Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3602) > Сторінка 15 з 61
Фото | Назва | Виробник | Інформація |
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AS4C32M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C32M16SB-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C32M16SB-6TIN | Alliance Memory | DRAM 512M 3.3V 133MHz 32M x 16 SDRAM |
на замовлення 309 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C32M16SB-6TINTR | Alliance Memory | DRAM 512M 3.3V 133MHz 32M x 16 SDRAM |
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AS4C32M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C32M16SB-7BIN | Alliance Memory | DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die |
на замовлення 1091 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-7BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 512Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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AS4C32M16SB-7BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 348 шт |
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AS4C32M16SB-7BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C32M16SB-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 512Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C32M16SB-7TCN | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
на замовлення 1298 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 191 шт: термін постачання 7-14 дні (днів) |
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AS4C32M16SB-7TCN | Alliance Memory | Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54 |
на замовлення 1 шт: термін постачання 2-3 дні (днів) |
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AS4C32M16SB-7TCNTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
на замовлення 631 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 512Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C32M16SB-7TIN | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
на замовлення 1063 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C32M16SB-7TINTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
на замовлення 1420 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SB-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C32M16SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C32M16SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C32M16SC-7TIN | Alliance Memory | DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp |
на замовлення 416 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C32M16SC-7TINTR | Alliance Memory | DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp |
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AS4C32M16SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C32M16SM-7TCN | Alliance Memory | DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR |
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AS4C32M16SM-7TIN | Alliance Memory | DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD1-5BCN | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD1-5BCNTR | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
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AS4C32M32MD1-5BIN | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
на замовлення 317 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD1-5BINTR | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
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AS4C32M32MD1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx32bit Clock frequency: 200MHz Access time: 6ns Case: FBGA90 Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C32M32MD1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Access time: 15ns Case: FPBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M32MD1A-5BIN | Alliance Memory | DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx32bit Clock frequency: 200MHz Access time: 6ns Case: FBGA90 Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C32M32MD1A-5BINTR | Alliance Memory | DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp |
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AS4C32M32MD1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Access time: 15ns Case: FPBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M32MD2-25BCN | Alliance Memory | DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2 |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD2-25BCNTR | Alliance Memory | DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2 |
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AS4C32M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C32M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V |
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AS4C32M32MD2A-25BIN | Alliance Memory | DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C32M32MD2A-25BINTR | Alliance Memory | DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel |
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AS4C32M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V кількість в упаковці: 1000 шт |
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AS4C32M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory |
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AS4C32M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory |
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AS4C32M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TCN | Alliance Memory | DRAM |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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AS4C32M8D1-5TCNTR | Alliance Memory | DRAM |
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AS4C32M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TIN | Alliance Memory | DRAM |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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AS4C32M8D1-5TINTR | Alliance Memory | DRAM |
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AS4C32M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M16SB-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TIN |
Виробник: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
на замовлення 309 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1222.17 грн |
10+ | 1115.3 грн |
25+ | 944.79 грн |
108+ | 921.73 грн |
216+ | 791.28 грн |
540+ | 786.67 грн |
1080+ | 782.72 грн |
AS4C32M16SB-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BIN |
Виробник: Alliance Memory
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
на замовлення 1091 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1136.85 грн |
10+ | 1037.26 грн |
25+ | 889.45 грн |
100+ | 769.54 грн |
250+ | 751.75 грн |
2784+ | 704.31 грн |
5220+ | 694.43 грн |
AS4C32M16SB-7BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1271.98 грн |
10+ | 1097.56 грн |
25+ | 1027.34 грн |
50+ | 917.59 грн |
100+ | 823.56 грн |
AS4C32M16SB-7BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C32M16SB-7BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1050.26 грн |
10+ | 906.13 грн |
25+ | 847.74 грн |
50+ | 757.68 грн |
100+ | 679.76 грн |
AS4C32M16SB-7TCN |
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1298 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 937.76 грн |
10+ | 856.18 грн |
25+ | 725.4 грн |
108+ | 635.13 грн |
216+ | 608.12 грн |
540+ | 565.29 грн |
AS4C32M16SB-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 191 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1327.71 грн |
2+ | 909.97 грн |
4+ | 828.51 грн |
108+ | 801.33 грн |
AS4C32M16SB-7TCN |
Виробник: Alliance Memory
Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
на замовлення 1 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 933.35 грн |
10+ | 871.12 грн |
100+ | 808.91 грн |
AS4C32M16SB-7TCNTR |
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 631 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 914.7 грн |
10+ | 834.96 грн |
25+ | 715.51 грн |
50+ | 706.95 грн |
100+ | 619.98 грн |
250+ | 592.97 грн |
500+ | 589.01 грн |
AS4C32M16SB-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1242.42 грн |
10+ | 1072.43 грн |
25+ | 1003.69 грн |
50+ | 896.31 грн |
100+ | 804.56 грн |
AS4C32M16SB-7TIN |
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1202.18 грн |
10+ | 1100.91 грн |
25+ | 939.52 грн |
50+ | 933.59 грн |
108+ | 921.73 грн |
216+ | 788.64 грн |
540+ | 783.37 грн |
AS4C32M16SB-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C32M16SB-7TINTR |
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1116.09 грн |
10+ | 1018.32 грн |
25+ | 872.98 грн |
100+ | 755.7 грн |
250+ | 723.42 грн |
500+ | 718.81 грн |
1000+ | 673.35 грн |
AS4C32M16SB-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TIN |
Виробник: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
на замовлення 416 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1123.01 грн |
10+ | 1025.14 грн |
25+ | 868.37 грн |
108+ | 760.97 грн |
216+ | 728.03 грн |
540+ | 722.76 грн |
1080+ | 695.75 грн |
AS4C32M16SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR |
Виробник: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C32M16SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SM-7TIN |
Виробник: Alliance Memory
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
на замовлення 13 шт:
термін постачання 21-30 дні (днів)AS4C32M32MD1-5BCN |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 51 шт:
термін постачання 21-30 дні (днів)AS4C32M32MD1-5BCNTR |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1-5BIN |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 317 шт:
термін постачання 21-30 дні (днів)AS4C32M32MD1-5BINTR |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD1A-5BIN |
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 674.11 грн |
10+ | 612.2 грн |
25+ | 521.15 грн |
50+ | 519.83 грн |
AS4C32M32MD1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2-25BCN |
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
на замовлення 242 шт:
термін постачання 21-30 дні (днів)AS4C32M32MD2-25BCNTR |
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
товар відсутній
AS4C32M32MD2A-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній
AS4C32M32MD2A-25BIN |
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 554.97 грн |
10+ | 503.1 грн |
25+ | 426.94 грн |
100+ | 372.25 грн |
256+ | 361.05 грн |
512+ | 343.92 грн |
1024+ | 332.72 грн |
AS4C32M32MD2A-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M8D1-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)AS4C32M8D1-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)AS4C32M8D1-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній