Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71659) > Сторінка 700 з 1195
| Фото | Назва | Виробник | Інформація |
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FK5000055Q | Diodes Incorporated |
Description: XTAL OSC XO 50.0000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Ratings: AEC-Q200 Current - Supply (Max): 8mA Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 50 MHz Base Resonator: Crystal |
товару немає в наявності |
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FK5000055Q | Diodes Incorporated |
Description: XTAL OSC XO 50.0000MHZ CMOS SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Ratings: AEC-Q200 Current - Supply (Max): 8mA Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 50 MHz Base Resonator: Crystal |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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| ADTC143ZLP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC114YLP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC144ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| ADTA144ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC114ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC143ZLP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC144ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| ADTA144ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC114ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADTC114YLP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DGD44175WU-7 | Diodes Incorporated |
Description: HV GATE DRIVER TSOT26 T&R 3KPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 13.2V ~ 20V Input Type: Non-Inverting Supplier Device Package: TSOT-26 Rise / Fall Time (Typ): 10ns, 9ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3.2A, 2.6A |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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DGD44175WU-7 | Diodes Incorporated |
Description: HV GATE DRIVER TSOT26 T&R 3KPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 13.2V ~ 20V Input Type: Non-Inverting Supplier Device Package: TSOT-26 Rise / Fall Time (Typ): 10ns, 9ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3.2A, 2.6A |
на замовлення 26965 шт: термін постачання 21-31 дні (днів) |
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AH1902-Z-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: Hall Effect Sensing Range: ±4.8mT Trip, ±3.8mT Release Current - Output (Max): 3mA Current - Supply (Max): 8µA Supplier Device Package: SOT-553 Test Condition: -40°C ~ 85°C |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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AH1902-Z-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: Hall Effect Sensing Range: ±4.8mT Trip, ±3.8mT Release Current - Output (Max): 3mA Current - Supply (Max): 8µA Supplier Device Package: SOT-553 Test Condition: -40°C ~ 85°C |
на замовлення 19197 шт: термін постачання 21-31 дні (днів) |
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74LVC1G34Z-7 | Diodes Incorporated |
Description: IC BUFF NON-INVERT 5.5V SOT-553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SOT-553 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G34Z-7 | Diodes Incorporated |
Description: IC BUFF NON-INVERT 5.5V SOT-553Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SOT-553 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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AH3360-Z-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH UNIPOLAR SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Push-Pull Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: Hall Effect Sensing Range: 4.6mT Trip, 0.9mT Release Current - Output (Max): 3mA Current - Supply (Max): 8µA Supplier Device Package: SOT-553 Test Condition: -40°C ~ 85°C |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AH3360-Z-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH UNIPOLAR SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Push-Pull Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: Hall Effect Sensing Range: 4.6mT Trip, 0.9mT Release Current - Output (Max): 3mA Current - Supply (Max): 8µA Supplier Device Package: SOT-553 Test Condition: -40°C ~ 85°C |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| PI3EQX7502AIZDE+DAX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 2CH 24TQFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Delay Time: 305ps Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Current - Supply: 125mA Data Rate (Max): 5Gbps Supplier Device Package: 24-TQFN (4x4) Signal Conditioning: Input Equalization, Output De-Emphasis |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| PI3EQX7502AIZDE+DAX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 2CH 24TQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Delay Time: 305ps Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Current - Supply: 125mA Data Rate (Max): 5Gbps Supplier Device Package: 24-TQFN (4x4) Signal Conditioning: Input Equalization, Output De-Emphasis |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| 1N4448W | Diodes Incorporated |
Description: DIODE STANDARD 75V 250MA SOD123Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBJ2010 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 20A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2100UQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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BAS40WQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 200MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 30 V Qualification: AEC-Q101 |
