Продукція > WOLFSPEED(CREE) > Всі товари виробника WOLFSPEED(CREE) (112) > Сторінка 2 з 2
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C3M0060065J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Drain-source voltage: 650V Technology: C3M™; SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| C3M0060065K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Technology: C3M™; SiC Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 36A Power dissipation: 125W Drain-source voltage: 900V Case: TO247-3 Technology: C3M™; SiC Kind of channel: enhancement Polarisation: unipolar |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 36A Power dissipation: 125W Drain-source voltage: 900V Case: TO247-3 Technology: C3M™; SiC Kind of channel: enhancement Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 55 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 35A Power dissipation: 113W Drain-source voltage: 900V Case: D2PAK-7 Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Polarisation: unipolar |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 35A Power dissipation: 113W Drain-source voltage: 900V Case: D2PAK-7 Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 113W Drain current: 35A Drain-source voltage: 900V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 54nC On-state resistance: 0.105Ω Drain current: 19.7A Power dissipation: 113.6W Drain-source voltage: 1.2kV Pulsed drain current: 80A |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 54nC On-state resistance: 0.105Ω Drain current: 19.7A Power dissipation: 113.6W Drain-source voltage: 1.2kV Pulsed drain current: 80A кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 14nC Reverse recovery time: 18ns On-state resistance: 75mΩ Drain current: 30A Power dissipation: 113.6W Drain-source voltage: 1.2kV |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 14nC Reverse recovery time: 18ns On-state resistance: 75mΩ Drain current: 30A Power dissipation: 113.6W Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0120090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 24ns Gate charge: 17.3nC On-state resistance: 0.12Ω Drain current: 23A Power dissipation: 97W Drain-source voltage: 900V Case: TO247-3 Technology: C3M™; SiC Kind of channel: enhancement Polarisation: unipolar |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0120090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 24ns Gate charge: 17.3nC On-state resistance: 0.12Ω Drain current: 23A Power dissipation: 97W Drain-source voltage: 900V Case: TO247-3 Technology: C3M™; SiC Kind of channel: enhancement Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 65 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 24ns Gate charge: 17.3nC On-state resistance: 0.12Ω Drain current: 22A Power dissipation: 83W Drain-source voltage: 900V Case: D2PAK-7 Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Polarisation: unipolar |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: -8...19V Reverse recovery time: 24ns Gate charge: 17.3nC On-state resistance: 0.12Ω Drain current: 22A Power dissipation: 83W Drain-source voltage: 900V Case: D2PAK-7 Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 136 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0120100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: D2PAK-7 Mounting: SMD Drain-source voltage: 1kV Gate-source voltage: -8...19V Drain current: 22A Gate charge: 21.5nC Reverse recovery time: 16ns On-state resistance: 0.12Ω Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0120100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: D2PAK-7 Mounting: SMD Drain-source voltage: 1kV Gate-source voltage: -8...19V Drain current: 22A Gate charge: 21.5nC Reverse recovery time: 16ns On-state resistance: 0.12Ω Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Mounting: THT Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 38nC On-state resistance: 256mΩ Power dissipation: 97W Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV |
на замовлення 441 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Mounting: THT Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 38nC On-state resistance: 256mΩ Power dissipation: 97W Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 441 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 20ns Technology: C3M™; SiC |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 20ns Technology: C3M™; SiC кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C4D02120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C4D |
на замовлення 670 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D02120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C4D кількість в упаковці: 1 шт |
на замовлення 670 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 52W Manufacturer series: C4D |
на замовлення 791 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 52W Manufacturer series: C4D кількість в упаковці: 1 шт |
на замовлення 791 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
| C4D05120E | Wolfspeed(CREE) |
C4D05120E SMD Schottky diodes |
на замовлення 177 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||
|
C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Manufacturer series: C4D Power dissipation: 136W |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Manufacturer series: C4D Power dissipation: 136W кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C4D10120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 187W Manufacturer series: C4D |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D10120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 187W Manufacturer series: C4D кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C4D10120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 170W |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D10120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 170W кількість в упаковці: 1 шт |
