Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73905) > Сторінка 699 з 1232
| Фото | Назва | Виробник | Інформація |
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DMWSH170H850HM4Q | Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.58A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMN3060L-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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DMN3060L-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V |
на замовлення 49990 шт: термін постачання 21-31 дні (днів) |
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DMN3060L-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMN3060L-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMN3060LW-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT323 T&RPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMN3060LVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 3.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 |
на замовлення 17925 шт: термін постачання 21-31 дні (днів) |
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DMN3060LQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3060LQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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1.5KE27A-B | Diodes Incorporated |
Description: TVS DIODE 23.1VWM 37.5VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5KE68CA-B | Diodes Incorporated |
Description: TVS DIODE 58.1VWM 92VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16.3A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
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BC856A-7-F-W | Diodes Incorporated |
Description: TRANS PNP 65V 0.1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856A-7-F-W | Diodes Incorporated |
Description: TRANS PNP 65V 0.1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G17FX4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G17FX4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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BSS84-7-F-W | Diodes Incorporated |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
товару немає в наявності |
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BSS84-7-F-W | Diodes Incorporated |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
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SMBJ13CAQ-13-F | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||||
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SMBJ13CAQ-13-F | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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G8327A049 | Diodes Incorporated |
Description: CRYSTAL PLASTIC SMD3215Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Load Capacitance: 7pF Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Operating Temperature: -40°C ~ 85°C Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 70 kOhms Frequency: 32.768 kHz |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G8327A039 | Diodes Incorporated |
Description: CRYSTAL PLASTIC SMD3215Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Load Capacitance: 7pF Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Operating Temperature: -40°C ~ 85°C Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 50 kOhms Frequency: 32.768 kHz |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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G8327A047 | Diodes Incorporated |
Description: CRYSTAL PLASTIC SMD3215Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Load Capacitance: 9pF Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Operating Temperature: -40°C ~ 85°C Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 70 kOhms Frequency: 32.768 kHz |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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G8327A048 | Diodes Incorporated |
Description: CRYSTAL PLASTIC SMD3215Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Load Capacitance: 7pF Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Operating Temperature: -40°C ~ 85°C Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 70 kOhms Frequency: 32.768 kHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MBRF10200CT | Diodes Incorporated |
Description: DIODE ARR SCHOT 200V 5A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
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DF06S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 1A DF-SPackaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 42265 шт: термін постачання 21-31 дні (днів) |
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| DTHP60B07PT | Diodes Incorporated |
Description: FRED PLANAR RECTIFIER TO247 TUBEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 1650 шт: термін постачання 21-31 дні (днів) |
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| DTHP60B07PTQ | Diodes Incorporated |
