Продукція > FAIRCHILD SEMICONDUCTOR > Всі товари виробника FAIRCHILD SEMICONDUCTOR (12572) > Сторінка 83 з 210
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
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HGTP7N60A4_NL | Fairchild Semiconductor |
Description: IGBT 600V 34A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 60µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 37 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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FQA9N90 | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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FQD3N60CTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET |
на замовлення 1475 шт: термін постачання 21-31 дні (днів) |
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FQB85N06TM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V |
на замовлення 21566 шт: термін постачання 21-31 дні (днів) |
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HGTP5N120CN | Fairchild Semiconductor |
Description: IGBT, 25A, 1200V, N-CHANNELPower - Max: 167 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Part Status: Active Gate Charge: 75 nC Test Condition: 960V, 5.5A, 25Ohm, 15V Switching Energy: 400µJ (on), 640µJ (off) Td (on/off) @ 25°C: 22ns/180ns IGBT Type: NPT Supplier Device Package: TO-220AB Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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FDD5N50FTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 2552 шт: термін постачання 21-31 дні (днів) |
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CD4081BCMX | Fairchild Semiconductor |
Description: IC GATE AND 4CH 2-INP 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 3V ~ 9V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 115645 шт: термін постачання 21-31 дні (днів) |
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IRF820B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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FDD6692 | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V |
на замовлення 66982 шт: термін постачання 21-31 дні (днів) |
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FQP3N50C | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V |
на замовлення 1362 шт: термін постачання 21-31 дні (днів) |
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1N4730A_NL | Fairchild Semiconductor |
Description: RECTIFIER DIODECurrent - Reverse Leakage @ Vr: 50 µA @ 1 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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FDD6690S | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1N4746A_NL | Fairchild Semiconductor |
Description: RECTIFIER DIODETolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N4738A_NL | Fairchild Semiconductor |
Description: RECTIFIER DIODETolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N4750A_NL | Fairchild Semiconductor |
Description: DIODE ZENER 27V 1W DO41Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IRFM220BTF | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 49152 шт: термін постачання 21-31 дні (днів) |
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IRFI840BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 13732 шт: термін постачання 21-31 дні (днів) |
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IRFI630BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
на замовлення 3453 шт: термін постачання 21-31 дні (днів) |
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FDZ7064S | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 30-WFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 30-BGA (3.5x4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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IRFR214BTFFP001 | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||
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KA7805ATU | Fairchild Semiconductor |
Description: IC REG LINEAR FIXED STNDRD REG Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IRFR210BTF | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
на замовлення 216874 шт: термін постачання 21-31 дні (днів) |
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FST16213MTDX | Fairchild Semiconductor |
Description: BUS EXCHANGER |
на замовлення 3747 шт: термін постачання 21-31 дні (днів) |
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IRFR210BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
на замовлення 17300 шт: термін постачання 21-31 дні (днів) |
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| KA5M0165RYDTU | Fairchild Semiconductor |
Description: IC REG LINEAR SWITCHING REGFeatures: Auto Restart Packaging: Bulk Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8Ohm Input Type: Non-Inverting Voltage - Load: 30V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: TO-220F-4 Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Part Status: Active |
на замовлення 6320 шт: термін постачання 21-31 дні (днів) |
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1N5235BTA | Fairchild Semiconductor |
Description: DIODE ZENER DO35Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 24230 шт: термін постачання 21-31 дні (днів) |
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FST16213MTD | Fairchild Semiconductor |
Description: BUS EXCHANGER |
на замовлення 5814 шт: термін постачання 21-31 дні (днів) |
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1N4747A_NL | Fairchild Semiconductor |
Description: RECTIFIER DIODECurrent - Reverse Leakage @ Vr: 5 µA @ 15.2 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 22 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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KA7809RTM | Fairchild Semiconductor |
Description: IC REG LINEAR 9V 1A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 9V Part Status: Active PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 3921 шт: термін постачання 21-31 дні (днів) |
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1N5249B_NL | Fairchild Semiconductor |
Description: DIODE ZENER 19V 500MW DO35Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 19 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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| KA5L0365RTU | Fairchild Semiconductor |