на замовлення 75 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
| C4D15120D | Wolfspeed(CREE) |
C4D15120D THT Schottky diodes |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||
|
C4D20120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 242W Max. forward voltage: 1.8V Manufacturer series: C4D |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C4D20120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 242W Max. forward voltage: 1.8V Manufacturer series: C4D кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
C4D20120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 176W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| C4D20120H | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 3V Max. forward impulse current: 104A Power dissipation: 106.5W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| C5D10170H | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; 80W; C5D Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Max. forward voltage: 2.5V Load current: 10A Max. forward impulse current: 41A Power dissipation: 80W Max. off-state voltage: 1.7kV Manufacturer series: C5D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| C6D04065A | Wolfspeed(CREE) |
C6D04065A THT Schottky diodes |
на замовлення 92 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||
|
C6D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 63A Power dissipation: 40.1W Manufacturer series: C6D |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C6D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 63A Power dissipation: 40.1W Manufacturer series: C6D кількість в упаковці: 1 шт |
на замовлення 45 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
| C6D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.6V Max. forward impulse current: 57A Power dissipation: 37W Manufacturer series: C6D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
C6D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 47W; C6D Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. forward impulse current: 75A Power dissipation: 47W Manufacturer series: C6D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
C6D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. forward impulse current: 68A Power dissipation: 43W Manufacturer series: C6D |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
C6D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. forward impulse current: 68A Power dissipation: 43W Manufacturer series: C6D кількість в упаковці: 1 шт |
на замовлення 84 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
| CAB450M12XM3 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 438A; screw; Idm: 900A; SiC Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Polarisation: unipolar Operating temperature: -40...175°C Gate-source voltage: -4...15V On-state resistance: 4.7mΩ Drain current: 438A Pulsed drain current: 900A Power dissipation: 1.67kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
CAS120M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A Mechanical mounting: screw Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Polarisation: unipolar Operating temperature: -40...125°C Gate-source voltage: -5...20V On-state resistance: 13mΩ Drain current: 138A Pulsed drain current: 480A Power dissipation: 925W Case: 62MM Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CCB016M12GM3T | Wolfspeed(CREE) |
Category: Transistors - UnclassifiedDescription: CCB016M12GM3T |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
|
CSD01060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 21.4W |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
CSD01060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 21.4W кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
CSD01060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Power dissipation: 21.4W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MOD-PWR-MM-C3M0060065K | Wolfspeed(CREE) |
Category: UnclassifiedDescription: MOD-PWR-MM-C3M0060065K |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
| C3M0060065J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
товару немає в наявності
В кошику
од. на суму грн.
| C3M0060065K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Technology: C3M™; SiC
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Technology: C3M™; SiC
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| C3M0065090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1258.40 грн |
| 5+ | 1051.35 грн |
| 10+ | 985.30 грн |
| 30+ | 943.62 грн |
| C3M0065090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 55 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1510.08 грн |
| 5+ | 1310.14 грн |
| 10+ | 1182.36 грн |
| 30+ | 1132.34 грн |
| C3M0065090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 35A
Power dissipation: 113W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 35A
Power dissipation: 113W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 951.85 грн |
| 50+ | 880.71 грн |
| C3M0065090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 35A
Power dissipation: 113W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 35A
Power dissipation: 113W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 54 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1142.22 грн |
| 50+ | 1097.50 грн |
| C3M0065090J-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
товару немає в наявності
В кошику
од. на суму грн.