Description: FRED PLANAR RECTIFIER TO247 TUBEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMTH6012LPSWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 11.5/50.5A PWRDIPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 1030 шт: термін постачання 21-31 дні (днів) |
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DMTH6015LPDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 9.4A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 39.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMTH6015LPDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 9.4A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 39.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 628 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPSWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 15.5A/80A PWRDIPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 169637 шт: термін постачання 21-31 дні (днів) |
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DMTH6016LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.8 TO252 T&RPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 372500 шт: термін постачання 21-31 дні (днів) |
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DMTH6016LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.8 TO252 T&RPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 374980 шт: термін постачання 21-31 дні (днів) |
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ABS210-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 30730 шт: термін постачання 21-30 дні (днів) |
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MB10F-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 16711 шт: термін постачання 21-30 дні (днів) |
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MB10S-13 | Diodes Incorporated |
Bridge Rectifiers Bridge Rectifier |
на замовлення 12899 шт: термін постачання 21-30 дні (днів) |
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HD01-T | Diodes Incorporated |
Bridge Rectifiers 0.8A 100V |
на замовлення 8465 шт: термін постачання 21-30 дні (днів) |
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HD04-T | Diodes Incorporated |
Bridge Rectifiers 400V 0.8A |
на замовлення 10536 шт: термін постачання 21-30 дні (днів) |
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HD06-T | Diodes Incorporated |
Bridge Rectifiers 600V 0.8A |
на замовлення 31683 шт: термін постачання 21-30 дні (днів) |
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df06m | Diodes Incorporated |
Bridge Rectifiers 1.0A 600V |
на замовлення 5617 шт: термін постачання 21-30 дні (днів) |
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DF04S-T | Diodes Incorporated |
Bridge Rectifiers 400V 1A |
на замовлення 29959 шт: термін постачання 21-30 дні (днів) |
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DLPA006-7 | Diodes Incorporated |
Bridge Rectifiers 85V 160mA 200mW |
на замовлення 3491 шт: термін постачання 21-30 дні (днів) |
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GBJ1010-F | Diodes Incorporated |
Bridge Rectifiers 1000V 10A |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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DF06S-T | Diodes Incorporated |
Bridge Rectifiers 1A 600Vrrm 50Ifsm |
на замовлення 17798 шт: термін постачання 21-30 дні (днів) |
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HD02-T | Diodes Incorporated |
Bridge Rectifiers 200V 0.8A |
на замовлення 5523 шт: термін постачання 21-30 дні (днів) |
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DF04M | Diodes Incorporated |
Bridge Rectifiers 400V 1A |
на замовлення 12840 шт: термін постачання 21-30 дні (днів) |
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DF1501S-T | Diodes Incorporated |
Bridge Rectifiers 100V 1.5A |
на замовлення 8365 шт: термін постачання 21-30 дні (днів) |
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GBU806 | Diodes Incorporated |
Bridge Rectifiers 8.0A 600V |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
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GBU810 | Diodes Incorporated |
Bridge Rectifiers 1000V 8A |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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RH06-T | Diodes Incorporated |
Bridge Rectifiers 0.5A 600V |
на замовлення 20653 шт: термін постачання 21-30 дні (днів) |
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DF1504S-T | Diodes Incorporated |
Bridge Rectifiers 400V 1.5A |
на замовлення 4970 шт: термін постачання 21-30 дні (днів) |
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| DSRHD10-13 | Diodes Incorporated |
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RH04-T | Diodes Incorporated |
Bridge Rectifiers 0.5A 400V |
на замовлення 4693 шт: термін постачання 21-30 дні (днів) |
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DF15005S-T | Diodes Incorporated |
Bridge Rectifiers 1.5A 50V |
