Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73966) > Сторінка 298 з 1233
| Фото | Назва | Виробник | Інформація |
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ZLPM8014JB20TC | Diodes Incorporated |
Description: IC LNB CTLR PWR SUPPLY 20UQFNPackaging: Cut Tape (CT) Package / Case: 20-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 8V ~ 16V Applications: Set-Top Boxes Current - Supply: 6mA Supplier Device Package: U-QFN4040-20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDS5100HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 5A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 18493 шт: термін постачання 21-31 дні (днів) |
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DMC1028UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMC1029UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC2041UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC3400SDW-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DMG3404L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4.2A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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DMG3406L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMN1029UFDB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN10H170SFDE-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.9A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVT-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMN2041UFDB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 4.7A 6UDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN2046U-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN32D4SDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.65A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DMP2060UFDB-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2200UDW-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 170000 шт: термін постачання 21-31 дні (днів) |
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DMP3068L-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.3A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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DMN3016LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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AP3785HMTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V Supplier Device Package: 8-SO Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 13 V Power (Watts): 15 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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B2100AF-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMAFPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 290000 шт: термін постачання 21-31 дні (днів) |
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B360AM-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DDZ15Q-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 310MW SOD123 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DDZ16Q-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 310MW SOD123 |
на замовлення 648000 шт: термін постачання 21-31 дні (днів) |
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DDZ17Q-7 | Diodes Incorporated |
Description: DIODE ZENER 17V 310MW SOD123 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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FMMT493QTA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
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FMMT593QTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 (Type DN) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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FZT493ATA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMV393M8-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V Supplier Device Package: 8-MSOP Propagation Delay (Max): 600ns Current - Quiescent (Max): 200µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 84mA Part Status: Active |
на замовлення 1027500 шт: термін постачання 21-31 дні (днів) |
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PD3S160Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 1A POWERDI 323Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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PDS360Q-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SBR3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT2U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 4A 2DFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP10A13FQTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 600MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1119000 шт: термін постачання 21-31 дні (днів) |
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AP3105CVKTR-G1 | Diodes Incorporated | Description: IC PWM CTLR CURR MODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP3785TMTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V Supplier Device Package: 8-SO Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 13 V Power (Watts): 15 W |
на замовлення 3489 шт: термін постачання 21-31 дні (днів) |
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AP7335A-33W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 300MA SOT25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 19468 шт: термін постачання 21-31 дні (днів) |
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B2100AF-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMAFPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 292939 шт: термін постачання 21-31 дні (днів) |
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B360AM-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 93460 шт: термін постачання 21-31 дні (днів) |
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DDZ15Q-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 310MW SOD123 |
на замовлення 47873 шт: термін постачання 21-31 дні (днів) |
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DDZ16Q-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 310MW SOD123 |
на замовлення 650811 шт: термін постачання 21-31 дні (днів) |
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DDZ17Q-7 | Diodes Incorporated |
Description: DIODE ZENER 17V 310MW SOD123 |
на замовлення 193366000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMN3016LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10.3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 9178 шт: термін постачання 21-31 дні (днів) |
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DMP2023UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V |
на замовлення 3110 шт: термін постачання 21-31 дні (днів) |
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FMMT493QTA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 176322 шт: термін постачання 21-31 дні (днів) |
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FMMT593QTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 (Type DN) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 91802 шт: термін постачання 21-31 дні (днів) |
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FZT493ATA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT223 |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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LMV393M8-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V Supplier Device Package: 8-MSOP Propagation Delay (Max): 600ns Current - Quiescent (Max): 200µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 84mA Part Status: Active |
на замовлення 1029473 шт: термін постачання 21-31 дні (днів) |
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PD3S160Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 1A POWERDI 323Packaging: Cut Tape (CT) Package / Case: PowerDI™ 323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 91405 шт: термін постачання 21-31 дні (днів) |
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PDS360Q-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 18359 шт: термін постачання 21-31 дні (днів) |
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SBR3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA |
на замовлення 4109 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT2U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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SBRT4U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 4A 2DFN |
на замовлення 4396 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP10A13FQTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 600MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1120865 шт: термін постачання 21-31 дні (днів) |
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DDZ17Q-7 | Diodes Incorporated |
Description: DIODE ZENER 17V 310MW SOD123 |
на замовлення 193366000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA |
на замовлення 4109 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMP2023UFDF-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V |
на замовлення 230000 шт: термін постачання 21-31 дні (днів) |
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DMT3008LFDF-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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PT7C4511WE | Diodes Incorporated |
Description: IC PLL CLOCK MULT 8-SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 200MHz Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7342D-3030FS6-7 | Diodes Incorporated |
Description: IC REG LINEAR 3V/3V X2DFN1212-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: X2-DFN1212-6 Voltage - Output (Min/Fixed): 3V, 3V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA Protection Features: Over Current |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| ZLPM8014JB20TC |
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Виробник: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V ~ 16V
Applications: Set-Top Boxes
Current - Supply: 6mA
Supplier Device Package: U-QFN4040-20
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V ~ 16V
Applications: Set-Top Boxes
Current - Supply: 6mA
Supplier Device Package: U-QFN4040-20
товару немає в наявності
В кошику
од. на суму грн.
