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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Mounting: THT Power dissipation: 125W Drain current: 17.7A Drain-source voltage: 1.2kV Technology: SiC; Z-FET™ Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Polarisation: unipolar Gate-source voltage: -10...25V Reverse recovery time: 23ns Gate charge: 34nC On-state resistance: 196mΩ |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C3D Power dissipation: 39.5W |
на замовлення 441 шт: термін постачання 14-30 дні (днів) |
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| C3D02060E-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 17W Manufacturer series: C3D Max. forward voltage: 1.7V Max. forward impulse current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
на замовлення 506 шт: термін постачання 14-30 дні (днів) |
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C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 39.5W Manufacturer series: C3D |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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C3D03060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Power dissipation: 53W Manufacturer series: C3D |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Mounting: THT Manufacturer series: C3D Load current: 4A Power dissipation: 75W Max. off-state voltage: 0.6kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO220-2 |
на замовлення 540 шт: термін постачання 14-30 дні (днів) |
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Manufacturer series: C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Type of diode: Schottky rectifying Case: TO252-2 Load current: 4A Max. off-state voltage: 0.6kV Power dissipation: 75W |
на замовлення 243 шт: термін постачання 14-30 дні (днів) |
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C3D04060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Power dissipation: 13.1W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Mounting: THT Manufacturer series: C3D Load current: 6A Power dissipation: 79W Max. off-state voltage: 0.6kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO220-2 |
на замовлення 2431 шт: термін постачання 14-30 дні (днів) |
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C3D06060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D Mounting: SMD Case: TO263-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Load current: 6A Power dissipation: 91W Max. off-state voltage: 0.6kV Manufacturer series: C3D |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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| C3D06060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 2V Power dissipation: 39W Max. forward impulse current: 49A Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D06065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D08060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D Mounting: THT Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Case: TO220-2 Load current: 8A Power dissipation: 110W Max. off-state voltage: 0.6kV Manufacturer series: C3D |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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C3D08060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Power dissipation: 107W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D08065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 48W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Mounting: THT Manufacturer series: C3D Load current: 10A Power dissipation: 136W Max. off-state voltage: 0.6kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO220-2 |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Mounting: SMD Manufacturer series: C3D Load current: 10A Power dissipation: 136W Max. off-state voltage: 0.6kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO263-2 |
на замовлення 406 шт: термін постачання 14-30 дні (днів) |
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| C3D10060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Case: TO263-2 Max. forward voltage: 2V Load current: 10A Power dissipation: 54W Max. forward impulse current: 71A Max. off-state voltage: 0.6kV Manufacturer series: C3D Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: THT Case: TO220-2 Load current: 10A Power dissipation: 136.5W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Case: TO252-2 Load current: 10A Power dissipation: 150W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D10065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: THT Case: TO220-2 Max. forward voltage: 1.8V Load current: 10A Power dissipation: 60W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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C3D20060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Mounting: THT Manufacturer series: C3D Load current: 10A x2 Power dissipation: 250W Max. off-state voltage: 0.6kV Semiconductor structure: common cathode; double Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO247-3 |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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C3D20065D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Power dissipation: 250W Case: TO247-3 Mounting: THT Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Load current: 10A x2 Max. off-state voltage: 650V Manufacturer series: C3D Semiconductor structure: common cathode; double |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 200A Power dissipation: 469W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 38mΩ Mounting: THT Gate charge: 162nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 34ns |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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C3M0040120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 99nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 30ns |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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| C3M0060065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| C3M0060065J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Drain-source voltage: 650V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Mounting: THT Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 125W Drain current: 36A Drain-source voltage: 900V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: C3M™; SiC Case: TO247-3 Polarisation: unipolar |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC Reverse recovery time: 16ns On-state resistance: 78mΩ Drain current: 35A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC Reverse recovery time: 16ns On-state resistance: 78mΩ Drain current: 35A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0065100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.5W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9nC Reverse recovery time: 14ns On-state resistance: 65mΩ Drain current: 35A Drain-source voltage: 1kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Mounting: THT Gate-source voltage: -8...19V Gate charge: 54nC On-state resistance: 0.105Ω Power dissipation: 113.6W Drain current: 19.7A Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET Technology: C3M™; SiC Case: TO247-3 Polarisation: unipolar |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.6W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 14nC Reverse recovery time: 18ns On-state resistance: 75mΩ Drain current: 30A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Case: TO247-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 38nC On-state resistance: 256mΩ Drain current: 12A Pulsed drain current: 34A Power dissipation: 97W Drain-source voltage: 1.2kV Technology: C3M™; SiC |
на замовлення 426 шт: термін постачання 14-30 дні (днів) |
