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GBL210-TU Diodes Incorporated GBL206-GBL210.pdf Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBL208-TU Diodes Incorporated GBL206-GBL210.pdf Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DF01S DF01S Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
4+91.77 грн
50+40.99 грн
100+36.39 грн
Мінімальне замовлення: 4 шт
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GBJS3010-F Diodes Incorporated GBJS3010.pdf Description: STANDARD BRIDGE GBJS TUBE 15PCS
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MBR3050PT MBR3050PT Diodes Incorporated ds23017.pdf Description: DIODE ARRAY SCHOTT 50V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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3.0SMCJ170AQ-13 3.0SMCJ170AQ-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DMT69M5LCG-13 DMT69M5LCG-13 Diodes Incorporated DMT69M5LCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
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DMT69M5LCG-7 DMT69M5LCG-7 Diodes Incorporated DMT69M5LCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
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DMT35M1LFVW-13 DMT35M1LFVW-13 Diodes Incorporated DMT35M1LFVW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
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DMT35M1LFVW-7 DMT35M1LFVW-7 Diodes Incorporated DMT35M1LFVW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
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PI1EQX512AXUAEX PI1EQX512AXUAEX Diodes Incorporated PI1EQX512A-Product-Brief.pdf Description: IC REDRIVER USB 3.0 18QFN
Packaging: Tape & Reel (TR)
Package / Case: 18-XFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 18-X2QFN (2x2)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX511EXUAEX Diodes Incorporated Description: IC REDRIVER USB 3.0 5.0GBPS
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.8V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX5984ZLEX PI2EQX5984ZLEX Diodes Incorporated PI2EQX5984_db.pdf Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX5984ZLIEX PI2EQX5984ZLIEX Diodes Incorporated PI2EQX5984_db.pdf Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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P6SMAJ6.5ADF P6SMAJ6.5ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 6.5VWM 11.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
7+46.68 грн
11+27.81 грн
Мінімальне замовлення: 7 шт
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AP62300TWU-7-N Diodes Incorporated AP62300.pdf Description: DCDC CONV HV BUCK TSOT26(STD) T&
Packaging: Tape & Reel (TR)
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GBU1506-TU GBU1506-TU Diodes Incorporated GBU1506.pdf Description: STANDARD BRIDGE GBU TUBE 20PCS
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
20+32.16 грн
Мінімальне замовлення: 20 шт
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AP2125N-4.2TRG1 AP2125N-4.2TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-4.2TRG1 AP2125N-4.2TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
27+11.87 грн
39+8.00 грн
44+7.01 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.53 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
AP2125N-2.5TRG1 AP2125N-2.5TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-2.5TRG1 AP2125N-2.5TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
27+11.87 грн
39+8.00 грн
44+7.01 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.53 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
AP2125N-2.8TRG1 AP2125N-2.8TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-2.8TRG1 AP2125N-2.8TRG1 Diodes Incorporated AP2125.pdf Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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3.0SMCJ33CAQ-13 Diodes Incorporated Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)
4+98.10 грн
10+59.58 грн
100+39.42 грн
500+28.88 грн
1000+26.26 грн
Мінімальне замовлення: 4 шт
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SB160-T SB160-T Diodes Incorporated ds23022.pdf Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SB160-T SB160-T Diodes Incorporated ds23022.pdf Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
9+38.77 грн
14+22.86 грн
100+14.54 грн
500+10.25 грн
1000+9.16 грн
2000+8.24 грн
Мінімальне замовлення: 9 шт
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FH3200017 FH3200017 Diodes Incorporated FH.pdf Description: CRYSTAL 32.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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DMN3401LT-13 DMN3401LT-13 Diodes Incorporated DMN3401LT.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMC3020UDVW-13 DMC3020UDVW-13 Diodes Incorporated DMC3020UDVW.pdf Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVW-7 DMC3020UDVW-7 Diodes Incorporated DMC3020UDVW.pdf Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVWQ-13 Diodes Incorporated DMC3020UDVWQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMC3020UDVWQ-7 Diodes Incorporated DMC3020UDVWQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400A-B 1.5KE400A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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74LVC1G08FX4-7 74LVC1G08FX4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
