Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3603) > Сторінка 17 з 61
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS4C4M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6BIN | Alliance Memory | Синхронна енергозалежна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; tвстан = 5,4 нс; TFBGA-54 |
на замовлення 226 шт: термін постачання 2-3 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6BINTR | Alliance Memory | DRAM |
на замовлення 11670 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6TAN | Alliance Memory | DRAM |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6TANTR | Alliance Memory | DRAM |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6TCN | Alliance Memory | DRAM |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C4M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 126 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TCNTR | Alliance Memory | DRAM |
на замовлення 781 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TIN | Alliance Memory | DRAM |
на замовлення 3100 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TINTR | Alliance Memory | DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel |
на замовлення 810 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 3757 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-7B2CN | Alliance Memory | DRAM 64M 3.3V 143MHz 4M x 16 SDRAM |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C4M16SA-7B2CN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7B2CNTR | Alliance Memory | DRAM 64M 3.3V 143MHz 4M x 16 SDRAM |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7B2CNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7BCN | Alliance Memory | DRAM |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C4M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7BCN | Alliance Memory | Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54 |
на замовлення 1 шт: термін постачання 2-3 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-7BCNTR | Alliance Memory | DRAM |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M16SA-7TCN | Alliance Memory | DRAM |
на замовлення 2665 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C4M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 5384 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-7TCNTR | Alliance Memory | DRAM |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 1431 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
AS4C4M16SB-6TIN | Alliance Memory | DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray |
на замовлення 3392 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BCN | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 189 шт |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BCNTR | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1500 шт |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BIN | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 189 шт |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BINTR | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
товар відсутній |
||||||||||||||||
AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1500 шт |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BIN | Alliance Memory | DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BINTR | Alliance Memory | DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT |
товар відсутній |
||||||||||||||||
AS4C4M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M32S-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
товар відсутній |
||||||||||||||||
AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BCN | Alliance Memory | DRAM |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BIN | Alliance Memory | DRAM 128M, 3.3V, 4M x 32 SDRAM |
на замовлення 1206 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C4M32S-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BIN | Alliance Memory | Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90 |
на замовлення 1 шт: термін постачання 2-3 дні (днів) |
|
|||||||||||||||
AS4C4M32S-6BINTR | Alliance Memory | DRAM 128M, 3.3V, 4M x 32 SDRAM |
товар відсутній |
||||||||||||||||
AS4C4M32S-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
AS4C4M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 246.52 грн |
10+ | 212.91 грн |
25+ | 199.46 грн |
50+ | 178.28 грн |
100+ | 159.44 грн |
AS4C4M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BIN |
Виробник: Alliance Memory
Синхронна енергозалежна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; tвстан = 5,4 нс; TFBGA-54
Синхронна енергозалежна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; tвстан = 5,4 нс; TFBGA-54
на замовлення 226 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 141.15 грн |
10+ | 131.74 грн |
100+ | 122.34 грн |
AS4C4M16SA-6BINTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 11670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 285.13 грн |
10+ | 255.02 грн |
25+ | 216.43 грн |
50+ | 215.1 грн |
100+ | 193.12 грн |
500+ | 185.13 грн |
1000+ | 176.47 грн |
AS4C4M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 284.35 грн |
10+ | 255.02 грн |
25+ | 215.1 грн |
108+ | 210.44 грн |
216+ | 192.46 грн |
540+ | 187.13 грн |
1080+ | 180.47 грн |
AS4C4M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 133 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 126 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 242.94 грн |
5+ | 208.33 грн |
6+ | 165.65 грн |
15+ | 156.49 грн |
108+ | 151.5 грн |
AS4C4M16SA-6TCNTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.63 грн |
10+ | 208.3 грн |
25+ | 177.8 грн |
100+ | 158.49 грн |
250+ | 153.17 грн |
500+ | 152.5 грн |
1000+ | 141.18 грн |
AS4C4M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 96 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 216.64 грн |
10+ | 186.76 грн |
25+ | 174.81 грн |
50+ | 156.08 грн |
AS4C4M16SA-6TIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 3100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 251.72 грн |
10+ | 222.86 грн |
25+ | 191.12 грн |
108+ | 161.82 грн |
216+ | 148.5 грн |
540+ | 142.51 грн |
1080+ | 141.18 грн |
AS4C4M16SA-6TINTR |
Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel
на замовлення 810 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.42 грн |
10+ | 204.48 грн |
100+ | 155.16 грн |
250+ | 154.5 грн |
500+ | 148.5 грн |
1000+ | 140.51 грн |
2000+ | 139.85 грн |
AS4C4M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 3757 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 277 грн |
5+ | 254.14 грн |
6+ | 168.15 грн |
15+ | 158.99 грн |
AS4C4M16SA-7B2CN |
Виробник: Alliance Memory
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
на замовлення 117 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7B2CN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7B2CNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 175 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
Виробник: Alliance Memory
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
на замовлення 1 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624 грн |
AS4C4M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7TCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 2665 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 103 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 194.23 грн |
10+ | 168.08 грн |
25+ | 156.88 грн |
50+ | 140.12 грн |
100+ | 125.5 грн |
AS4C4M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 5384 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 251.01 грн |
5+ | 225.62 грн |
7+ | 149 грн |
17+ | 141.51 грн |
216+ | 139.85 грн |
AS4C4M16SA-7TCNTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.63 грн |
10+ | 208.3 грн |
25+ | 177.8 грн |
100+ | 158.49 грн |
250+ | 153.17 грн |
500+ | 152.5 грн |
1000+ | 139.85 грн |
AS4C4M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 1431 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 257.28 грн |
5+ | 229.08 грн |
6+ | 151.5 грн |
17+ | 143.18 грн |
AS4C4M16SB-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 3392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 229.19 грн |
10+ | 202.94 грн |
108+ | 157.83 грн |
5076+ | 137.85 грн |
10044+ | 135.85 грн |
25056+ | 133.85 грн |
AS4C4M32D1A-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
товар відсутній
AS4C4M32D1A-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C4M32D1A-5BIN |
Виробник: Alliance Memory
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400.89 грн |
10+ | 358.41 грн |
25+ | 303 грн |
50+ | 273.03 грн |
100+ | 269.7 грн |
189+ | 243.07 грн |
567+ | 223.09 грн |
AS4C4M32D1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
товар відсутній
AS4C4M32D1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C4M32MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32MSA-6BINTR |
Виробник: Alliance Memory
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C4M32MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32S-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-6BIN |
Виробник: Alliance Memory
DRAM 128M, 3.3V, 4M x 32 SDRAM
DRAM 128M, 3.3V, 4M x 32 SDRAM
на замовлення 1206 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 431.97 грн |
10+ | 389.04 грн |
25+ | 328.97 грн |
100+ | 320.98 грн |
190+ | 272.37 грн |
570+ | 259.71 грн |
AS4C4M32S-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-6BIN |
Виробник: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
на замовлення 1 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624 грн |
10+ | 480.03 грн |
100+ | 445.74 грн |
AS4C4M32S-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній