Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74590) > Сторінка 54 з 1244
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZVN4206AVSTOA | Diodes Incorporated |
Description: MOSFET N-CH 60V 600MA E-LINEPackaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXFV201N14TA | Diodes Incorporated |
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXFV202E5TA | Diodes Incorporated |
Description: IC AMPLIFIER VIDEO SGL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXCD1000EQ16TA | Diodes Incorporated |
Description: IC AMP CLASS D STEREO 1W 16QSOPPackaging: Tape & Reel (TR) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 70°C (TA) Voltage - Supply: 12V ~ 18V Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm Supplier Device Package: 16-QSOP-EP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
ZXSC100X8TA | Diodes Incorporated |
Description: IC REG CTRLR BOOST 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Boost Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V Supplier Device Package: 8-MSOP Synchronous Rectifier: No Output Phases: 1 Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXSC100N8TA | Diodes Incorporated |
Description: IC REG CTRLR BOOST 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Boost Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V Supplier Device Package: 8-SO Synchronous Rectifier: No Output Phases: 1 Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
ZXSC300E5TA | Diodes Incorporated |
Description: IC LED DRIVER CTRLR SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz Type: DC DC Controller Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: SOT-23-5 Voltage - Supply (Min): 0.8V Voltage - Supply (Max): 8V Part Status: Active |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXSC100-EVAL | Diodes Incorporated |
Description: EVAL BOARD FOR ZXSC100Voltage - Output: 3.3V Voltage - Input: 0.93V ~ 3.5V Current - Output: 100mA Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: ZXSC100 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up Outputs and Type: 1, Non-Isolated Part Status: Obsolete Power - Output: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
ZXCT1009FTA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.5V ~ 20V Current - Output: 9.98mA Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXM66P02N8TA | Diodes Incorporated |
Description: MOSFET P-CH 20V 6.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXMD65P02N8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXM66P03N8TA | Diodes Incorporated |
Description: MOSFET P-CH 30V 6.25A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
FMMT620TA | Diodes Incorporated |
Description: TRANS NPN 80V 1.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FCX658ATA | Diodes Incorporated |
Description: TRANS NPN 400V 0.5A SOT-89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1 W |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZVN4525GTA | Diodes Incorporated |
Description: MOSFET N-CH 250V 310MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 347000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZVN4525ZTA | Diodes Incorporated |
Description: MOSFET N-CH 250V 240MA SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZVN4525E6TA | Diodes Incorporated |
Description: MOSFET N-CH 250V 230MA SOT-23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZVP4525GTA | Diodes Incorporated |
Description: MOSFET P-CH 250V 265MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZVP4525ZTA | Diodes Incorporated |
Description: MOSFET P-CH 250V 205MA SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 205mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN2A04DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.9A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN2A02X8TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A 8-MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXMN2A03E6TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.7A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXMN2A01FTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.9A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V |
на замовлення 445500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN3B04N8TA | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.2A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN3A04DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.81W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 23500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN3A06DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 4.9A 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN3A03E6TA | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.7A SOT-23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXMN3A01FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.8A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
на замовлення 507000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN6A09DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 4.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN6A08E6TA | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN6A11DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
ZXMN6A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V |
на замовлення 325000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN6A07ZTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.9A SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXMN6A07FTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.2A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN10A08E6TA | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.5A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V |
на замовлення 141000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXMN10A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.7A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN10A07ZTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 1A SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXMN10A07FTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V |
на замовлення 2088000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZHCS2000TA | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 25V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOT-26 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
на замовлення 1230000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXTD4591E6TA | Diodes Incorporated |
Description: TRANS NPN/PNP 60V 1A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-6 Part Status: Active |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXTD09N50DE6TA | Diodes Incorporated |
Description: TRANS 2NPN DUAL 50V 1A SOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 Part Status: Active |
на замовлення 330000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXFV201N14TA | Diodes Incorporated |
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXFV202E5TA | Diodes Incorporated |
Description: IC AMPLIFIER VIDEO SGL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXFBF08W20TC | Diodes Incorporated |
Description: IC OPAMP BUFFER 100MHZ 20SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXCD1000EQ16TA | Diodes Incorporated |
Description: IC AMP CLASS D STEREO 1W 16QSOPPackaging: Cut Tape (CT) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 70°C (TA) Voltage - Supply: 12V ~ 18V Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm Supplier Device Package: 16-QSOP-EP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
ZXSC300E5TA | Diodes Incorporated |
Description: IC LED DRIVER CTRLR SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz Type: DC DC Controller Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: SOT-23-5 Voltage - Supply (Min): 0.8V Voltage - Supply (Max): 8V Part Status: Active |
на замовлення 35639 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZXCT1009FTA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.5V ~ 20V Current - Output: 9.98mA Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 Part Status: Active |
на замовлення 20718 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXM66P02N8TA | Diodes Incorporated |
Description: MOSFET P-CH 20V 6.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXMD65P02N8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXM66P03N8TA | Diodes Incorporated |
Description: MOSFET P-CH 30V 6.25A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXMD65P03N8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 3.8A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
FMMT620TA | Diodes Incorporated |
Description: TRANS NPN 80V 1.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
на замовлення 127344 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FCX658ATA | Diodes Incorporated |
Description: TRANS NPN 400V 0.5A SOT-89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1 W |
на замовлення 46145 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZVN4525GTA | Diodes Incorporated |
Description: MOSFET N-CH 250V 310MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 347120 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZVN4525ZTA | Diodes Incorporated |
Description: MOSFET N-CH 250V 240MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 7098 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZVN4525E6TA | Diodes Incorporated |
Description: MOSFET N-CH 250V 230MA SOT-23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V |
на замовлення 176208 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ZVP4525GTA | Diodes Incorporated |
Description: MOSFET P-CH 250V 265MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
на замовлення 855 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZVP4525ZTA | Diodes Incorporated |
Description: MOSFET P-CH 250V 205MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 205mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
на замовлення 35609 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN2A04DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.9A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 12579 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZXMN2A02X8TA | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A 8-MSOP |
товару немає в наявності |
В кошику од. на суму грн. |
| ZVN4206AVSTOA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ZXFV201N14TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| ZXFV202E5TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMPLIFIER VIDEO SGL SOT23-5
Description: IC AMPLIFIER VIDEO SGL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| ZXCD1000EQ16TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
товару немає в наявності
В кошику
од. на суму грн.
| ZXSC100X8TA |
![]() |
Виробник: Diodes Incorporated
Description: IC REG CTRLR BOOST 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BOOST 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товару немає в наявності
В кошику
од. на суму грн.
| ZXSC100N8TA |
![]() |
Виробник: Diodes Incorporated
Description: IC REG CTRLR BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-SO
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Boost
Voltage - Supply (Vcc/Vdd): 0.98V ~ 3.5V
Supplier Device Package: 8-SO
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товару немає в наявності
В кошику
од. на суму грн.
| ZXSC300E5TA |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.28 грн |
| ZXSC100-EVAL |
![]() |
Виробник: Diodes Incorporated
Description: EVAL BOARD FOR ZXSC100
Voltage - Output: 3.3V
Voltage - Input: 0.93V ~ 3.5V
Current - Output: 100mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: ZXSC100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 330 mW
Description: EVAL BOARD FOR ZXSC100
Voltage - Output: 3.3V
Voltage - Input: 0.93V ~ 3.5V
Current - Output: 100mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: ZXSC100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| ZXCT1009FTA |
![]() |
Виробник: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 32.82 грн |
| 6000+ | 30.86 грн |
| 9000+ | 30.49 грн |
| 15000+ | 28.23 грн |
| ZXM66P02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMD65P02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Description: MOSFET 2P-CH 20V 4A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| ZXM66P03N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FMMT620TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.26 грн |
| 6000+ | 12.61 грн |
| 9000+ | 12.04 грн |
| 15000+ | 10.70 грн |
| 21000+ | 10.34 грн |
| 30000+ | 10.12 грн |
| FCX658ATA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 18.72 грн |
| 2000+ | 16.40 грн |
| 3000+ | 15.57 грн |
| 5000+ | 13.74 грн |
| 7000+ | 13.22 грн |
| 10000+ | 12.72 грн |
| 25000+ | 11.60 грн |
| ZVN4525GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 347000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 26.83 грн |
| 2000+ | 23.90 грн |
| 3000+ | 22.96 грн |
| 5000+ | 21.08 грн |
| 7000+ | 19.52 грн |
| 10000+ | 19.24 грн |
| ZVN4525ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 28.38 грн |
| 2000+ | 24.87 грн |
| 3000+ | 23.52 грн |
| 5000+ | 21.64 грн |
| 7000+ | 20.88 грн |
| ZVN4525E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.74 грн |
| 6000+ | 21.79 грн |
| 9000+ | 21.24 грн |
| ZVP4525GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ZVP4525ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 30.25 грн |
| 2000+ | 26.69 грн |
| 3000+ | 25.44 грн |
| 5000+ | 22.57 грн |
| 7000+ | 21.79 грн |
| 10000+ | 21.47 грн |
| ZXMN2A04DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 83.52 грн |
| 1000+ | 68.24 грн |
| 2500+ | 64.82 грн |
| 5000+ | 58.55 грн |
| ZXMN2A02X8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Description: MOSFET N-CH 20V 6.2A 8-MSOP
товару немає в наявності
В кошику
од. на суму грн.
| ZXMN2A03E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.09 грн |
| 6000+ | 21.97 грн |
| 9000+ | 20.35 грн |
| ZXMN2A01FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
Description: MOSFET N-CH 20V 1.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
на замовлення 445500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.51 грн |
| 6000+ | 8.87 грн |
| 9000+ | 8.66 грн |
| 15000+ | 7.96 грн |
| 21000+ | 7.20 грн |
| 30000+ | 6.94 грн |
| 75000+ | 6.75 грн |
| ZXMN3B04N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 47.28 грн |
| 1000+ | 37.09 грн |
| 2500+ | 34.92 грн |
| ZXMN3A04DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 23500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 55.58 грн |
| 1000+ | 51.16 грн |
| ZXMN3A06DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 54.13 грн |
| ZXMN3A03E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 30V 3.7A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.58 грн |
| 6000+ | 21.02 грн |
| 9000+ | 20.75 грн |
| 15000+ | 19.19 грн |
| ZXMN3A01FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Description: MOSFET N-CH 30V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
на замовлення 507000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.36 грн |
| 6000+ | 9.14 грн |
| 9000+ | 8.91 грн |
| ZXMN6A09DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 73.31 грн |
| 1000+ | 65.10 грн |
| 1500+ | 62.29 грн |
| 2500+ | 56.14 грн |
| ZXMN6A08E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.93 грн |
| ZXMN6A11DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| ZXMN6A11GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
на замовлення 325000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 22.20 грн |
| 2000+ | 19.70 грн |
| 3000+ | 18.83 грн |
| 5000+ | 16.76 грн |
| 7000+ | 16.62 грн |
| ZXMN6A07ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1.9A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Description: MOSFET N-CH 60V 1.9A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 17.98 грн |
| 2000+ | 15.31 грн |
| 3000+ | 14.79 грн |
| 5000+ | 13.67 грн |
| 7000+ | 13.15 грн |
| ZXMN6A07FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.58 грн |
| 6000+ | 10.43 грн |
| 9000+ | 9.98 грн |
| 15000+ | 9.18 грн |
| 21000+ | 8.99 грн |
| ZXMN10A08E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
на замовлення 141000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.63 грн |
| 6000+ | 13.53 грн |
| 9000+ | 13.10 грн |
| 15000+ | 11.99 грн |
| ZXMN10A11GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
Description: MOSFET N-CH 100V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 22.82 грн |
| 2000+ | 20.26 грн |
| 3000+ | 19.37 грн |
| 5000+ | 17.24 грн |
| 7000+ | 17.18 грн |
| ZXMN10A07ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Description: MOSFET N-CH 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 13.27 грн |
| 2000+ | 12.07 грн |
| 3000+ | 11.88 грн |
| ZXMN10A07FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
на замовлення 2088000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.59 грн |
| 6000+ | 9.57 грн |
| 9000+ | 8.95 грн |
| 15000+ | 8.13 грн |
| 21000+ | 7.94 грн |
| ZHCS2000TA |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOT-26
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 40V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 25V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOT-26
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
на замовлення 1230000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.95 грн |
| 6000+ | 15.82 грн |
| 9000+ | 15.60 грн |
| ZXTD4591E6TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V 1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-6
Part Status: Active
Description: TRANS NPN/PNP 60V 1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.67 грн |
| 6000+ | 16.60 грн |
| 9000+ | 15.89 грн |
| 15000+ | 14.17 грн |
| 21000+ | 14.01 грн |
| ZXTD09N50DE6TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active
на замовлення 330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.45 грн |
| 6000+ | 28.16 грн |
| 9000+ | 27.28 грн |
| ZXFV201N14TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
Description: IC AMPLIFIER VIDEO QUAD 14-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| ZXFV202E5TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMPLIFIER VIDEO SGL SOT23-5
Description: IC AMPLIFIER VIDEO SGL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| ZXFBF08W20TC |
![]() |
Виробник: Diodes Incorporated
Description: IC OPAMP BUFFER 100MHZ 20SOIC
Description: IC OPAMP BUFFER 100MHZ 20SOIC
товару немає в наявності
В кошику
од. на суму грн.
