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SIR165DP-T1-GE3 VISHAY sir165dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
кількість в упаковці: 3000 шт
товар відсутній
SIR166DP-T1-GE3 VISHAY sir166dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR167DP-T1-GE3 VISHAY sir167dp.pdf SIR167DP-T1-GE3 SMD P channel transistors
товар відсутній
SIR170DP-T1-RE3 VISHAY sir170dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR172ADP-T1-GE3 VISHAY sir172adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 44nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 3000 шт
товар відсутній
SIR178DP-T1-RE3 VISHAY sir178dp.pdf SIR178DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR180ADP-T1-RE3 VISHAY doc?77601 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR180DP-T1-RE3 VISHAY sir180dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
кількість в упаковці: 3000 шт
товар відсутній
SIR182DP-T1-RE3 VISHAY sir182dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 117A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR182LDP-T1-RE3 VISHAY sir182ldp.pdf SIR182LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR184DP-T1-RE3 VISHAY sir184dp.pdf SIR184DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR186DP-T1-RE3 VISHAY sir186dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIR186LDP-T1-RE3 VISHAY sir186ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIR188DP-T1-RE3 VISHAY sir188dp.pdf SIR188DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR188LDP-T1-RE3 VISHAY sir188ldp.pdf SIR188LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR401DP-T1-GE3 VISHAY sir401dp.pdf SIR401DP-T1-GE3 SMD P channel transistors
товар відсутній
SIR402DP-T1-GE3 VISHAY sir402dp.pdf SIR402DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR403EDP-T1-GE3 VISHAY sir403edp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -40A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 153nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -60A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR404DP-T1-GE3 VISHAY sir404dp.pdf SIR404DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR410DP-T1-GE3 VISHAY sir410d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
кількість в упаковці: 3000 шт
товар відсутній
SIR414DP-T1-GE3 VISHAY sir414dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR416DP-T1-GE3 VISHAY sir416dp.pdf SIR416DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR418DP-T1-GE3 VISHAY sir418dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR422DP-T1-GE3 SIR422DP-T1-GE3 VISHAY sir422dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2690 шт:
термін постачання 7-14 дні (днів)
4+83.37 грн
5+ 72.7 грн
18+ 52.71 грн
50+ 50.24 грн
Мінімальне замовлення: 4
SIR424DP-T1-GE3 VISHAY sir424dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 30A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 41.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR426DP-T1-GE3 VISHAY sir426dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 70A; 26.7W
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 26.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 31nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
товар відсутній
SIR438DP-T1-GE3 VISHAY sir438dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR440DP-T1-GE3 VISHAY sir440dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR4602LDP-T1-RE3 VISHAY sir4602ldp.pdf SIR4602LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR4604LDP-T1-GE3 VISHAY sir4604ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR4606DP-T1-GE3 VISHAY sir4606dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIR4608DP-T1-GE3 VISHAY sir4608dp.pdf SIR4608DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR460DP-T1-GE3 VISHAY sir460dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR462DP-T1-GE3 VISHAY sir462dp.pdf SIR462DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR464DP-T1-GE3 VISHAY sir464dp.pdf SIR464DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR466DP-T1-GE3 VISHAY sir466dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR470DP-T1-GE3 VISHAY sir470dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 100A; 66.6W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 100A
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.6W
Polarisation: unipolar
Gate charge: 155nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
SIR474DP-T1-GE3 VISHAY sir474dp.pdf SIR474DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR500DP-T1-RE3 VISHAY sir500dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 350.8A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 350.8A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.1W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
кількість в упаковці: 3000 шт
товар відсутній
SIR5102DP-T1-RE3 VISHAY sir5102dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR510DP-T1-RE3 VISHAY sir510dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR516DP-T1-RE3 VISHAY sir516dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR5708DP-T1-RE3 VISHAY sir5708dp.pdf SIR5708DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR570DP-T1-RE3 VISHAY sir570dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR572DP-T1-RE3 VISHAY sir572dp.pdf SIR572DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR574DP-T1-RE3 VISHAY SIR574DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR576DP-T1-RE3 VISHAY sir576dp.pdf SIR576DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR578DP-T1-RE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR5802DP-T1-RE3 VISHAY sir5802dp.pdf SIR5802DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR580DP-T1-RE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
кількість в упаковці: 3000 шт
товар відсутній
SIR582DP-T1-RE3 VISHAY sir582dp.pdf SIR582DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR584DP-T1-RE3 VISHAY sir584dp.pdf SIR584DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR606BDP-T1-RE3 VISHAY sir606bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR606DP-T1-GE3 VISHAY sir606dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR608DP-T1-RE3 VISHAY sir608dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR610DP-T1-RE3 VISHAY sir610dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR616DP-T1-GE3 VISHAY sir616dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR618DP-T1-GE3 VISHAY sir618dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR622DP-T1-GE3 VISHAY sir622dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR622DP-T1-RE3 VISHAY sir622dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5984 шт:
термін постачання 7-14 дні (днів)
3+115.3 грн
10+ 100.06 грн
14+ 72.47 грн
37+ 69.18 грн
3000+ 66.71 грн
Мінімальне замовлення: 3
