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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C6D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 30W Max. forward impulse current: 42A Manufacturer series: C6D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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C6D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 63A Power dissipation: 40.1W Manufacturer series: C6D |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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| C6D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 37W Max. forward impulse current: 57A Manufacturer series: C6D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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C6D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 43W Max. forward impulse current: 68A Manufacturer series: C6D |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
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CAS120M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A Mechanical mounting: screw Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Polarisation: unipolar Operating temperature: -40...125°C Gate-source voltage: -5...20V On-state resistance: 13mΩ Drain current: 138A Pulsed drain current: 480A Power dissipation: 925W Case: 62MM Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| CAS310M17BM3 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 310A Pulsed drain current: 620A Power dissipation: 1.63kW Case: 62MM Gate-source voltage: -8...19V On-state resistance: 4.29mΩ Topology: MOSFET half-bridge Electrical mounting: screw Mechanical mounting: screw Operating temperature: -40...150°C Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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CSD01060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W Mounting: THT Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Load current: 1A Max. off-state voltage: 0.6kV Power dissipation: 21.4W Case: TO220-2 |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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CSD01060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 21.4W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| WAS300M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; 1.2kV; 423A; 1.786kW; SiC Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 423A Power dissipation: 1.786kW Technology: SiC |
на замовлення 1381 шт: термін постачання 14-30 дні (днів) |
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| C6D06065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 30W
Max. forward impulse current: 42A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 30W
Max. forward impulse current: 42A
Manufacturer series: C6D
товару немає в наявності
В кошику
од. на суму грн.
| C6D08065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
на замовлення 37 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.37 грн |
| 10+ | 161.86 грн |
| C6D08065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 37W
Max. forward impulse current: 57A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 37W
Max. forward impulse current: 57A
Manufacturer series: C6D
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 43W
Max. forward impulse current: 68A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 43W
Max. forward impulse current: 68A
Manufacturer series: C6D
на замовлення 45 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 338.69 грн |
| CAS120M12BM2 |
![]() |
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| CAS310M17BM3 |
![]() |
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 310A
Pulsed drain current: 620A
Power dissipation: 1.63kW
Case: 62MM
Gate-source voltage: -8...19V
On-state resistance: 4.29mΩ
Topology: MOSFET half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -40...150°C
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 310A
Pulsed drain current: 620A
Power dissipation: 1.63kW
Case: 62MM
Gate-source voltage: -8...19V
On-state resistance: 4.29mΩ
Topology: MOSFET half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -40...150°C
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Technology: SiC
товару немає в наявності
В кошику
од. на суму грн.
| CSD01060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.6kV
Power dissipation: 21.4W
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.6kV
Power dissipation: 21.4W
Case: TO220-2
на замовлення 66 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.96 грн |
| 10+ | 88.06 грн |
| 20+ | 75.48 грн |
| 50+ | 68.77 грн |
| CSD01060E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 21.4W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 21.4W
товару немає в наявності
В кошику
од. на суму грн.
| WAS300M12BM2 |
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 423A; 1.786kW; SiC
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 423A
Power dissipation: 1.786kW
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 423A; 1.786kW; SiC
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 423A
Power dissipation: 1.786kW
Technology: SiC
на замовлення 1381 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 45505.76 грн |
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