на замовлення 24790 шт: термін постачання 21-31 дні (днів) |
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| BC817-16FHW-7 | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR U-DFNPackaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: U-DFN1110-3 (SWP) (Type A) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSP75NQ-13 | Diodes Incorporated |
Description: LOW SIDE INTELLIFET SOT223 T&R 4 Packaging: Cut Tape (CT) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 385mOhm Input Type: Non-Inverting Voltage - Load: 60V Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2338 шт: термін постачання 21-31 дні (днів) |
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| BSP75N-13 | Diodes Incorporated |
Description: LOW SIDE INTELLIFET SOT223 T&R 4 Packaging: Cut Tape (CT) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 385mOhm Input Type: Non-Inverting Voltage - Load: 60V Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FH2400020 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (2.5x2) Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FH2400024 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (2.5x2) Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FH2400029 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 7PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 7pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (2.5x2) Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FY2400021 | Diodes Incorporated |
Description: CRYSTAL SURFACE MOUNTPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Mode: Fundamental Supplier Device Package: 4-SMD (5x3.2) Height - Seated (Max): 0.043" (1.10mm) |
товару немає в наявності |
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FW2400023 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 10PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±15ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (2x1.6) Height - Seated (Max): 0.022" (0.55mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMJ70H1D5SV3 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 700V 5A TO251Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (Type TH3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 316 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DXTP06080BFGQ-7 | Diodes Incorporated |
Description: TRANS PNP 80V 1A POWERDI3Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.07 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DXTP06080BFGQ-7 | Diodes Incorporated |
Description: TRANS PNP 80V 1A POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.07 W Qualification: AEC-Q101 |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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ZXCT1009QFTA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.5V ~ 20V Current - Output: 9.98mA Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZXCT1009QFTA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.5V ~ 20V Current - Output: 9.98mA Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 |
на замовлення 5869 шт: термін постачання 21-31 дні (днів) |
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MBRB10150CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOT 150V 5A TO-263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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MBRB10150CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOT 150V 5A TO-263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN3032LFDBQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN3032LFDBQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.2A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9450 шт: термін постачання 21-31 дні (днів) |
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DMP3027LFDF-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||||
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DMP3027LFDF-7 | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V |
на замовлення 1844 шт: термін постачання 21-31 дні (днів) |
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DUP3105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 32VWM 66VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 32V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 35.6V Voltage - Clamping (Max) @ Ipp: 66V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DUP3105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 32VWM 66VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 32V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 35.6V Voltage - Clamping (Max) @ Ipp: 66V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1004 шт: термін постачання 21-31 дні (днів) |
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1.5KE300A-B | Diodes Incorporated |
Description: TVS DIODE 256VWM 414VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 256V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 285V Voltage - Clamping (Max) @ Ipp: 414V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP6110SVTQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP6110SVTQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 9109 шт: термін постачання 21-31 дні (днів) |
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1N5408-T | Diodes Incorporated |
