Продукція > GUANGDONG INMARK ELECTRONICS CO., LTD. > Всі товари виробника GUANGDONG INMARK ELECTRONICS CO., LTD. (81) > Сторінка 1 з 2
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| Фото | Назва | Виробник | Інформація |
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2SA1943 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 230V 15A TO-3PLPackaging: Tube Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3PL Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC5200 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 230V 15A TO-3PLPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3PL Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5819WS | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 40V 1A SOD323Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA Current - Reverse Leakage @ Vr: 1000 µA @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAV21W | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARRAY GP 250V 200MA SOT123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAV21WS | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARRAY GP 250V 200MA SOD323Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C13S | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 13V SOD-323Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 14.2 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C13T1G | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 13V SOD-123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 14.2 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C16 | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 16V SOT-23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: SOT-23 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C43 | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 43V SOT-23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 78 Ohms Supplier Device Package: SOT-23 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C47 | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 47V SOT-23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 88 Ohms Supplier Device Package: SOT-23 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C51 | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ZENER ARRAY 51V SOT-23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 98 Ohms Supplier Device Package: SOT-23 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MBR10100A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 10A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR10100F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 10A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR1045A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 10A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR1045F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 10A TO-22FPackaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR20100A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 20A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR20100F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 20A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR20200A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 20A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR20200F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 20A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR2045A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 20A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR2045F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 20A TO-220FPackaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR30100A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 30A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR30100F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 30A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR30200A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 30A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR30200F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 30A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR40100A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR40100F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR40200A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR40200F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR4060A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR4060F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 40A TO-220FPackaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MJE15032 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MJE15033 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MMBT2907 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 60V 600MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBT3906 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 40V 200MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 300 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBT5551 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 160V 600MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT10N65D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.88 To252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT10N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.67 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT10N80HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 10A 1.4 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT1113T4 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 1.1m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 455W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLT Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT12N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 145W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT12N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT12N65T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.62m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Power Dissipation (Max): 208W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13007MA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13007MF | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220FPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13009DW | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-247SPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): 1mA Frequency - Transition: 4MHz Supplier Device Package: TO-247S Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOT13N50A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 39W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13N50SF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.51 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V Power Dissipation (Max): 48W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT150N03A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 3.9m To-22Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT150N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 1.5m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 83W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT15N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 15A 0.35 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT16N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 16A 0.3 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT16N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 16A 0.47 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT18N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 18A 0.27 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT18N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 18A 0.35 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT20N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 45W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT20N50W | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To247sPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT25N50N | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 25A 0.2 To247Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Power Dissipation (Max): 300W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT25N50W | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 25A 0.21 To247sPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V Power Dissipation (Max): 297W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| 2SA1943 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5200 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
товару немає в наявності
В кошику
од. на суму грн.
| 5819WS |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 40V 1A SOD323
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA
Current - Reverse Leakage @ Vr: 1000 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 1A SOD323
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA
Current - Reverse Leakage @ Vr: 1000 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 58+ | 6.00 грн |
