Продукція > WOLFSPEED(CREE) > Всі товари виробника WOLFSPEED(CREE) (81) > Сторінка 1 з 2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C2M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns Type of transistor: N-MOSFET Technology: SiC; Z-FET™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Power dissipation: 330W Case: TO247-3 Gate-source voltage: -10...25V On-state resistance: 40mΩ Mounting: THT Gate charge: 115nC Kind of channel: enhancement Reverse recovery time: 54ns |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Technology: SiC; Z-FET™ Mounting: THT Case: TO247-3 Power dissipation: 125W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V On-state resistance: 196mΩ Reverse recovery time: 23ns Gate charge: 34nC Polarisation: unipolar Drain current: 17.7A |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Manufacturer series: C3D Power dissipation: 39.5W Technology: SiC; Z-Rec® |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3D02060E-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 17W Manufacturer series: C3D Max. forward impulse current: 15A Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 246 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D03060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 53W Manufacturer series: C3D |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D03060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 12.5W Manufacturer series: C3D |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 75W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Manufacturer series: C3D Power dissipation: 75W Technology: SiC; Z-Rec® |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D04060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Power dissipation: 13.1W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 52W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 79W Manufacturer series: C3D |
на замовлення 2185 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D06060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 17W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| C3D06060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 2V Power dissipation: 39W Max. forward impulse current: 49A Manufacturer series: C3D |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||
|
C3D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D06065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D08060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 110W Manufacturer series: C3D |
на замовлення 1004 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D08060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Power dissipation: 107W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Manufacturer series: C3D Mounting: THT Power dissipation: 107W Technology: SiC; Z-Rec® Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C3D |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 136W Manufacturer series: C3D |
на замовлення 406 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3D10060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 71A Power dissipation: 54W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Case: TO252-2 Load current: 10A Power dissipation: 150W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D10065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D12065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 62W Manufacturer series: C3D Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 100W Manufacturer series: C3D |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D16065D1 | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO247-3 Power dissipation: 75W Manufacturer series: C3D Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3D20060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3D20065D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3M0015065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 416W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||
| C3M0015065K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 469W Features of semiconductor devices: Kelvin terminal Drain current: 74A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 38mΩ Reverse recovery time: 34ns Pulsed drain current: 200A Gate charge: 162nC Polarisation: unipolar |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3M0032120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||
|
C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||
|
C3M0040120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 326W Features of semiconductor devices: Kelvin terminal Drain current: 48A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 68mΩ Reverse recovery time: 30ns Pulsed drain current: 223A Gate charge: 99nC Polarisation: unipolar |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3M0060065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| C3M0060065J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Drain-source voltage: 650V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Drain current: 36A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 78mΩ Reverse recovery time: 30ns Gate charge: 30.4nC Polarisation: unipolar |
на замовлення 346 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Power dissipation: 113W Gate charge: 30.4nC Polarisation: unipolar Technology: C3M™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 35A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V Case: D2PAK-7 On-state resistance: 78mΩ Reverse recovery time: 16ns Mounting: SMD |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 16ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
|
C3M0065100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.5W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9nC Reverse recovery time: 14ns On-state resistance: 65mΩ Drain current: 35A Drain-source voltage: 1kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 113.6W Drain current: 19.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.105Ω Pulsed drain current: 80A Gate charge: 54nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Technology: C3M™; SiC Mounting: SMD Case: D2PAK-7 Power dissipation: 113.6W Features of semiconductor devices: Kelvin terminal Drain current: 30A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 75mΩ Reverse recovery time: 18ns Gate charge: 14nC Polarisation: unipolar |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3M0075120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: THT Gate charge: 14nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3M0120090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Drain current: 23A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.12Ω Reverse recovery time: 24ns Gate charge: 17.3nC Polarisation: unipolar |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Drain current: 12A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 256mΩ Pulsed drain current: 34A Gate charge: 38nC Polarisation: unipolar |
на замовлення 402 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3M0160120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 90W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 24nC On-state resistance: 256mΩ Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Technology: C3M™; SiC Mounting: SMD Case: D2PAK-7 Power dissipation: 50W Features of semiconductor devices: Kelvin terminal Drain current: 11A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.28Ω Reverse recovery time: 20ns Gate charge: 9.5nC Polarisation: unipolar |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| C3M0350120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 13nC On-state resistance: 525mΩ Drain current: 5A Pulsed drain current: 20A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| C3M0350120J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate charge: 13nC Drain current: 7.2A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||
|
C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Manufacturer series: C4D Power dissipation: 52W Technology: SiC; Z-Rec® |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C4D05120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 81W Manufacturer series: C4D |