на замовлення 3050 шт: термін постачання 21-30 дні (днів) |
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| DSRHD08-13 | Diodes Incorporated |
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF01M | Diodes Incorporated |
Bridge Rectifiers 100V 1A |
на замовлення 4120 шт: термін постачання 21-30 дні (днів) |
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DF10S-T | Diodes Incorporated |
Bridge Rectifiers 1A 1000Vrrm 50Ifsm |
на замовлення 18051 шт: термін постачання 21-30 дні (днів) |
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DF1506S-T | Diodes Incorporated |
Bridge Rectifiers 1.5A 600V |
на замовлення 2527 шт: термін постачання 21-30 дні (днів) |
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KBJ406G | Diodes Incorporated |
Bridge Rectifiers 4.0A 600V |
на замовлення 169 шт: термін постачання 21-30 дні (днів) |
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DF1510S | Diodes Incorporated |
Bridge Rectifiers 1.5A 1000V |
на замовлення 514 шт: термін постачання 21-30 дні (днів) |
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| DMWSH170H850HM4Q |
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Виробник: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.58A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V
Qualification: AEC-Q101
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.58A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMN3060L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.63 грн |
| 20000+ | 3.19 грн |
| 30000+ | 3.03 грн |
| DMN3060L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
на замовлення 49990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.29 грн |
| 26+ | 12.63 грн |
| 100+ | 7.92 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.85 грн |
| 2000+ | 4.32 грн |
| 5000+ | 3.68 грн |
| DMN3060L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.35 грн |
| DMN3060L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.29 грн |
| 26+ | 12.63 грн |
| 100+ | 7.92 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.85 грн |
| DMN3060LW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.40 грн |
| 22+ | 15.17 грн |
| 100+ | 9.50 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| DMN3060LVT-7 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
на замовлення 17925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 13+ | 26.49 грн |
| 100+ | 16.95 грн |
| 500+ | 12.03 грн |
| 1000+ | 10.78 грн |
| DMN3060LQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
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| DMN3060LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.02 грн |
| 6000+ | 4.36 грн |
| 9000+ | 4.12 грн |
| 15000+ | 3.61 грн |
| 21000+ | 3.46 грн |
| 30000+ | 3.31 грн |
| 1.5KE27A-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 23.1VWM 37.5VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 23.1VWM 37.5VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1.5KE68CA-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| BC856A-7-F-W |
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Виробник: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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| BC856A-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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| 74LVC1G17FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.60 грн |
| 10000+ | 7.12 грн |
| 15000+ | 7.02 грн |
| 25000+ | 6.49 грн |
| 35000+ | 6.43 грн |
| 50000+ | 6.37 грн |
| 74LVC1G17FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.74 грн |
| 26+ | 12.63 грн |
| 30+ | 11.12 грн |
| 100+ | 8.96 грн |
| 250+ | 8.24 грн |
| 500+ | 7.82 грн |
| 1000+ | 7.34 грн |
| 2500+ | 7.18 грн |
| BSS84-7-F-W |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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| BSS84-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.81 грн |
| 89+ | 3.69 грн |
| 103+ | 3.21 грн |
| 123+ | 2.51 грн |
| 250+ | 2.27 грн |
| 500+ | 2.13 грн |
| 1000+ | 1.98 грн |
| SMBJ13CAQ-13-F |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMBJ13CAQ-13-F |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| G8327A049 |
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Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 12+ | 29.77 грн |
| 25+ | 28.14 грн |
| 50+ | 25.32 грн |
| 100+ | 24.28 грн |
| 250+ | 22.96 грн |
| 500+ | 21.65 грн |
| 1000+ | 20.75 грн |
| G8327A039 |
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Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 12+ | 29.77 грн |
| 25+ | 28.14 грн |
| 50+ | 25.32 грн |
| 100+ | 24.28 грн |
| 250+ | 22.96 грн |
| 500+ | 21.65 грн |
| 1000+ | 20.75 грн |
| G8327A047 |
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Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 12+ | 29.77 грн |
| 25+ | 28.14 грн |
| 50+ | 25.32 грн |
| 100+ | 24.28 грн |
| 250+ | 22.96 грн |
