Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (24836) > Сторінка 384 з 414
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MBR20150CT | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. forward impulse current: 130A Kind of package: tube |
на замовлення 893 шт: термін постачання 14-30 дні (днів) |
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DIW018N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 60A Power dissipation: 155W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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DI018N65D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 54A Power dissipation: 142W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM5408 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; 1.5us; MELF plastic; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 100A Case: MELF plastic Max. forward voltage: 1.2V Max. load current: 30A Reverse recovery time: 1.5µs |
на замовлення 11566 шт: термін постачання 14-30 дні (днів) |
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SM5402 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 100A Case: MELF plastic Max. forward voltage: 1.2V Reverse recovery time: 1.5µs Max. load current: 30A |
на замовлення 17664 шт: термін постачання 14-30 дні (днів) |
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SM5400 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: MELF plastic Max. forward voltage: 1.2V Max. load current: 30A Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2426 шт: термін постачання 14-30 дні (днів) |
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| SM5405 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 500V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 500V Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: MELF plastic Max. forward voltage: 1.2V Max. load current: 30A Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
| SM5403 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: MELF plastic Max. forward voltage: 1.2V Max. load current: 30A Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU6J | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 158A Case: GBU Type of bridge rectifier: single-phase Max. forward impulse current: 158A Max. forward voltage: 1V Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 0.6kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 5283 шт: термін постачання 14-30 дні (днів) |
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GBU6K | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 158A Case: GBU Type of bridge rectifier: single-phase Max. forward impulse current: 158A Max. forward voltage: 1V Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 3386 шт: термін постачання 14-30 дні (днів) |
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GBU6D | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 158A Case: GBU Type of bridge rectifier: single-phase Max. forward impulse current: 158A Max. forward voltage: 1V Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 2601 шт: термін постачання 14-30 дні (днів) |
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GBU6G | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 158A Case: GBU Type of bridge rectifier: single-phase Max. forward impulse current: 158A Max. forward voltage: 1V Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 1130 шт: термін постачання 14-30 дні (днів) |
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GBU6A | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 158A; flat Case: GBU Type of bridge rectifier: single-phase Max. forward impulse current: 158A Max. forward voltage: 1V Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 50V Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 538 шт: термін постачання 14-30 дні (днів) |
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MM1Z4742A | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 12V; SMD; SOD123F; single diode; reel,tape; MM1Z Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Manufacturer series: MM1Z Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
| DI160N04PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 83.3W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Pulsed drain current: 640A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DI160N04PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 83.3W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Pulsed drain current: 640A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DIF120SIC022-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 28mΩ Mounting: THT Gate charge: 269nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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DIF120SIC022 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 28mΩ Mounting: THT Gate charge: 269nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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DIW120SIC022-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Case: TO247-3 Mounting: THT Drain-source voltage: 1.2kV Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -4...18V Kind of package: tube On-state resistance: 28mΩ Pulsed drain current: 250A Power dissipation: 340W Gate charge: 269nC Polarisation: unipolar Technology: SiC Drain current: 85A Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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SB160 | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 1A; DO15; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO15 Max. forward voltage: 0.7V Max. forward impulse current: 40A Capacitance: 80pF Kind of package: Ammo Pack |
на замовлення 29017 шт: термін постачання 14-30 дні (днів) |
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SB160S | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.85V Max. forward impulse current: 30A Kind of package: Ammo Pack |
на замовлення 4138 шт: термін постачання 14-30 дні (днів) |
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TGL200CU08 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 800V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10% Type of diode: TVS+FRD Mounting: SMD Case: DO213AA Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: snubber diode; ultrafast switching Max. off-state voltage: 0.8kV Kind of package: reel; tape Reverse recovery time: 75ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
| TGL200C2K | DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: TVS+FRD; 2kV; 300W; MELF plastic; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Mounting: SMD Case: MELF plastic Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: fast switching; snubber diode Max. off-state voltage: 2kV Kind of package: reel; tape Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TGL200CF06 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 600V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape Type of diode: TVS+FRD Mounting: SMD Case: MELF plastic Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: fast switching; snubber diode Max. off-state voltage: 0.6kV Kind of package: reel; tape Reverse recovery time: 250ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TGL200CF08 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 800V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape Type of diode: TVS+FRD Mounting: SMD Case: MELF plastic Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: fast switching; snubber diode Max. off-state voltage: 0.8kV Kind of package: reel; tape Reverse recovery time: 250ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TGL200CF10 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 1kV; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape Type of diode: TVS+FRD Mounting: SMD Case: MELF plastic Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: fast switching; snubber diode Max. off-state voltage: 1kV Kind of package: reel; tape Reverse recovery time: 250ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TGL200CU06 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10% Type of diode: TVS+FRD Mounting: SMD Case: DO213AA Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: snubber diode; ultrafast switching Max. off-state voltage: 0.6kV Kind of package: reel; tape Reverse recovery time: 75ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TGL200CU10 | DIOTEC SEMICONDUCTOR |
Category: Diodes - othersDescription: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Mounting: SMD Case: DO213AA Max. forward impulse current: 1A Leakage current: 5µA Peak pulse power dissipation: 0.3kW Features of semiconductor devices: snubber diode; ultrafast switching Max. off-state voltage: 1kV Kind of package: reel; tape Reverse recovery time: 75ns Tolerance: ±10% Breakdown voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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MM3Z33B | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode Power dissipation: 0.3W Tolerance: ±2% Zener voltage: 33V Manufacturer series: MM3ZxxB Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323F Type of diode: Zener |
на замовлення 1547 шт: термін постачання 14-30 дні (днів) |
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MM3Z33B-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode Power dissipation: 0.3W Tolerance: ±2% Zener voltage: 33V Application: automotive industry Manufacturer series: MM3ZxxB Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323F Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
| MM5Z33B-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 33V; SMD; SOD523F; reel,tape; single diode Power dissipation: 0.3W Tolerance: ±2% Zener voltage: 33V Application: automotive industry Manufacturer series: MM5ZxxB Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD523F Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PX1500M | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 15A; Ammo Pack; Ifsm: 400A; P600; 1.5us Case: P600 Mounting: THT Kind of package: Ammo Pack Type of diode: rectifying Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 0.9V Load current: 15A Max. off-state voltage: 1kV Max. load current: 80A Max. forward impulse current: 0.4kA Semiconductor structure: single diode |
на замовлення 320 шт: термін постачання 14-30 дні (днів) |
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BC858C | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Current gain: 520 Kind of package: reel; tape |
на замовлення 4438 шт: термін постачання 14-30 дні (днів) |
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BC858C-AQ | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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S15BYD2 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 15A; 1.5us; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Reverse recovery time: 1.5µs Semiconductor structure: single diode Capacitance: 0.12nF Case: D2PAK Max. forward voltage: 1.3V Max. load current: 50A Max. forward impulse current: 250A Leakage current: 0.1mA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5KE120CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 120V; 9.5A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack Type of diode: TVS Kind of package: Ammo Pack Mounting: THT Tolerance: ±5% Semiconductor structure: bidirectional Manufacturer series: 1.5KE Breakdown voltage: 120V Max. forward impulse current: 9.5A Peak pulse power dissipation: 1.5kW Max. off-state voltage: 102V Body dimensions: Ø5.4x7.5mm Leakage current: 5µA |
на замовлення 996 шт: термін постачання 14-30 дні (днів) |
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1.5KE120A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 120V; 9.5A; unidirectional; ±5%; Ø5.4x7.5mm Type of diode: TVS Breakdown voltage: 120V Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Body dimensions: Ø5.4x7.5mm Max. forward impulse current: 9.5A Max. off-state voltage: 102V Tolerance: ±5% Leakage current: 5µA |
на замовлення 717 шт: термін постачання 14-30 дні (днів) |
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1N4933 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching Max. load current: 10A |
на замовлення 2645 шт: термін постачання 14-30 дні (днів) |
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SK10100D2 | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube Case: D2PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 115A Max. forward voltage: 0.83V Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Capacitance: 0.3nF Type of diode: Schottky rectifying |
на замовлення 766 шт: термін постачання 14-30 дні (днів) |
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1.5SMCJ33CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.7V; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.7V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
на замовлення 2418 шт: термін постачання 14-30 дні (днів) |
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5.0SMCJ33CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Manufacturer series: 5.0SMCJ |
на замовлення 2650 шт: термін постачання 14-30 дні (днів) |
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3.0SMCJ33CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.7V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMCJ33CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.7V; 28.1A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.7V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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3.0SMCJ33CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.7V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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5.0SMCJ33CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Manufacturer series: 5.0SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DIJ006N90 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 37.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Pulsed drain current: 16A Power dissipation: 37.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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BAS31 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Semiconductor structure: double series Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: small signal; superfast switching Max. off-state voltage: 120V Load current: 0.2A Max. load current: 0.6A Kind of package: reel; tape |
на замовлення 3665 шт: термін постачання 14-30 дні (днів) |
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BAS35 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 90V; 0.2A; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Semiconductor structure: common anode; double Leakage current: 0.1mA Case: SOT23 Type of diode: switching Max. forward impulse current: 2A Max. forward voltage: 1.25V Max. off-state voltage: 90V Load current: 0.2A Kind of package: reel; tape |
на замовлення 3500 шт: термін постачання 14-30 дні (днів) |
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BAS31R13 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Semiconductor structure: double series Leakage current: 0.1mA Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: superfast switching Max. off-state voltage: 120V Load current: 0.2A Max. load current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| GBU4K-LV | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 0.91V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU4K-LV-T | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.91V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DI040N03PT-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
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| DI040N03PT | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P6KE82CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Tolerance: ±5% Manufacturer series: P6KE |
на замовлення 1627 шт: термін постачання 14-30 дні (днів) |
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SMF22A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 5.63A Semiconductor structure: unidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF Tolerance: ±5% |
на замовлення 2185 шт: термін постачання 14-30 дні (днів) |
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SMF22CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 5.63A Semiconductor structure: bidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF Tolerance: ±5% |
на замовлення 1025 шт: термін постачання 14-30 дні (днів) |
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SMF220A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 246÷272V; 0.56A; unidirectional; ±5%; SMF,SOD123F Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 220V Breakdown voltage: 246...272V Max. forward impulse current: 0.56A Semiconductor structure: unidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Manufacturer series: SMF Kind of package: reel; tape Tolerance: ±5% |
на замовлення 2950 шт: термін постачання 14-30 дні (днів) |
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SMF220CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 246÷272V; 0.56A; bidirectional; ±5%; SMF,SOD123F Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 220V Breakdown voltage: 246...272V Max. forward impulse current: 0.56A Semiconductor structure: bidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Manufacturer series: SMF Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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DD1000 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ufmax: 40V Type of diode: rectifying Mounting: THT Max. off-state voltage: 10kV Load current: 20mA Semiconductor structure: single diode Features of semiconductor devices: fast switching; high voltage Kind of package: Ammo Pack Max. forward impulse current: 3A Max. forward voltage: 40V Max. load current: 0.3A Reverse recovery time: 150ns Body dimensions: Ø3x12mm |
на замовлення 5270 шт: термін постачання 14-30 дні (днів) |
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BZX84C3V6 | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 6948 шт: термін постачання 14-30 дні (днів) |
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| MBR20150CT |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 130A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 130A
Kind of package: tube
на замовлення 893 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.51 грн |
| 10+ | 84.24 грн |
| 50+ | 45.10 грн |
| 100+ | 34.74 грн |
| 500+ | 32.67 грн |
| DIW018N65 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 395.55 грн |
| 10+ | 297.65 грн |
| 30+ | 224.69 грн |
| DI018N65D1 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SM5408 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 1.5µs
на замовлення 11566 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.22 грн |
| 28+ | 15.09 грн |
| 100+ | 11.36 грн |
| 500+ | 9.20 грн |
| 1000+ | 8.37 грн |
| 5000+ | 6.72 грн |
| 10000+ | 6.05 грн |
| SM5402 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: MELF plastic
Max. forward voltage: 1.2V
Reverse recovery time: 1.5µs
Max. load current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: MELF plastic
Max. forward voltage: 1.2V
Reverse recovery time: 1.5µs
Max. load current: 30A
на замовлення 17664 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 62+ | 6.72 грн |
| 70+ | 5.97 грн |
| 100+ | 5.64 грн |
| 1000+ | 4.59 грн |
| 5000+ | 3.85 грн |
| SM5400 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2426 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.64 грн |
| 46+ | 9.12 грн |
| 100+ | 6.04 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.81 грн |
| 2000+ | 3.55 грн |
| SM5405 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SM5403 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 1.5us; MELF plastic; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: MELF plastic
Max. forward voltage: 1.2V
Max. load current: 30A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| GBU6J |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 5283 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.89 грн |
| 19+ | 21.89 грн |
| 21+ | 20.48 грн |
| 25+ | 18.16 грн |
| 100+ | 13.85 грн |
| 200+ | 13.35 грн |
| 400+ | 12.93 грн |
| 1000+ | 12.35 грн |
| GBU6K |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 3386 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.68 грн |
| 14+ | 31.42 грн |
| 100+ | 18.32 грн |
| 200+ | 16.00 грн |
| 600+ | 13.76 грн |
| 1000+ | 12.52 грн |
