Продукція > GUANGDONG INMARK ELECTRONICS CO., LTD. > Всі товари виробника GUANGDONG INMARK ELECTRONICS CO., LTD. (27) > Сторінка 1 з 1

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 40V 1A SOD323
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA
Current - Reverse Leakage @ Vr: 1000 µA @ 40 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 16V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 43V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 51V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 98 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 255 mW

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 1500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.5V @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 1500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W

Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W