Description: IC REG LINEAR SWITCHING REGPart Status: Active Voltage - Start Up: 15 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-220F-4 Voltage - Supply (Vcc/Vdd): 9V ~ 30V Topology: Flyback, Forward Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Duty Cycle: 77% Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-220-4 Full Pack, Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
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FST16213MEA | Fairchild Semiconductor |
Description: BUS EXCHANGER |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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1N754A_NL | Fairchild Semiconductor |
Description: DIODE ZENERCurrent - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||
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1N5231B_NL | Fairchild Semiconductor |
Description: DIODE ZENER 5.1V 500MW DO204AHTolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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IRFS240B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 1420 шт: термін постачання 21-31 дні (днів) |
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IRFR220BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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1N914_NL | Fairchild Semiconductor |
Description: DIODE GEN PURP 100V 200MA DO35Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N914B_NL | Fairchild Semiconductor |
Description: DIODE GEN PURP 100V 200MA DO35Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IRFS630A | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
на замовлення 55970 шт: термін постачання 21-31 дні (днів) |
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BC857CMTF | Fairchild Semiconductor |
Description: TRANS PNP 45V 0.1A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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IRFS720B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tj) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 2317 шт: термін постачання 21-31 дні (днів) |
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IRFW720BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET |
на замовлення 1672 шт: термін постачання 21-31 дні (днів) |
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IRFU310BTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 102695 шт: термін постачання 21-31 дні (днів) |
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IRFW840BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 3.13W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 2466 шт: термін постачання 21-31 дні (днів) |
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IRFW630BTM | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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74LS04PC | Fairchild Semiconductor |
Description: IC INVERTER 6CH 1-INP 14DIPPackaging: Bulk Package / Case: 14-DIP Mounting Type: Through Hole Logic Type: Inverter Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Number of Inputs: 1 Supplier Device Package: 14-PDIP Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 6.6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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KSE13007FH2SMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 40W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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KSE13009TU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 12A Power - Max: 100W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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74F189SJ | Fairchild Semiconductor |
Description: IC RAM 64BIT PARALLEL 16SOPDigiKey Programmable: Not Verified Memory Organization: 16 x 4 Access Time: 27 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 29ns Part Status: Active Supplier Device Package: 16-SOP Memory Format: RAM Technology: RAM Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64bit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Bulk |
на замовлення 1025 шт: термін постачання 21-31 дні (днів) |
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HUF75344P3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
на замовлення 312 шт: термін постачання 21-31 дні (днів) |
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IRFW720BTMNL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 11200 шт: термін постачання 21-31 дні (днів) |
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KSE13007FSMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 80W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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74LS139PC | Fairchild Semiconductor |
Description: DECIMAL DECODER, LS SERIESPart Status: Active Supplier Device Package: 16-PDIP Voltage Supply Source: Single Supply Current - Output High, Low: 400µA, 8mA Independent Circuits: 2 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -20°C ~ 75°C Type: Decoder/Demultiplexer Circuit: 2 x 2:4 Mounting Type: Through Hole Package / Case: 16-DIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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KSE13007H2SMTU | Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 8A Power - Max: 80W Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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HUF75339G3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||
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HUF75343S3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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HUF75332P3_NL | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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74F219SJ | Fairchild Semiconductor |
Description: IC RAM 64BIT PARALLEL 16SOPMemory Interface: Parallel Write Cycle Time - Word, Page: 29ns Part Status: Active Supplier Device Package: 16-SOP Memory Format: RAM Technology: RAM Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64bit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 16 x 4 Access Time: 27 ns |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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FM25C160UN | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2.1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 1727 шт: термін постачання 21-31 дні (днів) |
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| FM25C160ULZEM8 | Fairchild Semiconductor |
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 15ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| HGTP7N60A4_NL |
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Виробник: Fairchild Semiconductor