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| C3M0160120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 90W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 24nC On-state resistance: 256mΩ Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 50W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9.5nC Reverse recovery time: 20ns On-state resistance: 0.28Ω Drain current: 11A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| C3M0350120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 13nC On-state resistance: 525mΩ Drain current: 5A Pulsed drain current: 20A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| C3M0350120J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate charge: 13nC Drain current: 7.2A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| C3M0900170D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 52W |
на замовлення 621 шт: термін постачання 14-30 дні (днів) |
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C4D05120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Mounting: THT Manufacturer series: C4D Load current: 5A Power dissipation: 81W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO220-2 |
на замовлення 848 шт: термін постачання 14-30 дні (днів) |
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C4D05120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Power dissipation: 97W Manufacturer series: C4D |
на замовлення 149 шт: термін постачання 14-30 дні (днів) |
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C4D08120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 3V Power dissipation: 137W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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C4D10120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 187W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C4D10120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 170W Manufacturer series: C4D |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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C4D10120H | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 66W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.8V Power dissipation: 66W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C4D20120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D Mounting: THT Manufacturer series: C4D Max. forward voltage: 1.8V Load current: 20A Power dissipation: 242W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Case: TO220-2 |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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C4D20120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 176W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| C4D20120H | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 3V Max. forward impulse current: 104A Power dissipation: 106.5W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C4D30120D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 220W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 220W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C6D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 26W Manufacturer series: C6D |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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| C2M0160120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 817.36 грн |
| C3D02060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
на замовлення 441 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 130.06 грн |
| 5+ | 93.51 грн |
| 20+ | 63.91 грн |
| 50+ | 56.78 грн |
| 75+ | 54.09 грн |
| 150+ | 49.82 грн |
| C3D02060E-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward voltage: 1.7V
Max. forward impulse current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward voltage: 1.7V
Max. forward impulse current: 15A
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
на замовлення 506 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.51 грн |
| 10+ | 63.65 грн |
| 50+ | 44.36 грн |
| 100+ | 40.67 грн |
| 500+ | 37.07 грн |
| C3D02065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 39.5W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 39.5W
Manufacturer series: C3D
на замовлення 250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.06 грн |
| 25+ | 52.50 грн |
| 75+ | 40.93 грн |
| 150+ | 36.90 грн |
| C3D03060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Power dissipation: 53W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Power dissipation: 53W
Manufacturer series: C3D
на замовлення 148 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.80 грн |
| 25+ | 80.51 грн |
| 75+ | 56.19 грн |
| C3D04060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
на замовлення 540 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.57 грн |
| 10+ | 83.03 грн |
| 50+ | 71.29 грн |
| C3D04060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Case: TO252-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Case: TO252-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
на замовлення 243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 147.22 грн |
| 10+ | 105.67 грн |
| 20+ | 92.25 грн |
| 50+ | 77.16 грн |
| 75+ | 71.29 грн |
| C3D04060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D04065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.60 грн |
| 5+ | 102.32 грн |
| C3D04065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.76 грн |
| C3D06060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 6A
Power dissipation: 79W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 6A
Power dissipation: 79W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
на замовлення 2431 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 216.76 грн |
| 5+ | 161.86 грн |
| 10+ | 142.57 грн |
| 25+ | 119.09 грн |
| 50+ | 104.83 грн |
| 100+ | 99.80 грн |
| C3D06060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Mounting: SMD
Case: TO263-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 6A
Power dissipation: 91W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Mounting: SMD
Case: TO263-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 6A
Power dissipation: 91W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.25 грн |
| 10+ | 113.22 грн |
| C3D06060G-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
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| C3D06065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Power dissipation: 100W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Power dissipation: 100W
Manufacturer series: C3D
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| C3D06065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
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| C3D08060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Case: TO220-2
Load current: 8A
Power dissipation: 110W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Case: TO220-2
Load current: 8A
Power dissipation: 110W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 198.70 грн |
| 10+ | 132.51 грн |
| C3D08060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
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| C3D08065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.60 грн |
| C3D08065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
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| C3D08065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
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| C3D10060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 10A
Power dissipation: 136W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 10A
Power dissipation: 136W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
на замовлення 213 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.20 грн |
| 10+ | 178.63 грн |
| C3D10060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Mounting: SMD
Manufacturer series: C3D
Load current: 10A
Power dissipation: 136W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO263-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Mounting: SMD
Manufacturer series: C3D
Load current: 10A
Power dissipation: 136W
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO263-2
на замовлення 406 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 302.56 грн |
| 10+ | 238.18 грн |
| 25+ | 209.66 грн |
| 100+ | 187.02 грн |
| C3D10060G-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO263-2
Max. forward voltage: 2V
Load current: 10A
Power dissipation: 54W