5000+7.16 грн
10000+6.71 грн
15000+6.62 грн
25000+6.11 грн
35000+6.06 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74LVC1G08FX4-7 74LVC1G08FX4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
19+17.41 грн
26+11.89 грн
30+10.48 грн
100+8.44 грн
250+7.77 грн
500+7.37 грн
1000+6.92 грн
2500+6.77 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
MBR4060PT MBR4060PT Diodes Incorporated ds23019.pdf description Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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74LVC1G125FS3-7 74LVC1G125FS3-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
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74LVC1G125FS3-7 74LVC1G125FS3-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)
27+11.87 грн
39+7.85 грн
45+6.92 грн
100+5.53 грн
250+5.06 грн
500+4.78 грн
1000+4.47 грн
2500+4.29 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
74LVC1G125FX4-7 74LVC1G125FX4-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
5000+7.07 грн
10000+6.63 грн
15000+6.54 грн
25000+6.04 грн
35000+5.98 грн
50000+5.93 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74LVC1G125FX4-7 74LVC1G125FX4-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
19+17.41 грн
26+11.73 грн
30+10.36 грн
100+8.34 грн
250+7.68 грн
500+7.28 грн
1000+6.83 грн
2500+6.69 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
FH1200001-W FH1200001-W Diodes Incorporated FH.pdf Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.90 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FH1200001-W FH1200001-W Diodes Incorporated FH.pdf Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+55.38 грн
10+46.24 грн
25+43.70 грн
50+39.31 грн
100+37.69 грн
250+35.64 грн
500+33.61 грн
1000+32.22 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMP610DL-13 DMP610DL-13 Diodes Incorporated DMP610DL.pdf Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
10000+2.40 грн
20000+2.09 грн
30000+1.98 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMP610DL-13 DMP610DL-13 Diodes Incorporated DMP610DL.pdf Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 42990 шт:
термін постачання 21-31 дні (днів)
22+15.03 грн
36+8.53 грн
100+5.29 грн
500+3.62 грн
1000+3.19 грн
2000+2.82 грн
5000+2.38 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
2N5551 Diodes Incorporated 2n5551.pdf 2N5551.pdf 2N5551%20TO-92-3.PDF 2n5551t-d.pdf 2N5551.pdf Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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PI3WVR13412AZHEX PI3WVR13412AZHEX Diodes Incorporated PI3WVR13412A.pdf Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PI3WVR13412AZHEX PI3WVR13412AZHEX Diodes Incorporated PI3WVR13412A.pdf Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
4+95.73 грн
10+67.04 грн
25+60.83 грн
100+50.62 грн
250+47.54 грн
500+46.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FK5000055Q FK5000055Q Diodes Incorporated FK5000055Q.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FK5000055Q FK5000055Q Diodes Incorporated FK5000055Q.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
3+106.81 грн
10+89.21 грн
25+84.38 грн
50+75.90 грн
100+72.76 грн
250+68.81 грн
500+64.88 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ADTC143ZLP4WQ-7B Diodes Incorporated ADTC143ZLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114YLP4WQ-7B Diodes Incorporated ADTC114YLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC144ELP4WQ-7B Diodes Incorporated ADTC144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+2.84 грн
20000+2.49 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ADTA144ELP4WQ-7B Diodes Incorporated ADTA144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114ELP4WQ-7B Diodes Incorporated ADTC114ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC143ZLP4WQ-7 Diodes Incorporated ADTC143ZLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC144ELP4WQ-7 Diodes Incorporated ADTC144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+3.42 грн
6000+2.96 грн
9000+2.78 грн
15000+2.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ADTA144ELP4WQ-7 Diodes Incorporated ADTA144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114ELP4WQ-7 Diodes Incorporated ADTC114ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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ADTC114YLP4WQ-7 Diodes Incorporated ADTC114YLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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DGD44175WU-7 DGD44175WU-7 Diodes Incorporated DGD44175.pdf Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+22.63 грн
