Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74404) > Сторінка 1107 з 1241
| Фото | Назва | Виробник | Інформація |
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| DMN2008LFU-13 | DIODES INCORPORATED |
 DMN2008LFU-13 SMD N channel transistors |
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| DMN2008LFU-7 | DIODES INCORPORATED |
DMN2008LFU-7 SMD N channel transistors |
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| DMN2009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.6A Drain-source voltage: 20V Pulsed drain current: 42A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 58.3nC |
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| DMN2009USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC |
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| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 10000 шт |
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| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 1 шт |
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| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN2050-4 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 9.8A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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| DMN2013UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Mounting: SMD Power dissipation: 1.31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 10A On-state resistance: 50mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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| DMN2014LHAB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.4A Pulsed drain current: 45A Power dissipation: 1.1W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2015UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 10A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 45.6nC Kind of channel: enhanced Pulsed drain current: 80A кількість в упаковці: 3000 шт |
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| DMN2015UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 9.3A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Pulsed drain current: 70A кількість в упаковці: 1 шт |
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| DMN2016LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.77W Case: U-DFN3030-8 Gate-source voltage: ±8V On-state resistance: 30mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| DMN2016LHAB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6 Case: U-DFN2030-6 Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 45A Power dissipation: 1W Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 6A Kind of package: reel; tape Drain-source voltage: 20V кількість в упаковці: 3000 шт |
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| DMN2016UTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.73A Pulsed drain current: 36A Power dissipation: 0.88W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2019UTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Pulsed drain current: 30A Power dissipation: 0.78W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN2020LSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 3095 шт: термін постачання 7-14 дні (днів) |
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| DMN2020UFCL-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 45A Power dissipation: 0.61W Case: X1-DFN1616-6 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2022UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 5.2A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 5 шт |
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| DMN2023UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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DMN2024U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| DMN2024UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 1.67W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| DMN2024UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 0.96W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| DMN2024UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 50A Power dissipation: 1.71W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN2024UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2024UVT-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2024UVTQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 4.8A On-state resistance: 31mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.4W Polarisation: unipolar Gate charge: 12.3nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
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| DMN2025UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 30A Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 5.2A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 12.3nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
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DMN2026UVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2026UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2027UPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 60A; 1.9W Gate charge: 11.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 2500 шт |
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DMN2027USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10.7A Pulsed drain current: 45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 19mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| DMN2028UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| DMN2028UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2028UFDH-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7A Pulsed drain current: 40A Power dissipation: 1.5W Case: V-DFN3030-8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2028UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 40A Power dissipation: 1.8W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN2028USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.3A Power dissipation: 12.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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DMN2028UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 40A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMN2029USD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A Power dissipation: 0.7W Case: SO8 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2036UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W Mounting: SMD Case: X2-WLB1616-4 Kind of package: reel; tape Pulsed drain current: 30A Drain-source voltage: 24V Drain current: 4A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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DMN2040LTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 30A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2245 шт: термін постачання 7-14 дні (днів) |
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| DMN2040U-13 | DIODES INCORPORATED |
DMN2040U-13 SMD N channel transistors |
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| DMN2040U-7 | DIODES INCORPORATED |
DMN2040U-7 SMD N channel transistors |
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DMN2041L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 41mΩ Mounting: SMD Gate charge: 15.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMN2041LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8 Kind of package: reel; tape Drain current: 4.92A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SO8 On-state resistance: 41mΩ Mounting: SMD Pulsed drain current: 30A Power dissipation: 1.16W Gate charge: 15.6nC Polarisation: unipolar кількість в упаковці: 1 шт |
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| DMN2041UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 20A Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
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| DMN2044UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Mounting: SMD Drain current: 3.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 16A Case: U-WLB1010-4 Drain-source voltage: 20V кількість в упаковці: 1 шт |
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DMN2046U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23 Kind of package: reel; tape Pulsed drain current: 18A Power dissipation: 1.26W Gate charge: 3.8nC Polarisation: unipolar Drain current: 2.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.11Ω Gate-source voltage: ±12V Mounting: SMD кількість в упаковці: 10000 шт |
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DMN2046U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Power dissipation: 0.76W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 1655 шт: термін постачання 7-14 дні (днів) |
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DMN2050L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.1Ω Power dissipation: 1.4W Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| DMN2050LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 25A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
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| DMN2050LFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: U-DFN2020-6 On-state resistance: 55mΩ Power dissipation: 0.73W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
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DMN2053U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 22A Power dissipation: 0.8W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMN2053U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 91mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 22A кількість в упаковці: 5 шт |