| 100+ | 3.30 грн |
| 167+ | 1.98 грн |
| 500+ | 1.30 грн |
| 1000+ | 1.11 грн |
| 3000+ | 0.94 грн |
| BAV21W |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARRAY GP 250V 200MA SOT123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SOT123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 134+ | 2.57 грн |
| 182+ | 1.82 грн |
| 306+ | 1.08 грн |
| 500+ | 0.71 грн |
| 1000+ | 0.60 грн |
| 3000+ | 0.51 грн |
| BAV21WS |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARRAY GP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 134+ | 2.57 грн |
| 182+ | 1.82 грн |
| 306+ | 1.08 грн |
| 500+ | 0.71 грн |
| 1000+ | 0.60 грн |
| 3000+ | 0.51 грн |
| BZT52C13S |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
Description: DIODE ZENER ARRAY 13V SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 58+ | 6.00 грн |
| 106+ | 3.14 грн |
| 174+ | 1.91 грн |
| 500+ | 1.25 грн |
| 1000+ | 1.06 грн |
| 3000+ | 0.90 грн |
| BZT52C13T1G |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
Description: DIODE ZENER ARRAY 13V SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 58+ | 6.00 грн |
| 106+ | 3.14 грн |
| 174+ | 1.91 грн |
| 500+ | 1.25 грн |
| 1000+ | 1.06 грн |
| 3000+ | 0.90 грн |
| BZX84C16 |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 16V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V
Description: DIODE ZENER ARRAY 16V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.86 грн |
| 84+ | 3.96 грн |
| 139+ | 2.38 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.33 грн |
| 3000+ | 1.13 грн |
| BZX84C43 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 43V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V
Description: DIODE ZENER ARRAY 43V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C47 |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 47V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V
Description: DIODE ZENER ARRAY 47V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.86 грн |
| 84+ | 3.96 грн |
| 139+ | 2.38 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.33 грн |
| 3000+ | 1.13 грн |
| BZX84C51 |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 51V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 98 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V
Description: DIODE ZENER ARRAY 51V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 98 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.86 грн |
| 84+ | 3.96 грн |
| 139+ | 2.38 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.33 грн |
| 3000+ | 1.13 грн |
| MBR10100A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.90 грн |
| 10+ | 45.59 грн |
| 100+ | 27.38 грн |
| 500+ | 17.98 грн |
| 1000+ | 15.29 грн |
| MBR10100F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.61 грн |
| 10+ | 39.64 грн |
| 100+ | 23.77 грн |
| 500+ | 15.62 грн |
| 1000+ | 13.28 грн |
| MBR1045A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.33 грн |
| 10+ | 44.18 грн |
| 100+ | 26.54 грн |
| 500+ | 17.43 грн |
| 1000+ | 14.81 грн |
| MBR1045F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 10A TO-22F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO-22F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.62 грн |
| 10+ | 43.03 грн |
| 100+ | 25.82 грн |
| 500+ | 16.96 грн |
| 1000+ | 14.41 грн |
| MBR20100A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.20 грн |
| 10+ | 51.62 грн |
| 100+ | 30.98 грн |
| 500+ | 20.35 грн |
| 1000+ | 17.30 грн |
| MBR20100F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.62 грн |
| 10+ | 43.19 грн |
| 100+ | 25.94 грн |
| 500+ | 17.04 грн |
| 1000+ | 14.48 грн |
| MBR20200A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20200F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2045A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2045F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30100A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30100F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30200A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.07 грн |
| 10+ | 66.07 грн |
| 100+ | 39.63 грн |
| 500+ | 26.03 грн |
| 1000+ | 22.13 грн |
| MBR30200F |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 58.80 грн |
| 100+ | 35.30 грн |
| 500+ | 23.19 грн |
| 1000+ | 19.71 грн |
| MBR40100A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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| MBR40100F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR40200A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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| MBR40200F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
В кошику
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| MBR4060A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.80 грн |
| 10+ | 84.07 грн |
| 100+ | 50.43 грн |
| 500+ | 33.13 грн |
| 1000+ | 28.16 грн |
| MBR4060F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.51 грн |
| 10+ | 78.05 грн |
| 100+ | 46.83 грн |
| 500+ | 30.76 грн |
| 1000+ | 26.15 грн |
| MJE15032 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.22 грн |
| 10+ | 78.87 грн |
| 100+ | 47.33 грн |
| 500+ | 31.09 грн |
| 1000+ | 26.43 грн |
| MJE15033 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.22 грн |
| 10+ | 78.87 грн |
| 100+ | 47.33 грн |
| 500+ | 31.09 грн |
| 1000+ | 26.43 грн |
| MMBT2907 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 134+ | 2.57 грн |
| 182+ | 1.82 грн |
| 308+ | 1.07 грн |
| 500+ | 0.71 грн |
| 1000+ | 0.60 грн |
| 3000+ | 0.51 грн |
| MMBT5551 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.
| MOT10N65D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.23 грн |
| 10+ | 89.69 грн |
| 100+ | 53.77 грн |
| 500+ | 35.33 грн |
| 1000+ | 30.03 грн |
| 2500+ | 25.53 грн |
| MOT10N65F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.53 грн |
| 10+ | 95.55 грн |
| 100+ | 57.37 грн |
| 500+ | 37.68 грн |
| 1000+ | 32.03 грн |
| MOT10N80HF |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| MOT1113T4 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 706.70 грн |
| 10+ | 408.32 грн |
| 100+ | 244.95 грн |
| 500+ | 160.91 грн |
| 1000+ | 136.78 грн |
| 2000+ | 116.26 грн |
| MOT12N65A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| MOT12N65F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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| MOT12N65T |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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| MOT13007MA |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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| MOT13007MF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
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| MOT13009DW |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.81 грн |
| 10+ | 98.03 грн |
| 100+ | 58.79 грн |
| 500+ | 38.63 грн |
| 1000+ | 32.83 грн |
| 3000+ | 27.91 грн |
| MOT13N50A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.98 грн |
| 10+ | 125.45 грн |
| 100+ | 75.29 грн |
| 500+ | 49.46 грн |
| 1000+ | 42.04 грн |
| MOT13N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.98 грн |
| 10+ | 125.45 грн |
| 100+ | 75.29 грн |
| 500+ | 49.46 грн |
| 1000+ | 42.04 грн |
| MOT13N50SF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.66 грн |
| 10+ | 88.45 грн |
| 100+ | 53.05 грн |
| 500+ | 34.86 грн |
| 1000+ | 29.63 грн |
| MOT150N03A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| MOT150N03D |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MOT15N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.13 грн |
| 10+ | 132.14 грн |
| 100+ | 79.24 грн |
| 500+ | 52.06 грн |
| 1000+ | 44.25 грн |
| MOT16N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.00 грн |
| 10+ | 139.33 грн |
| 100+ | 83.57 грн |
| 500+ | 54.90 грн |
| 1000+ | 46.66 грн |
| MOT16N65HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| MOT18N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.43 грн |
| 10+ | 144.61 грн |
| 100+ | 86.77 грн |
| 500+ | 57.00 грн |
| 1000+ | 48.45 грн |
| MOT18N65HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.87 грн |
| 10+ | 157.33 грн |
| 100+ | 94.37 грн |
| 500+ | 62.00 грн |
| 1000+ | 52.70 грн |
| MOT20N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.02 грн |
| 10+ | 163.77 грн |
| 100+ | 98.23 грн |
| 500+ | 64.53 грн |
| 1000+ | 54.85 грн |
| MOT20N50W |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 413.39 грн |
| 10+ | 239.01 грн |
| 100+ | 143.41 грн |
| 600+ | 94.21 грн |
| MOT25N50N |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 682.69 грн |
| 10+ | 394.36 грн |
| 100+ | 236.62 грн |
| 600+ | 155.44 грн |
| MOT25N50W |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 578.91 грн |
| 10+ | 334.65 грн |
| 100+ | 200.77 грн |
| 600+ | 131.89 грн |
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