Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73311) > Сторінка 59 з 1222
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TB1800H-13 | Diodes Incorporated |
Description: THYRISTOR 160V 400A DO214AA |
на замовлення 2866 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB1800M-13 | Diodes Incorporated |
Description: THYRISTOR 160V 250A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB2300M-13 | Diodes Incorporated |
Description: THYRISTOR 190V 250A DO214AA |
на замовлення 1539 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB2600H-13 | Diodes Incorporated |
Description: THYRISTOR 220V 400A DO214AACurrent - Peak Pulse (8/20µs): 400 A Current - Peak Pulse (10/1000µs): 100 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 3.5 V Voltage - Off State: 220V Voltage - Breakover: 300V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 80pF Packaging: Cut Tape (CT) |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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TB3100H-13 | Diodes Incorporated |
Description: THYRISTOR 275V 400A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB3100L-13 | Diodes Incorporated |
Description: THYRISTOR 275V 150A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PI6C9911E-2J | Diodes Incorporated |
Description: IC CLOCK BUFFER 32PLCCPackaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Output: TTL Frequency - Max: 125MHz Type: Clock Buffer Input: TTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 1:8 Differential - Input:Output: No/No Supplier Device Package: 32-PLCC (11.43x13.97) PLL: Yes Divider/Multiplier: Yes/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZLLS2000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2.2A SOT236Current - Reverse Leakage @ Vr: 40 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-6 Current - Average Rectified (Io): 2.2A Capacitance @ Vr, F: 65pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 314626 шт: термін постачання 21-31 дні (днів) |
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ZLLS1000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1.16A SOT233Current - Reverse Leakage @ Vr: 20 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 1.16A Capacitance @ Vr, F: 28pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 1137000 шт: термін постачання 21-31 дні (днів) |
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ZLLS500TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 700MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 30V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMN2A02N8TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 8.3A 8-SOIC |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMN2A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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ZXMN3A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.2A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 483000 шт: термін постачання 21-31 дні (днів) |
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ZXM64N035GTA | Diodes Incorporated |
Description: MOSFET N-CH 35V 6.7A SOT223 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMP3A16GTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ZXM64P035GTA | Diodes Incorporated |
Description: MOSFET P-CH 35V 3.8A SOT223 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A09GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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ZXMN6A11ZTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.7A SOT89-3Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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ZXMN6A25DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.8A 8SORds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP6A18DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.7A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 3A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 8500 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A13GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 1.7A SOT223Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17E6TA | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.3A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1900 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMP6A13FTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 900MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ZXMN10B08E6TA | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT26Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.1W (Ta) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ZXM41N10FTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 170MA SOT23-3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMP10A18GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 2.6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ZXMP10A17E6TA | Diodes Incorporated |
Description: MOSFET P-CH 100V 1.3A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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ZXMP10A13FTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 600MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZAMP001H6TA | Diodes Incorporated |
Description: AMPLIFIER 18DB GAIN LNA SC70-6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZAMP003H6TA | Diodes Incorporated |
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZLLS2000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2.2A SOT236Current - Reverse Leakage @ Vr: 40 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-6 Current - Average Rectified (Io): 2.2A Capacitance @ Vr, F: 65pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 314694 шт: термін постачання 21-31 дні (днів) |
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ZLLS1000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1.16A SOT233Current - Reverse Leakage @ Vr: 20 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 1.16A Capacitance @ Vr, F: 28pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1137277 шт: термін постачання 21-31 дні (днів) |
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ZLLS500TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 700MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 30V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
на замовлення 1698 шт: термін постачання 21-31 дні (днів) |
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ZXMN2A02N8TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 8.3A 8-SOIC |
на замовлення 749 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN2A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V |
на замовлення 20658 шт: термін постачання 21-31 дні (днів) |
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ZXMN3A14FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.2A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 485495 шт: термін постачання 21-31 дні (днів) |
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ZXM64N035GTA | Diodes Incorporated |
Description: MOSFET N-CH 35V 6.7A SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP3A16GTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 12067 шт: термін постачання 21-31 дні (днів) |
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ZXM64P035GTA | Diodes Incorporated |
Description: MOSFET P-CH 35V 3.8A SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A09GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.4A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 50721 шт: термін постачання 21-31 дні (днів) |
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ZXMN6A11ZTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.7A SOT89-3Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 6039 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A18DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.7A 8SOTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W |
на замовлення 1765 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
на замовлення 664 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 9193 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A13GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 1.7A SOT223Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) |
на замовлення 15125 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17E6TA | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.3A SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2158 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A13FTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 900MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V |
на замовлення 16095 шт: термін постачання 21-31 дні (днів) |
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ZXMN10B08E6TA | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT26Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 12583 шт: термін постачання 21-31 дні (днів) |
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ZXM41N10FTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 170MA SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP10A18GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 2.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
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ZXMP10A17E6TA | Diodes Incorporated |
Description: MOSFET P-CH 100V 1.3A SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V |
на замовлення 24007 шт: термін постачання 21-31 дні (днів) |
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ZXMP10A13FTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 600MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZAMP001H6TA | Diodes Incorporated |
Description: AMPLIFIER 18DB GAIN LNA SC70-6 |
на замовлення 2601 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZAMP002H6TA | Diodes Incorporated |
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6Supplier Device Package: SC-70-6 Test Frequency: 950MHz ~ 2.15GHz P1dB: 7dbm Noise Figure: 7dB Current - Supply: 21mA ~ 24mA Gain: 25dB Voltage - Supply: 4.5V ~ 5.5V RF Type: General Purpose Frequency: 800MHz ~ 2.5GHz Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2548 шт: термін постачання 21-31 дні (днів) |
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BAT54ST-7 | Diodes Incorporated |
Description: DIODE ARR SCHOT 30V 200MA SOT523Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SOT-523 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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SD103ATW-7 | Diodes Incorporated |
Description: DIODE ARR SCHOT 40V 175MA SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 175mA Supplier Device Package: SOT-363 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBD3004BRM-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 300V 225MA SOT26 Current - Reverse Leakage @ Vr: 100 nA @ 240 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-26 Current - Average Rectified (Io) (per Diode): 225mA (DC) Diode Configuration: 2 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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2N7002T-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 115MA SOT-523Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. |
| TB1800H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 160V 400A DO214AA
Description: THYRISTOR 160V 400A DO214AA
на замовлення 2866 шт:
термін постачання 21-31 дні (днів)
| TB1800M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Description: THYRISTOR 160V 250A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| TB2300M-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Description: THYRISTOR 190V 250A DO214AA
на замовлення 1539 шт:
термін постачання 21-31 дні (днів)
| TB2600H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 62.01 грн |
| 100+ | 48.23 грн |
| TB3100H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 275V 400A DO214AA
Description: THYRISTOR 275V 400A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| TB3100L-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 275V 150A DO214AA
Description: THYRISTOR 275V 150A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| PI6C9911E-2J |
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Виробник: Diodes Incorporated
Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK BUFFER 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 125MHz
Type: Clock Buffer
Input: TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 32-PLCC (11.43x13.97)
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ZLLS2000TA |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 314626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.33 грн |
| 6000+ | 18.79 грн |
| 9000+ | 17.31 грн |
| ZLLS1000TA |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 1137000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.70 грн |
| 6000+ | 13.59 грн |
| 9000+ | 13.01 грн |
| 15000+ | 11.69 грн |
| ZLLS500TA |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZXMN2A02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
Description: MOSFET N-CH 20V 8.3A 8-SOIC
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| ZXMN2A14FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.83 грн |
| 6000+ | 13.12 грн |
| 9000+ | 12.53 грн |
| 15000+ | 11.14 грн |
| ZXMN3A14FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 483000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.73 грн |
| 6000+ | 14.12 грн |
| 9000+ | 13.98 грн |
| 15000+ | 12.56 грн |
| ZXM64N035GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Description: MOSFET N-CH 35V 6.7A SOT223
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXMP3A16GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 36.07 грн |
| 2000+ | 31.96 грн |
| 3000+ | 30.55 грн |
| 5000+ | 27.18 грн |
| 7000+ | 26.30 грн |
| 10000+ | 25.44 грн |
| ZXM64P035GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Description: MOSFET P-CH 35V 3.8A SOT223
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXMN6A09GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 41.23 грн |
| 2000+ | 35.27 грн |
| 3000+ | 34.79 грн |
| 5000+ | 31.58 грн |
| ZXMN6A11ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.7A SOT89-3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 27.74 грн |
| 2000+ | 24.45 грн |
| 3000+ | 23.30 грн |
| 5000+ | 20.66 грн |
| ZXMN6A25DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP6A18DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 3.7A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 51.79 грн |
| 1000+ | 44.65 грн |
| ZXMP6A17GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXMP6A17DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 8500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 36.61 грн |
| 1000+ | 32.20 грн |
| 1500+ | 30.64 грн |
| 2500+ | 27.11 грн |
| 3500+ | 26.13 грн |
| 5000+ | 25.55 грн |
| ZXMP6A13GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Description: MOSFET P-CH 60V 1.7A SOT223
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 17.58 грн |
