Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71655) > Сторінка 322 з 1195
| Фото | Назва | Виробник | Інформація |
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AZ1117IH-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
на замовлення 1769 шт: термін постачання 21-31 дні (днів) |
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AH5775-P-B | Diodes Incorporated |
Description: IC MOTOR DRIVER 2.5V-18V TO94Packaging: Bulk Package / Case: 4-SSIP Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 300mA Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.5V ~ 18V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 2.5V ~ 18V Supplier Device Package: TO-94 Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DML1005LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 3.8mOhm Voltage - Load: 0.8V ~ 4V Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 107500 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 57500 шт: термін постачання 21-31 дні (днів) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A/70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 110000 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 4294967295 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15004500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15006000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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D14V0S1U2WS-7 | Diodes Incorporated |
Description: TVS DIODE 14VWM 26VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 360pF @ 1MHz Current - Peak Pulse (10/1000µs): 50A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1300W (1.3kW) Power Line Protection: No |
на замовлення 9552 шт: термін постачання 21-31 дні (днів) |
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 2415 шт: термін постачання 21-31 дні (днів) |
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
на замовлення 10206 шт: термін постачання 21-31 дні (днів) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
на замовлення 17889 шт: термін постачання 21-31 дні (днів) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
на замовлення 37118 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 108296 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 108220 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 58894 шт: термін постачання 21-31 дні (днів) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
на замовлення 13552 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A/70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 112494 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 4294967295 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15004500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15006000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
на замовлення 13400 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 4294967295 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15004500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15006000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| AL5801EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5801Packaging: Box Voltage - Input: 3.5V ~ 20V Current - Output / Channel: 350mA Utilized IC / Part: AL5801 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AL5802EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5802Packaging: Box Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 120mA Utilized IC / Part: AL5802 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AL8400EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8400Packaging: Box Voltage - Input: 4V ~ 18V Current - Output / Channel: 150mA Utilized IC / Part: AL8400 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8805EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8805 Packaging: Box Features: Dimmable Voltage - Input: 6V ~ 30V Current - Output / Channel: 680mA Utilized IC / Part: AL8805 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8805EV2 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8805 Packaging: Box Voltage - Input: 12VAC, 12V ~ 20V Current - Output / Channel: 680mA Utilized IC / Part: AL8805 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8806EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Packaging: Box Features: Dimmable Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.5A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8806EV4 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Packaging: Box Features: Dimmable Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.5A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8806EV6 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Packaging: Box Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.1A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8807AEV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8807A Packaging: Box Features: Dimmable Voltage - Input: 6V ~ 36V Current - Output / Channel: 680mA Utilized IC / Part: AL8807A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8807AEV3 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8807A Packaging: Box Features: Dimmable Voltage - Input: 6V ~ 36V Current - Output / Channel: 1A Utilized IC / Part: AL8807A Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8808EV1 | Diodes Incorporated |
Description: BOARD LED DRIVER 680MA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL8808EV2 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8808Packaging: Box Voltage - Input: 12VAC, 12V ~ 20V Current - Output / Channel: 680mA Utilized IC / Part: AL8808 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL9910EV4 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910APackaging: Box Voltage - Input: 85 ~ 277 VAC Current - Output / Channel: 180mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL9910EV5 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910APackaging: Box Voltage - Input: 85 ~ 277 VAC Current - Output / Channel: 240mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AL9910EV6 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910APackaging: Box Voltage - Input: 90 ~ 132 VAC Current - Output / Channel: 75mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 4 Non-Isolated Outputs Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SBRTF40U100CT | Diodes Incorporated |
Description: DIODE ARR SBR 100V 20A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRTF40U100CTFP | Diodes Incorporated |
Description: DIODE RECT SB 100V 20A ITO-220APackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AH3763Q-P-A | Diodes Incorporated |
Description: MAGNETIC SWITCH LATCH 3SIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AH3765Q-P-A | Diodes Incorporated |
Description: IC HALL LATCH SWITCH SIP-3 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| AH3766Q-P-A | Diodes Incorporated |
Description: IC HALL LATCH SWITCH SIP-3 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| AZ1117IH-5.0TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.69 грн |
| 30+ | 10.27 грн |
| 34+ | 9.09 грн |
| 100+ | 7.30 грн |
| 250+ | 6.71 грн |
| 500+ | 6.35 грн |
| 1000+ | 5.96 грн |
| AH5775-P-B |
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Виробник: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMC2450UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DML1005LDS-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
товару немає в наявності
В кошику
од. на суму грн.
| DMN63D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.00 грн |
| 6000+ | 2.58 грн |
| 9000+ | 2.43 грн |
| DMNH10H028SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 40.54 грн |
| 5000+ | 37.18 грн |
| 12500+ | 36.48 грн |
| DMNH4006SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 55.31 грн |
| 5000+ | 51.26 грн |
| 12500+ | 51.08 грн |
| DMP10H4D2S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.35 грн |
| 6000+ | 4.66 грн |
| 9000+ | 4.41 грн |
| 15000+ | 3.87 грн |
| DMP510DL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.65 грн |
| 6000+ | 3.19 грн |
| 9000+ | 3.10 грн |
| 15000+ | 2.89 грн |
| 21000+ | 2.88 грн |
| 30000+ | 2.80 грн |
| DMT10H015LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 28.44 грн |
| 4000+ | 25.81 грн |
| 6000+ | 25.35 грн |
| DMT10H015LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 107500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 30.51 грн |
| 5000+ | 28.96 грн |
| 7500+ | 28.64 грн |
| DMT10H015LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 57500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.76 грн |
| 5000+ | 28.42 грн |
| 7500+ | 28.17 грн |
| DMT6004LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 44.35 грн |
| 5000+ | 39.88 грн |
| 7500+ | 38.44 грн |
| DMTH6010LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.37 грн |
| 5000+ | 28.17 грн |
| DMTH6010LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 4294967295 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15004500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7D |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15006000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR8E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 14.11 грн |
| 3000+ | 13.45 грн |
| 4500+ | 12.94 грн |
| 7500+ | 11.70 грн |
| D14V0S1U2WS-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
на замовлення 9552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 21+ | 14.80 грн |
| 100+ | 7.18 грн |
| 500+ | 6.67 грн |
| 1000+ | 6.55 грн |
| DMC2450UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.94 грн |
| 16+ | 19.87 грн |
| 100+ | 12.56 грн |
| 500+ | 8.83 грн |
| 1000+ | 7.87 грн |
| DMN63D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
на замовлення 10206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.90 грн |
| 35+ | 8.76 грн |
| 100+ | 5.45 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.28 грн |
| DMNH10H028SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.11 грн |
| DMNH4006SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.29 грн |
| DMP10H4D2S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
на замовлення 17889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.88 грн |
| 20+ | 15.18 грн |
| 100+ | 9.56 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.93 грн |
| DMP510DL-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 37118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.96 грн |
| 24+ | 12.69 грн |
| 100+ | 6.71 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.85 грн |
| DMT10H015LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 108296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.65 грн |
| 10+ | 35.50 грн |
| 100+ | 31.91 грн |
| 500+ | 29.82 грн |
| DMT10H015LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 108220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.99 грн |
| 10+ | 61.86 грн |
| 100+ | 43.64 грн |
| 500+ | 34.47 грн |
| 1000+ | 32.48 грн |
| DMT10H015LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 58894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.87 грн |
| 10+ | 70.93 грн |
| 100+ | 46.44 грн |
| 500+ | 35.04 грн |
| 1000+ | 31.97 грн |
| DMT6004LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
на замовлення 13552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.52 грн |
| 10+ | 95.40 грн |
| 100+ | 64.66 грн |
| 500+ | 48.34 грн |
| 1000+ | 44.37 грн |
| DMTH6010LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 112494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.02 грн |
| 10+ | 71.57 грн |
| 100+ | 48.01 грн |
| 500+ | 35.58 грн |
| 1000+ | 32.53 грн |
| DMTH6010LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 4294967295 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15004500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7D |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15006000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR8E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
на замовлення 13400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.63 грн |
| 10+ | 30.89 грн |
| 100+ | 24.31 грн |
| 500+ | 17.47 грн |
| DMTH6010LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 4294967295 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15004500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR5E45P5-7D |
![]() |
Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15006000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AL5801EV1 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| AL5802EV1 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL8400EV1 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AL8805EV1 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR AL8805
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL8805EV2 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL8806EV1 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| AL8806EV4 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| AL8806EV6 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| AL8807AEV1 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| AL8807AEV3 |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL8808EV1 |
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Виробник: Diodes Incorporated
Description: BOARD LED DRIVER 680MA
Description: BOARD LED DRIVER 680MA
товару немає в наявності
В кошику
од. на суму грн.
| AL8808EV2 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| AL9910EV4 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL9910EV5 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| AL9910EV6 |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| SBRTF40U100CT |
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Виробник: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SBRTF40U100CTFP |
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Виробник: Diodes Incorporated
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| AH3763Q-P-A |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Description: MAGNETIC SWITCH LATCH 3SIP
товару немає в наявності
В кошику
од. на суму грн.
| AH3765Q-P-A |
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Виробник: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AH3766Q-P-A |
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Виробник: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.