| PDS5100HQ-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 18493 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.15 грн |
| 10+ | 77.17 грн |
| 100+ | 60.85 грн |
| 500+ | 45.28 грн |
| 1000+ | 40.12 грн |
| 2000+ | 38.28 грн |
| DMC1028UFDB-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 20.15 грн |
| 20000+ | 19.34 грн |
| DMC1029UFDB-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
В кошику
од. на суму грн.
| DMC2041UFDB-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET N/P-CH 20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMC3400SDW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.25 грн |
| 20000+ | 3.74 грн |
| 30000+ | 3.57 грн |
| DMG3404L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.47 грн |
| 20000+ | 5.72 грн |
| 30000+ | 5.46 грн |
| DMG3406L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.73 грн |
| 20000+ | 3.44 грн |
| 30000+ | 3.42 грн |
| DMN1029UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
В кошику
од. на суму грн.
| DMN10H170SFDE-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Description: MOSFET N-CH 100V 2.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 11.74 грн |
| 20000+ | 10.50 грн |
| DMN10H170SVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 11.53 грн |
| DMN2041UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
товару немає в наявності
В кошику
од. на суму грн.
| DMN2046U-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Description: MOSFET N-CH 20V 3.4A SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DMN32D4SDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.41 грн |
| 30000+ | 5.11 грн |
| 50000+ | 4.23 грн |
| DMP2060UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
В кошику
од. на суму грн.
| DMP2200UDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.05 грн |
| 20000+ | 3.57 грн |
| 30000+ | 3.41 грн |
| DMP3068L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.78 грн |
| 30000+ | 4.52 грн |
| DMN3016LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.74 грн |
| 5000+ | 11.88 грн |
| 7500+ | 11.85 грн |
| AP3785HMTR-G1 |
Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
товару немає в наявності
В кошику
од. на суму грн.
| B2100AF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 290000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.73 грн |
| 20000+ | 7.30 грн |
| B360AM-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 10.66 грн |
| 10000+ | 10.09 грн |
| DDZ15Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
Description: DIODE ZENER 15V 310MW SOD123
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.65 грн |
| 6000+ | 3.89 грн |
| 15000+ | 3.31 грн |
| 30000+ | 2.92 грн |
| DDZ16Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
Description: DIODE ZENER 16V 310MW SOD123
на замовлення 648000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.65 грн |
| 6000+ | 3.89 грн |
| 15000+ | 3.31 грн |
| 30000+ | 2.92 грн |
| 75000+ | 2.74 грн |
| 150000+ | 2.37 грн |
| DDZ17Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
Description: DIODE ZENER 17V 310MW SOD123
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FMMT493QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.72 грн |
| 6000+ | 9.43 грн |
| 9000+ | 8.97 грн |
| 15000+ | 7.94 грн |
| 21000+ | 7.65 грн |
| 30000+ | 7.38 грн |
| 75000+ | 6.98 грн |
| FMMT593QTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.78 грн |
| 6000+ | 11.27 грн |
| 9000+ | 10.75 грн |
| 15000+ | 9.53 грн |
| 21000+ | 9.20 грн |
| 30000+ | 8.88 грн |
| 75000+ | 8.65 грн |
| FZT493ATA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Description: TRANS NPN 100V 1A SOT223
товару немає в наявності
В кошику
од. на суму грн.
| LMV393M8-13 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
на замовлення 1027500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 10.02 грн |
| 5000+ | 9.35 грн |
| 7500+ | 9.20 грн |
| 12500+ | 8.48 грн |
| 17500+ | 8.39 грн |
| 25000+ | 8.31 грн |
| 62500+ | 7.99 грн |
| PD3S160Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.89 грн |
| 6000+ | 11.34 грн |
| 9000+ | 11.07 грн |
| 15000+ | 10.22 грн |
| 21000+ | 9.47 грн |
| 30000+ | 9.26 грн |
| PDS360Q-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.65 грн |
| SBR3U60SA-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
товару немає в наявності
В кошику
од. на суму грн.
| SBRT2U45LP-7 |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBRT4U45LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
Description: DIODE SBR 45V 4A 2DFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZXMP10A13FQTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1119000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.02 грн |
| 6000+ | 18.71 грн |
| 9000+ | 17.93 грн |
| 15000+ | 16.58 грн |
| AP3105CVKTR-G1 |
Виробник: Diodes Incorporated
Description: IC PWM CTLR CURR MODE
Description: IC PWM CTLR CURR MODE
товару немає в наявності
В кошику
од. на суму грн.