Max. forward impulse current: 71A
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO263-2
Max. forward voltage: 2V
Load current: 10A
Power dissipation: 54W
Max. forward impulse current: 71A
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Type of diode: Schottky rectifying
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| C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Load current: 10A
Power dissipation: 136.5W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Load current: 10A
Power dissipation: 136.5W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
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| C3D10065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
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| C3D10065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.8V
Load current: 10A
Power dissipation: 60W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.8V
Load current: 10A
Power dissipation: 60W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 329.65 грн |
| C3D20060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Mounting: THT
Manufacturer series: C3D
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Mounting: THT
Manufacturer series: C3D
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO247-3
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 434.42 грн |
| 6+ | 357.26 грн |
| 10+ | 338.81 грн |
| 15+ | 322.88 грн |
| 30+ | 306.11 грн |
| C3D20065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Load current: 10A x2
Max. off-state voltage: 650V
Manufacturer series: C3D
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Load current: 10A x2
Max. off-state voltage: 650V
Manufacturer series: C3D
Semiconductor structure: common cathode; double
на замовлення 88 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 585.25 грн |
| 5+ | 425.20 грн |
| 10+ | 369.84 грн |
| C3M0021120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2458.40 грн |
| 2+ | 2203.13 грн |
| 5+ | 2110.88 грн |
| 10+ | 1820.71 грн |
| 30+ | 1668.07 грн |
| C3M0040120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
на замовлення 12 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 849.87 грн |
| 5+ | 774.91 грн |
| C3M0040120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 99nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 99nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 30ns
на замовлення 25 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1202.11 грн |
| 2+ | 1070.12 грн |
| 5+ | 1024.83 грн |
| C3M0060065D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
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| C3M0060065J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0065090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Case: TO247-3
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Case: TO247-3
Polarisation: unipolar
на замовлення 146 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1264.43 грн |
| 5+ | 1017.28 грн |
| 10+ | 903.23 грн |
| 30+ | 764.85 грн |
| C3M0065090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0065090J-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0065100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0075120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Mounting: THT
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Power dissipation: 113.6W
Drain current: 19.7A
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Case: TO247-3
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Mounting: THT
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Power dissipation: 113.6W
Drain current: 19.7A
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Case: TO247-3
Polarisation: unipolar
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1199.40 грн |
| 10+ | 980.38 грн |
| C3M0075120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.6W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.6W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
на замовлення 48 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1196.69 грн |
| 5+ | 983.74 грн |
| 10+ | 913.29 грн |
| C3M0120090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0160120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Drain-source voltage: 1.2kV
Technology: C3M™; SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Drain-source voltage: 1.2kV
Technology: C3M™; SiC
на замовлення 426 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 579.83 грн |
| 10+ | 482.22 грн |
| 30+ | 414.29 грн |
| C3M0160120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0280090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9.5nC
Reverse recovery time: 20ns
On-state resistance: 0.28Ω
Drain current: 11A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9.5nC
Reverse recovery time: 20ns
On-state resistance: 0.28Ω
Drain current: 11A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 568.99 грн |
| C3M0350120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| C3M0350120J-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| C3M0900170D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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| C4D02120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
на замовлення 621 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 176.12 грн |
| 5+ | 134.18 грн |
| 10+ | 114.89 грн |
| 25+ | 90.57 грн |
| 40+ | 83.86 грн |
| C4D05120A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Manufacturer series: C4D
Load current: 5A
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Manufacturer series: C4D
Load current: 5A
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
на замовлення 848 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 345.01 грн |
| 10+ | 192.89 грн |
| 40+ | 187.02 грн |
| C4D05120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
на замовлення 149 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 349.52 грн |
| 10+ | 293.53 грн |
| 25+ | 253.27 грн |
| 75+ | 208.82 грн |
| C4D08120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
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| C4D10120A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 570.80 грн |
| 5+ | 421.84 грн |
| 10+ | 392.49 грн |
| C4D10120D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
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| C4D10120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 170W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 170W
Manufacturer series: C4D
на замовлення 32 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 516.61 грн |
| 25+ | 415.13 грн |
| C4D10120H |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 66W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 66W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 66W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 66W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D20120A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Mounting: THT
Manufacturer series: C4D
Max. forward voltage: 1.8V
Load current: 20A
Power dissipation: 242W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Mounting: THT
Manufacturer series: C4D
Max. forward voltage: 1.8V
Load current: 20A
Power dissipation: 242W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Case: TO220-2
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1240.94 грн |
| C4D20120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D20120H |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D30120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 220W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 220W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 220W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 220W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C6D04065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 26W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 26W
Manufacturer series: C6D
на замовлення 79 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.96 грн |
| 10+ | 93.93 грн |
| 50+ | 72.96 грн |
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