Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (23848) > Сторінка 387 з 398
| Фото | Назва | Виробник | Інформація |
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DI070P04PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DI110N03PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 420A Drain current: 70A Drain-source voltage: 30V Gate charge: 163nC On-state resistance: 2.5mΩ Gate-source voltage: ±20V Power dissipation: 35W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DI070P04PQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DI105N04PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 520A; 83W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 520A Drain current: 80A Drain-source voltage: 40V Gate charge: 23nC On-state resistance: 4mΩ Gate-source voltage: ±20V Power dissipation: 83W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DI120N04PQ-AQ-DIO | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 480A; 50W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 480A Drain current: 85A Drain-source voltage: 40V On-state resistance: 1.3mΩ Gate-source voltage: ±20V Power dissipation: 50W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DI017N06PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DI017N06PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI022N20PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI022N20PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI025N20PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 100A Drain current: 20A Drain-source voltage: 200V Gate charge: 28nC On-state resistance: 48mΩ Gate-source voltage: ±20V Power dissipation: 135W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DI068N03PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 210A Drain current: 43A Drain-source voltage: 30V Gate charge: 79nC On-state resistance: 4mΩ Gate-source voltage: ±20V Power dissipation: 25W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DI075N08PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 350A Drain current: 47A Drain-source voltage: 80V Gate charge: 89nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Power dissipation: 45W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI100N04PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 83W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 400A Power dissipation: 83W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI100N10PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 480A Drain current: 50A Drain-source voltage: 100V Gate charge: 75nC On-state resistance: 6.6mΩ Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DI100P04PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -400A; 50W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Pulsed drain current: -400A Drain current: -70A Drain-source voltage: -40V On-state resistance: 3.8mΩ Power dissipation: 50W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SS5004WS | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 400V; 225mA; 100ns; SOD323; Ufmax: 1.25V Mounting: SMD Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: switching Leakage current: 0.1µA Reverse recovery time: 100ns Load current: 0.225A Max. load current: 0.625A Max. forward voltage: 1.25V Max. forward impulse current: 2A Max. off-state voltage: 0.4kV |
на замовлення 2982 шт: термін постачання 14-30 дні (днів) |
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| DI79M15D1 | DIOTEC SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: DI79LxxD1 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4% Number of channels: 1 Input voltage: -7.5...-25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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B125S-SLIM | DIOTEC SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 250V; If: 1A; Ifsm: 45A; SO-DIL; SMT Case: SO-DIL Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. off-state voltage: 250V Max. forward impulse current: 45A |
на замовлення 3895 шт: термін постачання 14-30 дні (днів) |
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B125S2A-SLIM | DIOTEC SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 250V; If: 2.3A; Ifsm: 65A; SO-DIL Case: SO-DIL Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 2.3A Max. off-state voltage: 250V Max. forward impulse current: 65A |
на замовлення 2965 шт: термін постачання 14-30 дні (днів) |
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SK1045D1 | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 135A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SK1045D2R-3G | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 135A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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P1000K | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 0.8kV Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 4494 шт: термін постачання 14-30 дні (днів) |
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P1000A | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 50V Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 1902 шт: термін постачання 14-30 дні (днів) |
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P1000S | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10A; Ammo Pack; Ifsm: 400A; P600 Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 1.2kV Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 1762 шт: термін постачання 14-30 дні (днів) |
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P1000J | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 0.6kV Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 4243 шт: термін постачання 14-30 дні (днів) |
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P1000B | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 0.1kV Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 2215 шт: термін постачання 14-30 дні (днів) |
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P1000D | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 200V Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 1183 шт: термін постачання 14-30 дні (днів) |
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P1000G | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 10µA Max. forward voltage: 1.05V Load current: 10A Max. off-state voltage: 0.4kV Max. load current: 80A Max. forward impulse current: 0.4kA Kind of package: Ammo Pack |
на замовлення 1069 шт: термін постачання 14-30 дні (днів) |
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5KP100CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 111÷128V; bidirectional; P600; Ammo Pack; 5kW; 5KP Manufacturer series: 5KP Mounting: THT Case: P600 Type of diode: TVS Leakage current: 10µA Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Peak pulse power dissipation: 5kW Kind of package: Ammo Pack Semiconductor structure: bidirectional |
на замовлення 324 шт: термін постачання 14-30 дні (днів) |
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SB140S | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.85V Max. forward impulse current: 30A Kind of package: Ammo Pack |
на замовлення 2133 шт: термін постачання 14-30 дні (днів) |
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SBX2050 | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 20A; P600; Ufmax: 610mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 20A Semiconductor structure: single diode Case: P600 Max. forward voltage: 0.61V Max. forward impulse current: 290A Kind of package: Ammo Pack Capacitance: 720pF |
на замовлення 4856 шт: термін постачання 14-30 дні (днів) |
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SBCT2050 | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 10Ax2; TO220AB; Ufmax: 700mV Mounting: THT Case: TO220AB Type of diode: Schottky rectifying Max. forward voltage: 0.7V Load current: 10A x2 Max. off-state voltage: 50V Max. forward impulse current: 130A Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE68CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 68V; 17A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack Type of diode: TVS Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 17A Semiconductor structure: bidirectional Tolerance: ±5% Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Body dimensions: Ø5.4x7.5mm |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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P6KE68CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 68V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE Type of diode: TVS Max. off-state voltage: 58.1V Breakdown voltage: 68V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Tolerance: ±5% Manufacturer series: P6KE Application: automotive industry |
на замовлення 2987 шт: термін постачання 14-30 дні (днів) |
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P4KE68CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 68V; 4.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W Type of diode: TVS Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 4.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P4KE68A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 400W; 68V; 4.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE150A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 150V; unidirectional; ±5%; DO15; Ammo Pack; P6KE Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 150V Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE |
на замовлення 4898 шт: термін постачання 14-30 дні (днів) |
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BY550-100 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 5A; Ammo Pack; Ifsm: 220A; Ufmax: 1V Semiconductor structure: single diode Type of diode: rectifying Mounting: THT Reverse recovery time: 1.5µs Leakage current: 5µA Body dimensions: Ø5.4x7.5mm Max. forward voltage: 1V Load current: 5A Max. load current: 44A Max. off-state voltage: 0.1kV Max. forward impulse current: 220A Kind of package: Ammo Pack |
на замовлення 1515 шт: термін постачання 14-30 дні (днів) |
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DI072N06PT | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3 Case: QFN3X3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 35nC On-state resistance: 7mΩ Power dissipation: 43W Drain current: 46A Pulsed drain current: 280A Gate-source voltage: ±20V Drain-source voltage: 65V |
на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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| BCV47 | DIOTEC SEMICONDUCTOR |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 360mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LL4448 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape Leakage current: 50µA |
на замовлення 22460 шт: термін постачання 14-30 дні (днів) |
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LL4448R13 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 150mA; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape Leakage current: 50µA |
на замовлення 1884 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ26A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷32.1V; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...32.1V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: P4SMAJ |
на замовлення 6278 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ26A-AQ | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷32.1V; 9.5A; unidirectional; ±5%; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...32.1V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTN2316K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 Gate charge: 6.5nC On-state resistance: 34mΩ Power dissipation: 1.5W Drain current: 6.2A Gate-source voltage: ±12V Pulsed drain current: 25A Drain-source voltage: 30V |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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MMFTN123 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2534 шт: термін постачання 14-30 дні (днів) |
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MMFTN2362 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTN2362-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMFTN123K-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.2A; Idm: 0.6A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Pulsed drain current: 0.6A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMFTN123K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.9W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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5KP16CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 17.8÷20.5V; bidirectional; P600; Ammo Pack; 5kW; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack Manufacturer series: 5KP |
на замовлення 973 шт: термін постачання 14-30 дні (днів) |
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SMF16CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 17.8÷19.7V; 7.69A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 7.69A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF |
на замовлення 778 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ16CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 17.8÷19.8V; 23.1A; bidirectional; ±5%; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.8V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 3050 шт: термін постачання 14-30 дні (днів) |
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TGL34-16CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 150W; 16V; 6.4A; bidirectional; ±5%; MiniMELF plastic Type of diode: TVS Peak pulse power dissipation: 0.15kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: MiniMELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: TGL34 |
на замовлення 1700 шт: термін постачання 14-30 дні (днів) |
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1.5SMCJ16CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.8÷19.8V; 57.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.8V Max. forward impulse current: 57.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
на замовлення 2327 шт: термін постачання 14-30 дні (днів) |
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5KP18CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 20÷23.3V; bidirectional; P600; Ammo Pack; 5kW; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack Manufacturer series: 5KP |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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SMF18CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 20÷22.1V; 6.85A; bidirectional; ±5%; SMF,SOD123F Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 6.85A Semiconductor structure: bidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF Tolerance: ±5% |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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P4KE18CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 16.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 16.5A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Manufacturer series: P4KE Tolerance: ±5% |
на замовлення 3945 шт: термін постачання 14-30 дні (днів) |
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SB150 | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 1A; DO15; Ufmax: 0.7V Case: DO15 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 50V Kind of package: Ammo Pack |
на замовлення 3602 шт: термін постачання 14-30 дні (днів) |
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SB150S | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 0.85V Case: DO41 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.85V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: Ammo Pack |
на замовлення 4814 шт: термін постачання 14-30 дні (днів) |
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| DI070P04PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI110N03PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI070P04PQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI105N04PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 520A; 83W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 520A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 23nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Power dissipation: 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 520A; 83W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 520A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 23nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Power dissipation: 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI120N04PQ-AQ-DIO |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 480A; 50W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 85A
Drain-source voltage: 40V
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 480A; 50W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 85A
Drain-source voltage: 40V
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI017N06PQ-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI017N06PQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI022N20PQ-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI022N20PQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI025N20PQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 100A
Drain current: 20A
Drain-source voltage: 200V
Gate charge: 28nC
On-state resistance: 48mΩ
Gate-source voltage: ±20V
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 100A
Drain current: 20A
Drain-source voltage: 200V
Gate charge: 28nC
On-state resistance: 48mΩ
Gate-source voltage: ±20V
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI068N03PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 210A
Drain current: 43A
Drain-source voltage: 30V
Gate charge: 79nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 210A
Drain current: 43A
Drain-source voltage: 30V
Gate charge: 79nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DI075N08PQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 350A
Drain current: 47A
Drain-source voltage: 80V
Gate charge: 89nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 350A
Drain current: 47A
Drain-source voltage: 80V
Gate charge: 89nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
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| DI100N04PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DI100N10PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 50A
Drain-source voltage: 100V
Gate charge: 75nC
On-state resistance: 6.6mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 50A
Drain-source voltage: 100V
Gate charge: 75nC
On-state resistance: 6.6mΩ
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
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| DI100P04PQ-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -400A; 50W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Pulsed drain current: -400A
Drain current: -70A
Drain-source voltage: -40V
On-state resistance: 3.8mΩ
Power dissipation: 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -400A; 50W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Pulsed drain current: -400A
Drain current: -70A
Drain-source voltage: -40V
On-state resistance: 3.8mΩ
Power dissipation: 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
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| 1SS5004WS |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 400V; 225mA; 100ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Leakage current: 0.1µA
Reverse recovery time: 100ns
Load current: 0.225A
Max. load current: 0.625A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: switching; SMD; 400V; 225mA; 100ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Leakage current: 0.1µA
Reverse recovery time: 100ns
Load current: 0.225A
Max. load current: 0.625A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 0.4kV
на замовлення 2982 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 95+ | 4.46 грн |
| 146+ | 2.89 грн |
| 250+ | 2.45 грн |
| 500+ | 2.14 грн |
| 1000+ | 1.91 грн |
| DI79M15D1 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: DI79LxxD1
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: DI79LxxD1
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
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| B125S-SLIM |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 250V; If: 1A; Ifsm: 45A; SO-DIL; SMT
Case: SO-DIL
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. off-state voltage: 250V
Max. forward impulse current: 45A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 250V; If: 1A; Ifsm: 45A; SO-DIL; SMT
Case: SO-DIL
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. off-state voltage: 250V
Max. forward impulse current: 45A
на замовлення 3895 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.23 грн |
| 65+ | 6.63 грн |
| 100+ | 5.36 грн |
| 500+ | 4.74 грн |
| 3000+ | 4.50 грн |
| B125S2A-SLIM |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 250V; If: 2.3A; Ifsm: 65A; SO-DIL
Case: SO-DIL
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2.3A
Max. off-state voltage: 250V
Max. forward impulse current: 65A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 250V; If: 2.3A; Ifsm: 65A; SO-DIL
Case: SO-DIL
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2.3A
Max. off-state voltage: 250V
Max. forward impulse current: 65A
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.71 грн |
| 24+ | 18.17 грн |
| 100+ | 10.51 грн |
| 500+ | 7.65 грн |
| 1000+ | 6.81 грн |
| 1500+ | 6.48 грн |
| SK1045D1 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 135A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 135A
Kind of package: reel; tape
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| SK1045D2R-3G |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 135A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 135A
Kind of package: reel; tape
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| P1000K |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.8kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.8kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 4494 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| 13+ | 33.23 грн |
| 100+ | 24.98 грн |
| 500+ | 20.02 грн |
| 1000+ | 18.17 грн |
| 2500+ | 17.92 грн |
| P1000A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 50V
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 50V
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 1902 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.20 грн |
| 14+ | 30.28 грн |
| 100+ | 22.96 грн |
| 500+ | 18.51 грн |
| 1000+ | 16.99 грн |
| 1500+ | 16.23 грн |
| P1000S |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; Ammo Pack; Ifsm: 400A; P600
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; Ammo Pack; Ifsm: 400A; P600
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 1762 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.34 грн |
| 10+ | 50.72 грн |
| 100+ | 33.31 грн |
| 500+ | 25.82 грн |
| 1000+ | 23.38 грн |
| 1500+ | 22.71 грн |
| P1000J |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.6kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.6kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 4243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.99 грн |
| 100+ | 22.96 грн |
| 500+ | 17.58 грн |
| 1000+ | 17.24 грн |
| P1000B |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.1kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.1kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 2215 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.16 грн |
| 15+ | 28.43 грн |
| 75+ | 22.71 грн |
| 100+ | 22.04 грн |
| 500+ | 18.51 грн |
| 1000+ | 17.24 грн |
| P1000D |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 200V
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 200V
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 1183 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.79 грн |
| 13+ | 32.72 грн |
| 100+ | 23.64 грн |
| 500+ | 18.93 грн |
| 1000+ | 17.33 грн |
| P1000G |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.4kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.05V
Load current: 10A
Max. off-state voltage: 0.4kV
Max. load current: 80A
Max. forward impulse current: 0.4kA
Kind of package: Ammo Pack
на замовлення 1069 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.88 грн |
| 11+ | 40.38 грн |
| 100+ | 25.49 грн |
| 500+ | 19.26 грн |
| 1000+ | 17.33 грн |
| 5KP100CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111÷128V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Manufacturer series: 5KP
Mounting: THT
Case: P600
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Peak pulse power dissipation: 5kW
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111÷128V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Manufacturer series: 5KP
