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DMG4413LSS-13 DMG4413LSS-13 DIODES INCORPORATED ds31754.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Mounting: SMD
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Case: SO8
Drain-source voltage: -30V
Drain current: -17A
кількість в упаковці: 2500 шт
товар відсутній
DMG4466SSS-13 DMG4466SSS-13 DIODES INCORPORATED ds32137.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
DMG4466SSSL-13 DMG4466SSSL-13 DIODES INCORPORATED ds32244.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
DMG4468LFG-7 DIODES INCORPORATED ds31857.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.83A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.99W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45.9A
Mounting: SMD
Case: U-DFN3030-8
кількість в упаковці: 3000 шт
товар відсутній
DMG4468LK3-13 DIODES INCORPORATED DMG4468LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
кількість в упаковці: 1 шт
товар відсутній
DMG4496SSS-13 DMG4496SSS-13 DIODES INCORPORATED ds32048.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
DMG4511SK4-13 DMG4511SK4-13 DIODES INCORPORATED DMG4511SK4-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
кількість в упаковці: 1 шт
на замовлення 2463 шт:
термін постачання 7-14 дні (днів)
4+69.95 грн
9+ 32.06 грн
25+ 27.75 грн
37+ 26.83 грн
100+ 25.9 грн
102+ 25.39 грн
500+ 24.38 грн
Мінімальне замовлення: 4
DMG4800LFG-7 DIODES INCORPORATED ds31785.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Mounting: SMD
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.47nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 40A
Case: U-DFN3030-8
Drain-source voltage: 30V
Drain current: 4.82A
кількість в упаковці: 1 шт
товар відсутній
DMG4800LK3-13 DMG4800LK3-13 DIODES INCORPORATED DMG4800LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Mounting: SMD
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.71W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Drain-source voltage: 30V
Drain current: 6.5A
кількість в упаковці: 1 шт
товар відсутній
DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: 30V
Drain current: 8.4A
кількість в упаковці: 1 шт
на замовлення 3339 шт:
термін постачання 7-14 дні (днів)
10+27.25 грн
25+ 18.48 грн
62+ 16.06 грн
100+ 15.86 грн
170+ 15.18 грн
500+ 14.85 грн
2500+ 14.59 грн
Мінімальне замовлення: 10
DMG4800LSDQ-13 DMG4800LSDQ-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
Application: automotive industry
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: 30V
Drain current: 8.4A
кількість в упаковці: 1 шт
товар відсутній
DMG4822SSD-13 DMG4822SSD-13 DIODES INCORPORATED DMG4822SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
кількість в упаковці: 1 шт
товар відсутній
DMG4822SSDQ-13 DMG4822SSDQ-13 DIODES INCORPORATED DMG4822SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Application: automotive industry
On-state resistance: 32.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
кількість в упаковці: 1 шт
товар відсутній
DMG5802LFX-7 DIODES INCORPORATED DMG5802LFX.pdf DMG5802LFX-7 SMD N channel transistors
товар відсутній
DMG6301UDW-13 DMG6301UDW-13 DIODES INCORPORATED DMG6301UDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.37W
On-state resistance: 5Ω
Polarisation: unipolar
Gate charge: 0.36nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain current: 0.19A
Drain-source voltage: 25V
кількість в упаковці: 10000 шт
товар відсутній
DMG6301UDW-7 DMG6301UDW-7 DIODES INCORPORATED DMG6301UDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
On-state resistance: 5Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: 0.22A
Drain-source voltage: 25V
кількість в упаковці: 5 шт
товар відсутній
DMG6302UDW-7 DMG6302UDW-7 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -120mA
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMG6402LDM-7 DMG6402LDM-7 DIODES INCORPORATED DMG6402LDM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 1 шт
товар відсутній
DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED DMG6402LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 2895 шт:
термін постачання 7-14 дні (днів)
20+15.26 грн
35+ 7.71 грн
100+ 6.58 грн
170+ 5.74 грн
470+ 5.4 грн
Мінімальне замовлення: 20
DMG6601LVT-7 DMG6601LVT-7 DIODES INCORPORATED DMG6601LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: TSOT26
Mounting: SMD
Power dissipation: 0.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30/-30V
Drain current: 3/-2A
On-state resistance: 0.065/0.142Ω
Type of transistor: N/P-MOSFET
кількість в упаковці: 5 шт
на замовлення 3080 шт:
термін постачання 7-14 дні (днів)
20+16.72 грн
50+ 8.76 грн
155+ 6.41 грн
425+ 6.07 грн