| 2000+ | 12.44 грн |
| GBU6D |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 2601 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.79 грн |
| 12+ | 37.64 грн |
| 13+ | 32.67 грн |
| 100+ | 20.15 грн |
| 200+ | 17.66 грн |
| 1000+ | 13.68 грн |
| 2000+ | 12.44 грн |
| GBU6G |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 158A
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 1130 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.36 грн |
| 24+ | 17.41 грн |
| 30+ | 13.93 грн |
| 200+ | 12.27 грн |
| GBU6A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 158A; flat
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 158A; flat
Case: GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 158A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 538 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.75 грн |
| MM1Z4742A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123F; single diode; reel,tape; MM1Z
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Manufacturer series: MM1Z
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123F; single diode; reel,tape; MM1Z
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Manufacturer series: MM1Z
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
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| DI160N04PQ-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 83.3W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 83.3W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Application: automotive industry
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| DI160N04PQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 83.3W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; Idm: 640A; 83.3W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 83.3W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
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| DIF120SIC022-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3966.25 грн |
| 5+ | 3444.16 грн |
| 30+ | 3221.13 грн |
| DIF120SIC022 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2431.36 грн |
| 5+ | 1914.44 грн |
| 30+ | 1736.18 грн |
| DIW120SIC022-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 28mΩ
Pulsed drain current: 250A
Power dissipation: 340W
Gate charge: 269nC
Polarisation: unipolar
Technology: SiC
Drain current: 85A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 28mΩ
Pulsed drain current: 250A
Power dissipation: 340W
Gate charge: 269nC
Polarisation: unipolar
Technology: SiC
Drain current: 85A
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3966.25 грн |
| 5+ | 3444.16 грн |
| 30+ | 3221.13 грн |
| SB160 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO15; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO15
Max. forward voltage: 0.7V
Max. forward impulse current: 40A
Capacitance: 80pF
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO15; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO15
Max. forward voltage: 0.7V
Max. forward impulse current: 40A
Capacitance: 80pF
Kind of package: Ammo Pack
на замовлення 29017 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 61+ | 6.80 грн |
| 100+ | 5.11 грн |
| 500+ | 4.01 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.13 грн |
| 4000+ | 2.70 грн |
| 8000+ | 2.33 грн |
| SB160S |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
на замовлення 4138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.50 грн |
| 66+ | 6.30 грн |
| 100+ | 4.34 грн |
| 500+ | 3.37 грн |
| 1000+ | 3.03 грн |
| TGL200CU08 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 800V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 800V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5 шт
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од. на суму грн.
| TGL200C2K |
Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 2kV; 300W; MELF plastic; Ifsm: 1A; reel,tape; Ir: 5uA
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 2kV
Kind of package: reel; tape
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 2kV; 300W; MELF plastic; Ifsm: 1A; reel,tape; Ir: 5uA
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 2kV
Kind of package: reel; tape
Tolerance: ±10%
Breakdown voltage: 200V
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од. на суму грн.
| TGL200CF06 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 600V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 600V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TGL200CF08 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 800V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 800V; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TGL200CF10 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 1kV; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 1kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 1kV; 300W; MELF plastic; 250ns; Ifsm: 1A; reel,tape
Type of diode: TVS+FRD
Mounting: SMD
Case: MELF plastic
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: fast switching; snubber diode
Max. off-state voltage: 1kV
Kind of package: reel; tape
Reverse recovery time: 250ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TGL200CU06 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TGL200CU10 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Diodes - others
Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 1kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
Category: Diodes - others
Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA
Type of diode: TVS+FRD
Mounting: SMD
Case: DO213AA
Max. forward impulse current: 1A
Leakage current: 5µA
Peak pulse power dissipation: 0.3kW
Features of semiconductor devices: snubber diode; ultrafast switching
Max. off-state voltage: 1kV
Kind of package: reel; tape
Reverse recovery time: 75ns
Tolerance: ±10%
Breakdown voltage: 200V
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| MM3Z33B |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Manufacturer series: MM3ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323F
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Manufacturer series: MM3ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323F
Type of diode: Zener
на замовлення 1547 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.57 грн |
| 162+ | 2.57 грн |
| 199+ | 2.09 грн |
| 500+ | 1.76 грн |
| 1000+ | 1.62 грн |
| MM3Z33B-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Manufacturer series: MM3ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323F
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD323F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Manufacturer series: MM3ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323F
Type of diode: Zener
товару немає в наявності
Мінімальне замовлення: 25 шт
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од. на суму грн.