| 2000+ | 16.66 грн |
| 3000+ | 16.25 грн |
| 5000+ | 14.70 грн |
| 7000+ | 14.58 грн |
| ZXMP6A17E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| ZXMP6A13FTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.37 грн |
| 6000+ | 10.94 грн |
| 9000+ | 10.44 грн |
| 15000+ | 9.27 грн |
| ZXMN10B08E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Description: MOSFET N-CH 100V 1.6A SOT26
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.22 грн |
| 6000+ | 17.11 грн |
| 9000+ | 16.40 грн |
| ZXM41N10FTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Description: MOSFET N-CH 100V 170MA SOT23-3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZXMP10A18GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 60.55 грн |
| 2000+ | 54.14 грн |
| ZXMP10A17E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.83 грн |
| 6000+ | 16.76 грн |
| 9000+ | 16.07 грн |
| 15000+ | 14.87 грн |
| ZXMP10A13FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZAMP001H6TA |
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Виробник: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
Description: AMPLIFIER 18DB GAIN LNA SC70-6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZAMP003H6TA |
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Виробник: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZLLS2000TA |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-6
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 314694 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 38.95 грн |
| 100+ | 32.82 грн |
| 500+ | 23.95 грн |
| 1000+ | 21.74 грн |
| ZLLS1000TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 1.16A
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1137277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 31.49 грн |
| 100+ | 24.83 грн |
| 500+ | 17.87 грн |
| 1000+ | 16.08 грн |
| ZLLS500TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 13+ | 24.55 грн |
| 100+ | 19.95 грн |
| 500+ | 14.29 грн |
| 1000+ | 12.86 грн |
| ZXMN2A02N8TA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
Description: MOSFET N-CH 20V 8.3A 8-SOIC
на замовлення 749 шт:
термін постачання 21-31 дні (днів)
| ZXMN2A14FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
на замовлення 20658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 37.01 грн |
| 100+ | 24.00 грн |
| 500+ | 17.26 грн |
| 1000+ | 15.56 грн |
| ZXMN3A14FTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 485495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 14+ | 21.64 грн |
| 100+ | 18.07 грн |
| 500+ | 16.35 грн |
| 1000+ | 15.37 грн |
| ZXM64N035GTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Description: MOSFET N-CH 35V 6.7A SOT223
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP3A16GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 12067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 72.16 грн |
| 100+ | 48.29 грн |
| 500+ | 35.70 грн |
| ZXM64P035GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Description: MOSFET P-CH 35V 3.8A SOT223
товару немає в наявності
В кошику
од. на суму грн.
| ZXMN6A09GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 5.4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 50721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.51 грн |
| 10+ | 81.49 грн |
| 100+ | 54.82 грн |
| 500+ | 40.71 грн |
| ZXMN6A11ZTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 60V 2.7A SOT89-3
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 6039 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 57.08 грн |
| 100+ | 37.72 грн |
| 500+ | 27.58 грн |
| ZXMP6A18DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Description: MOSFET 2P-CH 60V 3.7A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
на замовлення 1765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.91 грн |
| 10+ | 89.17 грн |
| 100+ | 60.54 грн |
| ZXMP6A17GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.52 грн |
| 10+ | 42.16 грн |
| 100+ | 27.46 грн |
| 500+ | 19.85 грн |
| ZXMP6A17DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 9193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.04 грн |
| 10+ | 66.93 грн |
| 100+ | 44.76 грн |
| ZXMP6A13GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET P-CH 60V 1.7A SOT223
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
на замовлення 15125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 10+ | 35.89 грн |
| 100+ | 19.02 грн |
| ZXMP6A17E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 35.07 грн |
| 100+ | 22.74 грн |
| 500+ | 16.37 грн |
| 1000+ | 14.77 грн |
| ZXMP6A13FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
на замовлення 16095 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.09 грн |
| 100+ | 20.76 грн |
| 500+ | 14.89 грн |
| 1000+ | 13.41 грн |
| ZXMN10B08E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 1.6A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 12583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.27 грн |
| 10+ | 47.46 грн |
| 100+ | 31.17 грн |
| 500+ | 22.70 грн |
| 1000+ | 20.58 грн |
| ZXM41N10FTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Description: MOSFET N-CH 100V 170MA SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP10A18GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.20 грн |
| 10+ | 114.77 грн |
| 100+ | 78.70 грн |
| 500+ | 59.37 грн |
| ZXMP10A17E6TA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
на замовлення 24007 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.49 грн |
| 10+ | 46.41 грн |
| 100+ | 30.53 грн |
| 500+ | 22.23 грн |
| 1000+ | 20.17 грн |
| ZXMP10A13FTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 600MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| ZAMP001H6TA |
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Виробник: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
Description: AMPLIFIER 18DB GAIN LNA SC70-6
на замовлення 2601 шт:
термін постачання 21-31 дні (днів)
| ZAMP002H6TA |
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Виробник: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Supplier Device Package: SC-70-6
Test Frequency: 950MHz ~ 2.15GHz
P1dB: 7dbm
Noise Figure: 7dB
Current - Supply: 21mA ~ 24mA
Gain: 25dB
Voltage - Supply: 4.5V ~ 5.5V
RF Type: General Purpose
Frequency: 800MHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Supplier Device Package: SC-70-6
Test Frequency: 950MHz ~ 2.15GHz
P1dB: 7dbm
Noise Figure: 7dB
Current - Supply: 21mA ~ 24mA
Gain: 25dB
Voltage - Supply: 4.5V ~ 5.5V
RF Type: General Purpose
Frequency: 800MHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2548 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 10+ | 34.18 грн |
| 25+ | 32.15 грн |
| 100+ | 28.09 грн |
| 250+ | 27.14 грн |
| 500+ | 26.39 грн |
| 1000+ | 25.58 грн |
| BAT54ST-7 |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOT 30V 200MA SOT523
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOT-523
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SD103ATW-7 |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| MMBD3004BRM-7 |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT26
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-26
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 300V 225MA SOT26
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-26
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 2N7002T-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 115MA SOT-523
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
