Description: IGBT 600V 34A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Description: IGBT 600V 34A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 182.98 грн |
| FQA9N90 |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FQD3N60CTM |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 962+ | 22.78 грн |
| FQB85N06TM |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
на замовлення 21566 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 211+ | 105.10 грн |
| HGTP5N120CN |
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Виробник: Fairchild Semiconductor
Description: IGBT, 25A, 1200V, N-CHANNEL
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 75 nC
Test Condition: 960V, 5.5A, 25Ohm, 15V
Switching Energy: 400µJ (on), 640µJ (off)
Td (on/off) @ 25°C: 22ns/180ns
IGBT Type: NPT
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: IGBT, 25A, 1200V, N-CHANNEL
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 75 nC
Test Condition: 960V, 5.5A, 25Ohm, 15V
Switching Energy: 400µJ (on), 640µJ (off)
Td (on/off) @ 25°C: 22ns/180ns
IGBT Type: NPT
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FDD5N50FTM |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 2552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 326+ | 61.12 грн |
| CD4081BCMX |
![]() |
Виробник: Fairchild Semiconductor
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3V ~ 9V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3V ~ 9V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 115645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 190+ | 107.08 грн |
| IRF820B |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| FDD6692 |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
на замовлення 66982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 343+ | 58.55 грн |
| FQP3N50C |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 740+ | 29.47 грн |
| 1N4730A_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FDD6690S |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 298+ | 67.20 грн |
| 1N4746A_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: RECTIFIER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Description: RECTIFIER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4738A_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: RECTIFIER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: RECTIFIER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4750A_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4537+ | 4.57 грн |
| IRFM220BTF |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 49152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 649+ | 31.17 грн |
| IRFI840BTU |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 13732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 443+ | 45.04 грн |
| IRFI630BTU |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
на замовлення 3453 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 826+ | 24.40 грн |
| FDZ7064S |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 30-BGA (3.5x4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 30-BGA (3.5x4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 211+ | 100.37 грн |
| IRFR214BTFFP001 |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| KA7805ATU |
Виробник: Fairchild Semiconductor
Description: IC REG LINEAR FIXED STNDRD REG
Packaging: Bulk
Part Status: Active
Description: IC REG LINEAR FIXED STNDRD REG
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IRFR210BTF |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
на замовлення 216874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 790+ | 25.20 грн |
| FST16213MTDX |
![]() |
Виробник: Fairchild Semiconductor
Description: BUS EXCHANGER
Description: BUS EXCHANGER
на замовлення 3747 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 169.62 грн |
| IRFR210BTM |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
на замовлення 17300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 865+ | 23.21 грн |
| KA5M0165RYDTU |
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Виробник: Fairchild Semiconductor
Description: IC REG LINEAR SWITCHING REG
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 30V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220F-4
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC REG LINEAR SWITCHING REG
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 30V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220F-4
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 6320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 190+ | 105.51 грн |
| 1N5235BTA |
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Виробник: Fairchild Semiconductor
Description: DIODE ZENER DO35
Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER DO35
Current - Reverse Leakage @ Vr: 3 µA @ 4.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 24230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5323+ | 4.33 грн |
| FST16213MTD |
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Виробник: Fairchild Semiconductor
Description: BUS EXCHANGER
Description: BUS EXCHANGER
на замовлення 5814 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 113+ | 188.00 грн |
| 1N4747A_NL |
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Виробник: Fairchild Semiconductor
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
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В кошику
од. на суму грн.
| KA7809RTM |
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Виробник: Fairchild Semiconductor
Description: IC REG LINEAR 9V 1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 9V 1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 3921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 757+ | 26.50 грн |
| 1N5249B_NL |
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Виробник: Fairchild Semiconductor
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.22 грн |
| KA5L0365RTU |
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Виробник: Fairchild Semiconductor
Description: IC REG LINEAR SWITCHING REG
Part Status: Active
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-4
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Bulk
Description: IC REG LINEAR SWITCHING REG
Part Status: Active
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-4
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Bulk
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В кошику
од. на суму грн.