Description: DIODE STANDARD 1000V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DCX123JUQ-7-F | Diodes Incorporated |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDC114YUQ-13-F | Diodes Incorporated |
Description: TRANS PREBIAS 2NPN 50V SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DCX114YUQ-13R-F | Diodes Incorporated |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDC114YUQ-7-F | Diodes Incorporated |
Description: TRANS PREBIAS 2NPN 50V SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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DCX114YUQ-13-F | Diodes Incorporated |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ABS210-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 4920 шт: термін постачання 21-30 дні (днів) |
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MB10F-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 17257 шт: термін постачання 21-30 дні (днів) |
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MB10S-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 13752 шт: термін постачання 21-30 дні (днів) |
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HD01-T | Diodes Incorporated |
Bridge Rectifiers 0.8A 100V |
на замовлення 9802 шт: термін постачання 21-30 дні (днів) |
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| FK5000055Q |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| FK5000055Q |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 105.89 грн |
| 10+ | 88.45 грн |
| 25+ | 83.66 грн |
| 50+ | 75.25 грн |
| 100+ | 72.14 грн |
| 250+ | 68.22 грн |
| 500+ | 64.33 грн |
| ADTC143ZLP4WQ-7B |
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Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC114YLP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC144ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.82 грн |
| 20000+ | 2.46 грн |
| ADTA144ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC114ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC143ZLP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC144ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.39 грн |
| 6000+ | 2.93 грн |
| 9000+ | 2.76 грн |
| 15000+ | 2.41 грн |
| ADTA144ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC114ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC114YLP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DGD44175WU-7 |
![]() |
Виробник: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.44 грн |
| 6000+ | 21.06 грн |
| 9000+ | 20.79 грн |
| 15000+ | 19.23 грн |
| 21000+ | 19.07 грн |
| DGD44175WU-7 |
![]() |
Виробник: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
на замовлення 26965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.42 грн |
| 10+ | 33.69 грн |
| 25+ | 30.24 грн |
| 100+ | 24.86 грн |
| 250+ | 23.17 грн |
| 500+ | 22.15 грн |
| 1000+ | 20.96 грн |
| AH1902-Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.32 грн |
| 6000+ | 20.71 грн |
| 9000+ | 20.29 грн |
| 15000+ | 18.56 грн |
| AH1902-Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
на замовлення 19197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.22 грн |
| 10+ | 31.35 грн |
| 25+ | 27.42 грн |
| 50+ | 26.09 грн |
| 100+ | 24.85 грн |
| 500+ | 22.02 грн |
| 1000+ | 21.12 грн |
| 74LVC1G34Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.44 грн |
| 8000+ | 5.09 грн |
| 12000+ | 5.01 грн |
| 20000+ | 4.62 грн |
| 28000+ | 4.57 грн |
| 40000+ | 4.53 грн |
| 74LVC1G34Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.12 грн |
| 34+ | 9.14 грн |
| 38+ | 8.04 грн |
| 100+ | 6.42 грн |
| 250+ | 5.89 грн |
| 500+ | 5.58 грн |
| 1000+ | 5.23 грн |
| AH3360-Z-7 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.83 грн |
| 6000+ | 18.39 грн |
| AH3360-Z-7 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.30 грн |
| 11+ | 28.02 грн |
| 25+ | 24.47 грн |
| 50+ | 23.25 грн |
| 100+ | 22.14 грн |
| 500+ | 19.59 грн |
| 1000+ | 18.78 грн |
| PI3EQX7502AIZDE+DAX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 61.40 грн |
| 7000+ | 57.94 грн |
| 10500+ | 57.35 грн |
| PI3EQX7502AIZDE+DAX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.15 грн |
| 10+ | 87.09 грн |
| 25+ | 79.28 грн |
| 100+ | 66.27 грн |
| 250+ | 62.40 грн |
| 500+ | 60.06 грн |
| 1000+ | 58.93 грн |
| 1N4448W |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
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| GBJ2010 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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| DMP2100UQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.38 грн |
| 17+ | 18.58 грн |
| 100+ | 11.76 грн |
| 500+ | 8.25 грн |
| 1000+ | 7.35 грн |
| BAS40WQ-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
на замовлення 24790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.37 грн |
| 100+ | 8.35 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.13 грн |
| 2000+ | 4.57 грн |
| 5000+ | 3.90 грн |
| BC817-16FHW-7 |
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Виробник: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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| BSP75NQ-13 |
Виробник: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2338 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.95 грн |
| 10+ | 50.23 грн |
| 25+ | 45.41 грн |
| 100+ | 37.59 грн |
| 250+ | 35.19 грн |
| 500+ | 33.74 грн |
| 1000+ | 32.36 грн |
| BSP75N-13 |
