Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72992) > Сторінка 699 з 1217
| Фото | Назва | Виробник | Інформація |
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| GBL210-TU | Diodes Incorporated |
Description: LOW POWER BRIDGE GBL TUBE 25PCSPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||
| GBL208-TU | Diodes Incorporated |
Description: LOW POWER BRIDGE GBL TUBE 25PCSPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||
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DF01S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 100V 1A DF-SPackaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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| GBJS3010-F | Diodes Incorporated |
Description: STANDARD BRIDGE GBJS TUBE 15PCSPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBJS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
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MBR3050PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTT 50V 30A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A Current - Reverse Leakage @ Vr: 5 mA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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3.0SMCJ170AQ-13 | Diodes Incorporated |
Description: TVS DIODE 170VWM 275VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMT69M5LCG-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V V-DFN3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Power Dissipation (Max): 1.37W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMT69M5LCG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V V-DFN3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Power Dissipation (Max): 1.37W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMT35M1LFVW-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMT35M1LFVW-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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PI1EQX512AXUAEX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 18QFNPackaging: Tape & Reel (TR) Package / Case: 18-XFQFN Exposed Pad Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1V Applications: USB 3.0 Data Rate (Max): 5Gbps Supplier Device Package: 18-X2QFN (2x2) Signal Conditioning: Input Equalization, Output De-Emphasis |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||||
| PI2EQX511EXUAEX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 5.0GBPS Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 1 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1.8V Applications: USB 3.0 Data Rate (Max): 5Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization, Output De-Emphasis |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | |||||||||||||||||
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PI2EQX5984ZLEX | Diodes Incorporated |
Description: IC REDRIVER 5GBPS 4-LANE 72TQFNPackaging: Tape & Reel (TR) Package / Case: 72-WFQFN Exposed Pad Number of Channels: 8 Mounting Type: Surface Mount Type: Buffer, ReDriver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.2V Applications: I2C Data Rate (Max): 5Gbps Supplier Device Package: 72-TQFN (11x5) Signal Conditioning: Input Equalization, Output De-Emphasis |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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PI2EQX5984ZLIEX | Diodes Incorporated |
Description: IC REDRIVER 5GBPS 4-LANE 72TQFNPackaging: Tape & Reel (TR) Package / Case: 72-WFQFN Exposed Pad Number of Channels: 8 Mounting Type: Surface Mount Type: Buffer, ReDriver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.2V Applications: I2C Data Rate (Max): 5Gbps Supplier Device Package: 72-TQFN (11x5) Signal Conditioning: Input Equalization, Output De-Emphasis |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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P6SMAJ6.5ADF | Diodes Incorporated |
Description: TVS DIODE 6.5VWM 11.2VC D-FLATPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53.6A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| AP62300TWU-7-N | Diodes Incorporated |
Description: DCDC CONV HV BUCK TSOT26(STD) T&Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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GBU1506-TU | Diodes Incorporated |
Description: STANDARD BRIDGE GBU TUBE 20PCSPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AP2125N-4.2TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 4.2V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 4.2V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AP2125N-4.2TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 4.2V 300MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 4.2V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 2635 шт: термін постачання 21-31 дні (днів) |
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AP2125N-2.5TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.5V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AP2125N-2.5TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 300MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.5V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 1863 шт: термін постачання 21-31 дні (днів) |
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AP2125N-2.8TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 2.8V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.8V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2125N-2.8TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 2.8V 300MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.8V PSRR: 65dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 3.0SMCJ33CAQ-13 | Diodes Incorporated |
Description: TVS DIODE 33VWM 53.3VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 243000 шт: термін постачання 21-31 дні (днів) |
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SB160-T | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SB160-T | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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FH3200017 | Diodes Incorporated |
Description: CRYSTAL 32.0000MHZ 12PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (2.5x2) Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 50 Ohms Frequency: 32 MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN3401LT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT523 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC3020UDVW-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 20A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.18W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC3020UDVW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 20A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.18W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
| DMC3020UDVWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.18W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMC3020UDVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.18W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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1.5KE400A-B | Diodes Incorporated |
Description: TVS DIODE 342VWM 548VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G08FX4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1409-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1409-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G08FX4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1409-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1409-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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MBR4060PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTT 60V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G125FS3-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN0808-4Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN0808-4 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G125FS3-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN0808-4Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN0808-4 |