| C3M0075120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1443.01 грн |
| 2+ | 802.86 грн |
| 4+ | 758.83 грн |
| C3M0075120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1731.62 грн |
| 2+ | 1000.49 грн |
| 4+ | 910.59 грн |
| C3M0075120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1216.06 грн |
| 2+ | 877.57 грн |
| 3+ | 829.60 грн |
| C3M0075120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1459.27 грн |
| 2+ | 1093.58 грн |
| 3+ | 995.52 грн |
| 50+ | 968.15 грн |
| 500+ | 958.72 грн |
| C3M0120090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 23A
Power dissipation: 97W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 23A
Power dissipation: 97W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 634.28 грн |
| 30+ | 565.39 грн |
| C3M0120090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 23A
Power dissipation: 97W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 23A
Power dissipation: 97W
Drain-source voltage: 900V
Case: TO247-3
Technology: C3M™; SiC
Kind of channel: enhancement
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 65 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 761.14 грн |
| 30+ | 704.56 грн |
| C3M0120090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 22A
Power dissipation: 83W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 22A
Power dissipation: 83W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 796.03 грн |
| 3+ | 648.74 грн |
| 10+ | 596.05 грн |
| C3M0120090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 22A
Power dissipation: 83W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Gate charge: 17.3nC
On-state resistance: 0.12Ω
Drain current: 22A
Power dissipation: 83W
Drain-source voltage: 900V
Case: D2PAK-7
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 955.23 грн |
| 3+ | 808.43 грн |
| 10+ | 715.26 грн |
| C3M0120100J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: D2PAK-7
Mounting: SMD
Drain-source voltage: 1kV
Gate-source voltage: -8...19V
Drain current: 22A
Gate charge: 21.5nC
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: D2PAK-7
Mounting: SMD
Drain-source voltage: 1kV
Gate-source voltage: -8...19V
Drain current: 22A
Gate charge: 21.5nC
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 786.71 грн |
| 10+ | 658.96 грн |
| C3M0120100J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: D2PAK-7
Mounting: SMD
Drain-source voltage: 1kV
Gate-source voltage: -8...19V
Drain current: 22A
Gate charge: 21.5nC
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: D2PAK-7
Mounting: SMD
Drain-source voltage: 1kV
Gate-source voltage: -8...19V
Drain current: 22A
Gate charge: 21.5nC
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 944.06 грн |
| 10+ | 821.17 грн |
| 30+ | 747.35 грн |
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
на замовлення 441 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 550.45 грн |
| 10+ | 459.23 грн |
| 30+ | 393.96 грн |
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 441 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 660.53 грн |
| 10+ | 572.27 грн |
| 30+ | 472.75 грн |
| 510+ | 413.31 грн |
| C3M0280090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 531.81 грн |
| 3+ | 321.62 грн |
| 8+ | 303.53 грн |
| C3M0280090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 638.18 грн |
| 3+ | 400.78 грн |
| 8+ | 364.24 грн |
| 50+ | 351.03 грн |
| C4D02120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
на замовлення 670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.30 грн |
| 5+ | 128.96 грн |
| 10+ | 112.45 грн |
| 25+ | 95.15 грн |
| 50+ | 84.93 грн |
| 100+ | 76.28 грн |
| 500+ | 75.49 грн |
| C4D02120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
кількість в упаковці: 1 шт
на замовлення 670 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.57 грн |
| 5+ | 160.71 грн |
| 10+ | 134.94 грн |
| 25+ | 114.18 грн |
| 50+ | 101.91 грн |
| 100+ | 91.53 грн |
| 500+ | 90.59 грн |
| C4D02120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
на замовлення 791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 176.99 грн |
| 5+ | 129.75 грн |
| 10+ | 115.59 грн |
| 40+ | 91.22 грн |
| 75+ | 82.57 грн |
| 150+ | 78.64 грн |
| C4D02120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
кількість в упаковці: 1 шт
на замовлення 791 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.39 грн |
| 5+ | 161.69 грн |
| 10+ | 138.71 грн |
| 40+ | 109.46 грн |
| 75+ | 99.08 грн |
| 150+ | 94.36 грн |
| C4D05120E |
![]() |
Виробник: Wolfspeed(CREE)
C4D05120E SMD Schottky diodes
C4D05120E SMD Schottky diodes
на замовлення 177 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 535.54 грн |
| 5+ | 251.95 грн |
| 13+ | 237.79 грн |
| C4D10120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 669.85 грн |
| 3+ | 402.61 грн |
| 7+ | 380.59 грн |
| C4D10120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 803.82 грн |
| 3+ | 501.72 грн |
| 7+ | 456.71 грн |
| 50+ | 450.11 грн |
| 100+ | 438.78 грн |
