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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C2M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns Type of transistor: N-MOSFET Technology: SiC; Z-FET™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Power dissipation: 330W Case: TO247-3 Gate-source voltage: -10...25V On-state resistance: 40mΩ Mounting: THT Gate charge: 115nC Kind of channel: enhancement Reverse recovery time: 54ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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C2M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns Type of transistor: N-MOSFET Technology: SiC; Z-FET™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Power dissipation: 330W Case: TO247-3 Gate-source voltage: -10...25V On-state resistance: 40mΩ Mounting: THT Gate charge: 115nC Kind of channel: enhancement Reverse recovery time: 54ns кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Mounting: THT Technology: SiC; Z-FET™ Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Polarisation: unipolar Gate-source voltage: -10...25V Reverse recovery time: 23ns Gate charge: 34nC On-state resistance: 196mΩ Power dissipation: 125W Drain current: 17.7A Drain-source voltage: 1.2kV |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Mounting: THT Technology: SiC; Z-FET™ Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Polarisation: unipolar Gate-source voltage: -10...25V Reverse recovery time: 23ns Gate charge: 34nC On-state resistance: 196mΩ Power dissipation: 125W Drain current: 17.7A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C3D Power dissipation: 39.5W |
на замовлення 2197 шт: термін постачання 21-30 дні (днів) |
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C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C3D Power dissipation: 39.5W кількість в упаковці: 1 шт |
на замовлення 2197 шт: термін постачання 14-21 дні (днів) |
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 72 шт: термін постачання 14-21 дні (днів) |
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C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Max. forward voltage: 1.8V Manufacturer series: C3D |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Max. forward voltage: 1.8V Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 250 шт: термін постачання 14-21 дні (днів) |
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| C3D03060A | Wolfspeed(CREE) |
C3D03060A THT Schottky diodes |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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| C3D03060E | Wolfspeed(CREE) |
C3D03060E SMD Schottky diodes |
на замовлення 148 шт: термін постачання 14-21 дні (днів) |
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| C3D03060F | Wolfspeed(CREE) |
C3D03060F THT Schottky diodes |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 75W Manufacturer series: C3D |
на замовлення 671 шт: термін постачання 21-30 дні (днів) |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 75W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 671 шт: термін постачання 14-21 дні (днів) |
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Manufacturer series: C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Load current: 4A Power dissipation: 75W Max. off-state voltage: 0.6kV Case: TO252-2 |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Manufacturer series: C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Load current: 4A Power dissipation: 75W Max. off-state voltage: 0.6kV Case: TO252-2 кількість в упаковці: 1 шт |
на замовлення 304 шт: термін постачання 14-21 дні (днів) |
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 83 шт: термін постачання 14-21 дні (днів) |
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C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 79W Manufacturer series: C3D |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 79W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 74 шт: термін постачання 14-21 дні (днів) |
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C3D06060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 91W Manufacturer series: C3D |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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C3D06060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 91W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 14-21 дні (днів) |
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C3D06065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Manufacturer series: C3D Power dissipation: 100W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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C3D06065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Manufacturer series: C3D Power dissipation: 100W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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C3D08065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 48W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Type of diode: Schottky rectifying Power dissipation: 136W Mounting: THT Case: TO220-2 Semiconductor structure: single diode Manufacturer series: C3D Technology: SiC; Z-Rec® Load current: 10A Max. off-state voltage: 0.6kV |
на замовлення 394 шт: термін постачання 21-30 дні (днів) |
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C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Type of diode: Schottky rectifying Power dissipation: 136W Mounting: THT Case: TO220-2 Semiconductor structure: single diode Manufacturer series: C3D Technology: SiC; Z-Rec® Load current: 10A Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
на замовлення 394 шт: термін постачання 14-21 дні (днів) |
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C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 136W Manufacturer series: C3D |
