| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| SiS406DN-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.2A Pulsed drain current: 50A Power dissipation: 2.3W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2997 шт: термін постачання 7-14 дні (днів) |
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| SIS407ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIS407DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -25A Pulsed drain current: -40A Power dissipation: 21W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 93.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W кількість в упаковці: 1 шт |
товар відсутній |
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| SIS412DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 10W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS413DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS415DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS427EDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -44.3A Pulsed drain current: -110A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS429DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS434DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 17.6A Pulsed drain current: 60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIS435DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -30A Pulsed drain current: -80A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 14mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SiS438DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 16A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 17.5W Polarisation: unipolar Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Case: PowerPAK® 1212-8 кількість в упаковці: 1 шт |
товар відсутній |
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| SIS443DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIS444DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS447DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 181nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS454DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 35A Pulsed drain current: 100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS4604LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A Mounting: SMD Drain-source voltage: 60V Drain current: 36.7A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 21.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerPAK® 1212-8 кількість в упаковці: 1 шт |
товар відсутній |
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| SIS4608LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 28.9A Pulsed drain current: 100A Power dissipation: 17.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS468DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 29.2A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 29.2A Pulsed drain current: 60A Power dissipation: 33.3W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS472ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A; 18W Drain-source voltage: 30V Drain current: 24A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 44nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товар відсутній |
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| SIS472BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30.6A Pulsed drain current: 70A Power dissipation: 12.7W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS472DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 18W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS476DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 80A Power dissipation: 43W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIS488DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS606BDN-T1-GE3 | VISHAY | SIS606BDN-T1-GE3 SMD N channel transistors |
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| SIS698DN-T1-GE3 | VISHAY | SIS698DN-T1-GE3 SMD N channel transistors |
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| SIS780DN-T1-GE3 | VISHAY |
SIS780DN-T1-GE3 SMD N channel transistors |
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| SIS822DNT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 12A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 10W Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A кількість в упаковці: 5 шт |
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| SIS862ADN-T1-GE3 | VISHAY |
SIS862ADN-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIS862DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| SIS888DN-T1-GE3 | VISHAY |
SIS888DN-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIS890ADN-T1-GE3 | VISHAY |
SIS890ADN-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIS890DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33W On-state resistance: 23.5mΩ Mounting: SMD Pulsed drain current: 60A Power dissipation: 33W Gate charge: 29nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® 1212-8 кількість в упаковці: 3000 шт |
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| SIS892ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS892DN-T1-GE3 | VISHAY |
SIS892DN-T1-GE3 SMD N channel transistors |
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| SIS903DN-T1-GE3 | VISHAY |
SIS903DN-T1-GE3 SMD P channel transistors |
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| SIS932EDN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 40A Power dissipation: 14.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIS990DN-T1-GE3 | VISHAY |
SIS990DN-T1-GE3 Multi channel transistors |
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| SISA01DN-T1-GE3 | VISHAY |
SISA01DN-T1-GE3 SMD P channel transistors |
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| SISA04DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 80A Power dissipation: 43W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISA10DN-T1-GE3 | VISHAY |
SISA10DN-T1-GE3 SMD N channel transistors |
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| SISA12ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 80A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 80A Power dissipation: 18W Case: PowerPAK® 1212-8 On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SISA14BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 130A; 29W Mounting: SMD Technology: TrenchFET® Power dissipation: 29W Pulsed drain current: 130A Gate-source voltage: ±20/±-16V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 58A On-state resistance: 7.02mΩ Gate charge: 22nC Case: PowerPAK® 1212-8 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced |
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| SISA14DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W Mounting: SMD Technology: TrenchFET® Power dissipation: 17W Pulsed drain current: 80A Gate-source voltage: ±20/±-16V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 20A On-state resistance: 8.5mΩ Gate charge: 29nC Case: PowerPAK® 1212-8 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced |
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| SISA18ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 70A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 30.6A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 12.7W кількість в упаковці: 1 шт |
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| SISA24DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 150A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20/±-16V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISA35DN-T1-GE3 | VISHAY |
SISA35DN-T1-GE3 SMD P channel transistors |
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| SISA40DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 129A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 129A Pulsed drain current: 150A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 42mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISA72ADN-T1-GE3 | VISHAY |
SISA72ADN-T1-GE3 SMD N channel transistors |
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| SISA72DN-T1-GE3 | VISHAY |
SISA72DN-T1-GE3 SMD N channel transistors |
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| SISA88DN-T1-GE3 | VISHAY |
SISA88DN-T1-GE3 SMD N channel transistors |
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| SiSA96DN-T1-GE3 | VISHAY |
SISA96DN-T1-GE3 SMD N channel transistors |
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| SISB46DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 27.3A On-state resistance: 15.8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 14.8W Polarisation: unipolar Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 70A кількість в упаковці: 1 шт |
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| SISC06DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 29.6W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISF00DN-T1-GE3 | VISHAY |
SISF00DN-T1-GE3 Multi channel transistors |
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| SISF02DN-T1-GE3 | VISHAY |
SISF02DN-T1-GE3 Multi channel transistors |
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| SISF06DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 81A Pulsed drain current: 190A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 6.95mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISF20DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 100A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SISH101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 33W Kind of package: reel; tape Polarisation: unipolar Gate charge: 102nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -35A On-state resistance: 13mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| SISH106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 15.6A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
| SiS406DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2997 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 55.45 грн |
| 25+ | 38.61 грн |
| 68+ | 36.97 грн |
| SIS407ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS407DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS410DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
кількість в упаковці: 1 шт
товар відсутній
| SIS412DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS413DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS415DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS427EDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS429DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS434DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS435DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SiS438DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
товар відсутній
| SIS443DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIS444DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS447DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS454DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS4604LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 36.7A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 36.7A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
товар відсутній
| SIS4608LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS468DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 29.2A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29.2A
Pulsed drain current: 60A
Power dissipation: 33.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 29.2A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29.2A
Pulsed drain current: 60A
Power dissipation: 33.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS472ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A; 18W
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 44nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A; 18W
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 44nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товар відсутній
| SIS472BDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30.6A
Pulsed drain current: 70A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30.6A
Pulsed drain current: 70A
Power dissipation: 12.7W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS472DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS476DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS488DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS822DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 10W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 10W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
кількість в упаковці: 5 шт
товар відсутній
| SIS862DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| SIS890DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33W
On-state resistance: 23.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 33W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33W
On-state resistance: 23.5mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 33W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
| SIS892ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIS932EDN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 14.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 14.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISA04DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISA12ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SISA14BDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 130A; 29W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 29W
Pulsed drain current: 130A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 7.02mΩ
Gate charge: 22nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 130A; 29W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 29W
Pulsed drain current: 130A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 7.02mΩ
Gate charge: 22nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SISA14DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 17W
Pulsed drain current: 80A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 8.5mΩ
Gate charge: 29nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 17W
Pulsed drain current: 80A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 8.5mΩ
Gate charge: 29nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SISA18ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 30.6A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 12.7W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 30.6A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 12.7W
кількість в упаковці: 1 шт
товар відсутній
| SISA24DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISA40DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 129A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 129A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 129A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 129A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISB46DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 27.3A
On-state resistance: 15.8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 14.8W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 27.3A
On-state resistance: 15.8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 14.8W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
товар відсутній
| SISC06DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISF06DN-T1-GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISF20DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SISH101DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 33W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 102nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -35A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| SISH106DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Power dissipation: 2W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 15.6A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній