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| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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C2M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns Technology: SiC; Z-FET™ Mounting: THT Case: TO247-3 Power dissipation: 330W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V On-state resistance: 40mΩ Reverse recovery time: 54ns Gate charge: 115nC Polarisation: unipolar Drain current: 60A |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Technology: SiC; Z-FET™ Mounting: THT Case: TO247-3 Power dissipation: 125W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V On-state resistance: 196mΩ Reverse recovery time: 23ns Gate charge: 34nC Polarisation: unipolar Drain current: 17.7A |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| C3D02060E-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 17W Manufacturer series: C3D Max. forward impulse current: 15A Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
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C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 246 шт: термін постачання 14-30 дні (днів) |
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C3D03060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 53W Manufacturer series: C3D |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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C3D03060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 12.5W Manufacturer series: C3D |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 75W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Mounting: SMD Manufacturer series: C3D Power dissipation: 75W Technology: SiC; Z-Rec® Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO252-2 Type of diode: Schottky rectifying |
на замовлення 145 шт: термін постачання 14-30 дні (днів) |
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C3D04060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Power dissipation: 13.1W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 52W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 79W Manufacturer series: C3D |
на замовлення 2209 шт: термін постачання 14-30 дні (днів) |
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C3D06060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 17W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| C3D06060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 2V Power dissipation: 39W Max. forward impulse current: 49A Manufacturer series: C3D |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
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C3D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D06065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Power dissipation: 100W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D08060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 110W Manufacturer series: C3D |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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C3D08060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Power dissipation: 107W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C3D |
на замовлення 147 шт: термін постачання 14-30 дні (днів) |
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C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 136W Manufacturer series: C3D |
на замовлення 406 шт: термін постачання 14-30 дні (днів) |
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| C3D10060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 71A Power dissipation: 54W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Case: TO252-2 Load current: 10A Power dissipation: 150W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D10065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C3D Max. forward voltage: 1.8V |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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C3D12065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 62W Manufacturer series: C3D Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 100W Manufacturer series: C3D |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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C3D16065D1 | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO247-3 Power dissipation: 75W Manufacturer series: C3D Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D20060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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C3D20065D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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| C3M0015065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 416W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||||||
| C3M0015065K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 469W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 38mΩ Reverse recovery time: 34ns Pulsed drain current: 200A Gate charge: 162nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 74A |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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| C3M0032120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||||||
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C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||
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C3M0040120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 326W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 68mΩ Reverse recovery time: 30ns Pulsed drain current: 223A Gate charge: 99nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 48A |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| C3M0060065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| C3M0060065J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Drain-source voltage: 650V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 78mΩ Reverse recovery time: 30ns Gate charge: 30.4nC Polarisation: unipolar Drain current: 36A |
на замовлення 530 шт: термін постачання 14-30 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Technology: C3M™; SiC Mounting: SMD Case: D2PAK-7 Power dissipation: 113W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 78mΩ Reverse recovery time: 16ns Gate charge: 30.4nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 35A |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 16ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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C3M0065100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.5W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9nC Reverse recovery time: 14ns On-state resistance: 65mΩ Drain current: 35A Drain-source voltage: 1kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 113.6W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.105Ω Pulsed drain current: 80A Gate charge: 54nC Polarisation: unipolar Drain current: 19.7A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Case: D2PAK-7 Power dissipation: 113.6W Gate charge: 14nC Polarisation: unipolar Technology: C3M™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 30A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 75mΩ Reverse recovery time: 18ns Mounting: SMD |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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C3M0075120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: THT Gate charge: 14nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3M0120090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.12Ω Reverse recovery time: 24ns Gate charge: 17.3nC Polarisation: unipolar Drain current: 23A |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 256mΩ Pulsed drain current: 34A Gate charge: 38nC Polarisation: unipolar Drain current: 12A |
на замовлення 402 шт: термін постачання 14-30 дні (днів) |
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| C3M0160120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 90W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 24nC On-state resistance: 256mΩ Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Technology: C3M™; SiC Mounting: SMD Case: D2PAK-7 Power dissipation: 50W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.28Ω Reverse recovery time: 20ns Gate charge: 9.5nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 11A |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| C3M0350120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 13nC On-state resistance: 525mΩ Drain current: 5A Pulsed drain current: 20A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| C3M0350120J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate charge: 13nC Drain current: 7.2A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
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C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 52W Manufacturer series: C4D |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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C4D05120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 81W Manufacturer series: C4D |