| 500+ | 21.65 грн |
| 1000+ | 20.75 грн |
| G8327A048 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.69 грн |
| 10+ | 39.85 грн |
| 25+ | 37.69 грн |
| 50+ | 33.91 грн |
| 100+ | 32.51 грн |
| 250+ | 30.74 грн |
| 500+ | 28.99 грн |
| 1000+ | 27.79 грн |
| MBRF10200CT |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DF06S |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 42265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.11 грн |
| 50+ | 51.98 грн |
| 100+ | 46.36 грн |
| 500+ | 34.23 грн |
| 1000+ | 31.25 грн |
| 2000+ | 28.74 грн |
| 5000+ | 25.60 грн |
| 10000+ | 25.28 грн |
| DTHP60B07PT |
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Виробник: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 122.46 грн |
| DTHP60B07PTQ |
![]() |
Виробник: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH6012LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.90 грн |
| 10+ | 48.96 грн |
| 100+ | 32.12 грн |
| 500+ | 23.35 грн |
| 1000+ | 21.16 грн |
| DMTH6015LPDWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH6015LPDWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.26 грн |
| 10+ | 60.22 грн |
| 100+ | 39.89 грн |
| 500+ | 29.24 грн |
| DMTH6010LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
на замовлення 169637 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.03 грн |
| 10+ | 63.83 грн |
| 100+ | 42.40 грн |
| 500+ | 31.16 грн |
| 1000+ | 28.38 грн |
| DMTH6016LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 372500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.42 грн |
| 5000+ | 19.04 грн |
| 7500+ | 18.23 грн |
| 12500+ | 16.58 грн |
| DMTH6016LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 374980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.16 грн |
| 10+ | 51.66 грн |
| 100+ | 33.98 грн |
| 500+ | 24.75 грн |
| 1000+ | 22.45 грн |
| ABS210-13 |
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Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 30730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.93 грн |
| 16+ | 22.91 грн |
| 100+ | 12.67 грн |
| 500+ | 9.45 грн |
| 1000+ | 7.56 грн |
| 5000+ | 5.83 грн |
| 10000+ | 5.59 грн |
| MB10F-13 |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 16711 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 44.27 грн |
| 14+ | 26.80 грн |
| 100+ | 14.96 грн |
| 500+ | 11.26 грн |
| 1000+ | 9.05 грн |
| 5000+ | 7.72 грн |
| 10000+ | 7.01 грн |
| MB10S-13 |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
Bridge Rectifiers Bridge Rectifier
на замовлення 12899 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.98 грн |
| 18+ | 20.73 грн |
| 100+ | 11.34 грн |
| 500+ | 8.34 грн |
| 1000+ | 7.48 грн |
| 3000+ | 6.14 грн |
| 6000+ | 5.59 грн |
| HD01-T |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 0.8A 100V
Bridge Rectifiers 0.8A 100V
на замовлення 8465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 45.00 грн |
| 14+ | 27.52 грн |
| 100+ | 15.19 грн |
| 500+ | 11.34 грн |
| 1000+ | 9.92 грн |
| 3000+ | 8.03 грн |
| 6000+ | 7.48 грн |
| HD04-T |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 400V 0.8A
Bridge Rectifiers 400V 0.8A
на замовлення 10536 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 29.21 грн |
| 14+ | 26.80 грн |
| 100+ | 15.19 грн |
| 500+ | 11.49 грн |
| 1000+ | 10.31 грн |
| 3000+ | 7.40 грн |
| 6000+ | 7.16 грн |
| HD06-T |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 600V 0.8A
Bridge Rectifiers 600V 0.8A
на замовлення 31683 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.08 грн |
| 12+ | 31.69 грн |
| 100+ | 17.63 грн |
| 500+ | 13.15 грн |
| 1000+ | 11.57 грн |
| 3000+ | 8.90 грн |
| df06m |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 1.0A 600V
Bridge Rectifiers 1.0A 600V
на замовлення 5617 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 45.00 грн |
| 20+ | 19.01 грн |
| 100+ | 15.35 грн |
| 500+ | 11.49 грн |
| 1000+ | 9.68 грн |
| 5000+ | 8.82 грн |
| 10000+ | 8.50 грн |
| DF04S-T |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 400V 1A
Bridge Rectifiers 400V 1A
на замовлення 29959 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.17 грн |
| 12+ | 31.69 грн |
| 100+ | 17.63 грн |
| 500+ | 13.38 грн |
| 1000+ | 13.23 грн |
| 1500+ | 9.05 грн |
| DLPA006-7 |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 85V 160mA 200mW
Bridge Rectifiers 85V 160mA 200mW
на замовлення 3491 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 29.21 грн |
| 16+ | 22.72 грн |
| 100+ | 15.35 грн |
| 500+ | 14.96 грн |
| 1000+ | 14.88 грн |
| 3000+ | 14.09 грн |
| GBJ1010-F |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1000V 10A
Bridge Rectifiers 1000V 10A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.74 грн |
| 10+ | 122.22 грн |
| 105+ | 73.14 грн |
| 510+ | 70.38 грн |
| DF06S-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1A 600Vrrm 50Ifsm