| FST16213MEA |
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Виробник: Fairchild Semiconductor
Description: BUS EXCHANGER
Description: BUS EXCHANGER
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 169.62 грн |
| 1N754A_NL |
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Виробник: Fairchild Semiconductor
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1N5231B_NL |
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Виробник: Fairchild Semiconductor
Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.67 грн |
| IRFS240B |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 386+ | 57.08 грн |
| IRFR220BTM |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 260+ | 77.93 грн |
| 1N914_NL |
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Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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од. на суму грн.
| 1N914B_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 100V 200MA DO35
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Description: DIODE GEN PURP 100V 200MA DO35
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IRFS630A |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
на замовлення 55970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 466+ | 43.37 грн |
| BC857CMTF |
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Виробник: Fairchild Semiconductor
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.63 грн |
| IRFS720B |
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Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tj)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tj)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 2317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1665+ | 13.32 грн |
| IRFW720BTM |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 1672 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 20.13 грн |
| IRFU310BTU |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 102695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1514+ | 13.31 грн |
| IRFW840BTM |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 2466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 433+ | 45.34 грн |
| IRFW630BTM |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1600+ | 14.17 грн |
| 74LS04PC |
![]() |
Виробник: Fairchild Semiconductor
Description: IC INVERTER 6CH 1-INP 14DIP
Packaging: Bulk
Package / Case: 14-DIP
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Inputs: 1
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 6.6 mA
Description: IC INVERTER 6CH 1-INP 14DIP
Packaging: Bulk
Package / Case: 14-DIP
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Inputs: 1
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 6.6 mA
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| KSE13007FH2SMTU |
![]() |
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 40W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 40W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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од. на суму грн.
| KSE13009TU |
![]() |
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 12A
Power - Max: 100W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 12A
Power - Max: 100W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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од. на суму грн.
| 74F189SJ |
![]() |
Виробник: Fairchild Semiconductor
Description: IC RAM 64BIT PARALLEL 16SOP
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
Description: IC RAM 64BIT PARALLEL 16SOP
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
на замовлення 1025 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 255.33 грн |
| HUF75344P3_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 173+ | 114.10 грн |
| IRFW720BTMNL |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL POWER MOSFET
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1665+ | 12.84 грн |
| KSE13007FSMTU |
![]() |
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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| 74LS139PC |
![]() |
Виробник: Fairchild Semiconductor
Description: DECIMAL DECODER, LS SERIES
Part Status: Active
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 400µA, 8mA
Independent Circuits: 2
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -20°C ~ 75°C
Type: Decoder/Demultiplexer
Circuit: 2 x 2:4
Mounting Type: Through Hole
Package / Case: 16-DIP
Packaging: Bulk
Description: DECIMAL DECODER, LS SERIES
Part Status: Active
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 400µA, 8mA
Independent Circuits: 2
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -20°C ~ 75°C
Type: Decoder/Demultiplexer
Circuit: 2 x 2:4
Mounting Type: Through Hole
Package / Case: 16-DIP
Packaging: Bulk
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| KSE13007H2SMTU |
![]() |
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR NPN
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Power - Max: 80W
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| HUF75339G3_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| HUF75343S3_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 210+ | 97.89 грн |
| HUF75332P3_NL |
![]() |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| 74F219SJ |
![]() |
Виробник: Fairchild Semiconductor
Description: IC RAM 64BIT PARALLEL 16SOP
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
Description: IC RAM 64BIT PARALLEL 16SOP
Memory Interface: Parallel
Write Cycle Time - Word, Page: 29ns
Part Status: Active
Supplier Device Package: 16-SOP
Memory Format: RAM
Technology: RAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64bit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16 x 4
Access Time: 27 ns
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 158+ | 128.76 грн |
| FM25C160UN |
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Виробник: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 2.1MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2.1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 1727 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 544+ | 40.71 грн |
| FM25C160ULZEM8 |
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Виробник: Fairchild Semiconductor
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 15ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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од. на суму грн.






