на замовлення 656 шт: термін постачання 21-30 дні (днів) |
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C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 136W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 656 шт: термін постачання 14-21 дні (днів) |
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C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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| C3D10065I | Wolfspeed(CREE) |
C3D10065I THT Schottky diodes |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Mounting: THT Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Power dissipation: 100W Load current: 8A x2 Max. off-state voltage: 0.6kV Case: TO247-3 Manufacturer series: C3D |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Mounting: THT Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Power dissipation: 100W Load current: 8A x2 Max. off-state voltage: 0.6kV Case: TO247-3 Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 141 шт: термін постачання 14-21 дні (днів) |
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| C3D20065D | Wolfspeed(CREE) |
C3D20065D THT Schottky diodes |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 200A Power dissipation: 469W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 38mΩ Mounting: THT Gate charge: 162nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 34ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 200A Power dissipation: 469W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 38mΩ Mounting: THT Gate charge: 162nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 34ns кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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| C3M0040120K | Wolfspeed(CREE) |
C3M0040120K THT N channel transistors |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 36A Drain-source voltage: 900V Kind of channel: enhancement Type of transistor: N-MOSFET |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Drain current: 36A Drain-source voltage: 900V Kind of channel: enhancement Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 16ns On-state resistance: 78mΩ Drain current: 35A Drain-source voltage: 900V Power dissipation: 113W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 16ns On-state resistance: 78mΩ Drain current: 35A Drain-source voltage: 900V Power dissipation: 113W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC кількість в упаковці: 1 шт |
на замовлення 52 шт: термін постачання 14-21 дні (днів) |
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| C3M0075120D | Wolfspeed(CREE) |
C3M0075120D THT N channel transistors |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Reverse recovery time: 18ns On-state resistance: 75mΩ Drain current: 30A Drain-source voltage: 1.2kV Power dissipation: 113.6W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 14nC |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Reverse recovery time: 18ns On-state resistance: 75mΩ Drain current: 30A Drain-source voltage: 1.2kV Power dissipation: 113.6W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 14nC кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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| C3M0120090D | Wolfspeed(CREE) |
C3M0120090D THT N channel transistors |
на замовлення 64 шт: термін постачання 14-21 дні (днів) |
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Power dissipation: 83W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
|
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Power dissipation: 83W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC кількість в упаковці: 1 шт |
на замовлення 136 шт: термін постачання 14-21 дні (днів) |
|
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C3M0120100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 16ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 1kV Power dissipation: 83W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 21.5nC |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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C3M0120100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Case: D2PAK-7 Mounting: SMD Reverse recovery time: 16ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 1kV Power dissipation: 83W Technology: C3M™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 21.5nC кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Mounting: THT Technology: C3M™; SiC Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 38nC On-state resistance: 256mΩ Power dissipation: 97W Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV |
на замовлення 431 шт: термін постачання 21-30 дні (днів) |
|
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C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Mounting: THT Technology: C3M™; SiC Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 38nC On-state resistance: 256mΩ Power dissipation: 97W Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 431 шт: термін постачання 14-21 дні (днів) |
|
| C2M0040120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4172.83 грн |
| 3+ | 3418.82 грн |
| 10+ | 2970.25 грн |
| 30+ | 2909.57 грн |
| C2M0040120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Type of transistor: N-MOSFET
Technology: SiC; Z-FET™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhancement
Reverse recovery time: 54ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5007.40 грн |
| 3+ | 4260.38 грн |
| 10+ | 3564.30 грн |
| 30+ | 3491.48 грн |
| C2M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1021.79 грн |
| 3+ | 837.28 грн |
| 10+ | 779.88 грн |
| C2M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Mounting: THT
Technology: SiC; Z-FET™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -10...25V
Reverse recovery time: 23ns
Gate charge: 34nC
On-state resistance: 196mΩ
Power dissipation: 125W
Drain current: 17.7A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1226.15 грн |