Mounting: THT
Case: P600
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Peak pulse power dissipation: 5kW
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
на замовлення 324 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.32 грн |
| 11+ | 40.88 грн |
| 25+ | 33.48 грн |
| 100+ | 27.93 грн |
| SB140S |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
на замовлення 2133 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.68 грн |
| 68+ | 6.22 грн |
| 100+ | 4.37 грн |
| 250+ | 3.80 грн |
| 500+ | 3.37 грн |
| 1000+ | 2.94 грн |
| 2000+ | 2.50 грн |
| SBX2050 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 20A; P600; Ufmax: 610mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 20A
Semiconductor structure: single diode
Case: P600
Max. forward voltage: 0.61V
Max. forward impulse current: 290A
Kind of package: Ammo Pack
Capacitance: 720pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 20A; P600; Ufmax: 610mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 20A
Semiconductor structure: single diode
Case: P600
Max. forward voltage: 0.61V
Max. forward impulse current: 290A
Kind of package: Ammo Pack
Capacitance: 720pF
на замовлення 4856 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.96 грн |
| 15+ | 29.19 грн |
| 250+ | 25.07 грн |
| 500+ | 24.23 грн |
| SBCT2050 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 10Ax2; TO220AB; Ufmax: 700mV
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Load current: 10A x2
Max. off-state voltage: 50V
Max. forward impulse current: 130A
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 10Ax2; TO220AB; Ufmax: 700mV
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Load current: 10A x2
Max. off-state voltage: 50V
Max. forward impulse current: 130A
Kind of package: tube
Semiconductor structure: common cathode; double
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| 1.5KE68CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 17A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Body dimensions: Ø5.4x7.5mm
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17A; bidirectional; ±5%; Ø5.4x7.5mm; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 17A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Body dimensions: Ø5.4x7.5mm
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.93 грн |
| 27+ | 15.81 грн |
| 30+ | 14.30 грн |
| 100+ | 13.12 грн |
| P6KE68CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
Application: automotive industry
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; bidirectional; ±5%; DO15; Ammo Pack; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
Application: automotive industry
на замовлення 2987 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.46 грн |
| 23+ | 18.93 грн |
| 100+ | 15.81 грн |
| 250+ | 12.62 грн |
| 500+ | 11.27 грн |
| 1000+ | 9.42 грн |
| P4KE68CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 4.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 4.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P4KE68A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 68V; 4.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 68V; 4.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P6KE150A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 150V; unidirectional; ±5%; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 150V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 150V; unidirectional; ±5%; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 150V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
на замовлення 4898 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.80 грн |
| 29+ | 14.72 грн |
| 100+ | 10.18 грн |
| 250+ | 8.83 грн |
| 500+ | 7.91 грн |
| 1000+ | 7.15 грн |
| 4000+ | 5.89 грн |
| BY550-100 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5A; Ammo Pack; Ifsm: 220A; Ufmax: 1V
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 1.5µs
Leakage current: 5µA
Body dimensions: Ø5.4x7.5mm
Max. forward voltage: 1V
Load current: 5A
Max. load current: 44A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 220A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5A; Ammo Pack; Ifsm: 220A; Ufmax: 1V
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 1.5µs
Leakage current: 5µA
Body dimensions: Ø5.4x7.5mm
Max. forward voltage: 1V
Load current: 5A
Max. load current: 44A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 220A
Kind of package: Ammo Pack
на замовлення 1515 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.74 грн |
| 41+ | 10.43 грн |
| 100+ | 7.28 грн |
| 500+ | 5.56 грн |
| 1250+ | 4.82 грн |
| DI072N06PT |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3
Case: QFN3X3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 7mΩ
Power dissipation: 43W
Drain current: 46A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Drain-source voltage: 65V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3
Case: QFN3X3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 7mΩ
Power dissipation: 43W
Drain current: 46A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Drain-source voltage: 65V
на замовлення 129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.58 грн |
| 13+ | 32.64 грн |
| 25+ | 29.44 грн |
| 100+ | 25.91 грн |
| BCV47 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 360mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 360mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 0.8A
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| LL4448 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 22460 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.62 грн |
| 139+ | 3.03 грн |
| 162+ | 2.61 грн |
| 260+ | 1.62 грн |
| 500+ | 1.32 грн |
| 1000+ | 1.09 грн |
| 2500+ | 0.90 грн |
| 5000+ | 0.80 грн |
| 7500+ | 0.75 грн |
| LL4448R13 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 1884 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.28 грн |
| 450+ | 0.97 грн |
| 500+ | 0.87 грн |
| P4SMAJ26A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷32.1V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷32.1V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 6278 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.21 грн |