| AP3785TMTR-G1 |
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Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
на замовлення 3489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.78 грн |
| 10+ | 71.84 грн |
| 25+ | 60.13 грн |
| 100+ | 43.94 грн |
| 250+ | 37.81 грн |
| 500+ | 34.03 грн |
| 1000+ | 30.36 грн |
| AP7335A-33W5-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 300MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 3.3V 300MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 19468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.13 грн |
| 10+ | 57.40 грн |
| 25+ | 53.89 грн |
| 100+ | 41.28 грн |
| 250+ | 38.34 грн |
| 500+ | 32.63 грн |
| 1000+ | 25.68 грн |
| B2100AF-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 292939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.21 грн |
| 16+ | 21.24 грн |
| 100+ | 17.31 грн |
| 500+ | 12.29 грн |
| 1000+ | 10.63 грн |
| 2000+ | 9.94 грн |
| 5000+ | 8.63 грн |
| B360AM-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 93460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.73 грн |
| 13+ | 25.34 грн |
| 100+ | 22.31 грн |
| 500+ | 15.97 грн |
| 1000+ | 13.59 грн |
| 2000+ | 13.02 грн |
| DDZ15Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
Description: DIODE ZENER 15V 310MW SOD123
на замовлення 47873 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.40 грн |
| 16+ | 20.91 грн |
| 100+ | 11.09 грн |
| 500+ | 6.85 грн |
| 1000+ | 4.66 грн |
| DDZ16Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
Description: DIODE ZENER 16V 310MW SOD123
на замовлення 650811 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.40 грн |
| 16+ | 20.91 грн |
| 100+ | 11.09 грн |
| 500+ | 6.85 грн |
| 1000+ | 4.66 грн |
| DDZ17Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
Description: DIODE ZENER 17V 310MW SOD123
на замовлення 193366000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMN3016LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 9178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.91 грн |
| 10+ | 36.66 грн |
| 100+ | 22.53 грн |
| 500+ | 17.01 грн |
| 1000+ | 15.32 грн |
| DMP2023UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Description: MOSFET P-CH 20V 7.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
на замовлення 3110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.20 грн |
| 10+ | 47.81 грн |
| 100+ | 31.31 грн |
| 500+ | 22.71 грн |
| 1000+ | 20.57 грн |
| FMMT493QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 176322 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.84 грн |
| 12+ | 27.88 грн |
| 100+ | 17.82 грн |
| 500+ | 12.66 грн |
| 1000+ | 11.35 грн |
| FMMT593QTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 91802 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.50 грн |
| 11+ | 32.56 грн |
| 100+ | 20.96 грн |
| 500+ | 14.99 грн |
| 1000+ | 13.47 грн |
| FZT493ATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Description: TRANS NPN 100V 1A SOT223
на замовлення 137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.06 грн |
| 10+ | 47.89 грн |
| 100+ | 36.67 грн |
| LMV393M8-13 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
на замовлення 1029473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.84 грн |
| 21+ | 15.83 грн |
| 25+ | 14.04 грн |
| 100+ | 11.34 грн |
| 250+ | 10.47 грн |
| 500+ | 9.94 грн |
| 1000+ | 9.35 грн |
| PD3S160Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 91405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.43 грн |
| 13+ | 27.14 грн |
| 100+ | 21.70 грн |
| 500+ | 15.48 грн |
| 1000+ | 13.91 грн |
| PDS360Q-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 18359 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 48.54 грн |
| 10+ | 40.84 грн |
| 100+ | 28.28 грн |
| 500+ | 22.18 грн |
| 1000+ | 18.87 грн |
| 2000+ | 16.81 грн |
| SBR3U60SA-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
на замовлення 4109 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBRT2U45LP-7 |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SBR 45V 2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
на замовлення 51 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.39 грн |
| 11+ | 31.57 грн |
| SBRT4U45LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
Description: DIODE SBR 45V 4A 2DFN
на замовлення 4396 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZXMP10A13FQTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1120865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 51.91 грн |
| 100+ | 34.11 грн |
| 500+ | 24.83 грн |
| 1000+ | 22.52 грн |
| DDZ17Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
Description: DIODE ZENER 17V 310MW SOD123
на замовлення 193366000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR3U60SA-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
на замовлення 4109 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMP2023UFDF-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Description: MOSFET P-CH 20V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 17.72 грн |
| 30000+ | 16.90 грн |
| DMT3008LFDF-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 19.65 грн |
| PT7C4511WE |
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Виробник: Diodes Incorporated
Description: IC PLL CLOCK MULT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PLL CLOCK MULT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| AP7342D-3030FS6-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 3V/3V X2DFN1212-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: X2-DFN1212-6
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V/3V X2DFN1212-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: X2-DFN1212-6
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
Protection Features: Over Current
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 20.24 грн |


