на замовлення 4955 шт: термін постачання 21-31 дні (днів) |
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74LVC1G125FX4-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN1409-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G125FX4-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN1409-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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FH1200001-W | Diodes Incorporated |
Description: CRYSTAL CERAMIC SEAM2520 T&R 3KPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FH1200001-W | Diodes Incorporated |
Description: CRYSTAL CERAMIC SEAM2520 T&R 3KPackaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP610DL-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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DMP610DL-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
на замовлення 42990 шт: термін постачання 21-31 дні (днів) |
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| 2N5551 | Diodes Incorporated |
Description: TRANS NPN 160V 0.2A TO-92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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PI3WVR13412AZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42 T&RPackaging: Tape & Reel (TR) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Applications: Video -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 3480 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3480 шт В кошику од. на суму грн. | ||||||||||||||||
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PI3WVR13412AZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42 T&RPackaging: Cut Tape (CT) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Applications: Video -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 3480 шт: термін постачання 21-31 дні (днів) |
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FK5000055Q | Diodes Incorporated |
Description: XTAL OSC XO 50.0000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Ratings: AEC-Q200 Current - Supply (Max): 8mA Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 50 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FK5000055Q | Diodes Incorporated |
Description: XTAL OSC XO 50.0000MHZ CMOS SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Ratings: AEC-Q200 Current - Supply (Max): 8mA Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 50 MHz Base Resonator: Crystal |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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| ADTC143ZLP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC114YLP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC144ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| ADTA144ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC114ELP4WQ-7B | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC143ZLP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC144ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| ADTA144ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1003-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC114ELP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| ADTC114YLP4WQ-7 | Diodes Incorporated |
Description: PREBIAS TRANSISTOR U-DFN1006-3 TPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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DGD44175WU-7 | Diodes Incorporated |
Description: HV GATE DRIVER TSOT26 T&R 3KPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 13.2V ~ 20V Input Type: Non-Inverting Supplier Device Package: TSOT-26 Rise / Fall Time (Typ): 10ns, 9ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3.2A, 2.6A |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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| GBL210-TU |
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Виробник: Diodes Incorporated
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| GBL208-TU |
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Виробник: Diodes Incorporated
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: LOW POWER BRIDGE GBL TUBE 25PCS
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| DF01S |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.77 грн |
| 50+ | 40.99 грн |
| 100+ | 36.39 грн |
| GBJS3010-F |
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Виробник: Diodes Incorporated
Description: STANDARD BRIDGE GBJS TUBE 15PCS
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: STANDARD BRIDGE GBJS TUBE 15PCS
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| MBR3050PT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 50V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Description: DIODE ARRAY SCHOTT 50V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| 3.0SMCJ170AQ-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT69M5LCG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT69M5LCG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT35M1LFVW-13 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT35M1LFVW-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PI1EQX512AXUAEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 18QFN
Packaging: Tape & Reel (TR)
Package / Case: 18-XFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 18-X2QFN (2x2)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 18QFN
Packaging: Tape & Reel (TR)
Package / Case: 18-XFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 18-X2QFN (2x2)
Signal Conditioning: Input Equalization, Output De-Emphasis
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| PI2EQX511EXUAEX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 5.0GBPS
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.8V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 5.0GBPS
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.8V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| PI2EQX5984ZLEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PI2EQX5984ZLIEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER 5GBPS 4-LANE 72TQFN
Packaging: Tape & Reel (TR)
Package / Case: 72-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V
Applications: I2C
Data Rate (Max): 5Gbps
Supplier Device Package: 72-TQFN (11x5)
Signal Conditioning: Input Equalization, Output De-Emphasis
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| P6SMAJ6.5ADF |
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Виробник: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.68 грн |
| 11+ | 27.81 грн |
| AP62300TWU-7-N |
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Виробник: Diodes Incorporated
Description: DCDC CONV HV BUCK TSOT26(STD) T&
Packaging: Tape & Reel (TR)
Description: DCDC CONV HV BUCK TSOT26(STD) T&
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| GBU1506-TU |
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Виробник: Diodes Incorporated
Description: STANDARD BRIDGE GBU TUBE 20PCS
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: STANDARD BRIDGE GBU TUBE 20PCS
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 32.16 грн |
| AP2125N-4.2TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP2125N-4.2TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 4.2V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.2V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 39+ | 8.00 грн |
| 44+ | 7.01 грн |
| 100+ | 5.59 грн |
| 250+ | 5.12 грн |
| 500+ | 4.83 грн |
| 1000+ | 4.53 грн |
| AP2125N-2.5TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP2125N-2.5TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 39+ | 8.00 грн |
| 44+ | 7.01 грн |
| 100+ | 5.59 грн |
| 250+ | 5.12 грн |
| 500+ | 4.83 грн |
| 1000+ | 4.53 грн |
| AP2125N-2.8TRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| AP2125N-2.8TRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
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В кошику
од. на суму грн.
