Продукція > FASTSIC > Всі товари виробника FASTSIC (92) > Сторінка 2 з 2

Виробник: fastSiC
Description: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V

Виробник: fastSiC
Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: SICFET N-CH 1200V 45A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V

Виробник: fastSiC
Description: SICFET N-CH 1200V 54A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V

Виробник: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V

Виробник: fastSiC
Description: SICFET N-CH 1200V 31A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V

Виробник: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V

Виробник: fastSiC
Description: SICFET N-CH 1700V 4.5A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV

Виробник: fastSiC
Description: DIODE SIL CARB 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V

Виробник: fastSiC
Description: DIODE SIL CARB 650V 4A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V

Виробник: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: DIODE SIL CARB 650V 20A TO-247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 66pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 4 µA @ 520 V
Qualification: AEC-Q101

Виробник: fastSiC
Description: SICFET N-CH 650V 22A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1129 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 15A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 10.7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 10.7A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 8.8A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 8.8A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V

Виробник: fastSiC
Description: SICFET N-CH 650V 6.1A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 1A, 15V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 3mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 223 pF @ 400 V
Packaging: Tape & Reel (TR)