Мінімальне замовлення: 20
DMG6602SVT-7 DMG6602SVT-7 DIODES INCORPORATED DMG6602SVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOT26
On-state resistance: 0.06/0.095Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 4165 шт:
термін постачання 7-14 дні (днів)
20+17.08 грн
50+ 9.55 грн
155+ 6.32 грн
425+ 5.97 грн
Мінімальне замовлення: 20
DMG6602SVTQ-7 DMG6602SVTQ-7 DIODES INCORPORATED DMG6602SVTQ_Rev1-2_Dec2014.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Kind of package: reel; tape
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Polarisation: unipolar
Drain current: 2.7/-2.4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOT26
On-state resistance: 0.06/0.095Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 2905 шт:
термін постачання 7-14 дні (днів)
20+14.26 грн
30+ 9.64 грн
100+ 8.18 грн
140+ 6.93 грн
385+ 6.55 грн
Мінімальне замовлення: 20
DMG6602SVTX-7 DMG6602SVTX-7 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.8W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 100/140mΩ
Mounting: SMD
Gate charge: 13/9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMG6898LSD-13 DMG6898LSD-13 DIODES INCORPORATED DMG6898LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Kind of package: reel; tape
Drain current: 7.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SO8
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 1.28W
Gate charge: 26nC
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
DMG6898LSDQ-13 DMG6898LSDQ-13 DIODES INCORPORATED DMG6898LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 7.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Pulsed drain current: 30A
Power dissipation: 1.28W
Gate charge: 26nC
кількість в упаковці: 2500 шт
товар відсутній
DMG6968U-7 DMG6968U-7 DIODES INCORPORATED DMG6968U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 10 шт
на замовлення 2350 шт:
термін постачання 7-14 дні (днів)
30+9.9 грн
100+ 8.59 грн
170+ 6.04 грн
450+ 5.71 грн
Мінімальне замовлення: 30
DMG6968UDM-7 DMG6968UDM-7 DIODES INCORPORATED DMG6968UDM.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2928 шт:
термін постачання 7-14 дні (днів)
11+25.89 грн
25+ 17 грн
78+ 12.55 грн
214+ 11.87 грн
Мінімальне замовлення: 11
DMG6968UQ-7 DMG6968UQ-7 DIODES INCORPORATED DMG6968U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Application: automotive industry
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
товар відсутній
DMG7401SFG-13 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
кількість в упаковці: 3000 шт
товар відсутній
DMG7401SFG-7 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
кількість в упаковці: 1 шт
товар відсутній
DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
товар відсутній
DMG7430LFG-7 DMG7430LFG-7 DIODES INCORPORATED DMG7430LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 9.2A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 1990 шт:
термін постачання 7-14 дні (днів)
15+18.9 грн
25+ 13.67 грн
95+ 10.46 грн
260+ 9.87 грн
2000+ 9.79 грн
Мінімальне замовлення: 15
DMG7430LFGQ-13 DIODES INCORPORATED DMG7430LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
DMG7430LFGQ-7 DIODES INCORPORATED DMG7430LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMG8601UFG-7 DIODES INCORPORATED ds31788.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 920mW
Polarisation: unipolar
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 27A
Mounting: SMD
Case: U-DFN3030-8
кількість в упаковці: 1 шт
товар відсутній
DMG8822UTS-13 DIODES INCORPORATED ds31798.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9926UDM-7 DMG9926UDM-7 DIODES INCORPORATED ds31770.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9926USD-13 DMG9926USD-13 DIODES INCORPORATED ds31757.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9933USD-13 DMG9933USD-13 DIODES INCORPORATED DMG9933USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
DMGD7N45SSD-13 DIODES INCORPORATED DMGD7N45SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DMHC10H170SFJ-13 DIODES INCORPORATED DMHC10H170SFJ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2.3/-1.9A
Pulsed drain current: 13...-11A
Power dissipation: 2.1W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 200/300mΩ
Mounting: SMD
Gate charge: 9.7/17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMHC3025LSD-13 DIODES INCORPORATED DMHC3025LSD.pdf DMHC3025LSD-13 SMD N channel transistors
товар відсутній
DMHC3025LSDQ-13 DMHC3025LSDQ-13 DIODES INCORPORATED DMHC3025LSDQ_ds.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMHC4035LSD-13 DIODES INCORPORATED DMHC4035LSD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/-3.8A; Idm: 25÷-15A
Kind of package: reel; tape
