channel transistors |
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| SIS128LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 26.9A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 26.9A Pulsed drain current: 70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS176LDN-T1-GE3 | VISHAY |
SIS176LDN-T1-GE3 SMD N channel transistors |
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| SIS178LDN-T1-GE3 | VISHAY |
SIS178LDN-T1-GE3 SMD N channel transistors |
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| SIS184DN-T1-GE3 | VISHAY |
SIS184DN-T1-GE3 SMD N channel transistors |
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| SIS322DNT-T1-GE3 | VISHAY |
SIS322DNT-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIS402DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SiS406DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.2A Pulsed drain current: 50A Power dissipation: 2.3W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2997 шт: термін постачання 7-14 дні (днів) |
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| SIS407ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIS407DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -25A Pulsed drain current: -40A Power dissipation: 21W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 93.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W кількість в упаковці: 1 шт |
товар відсутній |
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| SIS412DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 10W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS413DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS415DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS427EDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -44.3A Pulsed drain current: -110A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS429DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS434DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 17.6A Pulsed drain current: 60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIS435DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -30A Pulsed drain current: -80A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 14mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SiS438DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 16A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 17.5W Polarisation: unipolar Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Case: PowerPAK® 1212-8 кількість в упаковці: 1 шт |
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| SIS443DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIS444DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS447DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 181nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| SIRA18BDP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
| SIRA36DP-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRA50ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Kind of package: reel; tape
Mounting: SMD
Drain current: 175A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Gate charge: 150nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 400A
Polarisation: unipolar
Case: PowerPAK® SO8
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Kind of package: reel; tape
Mounting: SMD
Drain current: 175A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Gate charge: 150nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 400A
Polarisation: unipolar
Case: PowerPAK® SO8
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
| SIRA50DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Kind of package: reel; tape
Mounting: SMD
Drain current: 100A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Gate charge: 194nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 400A
Polarisation: unipolar
Case: PowerPAK® SO8
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Kind of package: reel; tape
Mounting: SMD
Drain current: 100A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Gate charge: 194nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 400A
Polarisation: unipolar
Case: PowerPAK® SO8
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
| SIRA52ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRA58DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRA60DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRA88BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
| SIRA90DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRA90DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRB40DP-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIRC06DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 32W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 32W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIRC10DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SiRC16DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIRC18DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.54mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.54mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIRS700DP-T1-RE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 350A
Power dissipation: 84W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 350A
Power dissipation: 84W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS128LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 26.9A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.9A
Pulsed drain current: 70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 26.9A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.9A
Pulsed drain current: 70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS402DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SiS406DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2997 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 54.75 грн |
| 25+ | 38.12 грн |
| 68+ | 36.5 грн |
| SIS407ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS407DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS410DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
кількість в упаковці: 1 шт
товар відсутній
| SIS412DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS413DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS415DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS427EDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS429DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS434DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS435DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SiS438DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
товар відсутній
| SIS443DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS444DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS447DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній