Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 56 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DDTC115GE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Resistor - Emitter Base (R2): 100 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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DDTC123EE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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DDTC143XE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC144EE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Resistors Included: R1 and R2 Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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MMBTA28-7 | Diodes Incorporated |
Description: TRANS NPN DARL 80V 0.5A SOT23-3 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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SDMP0340LT-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 30MA SOT523 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB0640M-13 | Diodes Incorporated |
Description: THYRISTOR PROTECT BI-DIR 50A SMB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB0720L-13 | Diodes Incorporated |
Description: THYRISTOR 65V 150A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB0900M-13 | Diodes Incorporated |
Description: THYRISTOR 75V 250A DO-214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB1100H-13 | Diodes Incorporated |
Description: THYRISTOR PROTECT BIDIR 100A SMB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB1300L-13 | Diodes Incorporated |
Description: THYRISTOR 120V 150A DO-214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB1800M-13 | Diodes Incorporated |
Description: THYRISTOR 160V 250A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB2300H-13 | Diodes Incorporated |
Description: THYRISTOR 190V 400A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB2300M-13 | Diodes Incorporated |
Description: THYRISTOR 190V 250A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB3100H-13 | Diodes Incorporated |
Description: THYRISTOR 275V 400A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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TB3100L-13 | Diodes Incorporated |
Description: THYRISTOR 275V 150A DO214AA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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2DA1774Q-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.15A SOT-523 |
на замовлення 154 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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2DA1774R-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.15A SOT-523 |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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2DA1774S-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.15A SOT-523 |
на замовлення 2617 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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2DC4617R-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.15A SOT523DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Discontinued at Digi-Key Supplier Device Package: SOT-523 Frequency - Transition: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B130LAW-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 1A SOD123 Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC113TE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523Packaging: Cut Tape (CT) |
на замовлення 3692 шт: термін постачання 21-31 дні (днів) |
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DDTC114EE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Part Status: Discontinued at Digi-Key Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC114GE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523 |
на замовлення 5812 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DDTC114YE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC115GE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 100 kOhms Frequency - Transition: 250 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC124XE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523 |
на замовлення 5579 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DDTC125TE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523Packaging: Cut Tape (CT) |
на замовлення 2897 шт: термін постачання 21-31 дні (днів) |
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DDTC143XE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDTC144EE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBTA28-7 | Diodes Incorporated |
Description: TRANS NPN DARL 80V 0.5A SOT23-3 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SDMP0340LT-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 30MA SOT523 |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB0640M-13 | Diodes Incorporated |
Description: THYRISTOR PROTECT BI-DIR 50A SMB |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB0720L-13 | Diodes Incorporated |
Description: THYRISTOR 65V 150A DO214AA |
на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB1100H-13 | Diodes Incorporated |
Description: THYRISTOR PROTECT BIDIR 100A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB1800H-13 | Diodes Incorporated |
Description: THYRISTOR 160V 400A DO214AA |
на замовлення 2866 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB1800M-13 | Diodes Incorporated |
Description: THYRISTOR 160V 250A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB2300M-13 | Diodes Incorporated |
Description: THYRISTOR 190V 250A DO214AA |
на замовлення 1539 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB2600H-13 | Diodes Incorporated |
Description: THYRISTOR 220V 400A DO214AACurrent - Peak Pulse (8/20µs): 400 A Current - Peak Pulse (10/1000µs): 100 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 3.5 V Voltage - Off State: 220V Voltage - Breakover: 300V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 80pF Packaging: Cut Tape (CT) |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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TB3100H-13 | Diodes Incorporated |
Description: THYRISTOR 275V 400A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB3100L-13 | Diodes Incorporated |
Description: THYRISTOR 275V 150A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PI6C9911E-2J | Diodes Incorporated |
Description: IC CLOCK BUFFER 32PLCCPackaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Output: TTL Frequency - Max: 125MHz Type: Clock Buffer Input: TTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 1:8 Differential - Input:Output: No/No Supplier Device Package: 32-PLCC (11.43x13.97) PLL: Yes Divider/Multiplier: Yes/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ZLLS2000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2.2A SOT236Current - Reverse Leakage @ Vr: 40 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-6 Current - Average Rectified (Io): 2.2A Capacitance @ Vr, F: 65pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 314626 шт: термін постачання 21-31 дні (днів) |
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ZLLS1000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1.16A SOT23-3Current - Reverse Leakage @ Vr: 20 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 1.16A Capacitance @ Vr, F: 28pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZLLS500TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 700MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 30V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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ZXMN2A02N8TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 8.3A 8-SOIC |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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ZXMN2A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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ZXMN3A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.2A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 483000 шт: термін постачання 21-31 дні (днів) |
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ZXM64N035GTA | Diodes Incorporated |
Description: MOSFET N-CH 35V 6.7A SOT223 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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ZXMP3A16GTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ZXM64P035GTA | Diodes Incorporated |
Description: MOSFET P-CH 35V 3.8A SOT223 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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ZXMN6A09GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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ZXMN6A11ZTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.7A SOT89-3Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ZXMN6A25DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.8A 8SORds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZXMP6A18DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.7A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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ZXMP6A17GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 3A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 8500 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A13GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 1.7A SOT223Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17E6TA | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.3A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1900 шт В кошику од. на суму грн. | ||||||||||||
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ZXMP6A13FTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 900MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| DDTC115GE-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| DDTC123EE-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| DDTC143XE-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DDTC144EE-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| MMBTA28-7 |
Виробник: Diodes Incorporated
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SDMP0340LT-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 30MA SOT523
Description: DIODE SCHOTTKY 40V 30MA SOT523
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB0640M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Description: THYRISTOR PROTECT BI-DIR 50A SMB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB0720L-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 65V 150A DO214AA
Description: THYRISTOR 65V 150A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| TB0900M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 75V 250A DO-214AA
Description: THYRISTOR 75V 250A DO-214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB1100H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Description: THYRISTOR PROTECT BIDIR 100A SMB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB1300L-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 120V 150A DO-214AA
Description: THYRISTOR 120V 150A DO-214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB1800M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Description: THYRISTOR 160V 250A DO214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB2300H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 190V 400A DO214AA
Description: THYRISTOR 190V 400A DO214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB2300M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Description: THYRISTOR 190V 250A DO214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB3100H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 275V 400A DO214AA
Description: THYRISTOR 275V 400A DO214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| TB3100L-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 275V 150A DO214AA
Description: THYRISTOR 275V 150A DO214AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 2DA1774Q-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
Description: TRANS PNP 50V 0.15A SOT-523
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
| 2DA1774R-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
Description: TRANS PNP 50V 0.15A SOT-523
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
| 2DA1774S-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 50V 0.15A SOT-523
Description: TRANS PNP 50V 0.15A SOT-523
на замовлення 2617 шт:
термін постачання 21-31 дні (днів)
| 2DC4617R-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.15A SOT523
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
Description: TRANS NPN 50V 0.15A SOT523
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
| B130LAW-7 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DDTC113TE-7 |
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на замовлення 3692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.12 грн |
| 50+ | 6.09 грн |
| 100+ | 5.20 грн |
| 500+ | 4.60 грн |
| DDTC114EE-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PREBIAS NPN 50V SOT523
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| DDTC114GE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Description: TRANS PREBIAS NPN 150MW SOT523
на замовлення 5812 шт:
термін постачання 21-31 дні (днів)
| DDTC114YE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Description: TRANS PREBIAS NPN 150MW SOT523
товару немає в наявності
В кошику
од. на суму грн.
| DDTC115GE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
товару немає в наявності
В кошику
од. на суму грн.
| DDTC124XE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Description: TRANS PREBIAS NPN 150MW SOT523
на замовлення 5579 шт:
термін постачання 21-31 дні (днів)
| DDTC125TE-7 |
![]() |
на замовлення 2897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 18+ | 17.68 грн |
| 100+ | 11.91 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.81 грн |
| DDTC143XE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PREBIAS NPN 50V SOT523
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| DDTC144EE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA28-7 |
Виробник: Diodes Incorporated
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SDMP0340LT-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 30MA SOT523
Description: DIODE SCHOTTKY 40V 30MA SOT523
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| TB0640M-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Description: THYRISTOR PROTECT BI-DIR 50A SMB
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
| TB0720L-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 65V 150A DO214AA
Description: THYRISTOR 65V 150A DO214AA
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)
| TB1100H-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Description: THYRISTOR PROTECT BIDIR 100A SMB
товару немає в наявності
В кошику
од. на суму грн.
| TB1800H-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 160V 400A DO214AA
Description: THYRISTOR 160V 400A DO214AA
на замовлення 2866 шт:
термін постачання 21-31 дні (днів)
| TB1800M-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Description: THYRISTOR 160V 250A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| TB2300M-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Description: THYRISTOR 190V 250A DO214AA
на замовлення 1539 шт:
термін постачання 21-31 дні (днів)
| TB2600H-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.70 грн |
| 10+ | 63.31 грн |
| 100+ | 49.24 грн |
| TB3100H-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 275V 400A DO214AA
Description: THYRISTOR 275V 400A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| TB3100L-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 275V 150A DO214AA
Description: THYRISTOR 275V 150A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| PI6C9911E-2J |
![]() |
Виробник: Diodes Incorporated
Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ZLLS2000TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 314626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.76 грн |
| 6000+ | 19.18 грн |
| 9000+ | 17.67 грн |
| ZLLS1000TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT23-3
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1.16A SOT23-3
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.49 грн |
| ZLLS500TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZXMN2A02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
Description: MOSFET N-CH 20V 8.3A 8-SOIC
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| ZXMN2A14FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.57 грн |
| 9000+ | 17.49 грн |
| ZXMN3A14FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 483000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.04 грн |
| 6000+ | 14.42 грн |
| 9000+ | 14.27 грн |
| 15000+ | 12.82 грн |
| ZXM64N035GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Description: MOSFET N-CH 35V 6.7A SOT223
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXMP3A16GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 36.83 грн |
| 2000+ | 32.64 грн |
| 3000+ | 31.19 грн |
| 5000+ | 27.75 грн |
| 7000+ | 26.85 грн |
| 10000+ | 25.97 грн |
| ZXM64P035GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Description: MOSFET P-CH 35V 3.8A SOT223
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXMN6A09GTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 42.09 грн |
| 2000+ | 36.01 грн |
| 3000+ | 35.52 грн |
| 5000+ | 32.24 грн |
| ZXMN6A11ZTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 29.73 грн |
| ZXMN6A25DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP6A18DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| ZXMP6A17GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 23.08 грн |
| 3000+ | 19.22 грн |
| ZXMP6A17DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 8500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 37.38 грн |
| 1000+ | 32.87 грн |
| 1500+ | 31.28 грн |
| 2500+ | 27.68 грн |
| 3500+ | 26.68 грн |
| 5000+ | 26.08 грн |
| ZXMP6A13GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 17.95 грн |
| 2000+ | 17.01 грн |
| 3000+ | 16.59 грн |
| 5000+ | 15.01 грн |
| 7000+ | 14.89 грн |
| ZXMP6A17E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| ZXMP6A13FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.63 грн |
| 6000+ | 11.17 грн |
| 9000+ | 10.66 грн |
| 15000+ | 9.46 грн |
