| C4D10120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 591.94 грн |
| 5+ | 505.62 грн |
| C4D10120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 710.33 грн |
| 5+ | 630.08 грн |
| 10+ | 553.91 грн |
| 30+ | 433.12 грн |
| 120+ | 432.18 грн |
| C4D10120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 473.38 грн |
| 3+ | 380.59 грн |
| 7+ | 359.36 грн |
| 75+ | 345.99 грн |
| C4D10120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
кількість в упаковці: 1 шт
на замовлення 75 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 568.06 грн |
| 3+ | 474.28 грн |
| 7+ | 431.23 грн |
| 75+ | 415.19 грн |
| C4D15120D |
![]() |
Виробник: Wolfspeed(CREE)
C4D15120D THT Schottky diodes
C4D15120D THT Schottky diodes
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 641.23 грн |
| 5+ | 619.02 грн |
| C4D20120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 242W
Max. forward voltage: 1.8V
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 242W
Max. forward voltage: 1.8V
Manufacturer series: C4D
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1005.20 грн |
| 10+ | 836.68 грн |
| 25+ | 775.34 грн |
| C4D20120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 242W
Max. forward voltage: 1.8V
Manufacturer series: C4D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 242W
Max. forward voltage: 1.8V
Manufacturer series: C4D
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1206.24 грн |
| 10+ | 1042.63 грн |
| 25+ | 930.41 грн |
| 50+ | 890.78 грн |
| C4D20120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D20120H |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C5D10170H |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; 80W; C5D
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Load current: 10A
Max. forward impulse current: 41A
Power dissipation: 80W
Max. off-state voltage: 1.7kV
Manufacturer series: C5D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; 80W; C5D
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Load current: 10A
Max. forward impulse current: 41A
Power dissipation: 80W
Max. off-state voltage: 1.7kV
Manufacturer series: C5D
товару немає в наявності
В кошику
од. на суму грн.
| C6D04065A |
![]() |
Виробник: Wolfspeed(CREE)
C6D04065A THT Schottky diodes
C6D04065A THT Schottky diodes
на замовлення 92 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.84 грн |
| 13+ | 89.64 грн |
| 35+ | 84.93 грн |
| C6D08065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.00 грн |
| 10+ | 219.39 грн |
| 20+ | 185.58 грн |
| C6D08065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.40 грн |
| 10+ | 273.40 грн |
| 20+ | 222.69 грн |
| 50+ | 158.53 грн |
| C6D08065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 57A
Power dissipation: 37W
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 57A
Power dissipation: 37W
Manufacturer series: C6D
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 47W; C6D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 75A
Power dissipation: 47W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 47W; C6D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 75A
Power dissipation: 47W
Manufacturer series: C6D
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 375.15 грн |
| 5+ | 188.72 грн |
| 14+ | 178.50 грн |
| C6D10065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
кількість в упаковці: 1 шт
на замовлення 84 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 450.18 грн |
| 5+ | 235.18 грн |
| 14+ | 214.20 грн |
| 150+ | 206.65 грн |
| CAB450M12XM3 |
![]() |
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 438A; screw; Idm: 900A; SiC
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...175°C
Gate-source voltage: -4...15V
On-state resistance: 4.7mΩ
Drain current: 438A
Pulsed drain current: 900A
Power dissipation: 1.67kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 438A; screw; Idm: 900A; SiC
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...175°C
Gate-source voltage: -4...15V
On-state resistance: 4.7mΩ
Drain current: 438A
Pulsed drain current: 900A
Power dissipation: 1.67kW
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| CAS120M12BM2 |
![]() |
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| CCB016M12GM3T |
![]() |
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19606.87 грн |
| CSD01060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.50 грн |
| 10+ | 81.78 грн |
| 20+ | 69.99 грн |
| 50+ | 63.69 грн |
| CSD01060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.80 грн |
| 10+ | 101.91 грн |
| 20+ | 83.98 грн |
| 50+ | 76.43 грн |
| 100+ | 68.88 грн |
| 250+ | 64.17 грн |
| 500+ | 58.50 грн |
| CSD01060E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Power dissipation: 21.4W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Power dissipation: 21.4W
товару немає в наявності
В кошику
од. на суму грн.
| MOD-PWR-MM-C3M0060065K |
![]() |
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12144.52 грн |
| 3+ | 10149.43 грн |
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2