Виробник: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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| FH2400020 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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| FH2400024 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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| FH2400029 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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| FY2400021 |
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Виробник: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (5x3.2)
Height - Seated (Max): 0.043" (1.10mm)
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (5x3.2)
Height - Seated (Max): 0.043" (1.10mm)
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| FW2400023 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2x1.6)
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2x1.6)
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 24 MHz
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| DMJ70H1D5SV3 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 700V 5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (Type TH3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 316 pF @ 50 V
Description: MOSFET N-CHANNEL 700V 5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (Type TH3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 316 pF @ 50 V
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| DXTP06080BFGQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
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| DXTP06080BFGQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.93 грн |
| 12+ | 26.29 грн |
| 100+ | 16.84 грн |
| 500+ | 11.95 грн |
| 1000+ | 10.70 грн |
| ZXCT1009QFTA |
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Виробник: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.92 грн |
| ZXCT1009QFTA |
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Виробник: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
на замовлення 5869 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.61 грн |
| 10+ | 41.32 грн |
| 25+ | 37.22 грн |
| 100+ | 30.71 грн |
| 250+ | 28.69 грн |
| 500+ | 27.47 грн |
| 1000+ | 26.11 грн |
| MBRB10150CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.69 грн |
| MBRB10150CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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| DMN3032LFDBQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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| DMN3032LFDBQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.48 грн |
| 10+ | 33.69 грн |
| 100+ | 21.75 грн |
| 500+ | 15.59 грн |
| 1000+ | 14.03 грн |
| 2000+ | 12.72 грн |
| 5000+ | 11.11 грн |
| DMP3027LFDF-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V
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| DMP3027LFDF-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V
на замовлення 1844 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.28 грн |
| 12+ | 27.19 грн |
| 100+ | 17.42 грн |
| 500+ | 12.38 грн |
| 1000+ | 11.10 грн |
| DUP3105SOQ-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| DUP3105SOQ-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.73 грн |
| 16+ | 19.87 грн |
| 100+ | 12.61 грн |
| 500+ | 8.86 грн |
| 1000+ | 7.90 грн |
| 1.5KE300A-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 256VWM 414VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 256VWM 414VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| DMP6110SVTQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| DMP6110SVTQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Qualification: AEC-Q101
на замовлення 9109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 78.44 грн |
| 10+ | 47.36 грн |
| 100+ | 31.05 грн |
| 500+ | 22.55 грн |
| 1000+ | 20.43 грн |
| 2000+ | 18.64 грн |
| 5000+ | 16.66 грн |
| 1N5408-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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В кошику
од. на суму грн.
| DCX123JUQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DDC114YUQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DCX114YUQ-13R-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DDC114YUQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.53 грн |
| 6000+ | 3.93 грн |
| 9000+ | 3.71 грн |
| 15000+ | 3.25 грн |
| 21000+ | 3.11 грн |
| 30000+ | 2.98 грн |
| DCX114YUQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ABS210-13 |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 4920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.60 грн |
| 16+ | 20.29 грн |
| 100+ | 11.23 грн |
| 500+ | 8.37 грн |
| 1000+ | 6.69 грн |
| MB10F-13 |
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Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 17257 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.21 грн |
| 14+ | 23.73 грн |
| 100+ | 13.25 грн |
| 500+ | 9.97 грн |
| 1000+ | 8.02 грн |
| 5000+ | 6.83 грн |
| 10000+ | 6.21 грн |
| MB10S-13 |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 13752 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.10 грн |
| 18+ | 18.36 грн |
| 100+ | 10.04 грн |
| 500+ | 7.39 грн |
| 1000+ | 6.62 грн |
| 3000+ | 5.44 грн |
| 6000+ | 4.95 грн |
| HD01-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 0.8A 100V
Bridge Rectifiers 0.8A 100V
на замовлення 9802 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.86 грн |
| 14+ | 24.38 грн |
| 100+ | 13.46 грн |
| 500+ | 10.04 грн |
| 1000+ | 8.92 грн |
| 3000+ | 7.11 грн |
| 6000+ | 6.62 грн |

