| 3+ | 1043.38 грн |
| 10+ | 935.85 грн |
| C3D02060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
на замовлення 2197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.65 грн |
| 5+ | 94.31 грн |
| 25+ | 56.09 грн |
| 50+ | 50.11 грн |
| 75+ | 46.99 грн |
| 150+ | 42.23 грн |
| 300+ | 38.30 грн |
| 525+ | 35.51 грн |
| C3D02060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C3D
Power dissipation: 39.5W
кількість в упаковці: 1 шт
на замовлення 2197 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.38 грн |
| 3+ | 117.52 грн |
| 25+ | 67.31 грн |
| 50+ | 60.13 грн |
| 75+ | 56.39 грн |
| 150+ | 50.68 грн |
| 300+ | 45.96 грн |
| C3D02060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.81 грн |
| 10+ | 62.65 грн |
| 50+ | 43.63 грн |
| C3D02060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 72 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.77 грн |
| 10+ | 78.07 грн |
| 50+ | 52.35 грн |
| 100+ | 48.02 грн |
| 500+ | 43.79 грн |
| C3D02065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Max. forward voltage: 1.8V
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Max. forward voltage: 1.8V
Manufacturer series: C3D
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.30 грн |
| 25+ | 51.50 грн |
| 75+ | 40.10 грн |
| 150+ | 36.00 грн |
| C3D02065E |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Max. forward voltage: 1.8V
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Max. forward voltage: 1.8V
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 250 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.96 грн |
| 25+ | 64.18 грн |
| 75+ | 48.12 грн |
| 150+ | 43.20 грн |
| C3D03060A |
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Виробник: Wolfspeed(CREE)
C3D03060A THT Schottky diodes
C3D03060A THT Schottky diodes
на замовлення 88 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 105.98 грн |
| 17+ | 70.85 грн |
| 46+ | 66.92 грн |
| C3D03060E |
![]() |
Виробник: Wolfspeed(CREE)
C3D03060E SMD Schottky diodes
C3D03060E SMD Schottky diodes
на замовлення 148 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.85 грн |
| 17+ | 71.84 грн |
| 45+ | 67.90 грн |
| 525+ | 67.45 грн |
| C3D03060F |
![]() |
Виробник: Wolfspeed(CREE)
C3D03060F THT Schottky diodes
C3D03060F THT Schottky diodes
на замовлення 37 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.91 грн |
| 17+ | 69.87 грн |
| 47+ | 65.93 грн |
| C3D04060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
на замовлення 671 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.34 грн |
| 10+ | 78.73 грн |
| 50+ | 70.52 грн |
| 100+ | 69.70 грн |
| C3D04060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 671 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.01 грн |
| 10+ | 98.10 грн |
| 50+ | 84.63 грн |
| 100+ | 83.65 грн |
| C3D04060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Case: TO252-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Case: TO252-2
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.16 грн |
| 50+ | 92.67 грн |
| 75+ | 91.03 грн |
| C3D04060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Case: TO252-2
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Power dissipation: 75W
Max. off-state voltage: 0.6kV
Case: TO252-2
кількість в упаковці: 1 шт
на замовлення 304 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.59 грн |
| 50+ | 115.48 грн |
| 75+ | 109.23 грн |
| 525+ | 94.47 грн |
| 1050+ | 88.57 грн |
| 2025+ | 84.63 грн |
| C3D04065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.75 грн |
| 10+ | 78.73 грн |
| C3D04065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.35 грн |
| 10+ | 94.47 грн |
| 50+ | 92.50 грн |
| C3D04065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.78 грн |
| 25+ | 109.07 грн |
| 75+ | 80.37 грн |
| C3D04065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 83 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.34 грн |
| 25+ | 135.92 грн |
| 75+ | 96.44 грн |
| 150+ | 86.60 грн |
| C3D06060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.78 грн |
| 50+ | 119.73 грн |
| C3D06060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 74 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.34 грн |
| 50+ | 149.20 грн |
| 100+ | 137.77 грн |
| 500+ | 123.99 грн |
| 1000+ | 119.07 грн |
| C3D06060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 91W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 91W
Manufacturer series: C3D
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.27 грн |
| 10+ | 111.53 грн |
| 50+ | 110.71 грн |
| C3D06060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 91W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 91W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 91W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.26 грн |
| 3+ | 146.13 грн |
| 10+ | 133.83 грн |
| 50+ | 132.85 грн |
| C3D06065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Manufacturer series: C3D
Power dissipation: 100W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Manufacturer series: C3D
Power dissipation: 100W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 203.12 грн |
| C3D06065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Manufacturer series: C3D
Power dissipation: 100W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Manufacturer series: C3D
Power dissipation: 100W
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.75 грн |
| 10+ | 153.29 грн |
| 50+ | 133.83 грн |
| C3D08065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.32 грн |
| 10+ | 171.39 грн |
| C3D08065A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.18 грн |
| 10+ | 213.58 грн |
| 50+ | 191.89 грн |
| 100+ | 185.01 грн |
| C3D08065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D08065I |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
товару немає в наявності
В кошику
од. на суму грн.