6000+21.25 грн
9000+20.97 грн
15000+19.40 грн
21000+19.23 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
GBL210-TU GBL206-GBL210.pdf
Виробник: Diodes Incorporated
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBL208-TU GBL206-GBL210.pdf
Виробник: Diodes Incorporated
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DF01S ds17001.pdf
DF01S
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.77 грн
50+40.99 грн
100+36.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
GBJS3010-F GBJS3010.pdf
Виробник: Diodes Incorporated
Description: STANDARD BRIDGE GBJS TUBE 15PCS
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MBR3050PT ds23017.pdf
MBR3050PT
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 50V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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3.0SMCJ170AQ-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ170AQ-13
Виробник: Diodes Incorporated
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DMT69M5LCG-13 DMT69M5LCG.pdf
DMT69M5LCG-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
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DMT69M5LCG-7 DMT69M5LCG.pdf
DMT69M5LCG-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
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DMT35M1LFVW-13 DMT35M1LFVW.pdf
DMT35M1LFVW-13
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
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DMT35M1LFVW-7 DMT35M1LFVW.pdf
DMT35M1LFVW-7
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
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PI1EQX512AXUAEX PI1EQX512A-Product-Brief.pdf
PI1EQX512AXUAEX
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 18QFN
Packaging: Tape & Reel (TR)
Package / Case: 18-XFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 18-X2QFN (2x2)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX511EXUAEX
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 5.0GBPS
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.8V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX5984ZLEX PI2EQX5984_db.pdf
PI2EQX5984ZLEX
Виробник: Diodes Incorporated
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI2EQX5984ZLIEX PI2EQX5984_db.pdf
PI2EQX5984ZLIEX
Виробник: Diodes Incorporated
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
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P6SMAJ6.5ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ6.5ADF
Виробник: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.68 грн
11+27.81 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
AP62300TWU-7-N AP62300.pdf
Виробник: Diodes Incorporated
Description: DCDC CONV HV BUCK TSOT26(STD) T&
Packaging: Tape & Reel (TR)
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GBU1506-TU GBU1506.pdf
GBU1506-TU
Виробник: Diodes Incorporated
Description: STANDARD BRIDGE GBU TUBE 20PCS
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+32.16 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
AP2125N-4.2TRG1 AP2125.pdf
AP2125N-4.2TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-4.2TRG1 AP2125.pdf
AP2125N-4.2TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.87 грн
39+8.00 грн
44+7.01 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.53 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
AP2125N-2.5TRG1 AP2125.pdf
AP2125N-2.5TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-2.5TRG1 AP2125.pdf
AP2125N-2.5TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.87 грн
39+8.00 грн
44+7.01 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.53 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
AP2125N-2.8TRG1 AP2125.pdf
AP2125N-2.8TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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AP2125N-2.8TRG1 AP2125.pdf
AP2125N-2.8TRG1
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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3.0SMCJ33CAQ-13
Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.10 грн
10+59.58 грн
100+39.42 грн
500+28.88 грн
1000+26.26 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SB160-T ds23022.pdf
SB160-T
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SB160-T ds23022.pdf
SB160-T
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.77 грн
14+22.86 грн
100+14.54 грн
500+10.25 грн
1000+9.16 грн
2000+8.24 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
FH3200017 FH.pdf
FH3200017
Виробник: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
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DMN3401LT-13 DMN3401LT.pdf
DMN3401LT-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
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DMC3020UDVW-13 DMC3020UDVW.pdf
DMC3020UDVW-13
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVW-7 DMC3020UDVW.pdf
DMC3020UDVW-7
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVWQ-13 DMC3020UDVWQ.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMC3020UDVWQ-7 DMC3020UDVWQ.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400A-B ds21503.pdf
1.5KE400A-B
Виробник: Diodes Incorporated
Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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74LVC1G08FX4-7 74LVC1G08.pdf
74LVC1G08FX4-7
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+7.16 грн
10000+6.71 грн
15000+6.62 грн
25000+6.11 грн
35000+6.06 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74LVC1G08FX4-7 74LVC1G08.pdf
74LVC1G08FX4-7
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.41 грн
26+11.89 грн
30+10.48 грн
100+8.44 грн
250+7.77 грн
500+7.37 грн
1000+6.92 грн
2500+6.77 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
MBR4060PT description ds23019.pdf
MBR4060PT
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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74LVC1G125FS3-7 74LVC1G125.pdf
74LVC1G125FS3-7
Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
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74LVC1G125FS3-7 74LVC1G125.pdf
74LVC1G125FS3-7
Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.87 грн
39+7.85 грн
45+6.92 грн
100+5.53 грн
250+5.06 грн
500+4.78 грн
1000+4.47 грн
2500+4.29 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
74LVC1G125FX4-7 74LVC1G125.pdf
74LVC1G125FX4-7
Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+7.07 грн
10000+6.63 грн
15000+6.54 грн
25000+6.04 грн
35000+5.98 грн
50000+5.93 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74LVC1G125FX4-7 74LVC1G125.pdf
74LVC1G125FX4-7
Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.41 грн
26+11.73 грн
30+10.36 грн
100+8.34 грн
250+7.68 грн
500+7.28 грн
1000+6.83 грн
2500+6.69 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
FH1200001-W FH.pdf
FH1200001-W
Виробник: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.90 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FH1200001-W FH.pdf
FH1200001-W
Виробник: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.38 грн
10+46.24 грн
25+43.70 грн
50+39.31 грн
100+37.69 грн
250+35.64 грн
500+33.61 грн
1000+32.22 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.40 грн
20000+2.09 грн
30000+1.98 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 42990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.03 грн
36+8.53 грн
100+5.29 грн
500+3.62 грн
1000+3.19 грн
2000+2.82 грн
5000+2.38 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
2N5551 2n5551.pdf 2N5551.pdf 2N5551%20TO-92-3.PDF 2n5551t-d.pdf 2N5551.pdf
Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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PI3WVR13412AZHEX PI3WVR13412A.pdf
PI3WVR13412AZHEX
Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PI3WVR13412AZHEX PI3WVR13412A.pdf
PI3WVR13412AZHEX
Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.73 грн
10+67.04 грн
25+60.83 грн
100+50.62 грн
250+47.54 грн
500+46.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FK5000055Q FK5000055Q.pdf
FK5000055Q
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику  од. на суму  грн.
FK5000055Q FK5000055Q.pdf
FK5000055Q
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.81 грн
10+89.21 грн
25+84.38 грн
50+75.90 грн
100+72.76 грн
250+68.81 грн
500+64.88 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ADTC143ZLP4WQ-7B ADTC143ZLP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114YLP4WQ-7B ADTC114YLP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
ADTC144ELP4WQ-7B ADTC144ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.84 грн
20000+2.49 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ADTA144ELP4WQ-7B ADTA144ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC114ELP4WQ-7B ADTC114ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC143ZLP4WQ-7 ADTC143ZLP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC144ELP4WQ-7 ADTC144ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.42 грн
6000+2.96 грн
9000+2.78 грн
15000+2.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ADTA144ELP4WQ-7 ADTA144ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC114ELP4WQ-7 ADTC114ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ADTC114YLP4WQ-7 ADTC114YLP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
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DGD44175WU-7 DGD44175.pdf
DGD44175WU-7
Виробник: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+22.63 грн
6000+21.25 грн
9000+20.97 грн
15000+19.40 грн
21000+19.23 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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