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DMN2053UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Pulsed drain current: 22A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMN2053UW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 91mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 22A кількість в упаковці: 5 шт |
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DMN2053UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Pulsed drain current: 20A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 5 шт |
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DMN2055U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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DMN2055U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
| DMN2009LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.6A
Drain-source voltage: 20V
Pulsed drain current: 42A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 58.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.6A
Drain-source voltage: 20V
Pulsed drain current: 42A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 58.3nC
товар відсутній
| DMN2009USS-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.7A
Drain-source voltage: 20V
Pulsed drain current: 100A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.7A
Drain-source voltage: 20V
Pulsed drain current: 100A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 34nC
товар відсутній
| DMN2011UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 84nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 84nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2011UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 10000 шт
товар відсутній
| DMN2011UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 11.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
товар відсутній
| DMN2011UFX-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN2050-4
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 9.8A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN2050-4
Pulsed drain current: 80A
Drain-source voltage: 20V
Drain current: 9.8A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2013UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Mounting: SMD
Power dissipation: 1.31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 10A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Mounting: SMD
Power dissipation: 1.31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 10A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| DMN2014LHAB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.4A
Pulsed drain current: 45A
Power dissipation: 1.1W
Case: U-DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.4A
Pulsed drain current: 45A
Power dissipation: 1.1W
Case: U-DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2015UFDE-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 10A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 45.6nC
Kind of channel: enhanced
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 10A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 45.6nC
Kind of channel: enhanced
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
товар відсутній
| DMN2015UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 9.3A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 42.3nC
Kind of channel: enhanced
Pulsed drain current: 70A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 9.3A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 42.3nC
Kind of channel: enhanced
Pulsed drain current: 70A
кількість в упаковці: 1 шт
товар відсутній
| DMN2016LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.77W
Case: U-DFN3030-8
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.77W
Case: U-DFN3030-8
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| DMN2016LHAB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6
Case: U-DFN2030-6
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 45A
Power dissipation: 1W
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 6A
Kind of package: reel; tape
Drain-source voltage: 20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6
Case: U-DFN2030-6
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 45A
Power dissipation: 1W
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 6A
Kind of package: reel; tape
Drain-source voltage: 20V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2016UTS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.73A
Pulsed drain current: 36A
Power dissipation: 0.88W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.73A
Pulsed drain current: 36A
Power dissipation: 0.88W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2019UTS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2020LSN-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3095 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.74 грн |
| 25+ | 10.75 грн |
| 100+ | 9.18 грн |
| 125+ | 7.84 грн |
| 340+ | 7.42 грн |
| DMN2020UFCL-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 45A
Power dissipation: 0.61W
Case: X1-DFN1616-6
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 45A
Power dissipation: 0.61W
Case: X1-DFN1616-6
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2022UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
товар відсутній
| DMN2023UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Kind of package: reel; tape
Pulsed drain current: 20A
Drain-source voltage: 24V
Drain current: 4.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Kind of package: reel; tape
Pulsed drain current: 20A
Drain-source voltage: 24V
Drain current: 4.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2024U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2024UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2024UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2024UFU-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2024UQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2024UVT-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2024UVTQ-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2025UFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
товар відсутній
| DMN2025UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 30A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 30A
Case: U-DFN2020-6
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
| DMN2026UVT-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 20A
Power dissipation: 1.75W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 20A
Power dissipation: 1.75W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2026UVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 20A
Power dissipation: 1.75W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 20A
Power dissipation: 1.75W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2027UPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 60A; 1.9W
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 60A; 1.9W
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 2500 шт
товар відсутній
| DMN2027USS-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| DMN2028UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2028UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2028UFDH-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2028UFU-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2028USS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| DMN2028UVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2029USD-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Power dissipation: 0.7W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Power dissipation: 0.7W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN2036UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Kind of package: reel; tape
Pulsed drain current: 30A
Drain-source voltage: 24V
Drain current: 4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Kind of package: reel; tape
Pulsed drain current: 30A
Drain-source voltage: 24V
Drain current: 4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2040LTS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2245 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 21.48 грн |
| 16+ | 17.07 грн |
| 30+ | 14.52 грн |
| 76+ | 12.78 грн |
| 208+ | 12.08 грн |
| DMN2041L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2041LSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Kind of package: reel; tape
Drain current: 4.92A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 1.16W
Gate charge: 15.6nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Kind of package: reel; tape
Drain current: 4.92A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 1.16W
Gate charge: 15.6nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| DMN2041UFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
| DMN2044UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Case: U-WLB1010-4
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Case: U-WLB1010-4
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
| DMN2046U-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| DMN2046U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 1655 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.65 грн |
| 50+ | 5.52 грн |
| 100+ | 4.7 грн |
| 240+ | 3.99 грн |
| 660+ | 3.77 грн |
| DMN2050L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| DMN2050LFDB-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
| DMN2050LFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
товар відсутній
| DMN2053U-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2053U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
| DMN2053UVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN2053UW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
| DMN2053UWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
| DMN2055U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN2055U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній