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AS6C8016-55ZINTR AS6C8016-55ZINTR ALLIANCE MEMORY AS6C8016.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55BINTR ALLIANCE MEMORY AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55ZINTR AS6C8016A-55ZINTR ALLIANCE MEMORY AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55BIN AS6C8016A-55BIN Alliance Memory AS6C8016A-TFBGA-1288459.pdf SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55BINTR AS6C8016A-55BINTR Alliance Memory AS6C8016A-TFBGA-1288459.pdf SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
товар відсутній
AS6C8016A-55BINTR ALLIANCE MEMORY AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55ZIN AS6C8016A-55ZIN Alliance Memory AS6C8016A-TSOPII-1288385.pdf SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55ZINTR AS6C8016A-55ZINTR Alliance Memory AS6C8016A-TSOPII-1288385.pdf SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55ZINTR AS6C8016A-55ZINTR ALLIANCE MEMORY AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016B-45BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BIN Alliance Memory AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf SRAM
товар відсутній
AS6C8016B-45BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-45BINTR Alliance Memory AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf SRAM
товар відсутній
AS6C8016B-45BINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-45ZIN AS6C8016B-45ZIN Alliance Memory AllianceMemory_8M_AS6C8016B_xxZIN_November2020_Rev-1990008.pdf SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
1+489 грн
10+ 428.55 грн
100+ 334.79 грн
270+ 332.13 грн
540+ 318.84 грн
1080+ 312.2 грн
2565+ 306.22 грн
AS6C8016B-45ZIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-45ZINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55BIN Alliance Memory AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf SRAM
товар відсутній
AS6C8016B-55BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-55BINTR Alliance Memory AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf SRAM
товар відсутній
AS6C8016B-55BINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55ZIN AS6C8016B-55ZIN Alliance Memory AllianceMemory_8M_AS6C8016B_xxZIN_November2020_Rev-1990008.pdf SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
1+489 грн
10+ 428.55 грн
100+ 334.12 грн
270+ 330.14 грн
540+ 298.25 грн
1080+ 296.92 грн
2565+ 292.27 грн
AS6C8016B-55ZIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-55ZINTR ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6CE1016A-45ZIN ALLIANCE MEMORY AllianceMemory_1Mb_AS6CE1016A-45ZIN_LPSRAM_WithECC_Datasheet_June2022_v1.pdf AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
на замовлення 135 шт:
термін постачання 7-14 дні (днів)
1+331.75 грн
5+ 211.73 грн
13+ 200.11 грн
AS6CE1016A-45ZINTR ALLIANCE MEMORY AllianceMemory_1Mb_AS6CE1016A-45ZIN_LPSRAM_WithECC_Datasheet_June2022_v1.pdf AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6CE4016B-45BIN ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BINTR ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45ZIN AS6CE4016B-45ZIN ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
1+636.37 грн
2+ 428.31 грн
6+ 404.78 грн
AS6CE4016B-45ZINTR ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BIN Alliance Memory AllianceMemory_4Mb_AS6CE4016B-45ZIN_45BIN_LPSRAM_WithECC_Datasheet_June2.pdf DRAM
товар відсутній
AS6CE4016B-45BIN ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6CE4016B-45BINTR Alliance Memory DRAM
товар відсутній
AS6CE4016B-45BINTR ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6CE4016B-45ZIN AS6CE4016B-45ZIN ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
на замовлення 135 шт:
термін постачання 7-14 дні (днів)
1+763.64 грн
2+ 533.74 грн
6+ 485.74 грн
AS6CE4016B-45ZINTR ALLIANCE MEMORY AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS7C1024B-12JCN AS7C1024B-12JCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JCNTR AS7C1024B-12JCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12JIN AS7C1024B-12JIN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JINTR AS7C1024B-12JINTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TCN AS7C1024B-12TCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TCNTR AS7C1024B-12TCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJCN AS7C1024B-12TJCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJCNTR AS7C1024B-12TJCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJIN AS7C1024B-12TJIN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJINTR AS7C1024B-12TJINTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15JCN AS7C1024B-15JCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+691.51 грн
AS7C1024B-15JCNTR AS7C1024B-15JCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TCN AS7C1024B-15TCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+208.65 грн
5+ 170.22 грн
Мінімальне замовлення: 2
AS7C1024B-15TCNTR AS7C1024B-15TCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJCN AS7C1024B-15TJCN ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-15TJCNTR AS7C1024B-15TJCNTR ALLIANCE MEMORY AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS6C8016-55ZINTR AS6C8016.pdf Alliance_Selection_Guide _Print2024.pdf
AS6C8016-55ZINTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55BINTR AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55ZINTR AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf
AS6C8016A-55ZINTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55BIN AS6C8016A-TFBGA-1288459.pdf
AS6C8016A-55BIN
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55BINTR AS6C8016A-TFBGA-1288459.pdf
AS6C8016A-55BINTR
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
товар відсутній
AS6C8016A-55BINTR AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel; 8MbSRAM
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55ZIN AS6C8016A-TSOPII-1288385.pdf
AS6C8016A-55ZIN
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55ZINTR AS6C8016A-TSOPII-1288385.pdf
AS6C8016A-55ZINTR
Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
AS6C8016A-55ZINTR AS6C8016A.pdf 4C128M16D2-25BCNTR-DTE.pdf
AS6C8016A-55ZINTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016B-45BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BIN AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf
Виробник: Alliance Memory
SRAM
товар відсутній
AS6C8016B-45BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-45BINTR AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf
Виробник: Alliance Memory
SRAM
товар відсутній
AS6C8016B-45BINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-45ZIN AllianceMemory_8M_AS6C8016B_xxZIN_November2020_Rev-1990008.pdf
AS6C8016B-45ZIN
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+489 грн
10+ 428.55 грн
100+ 334.79 грн
270+ 332.13 грн
540+ 318.84 грн
1080+ 312.2 грн
2565+ 306.22 грн
AS6C8016B-45ZIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-45ZINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55BIN AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf
Виробник: Alliance Memory
SRAM
товар відсутній
AS6C8016B-55BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-55BINTR AllianceMemoryLPSRAM_8M_AS6C8016B_xxBIN_November20-1928303.pdf
Виробник: Alliance Memory
SRAM
товар відсутній
AS6C8016B-55BINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55ZIN AllianceMemory_8M_AS6C8016B_xxZIN_November2020_Rev-1990008.pdf
AS6C8016B-55ZIN
Виробник: Alliance Memory
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+489 грн
10+ 428.55 грн
100+ 334.12 грн
270+ 330.14 грн
540+ 298.25 грн
1080+ 296.92 грн
2565+ 292.27 грн
AS6C8016B-55ZIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-55ZINTR 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6CE1016A-45ZIN AllianceMemory_1Mb_AS6CE1016A-45ZIN_LPSRAM_WithECC_Datasheet_June2022_v1.pdf
Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
на замовлення 135 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+331.75 грн
5+ 211.73 грн
13+ 200.11 грн
AS6CE1016A-45ZINTR AllianceMemory_1Mb_AS6CE1016A-45ZIN_LPSRAM_WithECC_Datasheet_June2022_v1.pdf
Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6CE4016B-45BIN AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BINTR AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45ZIN AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
AS6CE4016B-45ZIN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+636.37 грн
2+ 428.31 грн
6+ 404.78 грн
AS6CE4016B-45ZINTR AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BIN AllianceMemory_4Mb_AS6CE4016B-45ZIN_45BIN_LPSRAM_WithECC_Datasheet_June2.pdf
Виробник: Alliance Memory
DRAM
товар відсутній
AS6CE4016B-45BIN AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6CE4016B-45BINTR
Виробник: Alliance Memory
DRAM
товар відсутній
AS6CE4016B-45BINTR AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6CE4016B-45ZIN AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
AS6CE4016B-45ZIN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
на замовлення 135 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+763.64 грн
2+ 533.74 грн
6+ 485.74 грн
AS6CE4016B-45ZINTR AllianceMemory_4Mb_AS6CE4016B-45ZIN.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS7C1024B-12JCN description AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12JCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12JCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12JIN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12JIN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12JINTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12JINTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TCN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJCN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TJCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TJCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-12TJIN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TJIN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-12TJINTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-12TJINTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15JCN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15JCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 4.5...5.5V
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+691.51 грн
AS7C1024B-15JCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15JCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TCN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15TCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 4.5...5.5V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+208.65 грн
5+ 170.22 грн
Мінімальне замовлення: 2
AS7C1024B-15TCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15TCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJCN AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15TJCN
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
AS7C1024B-15TJCNTR AS7C1024B.pdf Alliance_Selection_Guide _Print2024.pdf
AS7C1024B-15TJCNTR
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 15ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 5V
товар відсутній
AS7C1024B-15TJINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 15ns; SOJ32; 300mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 15ns
Case: SOJ32
Mounting: SMD
Integrated circuit features: fast
IC width: 300mils
Operating voltage: 4.5...5.5V
товар відсутній
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