| 40+ | 10.77 грн |
| 46+ | 9.25 грн |
| 65+ | 6.56 грн |
| 100+ | 5.80 грн |
| 1000+ | 4.32 грн |
| 2000+ | 4.05 грн |
| 2500+ | 3.99 грн |
| P4SMAJ26A-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷32.1V; 9.5A; unidirectional; ±5%; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷32.1V; 9.5A; unidirectional; ±5%; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| MMFTN2316K |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Gate charge: 6.5nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 6.2A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Gate charge: 6.5nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 6.2A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.05 грн |
| 20+ | 21.37 грн |
| 34+ | 12.53 грн |
| 100+ | 7.49 грн |
| 250+ | 6.48 грн |
| 1000+ | 5.80 грн |
| MMFTN123 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2534 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.68 грн |
| 50+ | 8.41 грн |
| 100+ | 6.17 грн |
| 500+ | 4.82 грн |
| 1000+ | 4.31 грн |
| MMFTN2362 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMFTN2362-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMFTN123K-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.2A; Idm: 0.6A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.2A; Idm: 0.6A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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| MMFTN123K |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.9W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 680mA; 0.9W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| 5KP16CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 17.8÷20.5V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 17.8÷20.5V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
на замовлення 973 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.88 грн |
| 12+ | 35.16 грн |
| 25+ | 31.04 грн |
| 100+ | 27.93 грн |
| 500+ | 27.34 грн |
| SMF16CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 17.8÷19.7V; 7.69A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 7.69A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 17.8÷19.7V; 7.69A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 7.69A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
на замовлення 778 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.69 грн |
| 90+ | 4.74 грн |
| 105+ | 4.18 грн |
| 500+ | 3.75 грн |
| P6SMBJ16CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷19.8V; 23.1A; bidirectional; ±5%; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.8V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷19.8V; 23.1A; bidirectional; ±5%; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.8V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 3050 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 5.34 грн |
| 110+ | 4.19 грн |
| 250+ | 3.70 грн |
| 1000+ | 3.32 грн |
| 3000+ | 3.26 грн |
| TGL34-16CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 150W; 16V; 6.4A; bidirectional; ±5%; MiniMELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MiniMELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: TGL34
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 150W; 16V; 6.4A; bidirectional; ±5%; MiniMELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MiniMELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: TGL34
на замовлення 1700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.69 грн |
| 90+ | 4.85 грн |
| 100+ | 4.30 грн |
| 500+ | 3.86 грн |
| 1.5SMCJ16CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.8V; 57.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.8V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.8V; 57.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.8V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
на замовлення 2327 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 21.11 грн |
| 25+ | 17.58 грн |
| 100+ | 15.48 грн |
| 500+ | 13.96 грн |
| 5KP18CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 20÷23.3V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 20÷23.3V; bidirectional; P600; Ammo Pack; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
на замовлення 208 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.32 грн |
| 10+ | 42.06 грн |
| 25+ | 33.98 грн |
| 100+ | 30.03 грн |
| SMF18CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 20÷22.1V; 6.85A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 6.85A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 20÷22.1V; 6.85A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 6.85A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Tolerance: ±5%
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.69 грн |
| 90+ | 4.74 грн |
| 105+ | 4.18 грн |
| 500+ | 3.75 грн |
| 3000+ | 3.68 грн |
| P4KE18CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 16.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: P4KE
Tolerance: ±5%
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 16.5A; bidirectional; ±5%; DO15; Ammo Pack; 400W
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: P4KE
Tolerance: ±5%
на замовлення 3945 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.96 грн |
| 60+ | 7.57 грн |
| 100+ | 6.81 грн |
| 250+ | 5.97 грн |
| 1000+ | 5.38 грн |
| SB150 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO15; Ufmax: 0.7V
Case: DO15
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO15; Ufmax: 0.7V
Case: DO15
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: Ammo Pack
на замовлення 3602 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.34 грн |
| 100+ | 4.21 грн |
| 111+ | 3.82 грн |
| 116+ | 3.63 грн |
| 250+ | 3.42 грн |
| 500+ | 3.24 грн |
| 1000+ | 3.07 грн |
| SB150S |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 0.85V
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 0.85V
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: Ammo Pack
на замовлення 4814 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.44 грн |
| 109+ | 3.87 грн |
| 124+ | 3.40 грн |
| 132+ | 3.20 грн |
| 250+ | 2.94 грн |
| 500+ | 2.75 грн |
| 1000+ | 2.55 грн |























