Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3598) > Сторінка 34 з 60
Фото | Назва | Виробник | Інформація |
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AS6C8016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V кількість в упаковці: 1000 шт |
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AS6C8016A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM Mounting: SMD Operating voltage: 3.3V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016A-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel Mounting: SMD Operating voltage: 3.3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016A-55BIN | Alliance Memory | SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55BINTR | Alliance Memory | SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM |
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AS6C8016A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM Mounting: SMD Operating voltage: 3.3V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 1000 шт |
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AS6C8016A-55ZIN | Alliance Memory | SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55ZINTR | Alliance Memory | SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel Mounting: SMD Operating voltage: 3.3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1000 шт |
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AS6C8016B-45BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-45BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-45BIN | Alliance Memory | SRAM |
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AS6C8016B-45BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 300 шт |
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AS6C8016B-45BINTR | Alliance Memory | SRAM |
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AS6C8016B-45BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-45ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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AS6C8016B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1 шт |
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AS6C8016B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-55BIN | Alliance Memory | SRAM |
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AS6C8016B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 300 шт |
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AS6C8016B-55BINTR | Alliance Memory | SRAM |
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AS6C8016B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-55ZIN | Alliance Memory | SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp |
на замовлення 111 шт: термін постачання 21-30 дні (днів) |
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AS6C8016B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1 шт |
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AS6C8016B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6CE1016A-45ZIN | ALLIANCE MEMORY | AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ. |
на замовлення 135 шт: термін постачання 7-14 дні (днів) |
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AS6CE1016A-45ZINTR | ALLIANCE MEMORY | AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ. |
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AS6CE4016B-45BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V |
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AS6CE4016B-45BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V |
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AS6CE4016B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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AS6CE4016B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V |
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AS6CE4016B-45BIN | Alliance Memory | DRAM |
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AS6CE4016B-45BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V кількість в упаковці: 480 шт |
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AS6CE4016B-45BINTR | Alliance Memory | DRAM |
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AS6CE4016B-45BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V кількість в упаковці: 2000 шт |
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AS6CE4016B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт |
на замовлення 135 шт: термін постачання 7-14 дні (днів) |
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AS6CE4016B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт |
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AS7C1024B-12JCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 4.5...5.5V |
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AS7C1024B-12JCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 5V |
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AS7C1024B-12JIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 4.5...5.5V |
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AS7C1024B-12JINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 5V |
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AS7C1024B-12TCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast Operating voltage: 4.5...5.5V |
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AS7C1024B-12TCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast Operating voltage: 5V |
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AS7C1024B-12TJCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 4.5...5.5V |
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AS7C1024B-12TJCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 5V |
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AS7C1024B-12TJIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 4.5...5.5V |
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AS7C1024B-12TJINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 5V |
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AS7C1024B-15JCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 4.5...5.5V |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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AS7C1024B-15JCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 5V |
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AS7C1024B-15TCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast Operating voltage: 4.5...5.5V |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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AS7C1024B-15TCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast Operating voltage: 5V |
товар відсутній |
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AS7C1024B-15TJCN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 4.5...5.5V |
товар відсутній |
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AS7C1024B-15TJCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 5V |
товар відсутній |
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AS7C1024B-15TJINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 15ns Case: SOJ32 Mounting: SMD Integrated circuit features: fast IC width: 300mils Operating voltage: 4.5...5.5V |
товар відсутній |
AS6C8016-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55BIN |
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 198 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55BINTR |
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
товар відсутній
AS6C8016A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55ZIN |
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 135 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55ZINTR |
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016B-45BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-45BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-45ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
на замовлення 152 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 489 грн |
10+ | 428.55 грн |
100+ | 334.79 грн |
270+ | 332.13 грн |
540+ | 318.84 грн |
1080+ | 312.2 грн |
2565+ | 306.22 грн |
AS6C8016B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
на замовлення 111 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 489 грн |
10+ | 428.55 грн |
100+ | 334.12 грн |
270+ | 330.14 грн |
540+ | 298.25 грн |
1080+ | 296.92 грн |
2565+ | 292.27 грн |
AS6C8016B-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6CE1016A-45ZIN |
Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
на замовлення 135 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 331.75 грн |
5+ | 211.73 грн |
13+ | 200.11 грн |
AS6CE1016A-45ZINTR |
Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6CE4016B-45BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
на замовлення 135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 636.37 грн |
2+ | 428.31 грн |
6+ | 404.78 грн |
AS6CE4016B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6CE4016B-45BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6CE4016B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
на замовлення 135 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 763.64 грн |
2+ | 533.74 грн |
6+ | 485.74 грн |
AS6CE4016B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS7C1024B-12JCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12JIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15JCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 691.51 грн |
AS7C1024B-15JCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.65 грн |
5+ | 170.22 грн |
AS7C1024B-15TCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJCN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-15TJCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній