Продукція > WOLFSPEED(CREE) > Всі товари виробника WOLFSPEED(CREE) (26) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
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C3D02060E | Wolfspeed(CREE) |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D |
на замовлення 2167 шт: термін постачання 14-30 дні (днів) |
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| C3D02060E-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 2A Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Max. load current: 8A Max. forward impulse current: 65A Application: automotive industry Leakage current: 50µA Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
на замовлення 526 шт: термін постачання 14-30 дні (днів) |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Manufacturer series: C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: THT Type of diode: Schottky rectifying Case: TO220-2 Load current: 4A Max. off-state voltage: 0.6kV Power dissipation: 75W |
на замовлення 604 шт: термін постачання 14-30 дні (днів) |
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Manufacturer series: C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Type of diode: Schottky rectifying Case: TO252-2 Load current: 4A Max. off-state voltage: 0.6kV Power dissipation: 75W |
на замовлення 243 шт: термін постачання 14-30 дні (днів) |
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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C3D08065I | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 48W Manufacturer series: C3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Mounting: THT Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Power dissipation: 100W Load current: 8A x2 Max. off-state voltage: 0.6kV Case: TO247-3 Manufacturer series: C3D |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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C3D20060D | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Mounting: THT Semiconductor structure: common cathode; double Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Load current: 10A x2 Power dissipation: 250W Max. off-state voltage: 0.6kV Manufacturer series: C3D Case: TO247-3 |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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C3D20065D | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Mounting: THT Semiconductor structure: common cathode; double Technology: SiC; Z-Rec® Type of diode: Schottky rectifying Load current: 10A x2 Power dissipation: 250W Max. off-state voltage: 650V Manufacturer series: C3D Case: TO247-3 |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 30ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 125W Drain current: 36A Drain-source voltage: 900V |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 113W Drain current: 35A Drain-source voltage: 900V |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 113W Drain current: 35A Drain-source voltage: 900V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 17.3nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 24ns |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 20ns |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 52W |
на замовлення 621 шт: термін постачання 14-30 дні (днів) |
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C4D20120A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.8V Power dissipation: 242W Manufacturer series: C4D |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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C4D20120D | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 176W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| C4D20120H | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 3V Max. forward impulse current: 104A Power dissipation: 106.5W Manufacturer series: C4D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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C6D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 26W Manufacturer series: C6D |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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C6D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 63A Power dissipation: 40.1W Manufacturer series: C6D |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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CAS120M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A Mechanical mounting: screw Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Polarisation: unipolar Operating temperature: -40...125°C Gate-source voltage: -5...20V On-state resistance: 13mΩ Drain current: 138A Pulsed drain current: 480A Power dissipation: 925W Case: 62MM Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAS300M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 285A Case: 62MM Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar On-state resistance: 5mΩ Pulsed drain current: 1.5kA Power dissipation: 1.66kW Technology: SiC Gate-source voltage: -5...20V Operating temperature: -40...125°C Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. |
| C3D02060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
на замовлення 2167 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.64 грн |
| 5+ | 91.69 грн |
| 20+ | 63.09 грн |
| 50+ | 56.02 грн |
| 75+ | 53.33 грн |
| 150+ | 49.21 грн |
| 525+ | 42.90 грн |
| 1050+ | 39.96 грн |
| C3D02060E-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 2A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Max. load current: 8A
Max. forward impulse current: 65A
Application: automotive industry
Leakage current: 50µA
Max. forward voltage: 1.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 2A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Max. load current: 8A
Max. forward impulse current: 65A
Application: automotive industry
Leakage current: 50µA
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060F |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
на замовлення 526 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.95 грн |
| 10+ | 63.34 грн |
| 50+ | 44.08 грн |
| 100+ | 40.46 грн |
| 500+ | 36.84 грн |
| C3D04060A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: THT
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
на замовлення 604 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.25 грн |
| 10+ | 82.44 грн |
| 50+ | 70.66 грн |
| C3D04060E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Case: TO252-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Case: TO252-2
Load current: 4A
Max. off-state voltage: 0.6kV
Power dissipation: 75W
на замовлення 243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 145.85 грн |
| 10+ | 104.31 грн |
| 20+ | 91.69 грн |
| 50+ | 76.55 грн |
| 75+ | 71.50 грн |
| C3D04065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 11 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.95 грн |
| 5+ | 102.62 грн |
| 10+ | 96.74 грн |
| C3D04065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.34 грн |
| C3D08065A |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.38 грн |
| C3D08065E |
|
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
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| C3D08065I |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 48W
Manufacturer series: C3D
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| C3D16060D |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Power dissipation: 100W
Load current: 8A x2
Max. off-state voltage: 0.6kV
Case: TO247-3
Manufacturer series: C3D
на замовлення 140 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 553.49 грн |
| 30+ | 329.74 грн |
| 120+ | 295.25 грн |
| C3D20060D |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Manufacturer series: C3D
Case: TO247-3
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 365.07 грн |
| 6+ | 318.81 грн |
| 10+ | 311.24 грн |
| C3D20065D |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 650V
Manufacturer series: C3D
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC; Z-Rec®
Type of diode: Schottky rectifying
Load current: 10A x2
Power dissipation: 250W
Max. off-state voltage: 650V
Manufacturer series: C3D
Case: TO247-3
на замовлення 88 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 592.45 грн |
| 5+ | 430.68 грн |
| 10+ | 370.96 грн |
| 30+ | 370.12 грн |
| C3M0065090D |
|
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
на замовлення 148 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1260.08 грн |
| 5+ | 1014.46 грн |
| 10+ | 900.06 грн |
| 30+ | 762.11 грн |
| C3M0065090J |
|
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
на замовлення 50 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1066.22 грн |
| 10+ | 944.64 грн |
| C3M0065090J-TR |
|
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
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| C3M0120090J |
|
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
на замовлення 136 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 952.99 грн |
| 3+ | 772.20 грн |
| 10+ | 690.61 грн |
| 50+ | 652.75 грн |
| C3M0280090J |
|
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 561.65 грн |
| C4D02120E |
|
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
на замовлення 621 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.31 грн |
| 10+ | 139.64 грн |
| 25+ | 116.08 грн |
| 40+ | 98.42 грн |
| 75+ | 84.12 грн |
| C4D20120A |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1234.72 грн |
| C4D20120D |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
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| C4D20120H |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
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| C6D04065A |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 26W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 26W
Manufacturer series: C6D
на замовлення 79 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.53 грн |
| 10+ | 94.21 грн |
| 50+ | 73.18 грн |
| C6D08065A |
|
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
на замовлення 37 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.29 грн |
| 10+ | 162.35 грн |
| CAS120M12BM2 |
|
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
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| CAS300M12BM2 |
|
Виробник: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 285A
Case: 62MM
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5mΩ
Pulsed drain current: 1.5kA
Power dissipation: 1.66kW
Technology: SiC
Gate-source voltage: -5...20V
Operating temperature: -40...125°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 285A
Case: 62MM
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5mΩ
Pulsed drain current: 1.5kA
Power dissipation: 1.66kW
Technology: SiC
Gate-source voltage: -5...20V
Operating temperature: -40...125°C
Mechanical mounting: screw
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од. на суму грн.