SIR165DP-T1-GE3 sir165dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
кількість в упаковці: 3000 шт
товар відсутній
SIR166DP-T1-GE3 sir166dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR167DP-T1-GE3 sir167dp.pdf
Виробник: VISHAY
SIR167DP-T1-GE3 SMD P channel transistors
товар відсутній
SIR170DP-T1-RE3 sir170dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR172ADP-T1-GE3 sir172adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 44nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 3000 шт
товар відсутній
SIR178DP-T1-RE3 sir178dp.pdf
Виробник: VISHAY
SIR178DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR180ADP-T1-RE3 doc?77601
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR180DP-T1-RE3 sir180dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
кількість в упаковці: 3000 шт
товар відсутній
SIR182DP-T1-RE3 sir182dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 117A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR182LDP-T1-RE3 sir182ldp.pdf
Виробник: VISHAY
SIR182LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR184DP-T1-RE3 sir184dp.pdf
Виробник: VISHAY
SIR184DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR186DP-T1-RE3 sir186dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIR186LDP-T1-RE3 sir186ldp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIR188DP-T1-RE3 sir188dp.pdf
Виробник: VISHAY
SIR188DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR188LDP-T1-RE3 sir188ldp.pdf
Виробник: VISHAY
SIR188LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR401DP-T1-GE3 sir401dp.pdf
Виробник: VISHAY
SIR401DP-T1-GE3 SMD P channel transistors
товар відсутній
SIR402DP-T1-GE3 sir402dp.pdf
Виробник: VISHAY
SIR402DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR403EDP-T1-GE3 sir403edp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -40A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 153nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -60A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR404DP-T1-GE3 sir404dp.pdf
Виробник: VISHAY
SIR404DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR410DP-T1-GE3 sir410d.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
кількість в упаковці: 3000 шт
товар відсутній
SIR414DP-T1-GE3 sir414dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR416DP-T1-GE3 sir416dp.pdf
Виробник: VISHAY
SIR416DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR418DP-T1-GE3 sir418dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR422DP-T1-GE3 sir422dp.pdf
SIR422DP-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2690 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+83.37 грн
5+ 72.7 грн
18+ 52.71 грн
50+ 50.24 грн
Мінімальне замовлення: 4
SIR424DP-T1-GE3 sir424dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 30A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 41.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR426DP-T1-GE3 sir426dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 70A; 26.7W
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 26.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 31nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
товар відсутній
SIR438DP-T1-GE3 sir438dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR440DP-T1-GE3 sir440dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR4602LDP-T1-RE3 sir4602ldp.pdf
Виробник: VISHAY
SIR4602LDP-T1-RE3 SMD N channel transistors
товар відсутній
SIR4604LDP-T1-GE3 sir4604ldp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
SIR4606DP-T1-GE3 sir4606dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIR4608DP-T1-GE3 sir4608dp.pdf
Виробник: VISHAY
SIR4608DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR460DP-T1-GE3 sir460dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR462DP-T1-GE3 sir462dp.pdf
Виробник: VISHAY
SIR462DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR464DP-T1-GE3 sir464dp.pdf
Виробник: VISHAY
SIR464DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR466DP-T1-GE3 sir466dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR470DP-T1-GE3 sir470dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 100A; 66.6W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 100A
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.6W
Polarisation: unipolar
Gate charge: 155nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
SIR474DP-T1-GE3 sir474dp.pdf
Виробник: VISHAY
SIR474DP-T1-GE3 SMD N channel transistors
товар відсутній
SIR500DP-T1-RE3 sir500dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 350.8A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 350.8A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.1W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
кількість в упаковці: 3000 шт
товар відсутній
SIR5102DP-T1-RE3 sir5102dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR510DP-T1-RE3 sir510dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR516DP-T1-RE3 sir516dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR5708DP-T1-RE3 sir5708dp.pdf
Виробник: VISHAY
SIR5708DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR570DP-T1-RE3 sir570dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR572DP-T1-RE3 sir572dp.pdf
Виробник: VISHAY
SIR572DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR574DP-T1-RE3
Виробник: VISHAY
SIR574DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR576DP-T1-RE3 sir576dp.pdf
Виробник: VISHAY
SIR576DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR578DP-T1-RE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR5802DP-T1-RE3 sir5802dp.pdf
Виробник: VISHAY
SIR5802DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR580DP-T1-RE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
кількість в упаковці: 3000 шт
товар відсутній
SIR582DP-T1-RE3 sir582dp.pdf
Виробник: VISHAY
SIR582DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR584DP-T1-RE3 sir584dp.pdf
Виробник: VISHAY
SIR584DP-T1-RE3 SMD N channel transistors
товар відсутній
SIR606BDP-T1-RE3 sir606bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR606DP-T1-GE3 sir606dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR608DP-T1-RE3 sir608dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR610DP-T1-RE3 sir610dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR616DP-T1-GE3 sir616dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR618DP-T1-GE3 sir618dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiR622DP-T1-GE3 sir622dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR622DP-T1-RE3 sir622dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5984 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+115.3 грн
10+ 100.06 грн
14+ 72.47 грн
37+ 69.18 грн
3000+ 66.71 грн
Мінімальне замовлення: 3
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