| C3D10060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Power dissipation: 136W
Mounting: THT
Case: TO220-2
Semiconductor structure: single diode
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Load current: 10A
Max. off-state voltage: 0.6kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Power dissipation: 136W
Mounting: THT
Case: TO220-2
Semiconductor structure: single diode
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Load current: 10A
Max. off-state voltage: 0.6kV
на замовлення 394 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 369.15 грн |
| 50+ | 182.05 грн |
| 100+ | 168.93 грн |
| C3D10060A |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Power dissipation: 136W
Mounting: THT
Case: TO220-2
Semiconductor structure: single diode
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Load current: 10A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Type of diode: Schottky rectifying
Power dissipation: 136W
Mounting: THT
Case: TO220-2
Semiconductor structure: single diode
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Load current: 10A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 394 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 442.98 грн |
| 50+ | 226.87 грн |
| 100+ | 202.72 грн |
| C3D10060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
на замовлення 656 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 294.09 грн |
| 50+ | 173.03 грн |
| C3D10060G |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 656 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 352.90 грн |
| 50+ | 215.62 грн |
| C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 371.80 грн |
| C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 446.16 грн |
| 10+ | 370.96 грн |
| 20+ | 311.95 грн |
| 50+ | 239.13 грн |
| 100+ | 222.40 грн |
| C3D10065I |
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Виробник: Wolfspeed(CREE)
C3D10065I THT Schottky diodes
C3D10065I THT Schottky diodes
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 419.67 грн |
| 5+ | 266.68 грн |
| 13+ | 251.92 грн |
| C3D16060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 532.53 грн |
| 30+ | 316.54 грн |
| 120+ | 283.74 грн |
| C3D16060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 639.04 грн |
| 30+ | 394.46 грн |
| 120+ | 340.49 грн |
| 510+ | 335.57 грн |
| C3D20065D |
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Виробник: Wolfspeed(CREE)
C3D20065D THT Schottky diodes
C3D20065D THT Schottky diodes
на замовлення 88 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 806.48 грн |
| 3+ | 481.21 грн |
| 7+ | 454.64 грн |
| C3M0021120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2584.07 грн |
| 3+ | 2258.44 грн |
| 5+ | 2174.79 грн |
| 10+ | 2048.51 грн |
| 15+ | 1969.78 грн |
| 30+ | 1830.37 грн |
| C3M0021120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 34ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3100.88 грн |
| 3+ | 2814.36 грн |
| 5+ | 2609.75 грн |
| 10+ | 2458.21 грн |
| 15+ | 2363.74 грн |
| 30+ | 2196.44 грн |
| 120+ | 1956.33 грн |
| C3M0040120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1187.82 грн |
| 10+ | 989.81 грн |
| C3M0040120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1425.39 грн |
| 10+ | 1233.46 грн |
| 30+ | 1105.11 грн |
| 120+ | 1051.97 грн |
| C3M0040120K |
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Виробник: Wolfspeed(CREE)
C3M0040120K THT N channel transistors
C3M0040120K THT N channel transistors
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1952.09 грн |
| 2+ | 1001.78 грн |
| 4+ | 947.66 грн |
| C3M0065090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1307.05 грн |
| 5+ | 1091.50 грн |
| 10+ | 1022.61 грн |
| 30+ | 979.15 грн |
| C3M0065090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 54 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1568.46 грн |
| 5+ | 1360.17 грн |
| 10+ | 1227.14 грн |
| 30+ | 1174.98 грн |
| C3M0065090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Power dissipation: 113W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Power dissipation: 113W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 994.42 грн |
| C3M0065090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Power dissipation: 113W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 78mΩ
Drain current: 35A
Drain-source voltage: 900V
Power dissipation: 113W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
кількість в упаковці: 1 шт
на замовлення 52 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1193.30 грн |
| C3M0075120D |
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Виробник: Wolfspeed(CREE)
C3M0075120D THT N channel transistors
C3M0075120D THT N channel transistors
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1888.51 грн |
| 2+ | 999.81 грн |
| 4+ | 944.71 грн |
| C3M0075120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Power dissipation: 113.6W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Power dissipation: 113.6W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1158.68 грн |
| 5+ | 952.91 грн |
| 10+ | 884.02 грн |
| C3M0075120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Power dissipation: 113.6W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Drain-source voltage: 1.2kV
Power dissipation: 113.6W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1390.41 грн |
| 5+ | 1187.47 грн |
| 10+ | 1060.83 грн |
| 50+ | 986.04 грн |
| C3M0120090D |
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Виробник: Wolfspeed(CREE)
C3M0120090D THT N channel transistors
C3M0120090D THT N channel transistors
на замовлення 64 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 892.32 грн |
| 2+ | 785.29 грн |
| 5+ | 742.97 грн |
| C3M0120090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 815.14 грн |
| 3+ | 664.25 грн |
| 10+ | 625.70 грн |
| C3M0120090J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
кількість в упаковці: 1 шт
на замовлення 136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 978.17 грн |
| 3+ | 827.75 грн |
| 10+ | 750.85 грн |
| C3M0120100J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 1kV
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 21.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 1kV
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 21.5nC
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 808.07 грн |
| 10+ | 676.55 грн |
| C3M0120100J |
![]() |
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 1kV
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 21.5nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Case: D2PAK-7
Mounting: SMD
Reverse recovery time: 16ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 1kV
Power dissipation: 83W
Technology: C3M™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 21.5nC
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 969.69 грн |
| 10+ | 843.08 грн |
| 30+ | 783.32 грн |
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
на замовлення 431 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 570.51 грн |
| 10+ | 474.81 грн |
| 30+ | 408.39 грн |
| C3M0160120D |
![]() |
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 431 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 684.61 грн |
| 10+ | 591.69 грн |
| 30+ | 490.07 грн |
| 510+ | 432.01 грн |
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