Drain current: 4.5/-3.8A
On-state resistance: 58/100mΩ
Gate charge: 12.5/11.1nC
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1.5W
Pulsed drain current: 25...-15A
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Drain-source voltage: 40/-40V
товар відсутній
DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMHC6070LSD-13 DIODES INCORPORATED DMHC6070LSD.pdf DMHC6070LSD-13 Multi channel transistors
товар відсутній
DMHT3006LFJ-13 DIODES INCORPORATED DMHT3006LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Case: V-DFN5045-12
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 80A
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Gate charge: 17nC
кількість в упаковці: 3000 шт
товар відсутній
DMHT6016LFJ-13 DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMJ70H1D3SK3-13 DIODES INCORPORATED DMJ70H1D3SK3-13 SMD N channel transistors
товар відсутній
DMJ70H600SH3 DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMJT9435-13 DIODES INCORPORATED DMJT9435.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 1 шт
товар відсутній
DMMT2907A-7 DMMT2907A-7 DIODES INCORPORATED DMMT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
кількість в упаковці: 5 шт
товар відсутній
DMMT3904W-13-F DMMT3904W-13-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 10000 шт
товар відсутній
DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 5 шт
на замовлення 3370 шт:
термін постачання 7-14 дні (днів)
20+14.54 грн
30+ 8.85 грн
100+ 7.51 грн
155+ 6.5 грн
415+ 6.15 грн
Мінімальне замовлення: 20
DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED DMMT3904WQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED DMMT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
кількість в упаковці: 5 шт
товар відсутній
DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 3000 шт
товар відсутній
DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMMT5401-7-F DMMT5401-7-F DIODES INCORPORATED DMMT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
кількість в упаковці: 1 шт
на замовлення 324 шт:
термін постачання 7-14 дні (днів)
12+22.98 грн
27+ 9.9 грн
100+ 8.44 грн
123+ 8.04 грн
337+ 7.6 грн
500+ 7.51 грн
3000+ 7.34 грн
Мінімальне замовлення: 12
DMMT5551-7-F DMMT5551-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Mounting: SMD
Case: SOT26
Frequency: 100...300MHz
кількість в упаковці: 1 шт
на замовлення 841 шт:
термін постачання 7-14 дні (днів)
10+29.07 грн
13+ 21.55 грн
25+ 16.2 грн
50+ 12.99 грн
100+ 10.46 грн
132+ 7.5 грн
363+ 7.09 грн
Мінімальне замовлення: 10
DMG4413LSS-13 ds31754.pdf
DMG4413LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Mounting: SMD
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Case: SO8
Drain-source voltage: -30V
Drain current: -17A
кількість в упаковці: 2500 шт
товар відсутній
DMG4466SSS-13 ds32137.pdf
DMG4466SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
DMG4466SSSL-13 ds32244.pdf
DMG4466SSSL-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
DMG4468LFG-7 ds31857.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.83A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.99W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45.9A
Mounting: SMD
Case: U-DFN3030-8
кількість в упаковці: 3000 шт
товар відсутній
DMG4468LK3-13 DMG4468LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
кількість в упаковці: 1 шт
товар відсутній
DMG4496SSS-13 ds32048.pdf
DMG4496SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
DMG4511SK4-13 DMG4511SK4-13.pdf
DMG4511SK4-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
кількість в упаковці: 1 шт
на замовлення 2463 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+69.95 грн
9+ 32.06 грн
25+ 27.75 грн
37+ 26.83 грн
100+ 25.9 грн
102+ 25.39 грн
500+ 24.38 грн
Мінімальне замовлення: 4
DMG4800LFG-7 ds31785.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Mounting: SMD
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.47nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 40A
Case: U-DFN3030-8
Drain-source voltage: 30V
Drain current: 4.82A
кількість в упаковці: 1 шт
товар відсутній
DMG4800LK3-13 DMG4800LK3.pdf
DMG4800LK3-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Mounting: SMD
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.71W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Drain-source voltage: 30V
Drain current: 6.5A
кількість в упаковці: 1 шт
товар відсутній
DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: 30V
Drain current: 8.4A
кількість в упаковці: 1 шт
на замовлення 3339 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
10+27.25 грн
25+ 18.48 грн
62+ 16.06 грн
100+ 15.86 грн
170+ 15.18 грн
500+ 14.85 грн
2500+ 14.59 грн
Мінімальне замовлення: 10