| ZXCD1000EQ16TA |
![]() |
Виробник: Diodes Incorporated
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
Description: IC AMP CLASS D STEREO 1W 16QSOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 12V ~ 18V
Max Output Power x Channels @ Load: 1W x 2 @ 8Ohm
Supplier Device Package: 16-QSOP-EP
товару немає в наявності
В кошику
од. на суму грн.
| ZXSC300E5TA |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
Description: IC LED DRIVER CTRLR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 0.8V
Voltage - Supply (Max): 8V
Part Status: Active
на замовлення 35639 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.20 грн |
| 10+ | 40.77 грн |
| 25+ | 36.67 грн |
| 100+ | 30.23 грн |
| 250+ | 28.23 грн |
| 500+ | 27.03 грн |
| 1000+ | 25.61 грн |
| ZXCT1009FTA |
![]() |
Виробник: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Part Status: Active
на замовлення 20718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.06 грн |
| 10+ | 48.22 грн |
| 25+ | 43.48 грн |
| 100+ | 35.95 грн |
| 250+ | 33.62 грн |
| 500+ | 32.23 грн |
| 1000+ | 30.57 грн |
| ZXM66P02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Description: MOSFET P-CH 20V 6.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMD65P02N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Description: MOSFET 2P-CH 20V 4A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| ZXM66P03N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
Description: MOSFET P-CH 30V 6.25A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.25A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMD65P03N8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| FMMT620TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS NPN 80V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
на замовлення 127344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.02 грн |
| 10+ | 35.71 грн |
| 100+ | 23.13 грн |
| 500+ | 16.61 грн |
| 1000+ | 14.97 грн |
| FCX658ATA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Description: TRANS NPN 400V 0.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
на замовлення 46145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.60 грн |
| 10+ | 39.90 грн |
| 100+ | 25.96 грн |
| 500+ | 18.74 грн |
| ZVN4525GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 310MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 347120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.75 грн |
| 10+ | 57.08 грн |
| 100+ | 37.93 грн |
| 500+ | 27.77 грн |
| ZVN4525ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 240MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 7098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.66 грн |
| 10+ | 59.77 грн |
| 100+ | 39.50 грн |
| 500+ | 28.89 грн |
| ZVN4525E6TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Description: MOSFET N-CH 250V 230MA SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
на замовлення 176208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.28 грн |
| 10+ | 49.40 грн |
| 100+ | 37.54 грн |
| 500+ | 28.58 грн |
| 1000+ | 25.64 грн |
| ZVP4525GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 250V 265MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.57 грн |
| 10+ | 34.28 грн |
| 100+ | 30.70 грн |
| 500+ | 22.30 грн |
| ZVP4525ZTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 250V 205MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 205mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
на замовлення 35609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.95 грн |
| 10+ | 62.07 грн |
| 100+ | 41.06 грн |
| 500+ | 30.07 грн |
| ZXMN2A04DN8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12579 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.63 грн |
| 10+ | 119.39 грн |
| 100+ | 95.04 грн |
| ZXMN2A02X8TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Description: MOSFET N-CH 20V 6.2A 8-MSOP
товару немає в наявності
В кошику
од. на суму грн.
,TO-226_straightlead.jpg)