| MM5Z33B-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD523F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Manufacturer series: MM5ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523F
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOD523F; reel,tape; single diode
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Manufacturer series: MM5ZxxB
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523F
Type of diode: Zener
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| PX1500M |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Case: P600
Mounting: THT
Kind of package: Ammo Pack
Type of diode: rectifying
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 0.9V
Load current: 15A
Max. off-state voltage: 1kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Case: P600
Mounting: THT
Kind of package: Ammo Pack
Type of diode: rectifying
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 0.9V
Load current: 15A
Max. off-state voltage: 1kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Semiconductor structure: single diode
на замовлення 320 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.93 грн |
| 10+ | 50.99 грн |
| 100+ | 34.08 грн |
| BC858C |
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Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Current gain: 520
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Current gain: 520
Kind of package: reel; tape
на замовлення 4438 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.25 грн |
| 82+ | 5.06 грн |
| 129+ | 3.23 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.67 грн |
| 3000+ | 1.26 грн |
| BC858C-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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Мінімальне замовлення: 25 шт
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| S15BYD2 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 15A; 1.5us; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Capacitance: 0.12nF
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 50A
Max. forward impulse current: 250A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 15A; 1.5us; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Capacitance: 0.12nF
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 50A
Max. forward impulse current: 250A
Leakage current: 0.1mA
Kind of package: reel; tape
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| 1.5KE120CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 120V; 9.5A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack
Type of diode: TVS
Kind of package: Ammo Pack
Mounting: THT
Tolerance: ±5%
Semiconductor structure: bidirectional
Manufacturer series: 1.5KE
Breakdown voltage: 120V
Max. forward impulse current: 9.5A
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Body dimensions: Ø5.4x7.5mm
Leakage current: 5µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 120V; 9.5A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack
Type of diode: TVS
Kind of package: Ammo Pack
Mounting: THT
Tolerance: ±5%
Semiconductor structure: bidirectional
Manufacturer series: 1.5KE
Breakdown voltage: 120V
Max. forward impulse current: 9.5A
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Body dimensions: Ø5.4x7.5mm
Leakage current: 5µA
на замовлення 996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.57 грн |
| 21+ | 20.15 грн |
| 100+ | 16.00 грн |
| 1.5KE120A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.5A; unidirectional; ±5%; Ø5.4x7.5mm
Type of diode: TVS
Breakdown voltage: 120V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Body dimensions: Ø5.4x7.5mm
Max. forward impulse current: 9.5A
Max. off-state voltage: 102V
Tolerance: ±5%
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.5A; unidirectional; ±5%; Ø5.4x7.5mm
Type of diode: TVS
Breakdown voltage: 120V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Body dimensions: Ø5.4x7.5mm
Max. forward impulse current: 9.5A
Max. off-state voltage: 102V
Tolerance: ±5%
Leakage current: 5µA
на замовлення 717 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.39 грн |
| 20+ | 21.64 грн |
| 100+ | 16.83 грн |
| 250+ | 15.09 грн |
| 500+ | 13.68 грн |
| 1N4933 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Max. load current: 10A
на замовлення 2645 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.93 грн |
| 93+ | 4.48 грн |
| 130+ | 3.19 грн |
| 500+ | 2.42 грн |
| 1000+ | 2.20 грн |
| SK10100D2 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 115A
Max. forward voltage: 0.83V
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Capacitance: 0.3nF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 115A
Max. forward voltage: 0.83V
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Capacitance: 0.3nF
Type of diode: Schottky rectifying
на замовлення 766 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.97 грн |
| 15+ | 28.85 грн |
| 25+ | 22.80 грн |
| 100+ | 20.89 грн |
| 500+ | 20.56 грн |
| 1.5SMCJ33CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.7V; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.7V; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
на замовлення 2418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.57 грн |
| 20+ | 20.89 грн |
| 100+ | 13.10 грн |
| 5.0SMCJ33CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
на замовлення 2650 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.86 грн |
| 25+ | 26.03 грн |
| 100+ | 24.13 грн |
| 500+ | 22.47 грн |
| 3.0SMCJ33CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
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| 1.5SMCJ33CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.7V; 28.1A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.7V; 28.1A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
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Мінімальне замовлення: 3 шт
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| 3.0SMCJ33CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷40.7V; 56.2A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.7V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
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| 5.0SMCJ33CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
Application: automotive industry
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| DIJ006N90 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.15 грн |
| 10+ | 131.00 грн |
| 50+ | 116.08 грн |
| 250+ | 106.96 грн |
| BAS31 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: small signal; superfast switching
Max. off-state voltage: 120V
Load current: 0.2A
Max. load current: 0.6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: small signal; superfast switching
Max. off-state voltage: 120V
Load current: 0.2A
Max. load current: 0.6A
Kind of package: reel; tape
на замовлення 3665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 61+ | 6.80 грн |
| 82+ | 5.07 грн |
| 100+ | 4.40 грн |
| 500+ | 3.13 грн |
| 1000+ | 2.82 грн |
| 3000+ | 2.35 грн |
| BAS35 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: common anode; double
Leakage current: 0.1mA
Case: SOT23
Type of diode: switching
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Max. off-state voltage: 90V
Load current: 0.2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: common anode; double
Leakage current: 0.1mA
Case: SOT23
Type of diode: switching
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Max. off-state voltage: 90V
Load current: 0.2A
Kind of package: reel; tape
на замовлення 3500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 3.18 грн |
| 175+ | 2.66 грн |
| 500+ | 2.35 грн |
| 3000+ | 2.11 грн |
| BAS31R13 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Leakage current: 0.1mA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: superfast switching
Max. off-state voltage: 120V
Load current: 0.2A
Max. load current: 0.6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Leakage current: 0.1mA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: superfast switching
Max. off-state voltage: 120V
Load current: 0.2A
Max. load current: 0.6A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| GBU4K-LV |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.91V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.91V
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| GBU4K-LV-T |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.91V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.91V
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| DI040N03PT-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.47 грн |
| 19+ | 22.22 грн |
| 100+ | 15.75 грн |
| DI040N03PT |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| P6KE82CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
на замовлення 1627 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.25 грн |
| 29+ | 14.76 грн |
| 100+ | 10.28 грн |
| 250+ | 9.04 грн |
| 500+ | 8.21 грн |
| 1000+ | 7.38 грн |
| SMF22A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.63A
Semiconductor structure: unidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.63A
Semiconductor structure: unidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
на замовлення 2185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.54 грн |
| 90+ | 4.68 грн |
| 105+ | 4.12 грн |
| 500+ | 3.70 грн |
| SMF22CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.63A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 24.4÷26.9V; 5.63A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.63A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
на замовлення 1025 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.54 грн |
| 90+ | 4.68 грн |
| 105+ | 4.12 грн |
| 500+ | 3.70 грн |
| SMF220A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 246÷272V; 0.56A; unidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.56A
Semiconductor structure: unidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMF
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 246÷272V; 0.56A; unidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.56A
Semiconductor structure: unidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMF
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 2950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.54 грн |
| 90+ | 4.68 грн |
| 105+ | 4.12 грн |
| 500+ | 3.70 грн |
| SMF220CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 246÷272V; 0.56A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.56A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMF
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 246÷272V; 0.56A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.56A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMF
Kind of package: reel; tape
Tolerance: ±5%
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| DD1000 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ufmax: 40V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 10kV
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Max. forward voltage: 40V
Max. load current: 0.3A
Reverse recovery time: 150ns
Body dimensions: Ø3x12mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ufmax: 40V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 10kV
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Max. forward voltage: 40V
Max. load current: 0.3A
Reverse recovery time: 150ns
Body dimensions: Ø3x12mm
на замовлення 5270 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.07 грн |
| 11+ | 40.54 грн |
| 100+ | 28.44 грн |
| 500+ | 22.63 грн |
| 1000+ | 20.56 грн |
| 2000+ | 18.90 грн |
| 2500+ | 18.41 грн |
| 5000+ | 18.32 грн |
| BZX84C3V6 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 6948 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.04 грн |
| 70+ | 5.97 грн |
| 81+ | 5.14 грн |
| 128+ | 3.25 грн |
| 500+ | 2.33 грн |
| 1000+ | 1.97 грн |
| 3000+ | 1.38 грн |
| 6000+ | 1.09 грн |




