DMG4800LSDQ-13 DMG4800LSD.pdf
DMG4800LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Mounting: SMD
Application: automotive industry
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: 30V
Drain current: 8.4A
кількість в упаковці: 1 шт
товар відсутній
DMG4822SSD-13 DMG4822SSD.pdf
DMG4822SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
кількість в упаковці: 1 шт
товар відсутній
DMG4822SSDQ-13 DMG4822SSDQ.pdf
DMG4822SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Application: automotive industry
On-state resistance: 32.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
кількість в упаковці: 1 шт
товар відсутній
DMG5802LFX-7 DMG5802LFX.pdf
Виробник: DIODES INCORPORATED
DMG5802LFX-7 SMD N channel transistors
товар відсутній
DMG6301UDW-13 DMG6301UDW.pdf
DMG6301UDW-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.37W
On-state resistance: 5Ω
Polarisation: unipolar
Gate charge: 0.36nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain current: 0.19A
Drain-source voltage: 25V
кількість в упаковці: 10000 шт
товар відсутній
DMG6301UDW-7 DMG6301UDW.pdf
DMG6301UDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
On-state resistance: 5Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: 0.22A
Drain-source voltage: 25V
кількість в упаковці: 5 шт
товар відсутній
DMG6302UDW-7
DMG6302UDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -120mA
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMG6402LDM-7 DMG6402LDM.pdf
DMG6402LDM-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
кількість в упаковці: 1 шт
товар відсутній
DMG6402LVT-7 DMG6402LVT.pdf
DMG6402LVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 2895 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.26 грн
35+ 7.71 грн
100+ 6.58 грн
170+ 5.74 грн
470+ 5.4 грн
Мінімальне замовлення: 20
DMG6601LVT-7 DMG6601LVT-7.pdf
DMG6601LVT-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: TSOT26
Mounting: SMD
Power dissipation: 0.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30/-30V
Drain current: 3/-2A
On-state resistance: 0.065/0.142Ω
Type of transistor: N/P-MOSFET
кількість в упаковці: 5 шт
на замовлення 3080 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+16.72 грн
50+ 8.76 грн
155+ 6.41 грн
425+ 6.07 грн
Мінімальне замовлення: 20
DMG6602SVT-7 DMG6602SVT-7.pdf
DMG6602SVT-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOT26
On-state resistance: 0.06/0.095Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 4165 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+17.08 грн
50+ 9.55 грн
155+ 6.32 грн
425+ 5.97 грн
Мінімальне замовлення: 20
DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Kind of package: reel; tape
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Polarisation: unipolar
Drain current: 2.7/-2.4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOT26
On-state resistance: 0.06/0.095Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 2905 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+14.26 грн
30+ 9.64 грн
100+ 8.18 грн
140+ 6.93 грн
385+ 6.55 грн
Мінімальне замовлення: 20
DMG6602SVTX-7
DMG6602SVTX-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.8W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 100/140mΩ
Mounting: SMD
Gate charge: 13/9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMG6898LSD-13 DMG6898LSD.pdf
DMG6898LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Kind of package: reel; tape
Drain current: 7.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SO8
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 1.28W
Gate charge: 26nC
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
DMG6898LSDQ-13 DMG6898LSD.pdf
DMG6898LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 7.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Pulsed drain current: 30A
Power dissipation: 1.28W
Gate charge: 26nC
кількість в упаковці: 2500 шт
товар відсутній
DMG6968U-7 DMG6968U.pdf
DMG6968U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 10 шт
на замовлення 2350 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
30+9.9 грн
100+ 8.59 грн
170+ 6.04 грн
450+ 5.71 грн
Мінімальне замовлення: 30
DMG6968UDM-7 DMG6968UDM.pdf
DMG6968UDM-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2928 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
11+25.89 грн
25+ 17 грн
78+ 12.55 грн
214+ 11.87 грн
Мінімальне замовлення: 11
DMG6968UQ-7 DMG6968U.pdf
DMG6968UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Application: automotive industry
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
товар відсутній
DMG7401SFG-13 DMG7401SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
кількість в упаковці: 3000 шт