| 3.0SMCJ33CAQ-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 59.58 грн |
| 100+ | 39.42 грн |
| 500+ | 28.88 грн |
| 1000+ | 26.26 грн |
| SB160-T |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SB160-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 14+ | 22.86 грн |
| 100+ | 14.54 грн |
| 500+ | 10.25 грн |
| 1000+ | 9.16 грн |
| 2000+ | 8.24 грн |
| FH3200017 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
Description: CRYSTAL 32.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 32 MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN3401LT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC3020UDVW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC3020UDVW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMC3020UDVWQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC3020UDVWQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1.5KE400A-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC1G08FX4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.16 грн |
| 10000+ | 6.71 грн |
| 15000+ | 6.62 грн |
| 25000+ | 6.11 грн |
| 35000+ | 6.06 грн |
| 74LVC1G08FX4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 26+ | 11.89 грн |
| 30+ | 10.48 грн |
| 100+ | 8.44 грн |
| 250+ | 7.77 грн |
| 500+ | 7.37 грн |
| 1000+ | 6.92 грн |
| 2500+ | 6.77 грн |
| MBR4060PT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC1G125FS3-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 74LVC1G125FS3-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 39+ | 7.85 грн |
| 45+ | 6.92 грн |
| 100+ | 5.53 грн |
| 250+ | 5.06 грн |
| 500+ | 4.78 грн |
| 1000+ | 4.47 грн |
| 2500+ | 4.29 грн |
| 74LVC1G125FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.07 грн |
| 10000+ | 6.63 грн |
| 15000+ | 6.54 грн |
| 25000+ | 6.04 грн |
| 35000+ | 5.98 грн |
| 50000+ | 5.93 грн |
| 74LVC1G125FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 26+ | 11.73 грн |
| 30+ | 10.36 грн |
| 100+ | 8.34 грн |
| 250+ | 7.68 грн |
| 500+ | 7.28 грн |
| 1000+ | 6.83 грн |
| 2500+ | 6.69 грн |
| FH1200001-W |
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Виробник: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 33.90 грн |
| FH1200001-W |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.38 грн |
| 10+ | 46.24 грн |
| 25+ | 43.70 грн |
| 50+ | 39.31 грн |
| 100+ | 37.69 грн |
| 250+ | 35.64 грн |
| 500+ | 33.61 грн |
| 1000+ | 32.22 грн |
| DMP610DL-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.40 грн |
| 20000+ | 2.09 грн |
| 30000+ | 1.98 грн |
| DMP610DL-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 42990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 36+ | 8.53 грн |
| 100+ | 5.29 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.19 грн |
| 2000+ | 2.82 грн |
| 5000+ | 2.38 грн |
| 2N5551 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PI3WVR13412AZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)Мінімальне замовлення: 3480 шт В кошику од. на суму грн.
| PI3WVR13412AZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.73 грн |
| 10+ | 67.04 грн |
| 25+ | 60.83 грн |
| 100+ | 50.62 грн |
| 250+ | 47.54 грн |
| 500+ | 46.49 грн |
| FK5000055Q |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FK5000055Q |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 106.81 грн |
| 10+ | 89.21 грн |
| 25+ | 84.38 грн |
| 50+ | 75.90 грн |
| 100+ | 72.76 грн |
| 250+ | 68.81 грн |
| 500+ | 64.88 грн |
| ADTC143ZLP4WQ-7B |
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Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ADTC114YLP4WQ-7B |
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Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ADTC144ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.84 грн |
| 20000+ | 2.49 грн |
| ADTA144ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ADTC114ELP4WQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ADTC143ZLP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADTC144ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.42 грн |
| 6000+ | 2.96 грн |
| 9000+ | 2.78 грн |
| 15000+ | 2.43 грн |
| ADTA144ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADTC114ELP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADTC114YLP4WQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DGD44175WU-7 |
![]() |
Виробник: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.63 грн |
| 6000+ | 21.25 грн |
| 9000+ | 20.97 грн |
| 15000+ | 19.40 грн |
| 21000+ | 19.23 грн |




