Bridge Rectifiers 1A 600Vrrm 50Ifsm
на замовлення 17798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.73 грн |
| 12+ | 32.68 грн |
| 100+ | 18.26 грн |
| 500+ | 13.86 грн |
| 1000+ | 13.78 грн |
| 1500+ | 11.65 грн |
| 3000+ | 9.45 грн |
| HD02-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 200V 0.8A
Bridge Rectifiers 200V 0.8A
на замовлення 5523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 36.37 грн |
| 13+ | 29.79 грн |
| 100+ | 17.63 грн |
| 500+ | 12.67 грн |
| 1000+ | 9.92 грн |
| 3000+ | 9.05 грн |
| 6000+ | 8.50 грн |
| DF04M |
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Виробник: Diodes Incorporated
Bridge Rectifiers 400V 1A
Bridge Rectifiers 400V 1A
на замовлення 12840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 42.62 грн |
| 22+ | 16.48 грн |
| 100+ | 12.83 грн |
| 500+ | 10.39 грн |
| 1000+ | 8.74 грн |
| 5000+ | 8.34 грн |
| 10000+ | 8.03 грн |
| DF1501S-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 100V 1.5A
Bridge Rectifiers 100V 1.5A
на замовлення 8365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.07 грн |
| 10+ | 36.94 грн |
| 100+ | 20.70 грн |
| 500+ | 16.14 грн |
| 1500+ | 13.30 грн |
| 3000+ | 11.26 грн |
| GBU806 |
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Виробник: Diodes Incorporated
Bridge Rectifiers 8.0A 600V
Bridge Rectifiers 8.0A 600V
на замовлення 578 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.75 грн |
| 10+ | 72.43 грн |
| 100+ | 51.17 грн |
| 500+ | 43.69 грн |
| 1000+ | 42.67 грн |
| GBU810 |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1000V 8A
Bridge Rectifiers 1000V 8A
на замовлення 490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.32 грн |
| 20+ | 59.57 грн |
| 100+ | 41.80 грн |
| 500+ | 34.09 грн |
| 1000+ | 29.05 грн |
| RH06-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 0.5A 600V
Bridge Rectifiers 0.5A 600V
на замовлення 20653 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.76 грн |
| 10+ | 52.69 грн |
| 100+ | 32.36 грн |
| 500+ | 25.59 грн |
| 1000+ | 22.67 грн |
| 3000+ | 19.45 грн |
| 6000+ | 19.05 грн |
| DF1504S-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 400V 1.5A
Bridge Rectifiers 400V 1.5A
на замовлення 4970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 58.41 грн |
| 11+ | 35.67 грн |
| 100+ | 20.00 грн |
| 500+ | 15.27 грн |
| 1000+ | 14.17 грн |
| 1500+ | 12.83 грн |
| DSRHD10-13 |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER
товару немає в наявності
В кошику
од. на суму грн.
| RH04-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 0.5A 400V
Bridge Rectifiers 0.5A 400V
на замовлення 4693 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.76 грн |
| 10+ | 57.04 грн |
| 100+ | 32.67 грн |
| 500+ | 25.35 грн |
| 1000+ | 22.83 грн |
| 3000+ | 18.42 грн |
| DF15005S-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1.5A 50V
Bridge Rectifiers 1.5A 50V
на замовлення 3050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 58.41 грн |
| 11+ | 35.67 грн |
| 100+ | 20.00 грн |
| 500+ | 15.27 грн |
| 1000+ | 14.09 грн |
| 1500+ | 11.26 грн |
| 3000+ | 10.71 грн |
| DSRHD08-13 |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER
Bridge Rectifiers 1.0A DSR BRIDGE DIODESTAR RECTIFIER
товару немає в наявності
В кошику
од. на суму грн.
| DF01M |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 100V 1A
Bridge Rectifiers 100V 1A
на замовлення 4120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.98 грн |
| 23+ | 16.39 грн |
| 100+ | 14.17 грн |
| 500+ | 9.76 грн |
| 1000+ | 8.97 грн |
| 5000+ | 8.34 грн |
| 10000+ | 8.03 грн |
| DF10S-T |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1A 1000Vrrm 50Ifsm
Bridge Rectifiers 1A 1000Vrrm 50Ifsm
на замовлення 18051 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.36 грн |
| 10+ | 38.21 грн |
| 100+ | 19.60 грн |
| 500+ | 15.35 грн |
| 1000+ | 14.49 грн |
| 1500+ | 11.89 грн |
| 3000+ | 11.26 грн |
| DF1506S-T |
![]() |
Виробник: Diodes Incorporated
Bridge Rectifiers 1.5A 600V
Bridge Rectifiers 1.5A 600V
на замовлення 2527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 68.70 грн |
| 10+ | 42.01 грн |
| 100+ | 23.46 грн |
| 500+ | 18.11 грн |
| 1000+ | 17.71 грн |
| 1500+ | 13.30 грн |
| 3000+ | 12.75 грн |
| KBJ406G |
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Виробник: Diodes Incorporated
Bridge Rectifiers 4.0A 600V
Bridge Rectifiers 4.0A 600V
на замовлення 169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.73 грн |
| 10+ | 59.39 грн |
| 100+ | 39.28 грн |
| 500+ | 30.15 грн |
| 1000+ | 28.81 грн |
| DF1510S |
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Виробник: Diodes Incorporated
Bridge Rectifiers 1.5A 1000V
Bridge Rectifiers 1.5A 1000V
на замовлення 514 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.71 грн |
| 10+ | 71.34 грн |
| 100+ | 56.60 грн |
| 500+ | 44.95 грн |
| 1000+ | 39.60 грн |




