товар відсутній
DMG7401SFG-7 DMG7401SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
кількість в упаковці: 1 шт
товар відсутній
DMG7408SFG-7 DMG7408SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
товар відсутній
DMG7430LFG-7 DMG7430LFG.pdf
DMG7430LFG-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 9.2A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 1990 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
15+18.9 грн
25+ 13.67 грн
95+ 10.46 грн
260+ 9.87 грн
2000+ 9.79 грн
Мінімальне замовлення: 15
DMG7430LFGQ-13 DMG7430LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
DMG7430LFGQ-7 DMG7430LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMG8601UFG-7 ds31788.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 920mW
Polarisation: unipolar
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 27A
Mounting: SMD
Case: U-DFN3030-8
кількість в упаковці: 1 шт
товар відсутній
DMG8822UTS-13 ds31798.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9926UDM-7 ds31770.pdf
DMG9926UDM-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9926USD-13 ds31757.pdf
DMG9926USD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
DMGD7N45SSD-13 DMGD7N45SSD.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DMHC10H170SFJ-13 DMHC10H170SFJ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2.3/-1.9A
Pulsed drain current: 13...-11A
Power dissipation: 2.1W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 200/300mΩ
Mounting: SMD
Gate charge: 9.7/17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMHC3025LSD-13 DMHC3025LSD.pdf
Виробник: DIODES INCORPORATED
DMHC3025LSD-13 SMD N channel transistors
товар відсутній
DMHC3025LSDQ-13 DMHC3025LSDQ_ds.pdf
DMHC3025LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMHC4035LSD-13 DMHC4035LSD.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/-3.8A; Idm: 25÷-15A
Kind of package: reel; tape
Drain current: 4.5/-3.8A
On-state resistance: 58/100mΩ
Gate charge: 12.5/11.1nC
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1.5W
Pulsed drain current: 25...-15A
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Drain-source voltage: 40/-40V
товар відсутній
DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
DMHC4035LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMHC6070LSD-13 DMHC6070LSD.pdf
Виробник: DIODES INCORPORATED
DMHC6070LSD-13 Multi channel transistors
товар відсутній
DMHT3006LFJ-13 DMHT3006LFJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Case: V-DFN5045-12
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 80A
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Gate charge: 17nC
кількість в упаковці: 3000 шт
товар відсутній
DMHT6016LFJ-13 DMHT6016LFJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMJ70H1D3SK3-13
Виробник: DIODES INCORPORATED
DMJ70H1D3SK3-13 SMD N channel transistors
товар відсутній
DMJ70H600SH3
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMJT9435-13 DMJT9435.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 1 шт
товар відсутній
DMMT2907A-7 DMMT2907A.pdf
DMMT2907A-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
кількість в упаковці: 5 шт
товар відсутній
DMMT3904W-13-F DMMT3904W.pdf
DMMT3904W-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 10000 шт
товар відсутній
DMMT3904W-7-F DMMT3904W.pdf
DMMT3904W-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 5 шт
на замовлення 3370 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+14.54 грн
30+ 8.85 грн
100+ 7.51 грн
155+ 6.5 грн
415+ 6.15 грн
Мінімальне замовлення: 20
DMMT3904WQ-7-F DMMT3904WQ.pdf
DMMT3904WQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMMT3906-7-F DMMT3906.pdf
DMMT3906-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
кількість в упаковці: 5 шт
товар відсутній
DMMT3906W-7-f DMMT3906W.pdf
DMMT3906W-7-f
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 3000 шт
товар відсутній
DMMT3906WQ-7-F DMMT3906W.pdf
DMMT3906WQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMMT5401-7-F DMMT5401.pdf
DMMT5401-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
кількість в упаковці: 1 шт
на замовлення 324 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
12+22.98 грн
27+ 9.9 грн
100+ 8.44 грн
123+ 8.04 грн
337+ 7.6 грн
500+ 7.51 грн
3000+ 7.34 грн
Мінімальне замовлення: 12
DMMT5551-7-F DMMT5551.pdf
DMMT5551-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Mounting: SMD
Case: SOT26
Frequency: 100...300MHz
кількість в упаковці: 1 шт
на замовлення 841 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
10+29.07 грн
13+ 21.55 грн
25+ 16.2 грн
50+ 12.99 грн
100+ 10.46 грн
132+ 7.5 грн
363+ 7.09 грн
Мінімальне замовлення: 10
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