на замовлення 723 шт: термін постачання 14-30 дні (днів) |
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C4D05120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 97W Manufacturer series: C4D |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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C4D08120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 3V Power dissipation: 137W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| C2M0040120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 330W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Reverse recovery time: 54ns
Gate charge: 115nC
Polarisation: unipolar
Drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 330W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Reverse recovery time: 54ns
Gate charge: 115nC
Polarisation: unipolar
Drain current: 60A
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4307.17 грн |
| 3+ | 3529.04 грн |
| 10+ | 3065.26 грн |
| C2M0160120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 830.00 грн |
| C3D02060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.58 грн |
| C3D02060E-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
на замовлення 173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 118.31 грн |
| 10+ | 64.74 грн |
| 50+ | 45.04 грн |
| 100+ | 41.35 грн |
| C3D02065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 246 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.87 грн |
| 25+ | 53.17 грн |
| 75+ | 41.51 грн |
| 150+ | 36.06 грн |
| C3D03060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.70 грн |
| 25+ | 81.35 грн |
| 75+ | 56.19 грн |
| C3D03060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.60 грн |
| C3D04060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D04060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Mounting: SMD
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Mounting: SMD
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Type of diode: Schottky rectifying
на замовлення 145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.76 грн |
| 10+ | 135.02 грн |
| 20+ | 120.77 грн |
| 50+ | 93.09 грн |
| 75+ | 79.67 грн |
| C3D04060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D04065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 120.77 грн |
| C3D04065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.76 грн |
| C3D06060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
на замовлення 2209 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.92 грн |
| 5+ | 171.08 грн |
| 10+ | 150.12 грн |
| 25+ | 126.64 грн |
| 50+ | 112.38 грн |
| 100+ | 102.32 грн |
| 500+ | 100.64 грн |
| C3D06060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
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| C3D06060G-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
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Мінімальне замовлення: 800 шт
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| C3D06065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
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| C3D06065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
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| C3D08060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 202.31 грн |
| 10+ | 176.12 грн |
| 20+ | 166.05 грн |
| C3D08060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
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| C3D08065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.27 грн |
| C3D08065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
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| C3D10060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C3D
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.91 грн |
| 10+ | 205.47 грн |
| 25+ | 181.15 грн |
| C3D10060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.98 грн |
| 10+ | 242.37 грн |
| 25+ | 213.02 грн |
| 100+ | 189.53 грн |
| C3D10060G-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
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| C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
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| C3D10065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
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| C3D10065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 401.00 грн |
| C3D12065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
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| C3D16060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.64 грн |
| 30+ | 328.75 грн |
| 120+ | 295.20 грн |
| C3D16065D1 |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
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| C3D20060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 573.51 грн |
| C3D20065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 593.38 грн |
| 5+ | 431.07 грн |
| 10+ | 370.68 грн |
| 30+ | 359.78 грн |
| C3M0015065D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
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Мінімальне замовлення: 30 шт
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| C3M0015065K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| C3M0021120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2458.40 грн |
| 2+ | 2203.13 грн |
| 5+ | 2110.88 грн |
| 10+ | 1820.71 грн |
| C3M0032120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| C3M0040120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| C3M0040120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1015.15 грн |
| 2+ | 895.68 грн |
| 5+ | 834.46 грн |
| C3M0060065D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| C3M0060065J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0065090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
Drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
Drain current: 36A
на замовлення 530 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1005.22 грн |
| 5+ | 836.97 грн |
| 10+ | 772.40 грн |
| 30+ | 745.56 грн |
| C3M0065090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 16ns
Gate charge: 30.4nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 35A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 16ns
Gate charge: 30.4nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 35A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1085.60 грн |
| 10+ | 900.71 грн |
| C3M0065090J-TR |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| C3M0065100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0075120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
Drain current: 19.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
Drain current: 19.7A
товару немає в наявності
В кошику
од. на суму грн.
| C3M0075120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Power dissipation: 113.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Power dissipation: 113.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Mounting: SMD
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1212.95 грн |
| 5+ | 997.15 грн |
| 10+ | 925.03 грн |
| C3M0075120K |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товару немає в наявності
В кошику
од. на суму грн.
| C3M0120090D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
Drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
Drain current: 23A
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 679.18 грн |
| C3M0120090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
Drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
Drain current: 12A
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 592.47 грн |
| 10+ | 493.13 грн |
| 30+ | 423.52 грн |
| C3M0160120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0280090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 50W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Reverse recovery time: 20ns
Gate charge: 9.5nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Technology: C3M™; SiC
Mounting: SMD
Case: D2PAK-7
Power dissipation: 50W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Reverse recovery time: 20ns
Gate charge: 9.5nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 576.22 грн |
| C3M0350120J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| C3M0350120J-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| C4D02120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 198.70 грн |
| 5+ | 145.09 грн |
| 10+ | 127.47 грн |
| C4D05120A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
на замовлення 723 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 350.43 грн |
| 10+ | 196.24 грн |
| 40+ | 190.37 грн |
| C4D05120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 354.94 грн |
| 10+ | 297.72 грн |
| 25+ | 256.63 грн |
| C4D08120E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
товару немає в наявності
В кошику
од. на суму грн.
| C4D10120A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 623.18 грн |
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