на замовлення 710 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C4D05120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 97W Manufacturer series: C4D |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
C4D08120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 3V Power dissipation: 137W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
|
| C2M0040120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3494.74 грн |
| C2M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 842.07 грн |
| C3D02060E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Manufacturer series: C3D
Power dissipation: 39.5W
Technology: SiC; Z-Rec®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Manufacturer series: C3D
Power dissipation: 39.5W
Technology: SiC; Z-Rec®
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 458.15 грн |
| C3D02060E-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060F |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
на замовлення 173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 120.03 грн |
| 10+ | 65.69 грн |
| 50+ | 45.69 грн |
| 100+ | 41.95 грн |
| C3D02065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 246 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.22 грн |
| 25+ | 39.90 грн |
| 68+ | 37.69 грн |
| C3D03060E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.20 грн |
| 17+ | 59.56 грн |
| 45+ | 56.16 грн |
| C3D03060F |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.02 грн |
| C3D04060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D04060E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.60 грн |
| 10+ | 108.91 грн |
| 13+ | 78.28 грн |
| 35+ | 74.02 грн |
| C3D04060F |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D04065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.11 грн |
| C3D04065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.10 грн |
| C3D06060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
на замовлення 2185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.73 грн |
| 5+ | 186.33 грн |
| 9+ | 114.86 грн |
| 24+ | 108.91 грн |
| 250+ | 104.65 грн |
| C3D06060F |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D06060G-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| C3D06065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D06065I |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D08060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
на замовлення 1004 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 324.37 грн |
| 7+ | 154.85 грн |
| 18+ | 146.34 грн |
| 20+ | 140.39 грн |
| C3D08060G |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D08065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Manufacturer series: C3D
Mounting: THT
Power dissipation: 107W
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Manufacturer series: C3D
Mounting: THT
Power dissipation: 107W
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 334.45 грн |
| C3D08065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D10060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C3D
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 384.84 грн |
| 5+ | 206.75 грн |
| 13+ | 195.69 грн |
| C3D10060G |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 344.53 грн |
| 5+ | 200.80 грн |
| 14+ | 189.74 грн |
| C3D10060G-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D10065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 347.99 грн |
| 5+ | 205.05 грн |
| 13+ | 193.99 грн |
| C3D10065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| C3D10065I |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 426.99 грн |
| 4+ | 247.60 грн |
| C3D12065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
товару немає в наявності
В кошику
од. на суму грн.
| C3D16060D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 623.08 грн |
| 4+ | 313.96 грн |
| 9+ | 296.09 грн |
| C3D16065D1 |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
товару немає в наявності
В кошику
од. на суму грн.
| C3D20060D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.30 грн |
| 3+ | 355.65 грн |
| 8+ | 336.08 грн |
| 60+ | 323.32 грн |
| C3D20065D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 665.23 грн |
| 3+ | 404.15 грн |
| 7+ | 381.18 грн |
| 30+ | 366.71 грн |
| C3M0015065D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| C3M0015065K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| C3M0021120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2003.01 грн |
| 2+ | 1758.69 грн |
| C3M0032120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| C3M0040120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| C3M0040120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 933.70 грн |
| 2+ | 821.91 грн |
| 5+ | 792.99 грн |
| C3M0060065D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| C3M0060065J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0065090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
на замовлення 346 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1230.58 грн |
| 2+ | 850.84 грн |
| 4+ | 804.05 грн |
| 30+ | 772.57 грн |
| C3M0065090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Gate charge: 30.4nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Case: D2PAK-7
On-state resistance: 78mΩ
Reverse recovery time: 16ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Gate charge: 30.4nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
Case: D2PAK-7
On-state resistance: 78mΩ
Reverse recovery time: 16ns
Mounting: SMD
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1105.96 грн |
| 3+ | 970.81 грн |
| 10+ | 932.52 грн |
| C3M0065090J-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| C3M0065100J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0075120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Drain current: 19.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Drain current: 19.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| C3M0075120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113.6W
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Gate charge: 14nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113.6W
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Gate charge: 14nC
Polarisation: unipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1050.07 грн |
| 3+ | 927.42 грн |
| C3M0075120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 670.73 грн |
| 2+ | 608.35 грн |
| 5+ | 565.81 грн |
| C3M0120090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 840.24 грн |
| 2+ | 655.15 грн |
| C3M0120090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.87 грн |
| 3+ | 397.34 грн |
| 7+ | 376.07 грн |
| C3M0160120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0280090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 50W
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Reverse recovery time: 20ns
Gate charge: 9.5nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 50W
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Reverse recovery time: 20ns
Gate charge: 9.5nC
Polarisation: unipolar
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 596.51 грн |
| 3+ | 337.78 грн |
| C3M0350120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0350120J-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| C4D02120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Manufacturer series: C4D
Power dissipation: 52W
Technology: SiC; Z-Rec®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Manufacturer series: C4D
Power dissipation: 52W
Technology: SiC; Z-Rec®
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 209.83 грн |
| 5+ | 149.75 грн |
| C4D05120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
на замовлення 710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 394.92 грн |
| 5+ | 216.96 грн |
| 13+ | 205.05 грн |
| 40+ | 198.25 грн |
| C4D05120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.75 грн |
| 5+ | 240.79 грн |
| 12+ | 228.03 грн |
| C4D08120E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D10120A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 693.63 грн |























